JPS6128634B2 - - Google Patents
Info
- Publication number
- JPS6128634B2 JPS6128634B2 JP7923682A JP7923682A JPS6128634B2 JP S6128634 B2 JPS6128634 B2 JP S6128634B2 JP 7923682 A JP7923682 A JP 7923682A JP 7923682 A JP7923682 A JP 7923682A JP S6128634 B2 JPS6128634 B2 JP S6128634B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- liquid
- diameter
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 60
- 238000010438 heat treatment Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 24
- 239000000565 sealant Substances 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 27
- 238000000034 method Methods 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7923682A JPS58199796A (ja) | 1982-05-13 | 1982-05-13 | 液体封止結晶引上げ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7923682A JPS58199796A (ja) | 1982-05-13 | 1982-05-13 | 液体封止結晶引上げ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58199796A JPS58199796A (ja) | 1983-11-21 |
| JPS6128634B2 true JPS6128634B2 (zh) | 1986-07-01 |
Family
ID=13684225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7923682A Granted JPS58199796A (ja) | 1982-05-13 | 1982-05-13 | 液体封止結晶引上げ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58199796A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116195A (ja) * | 1982-12-23 | 1984-07-04 | Toshiba Corp | 化合物半導体単結晶の製造方法 |
-
1982
- 1982-05-13 JP JP7923682A patent/JPS58199796A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58199796A (ja) | 1983-11-21 |
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