JPS61284571A - 放電電極 - Google Patents
放電電極Info
- Publication number
- JPS61284571A JPS61284571A JP12748585A JP12748585A JPS61284571A JP S61284571 A JPS61284571 A JP S61284571A JP 12748585 A JP12748585 A JP 12748585A JP 12748585 A JP12748585 A JP 12748585A JP S61284571 A JPS61284571 A JP S61284571A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- electrode
- target
- ring
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 abstract description 4
- 239000000696 magnetic material Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61284571A true JPS61284571A (ja) | 1986-12-15 |
| JPH0241583B2 JPH0241583B2 (cg-RX-API-DMAC7.html) | 1990-09-18 |
Family
ID=14961105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12748585A Granted JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61284571A (cg-RX-API-DMAC7.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02254162A (ja) * | 1989-03-27 | 1990-10-12 | Tokyo Electron Ltd | スパッタ装置 |
| JPH07176398A (ja) * | 1994-10-24 | 1995-07-14 | Tokyo Electron Ltd | プラズマ処理装置 |
| WO2000026430A1 (en) * | 1998-10-30 | 2000-05-11 | Applied Materials Inc. | Sputtering apparatus |
| CN107523831A (zh) * | 2017-09-30 | 2017-12-29 | 江阴康强电子有限公司 | 粗化浸镀子槽 |
-
1985
- 1985-06-12 JP JP12748585A patent/JPS61284571A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02254162A (ja) * | 1989-03-27 | 1990-10-12 | Tokyo Electron Ltd | スパッタ装置 |
| JPH07176398A (ja) * | 1994-10-24 | 1995-07-14 | Tokyo Electron Ltd | プラズマ処理装置 |
| WO2000026430A1 (en) * | 1998-10-30 | 2000-05-11 | Applied Materials Inc. | Sputtering apparatus |
| US6506290B1 (en) | 1998-10-30 | 2003-01-14 | Applied Materials, Inc. | Sputtering apparatus with magnetron device |
| CN107523831A (zh) * | 2017-09-30 | 2017-12-29 | 江阴康强电子有限公司 | 粗化浸镀子槽 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0241583B2 (cg-RX-API-DMAC7.html) | 1990-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2537210B2 (ja) | 高密度プラズマの発生装置 | |
| KR100646266B1 (ko) | 스퍼터링 증착용 플라스마 처리 장치 | |
| US4721553A (en) | Method and apparatus for microwave assisting sputtering | |
| JP4676074B2 (ja) | フォーカスリング及びプラズマ処理装置 | |
| US6153067A (en) | Method for combined treatment of an object with an ion beam and a magnetron plasma with a combined magnetron-plasma and ion-beam source | |
| EP1166323B1 (en) | Method and apparatus for compensating non-uniform wafer processing in plasma processing | |
| KR890004172B1 (ko) | 진공 스퍼터링장치 | |
| US5290993A (en) | Microwave plasma processing device | |
| JPH0686658B2 (ja) | 別個の放電にさらされるターゲットへの別個の閉込め磁界を有するマグネトロンスパッタリング装置を制御する装置および方法 | |
| US5330632A (en) | Apparatus for cathode sputtering | |
| JPH036221B2 (cg-RX-API-DMAC7.html) | ||
| JPS61284571A (ja) | 放電電極 | |
| TW202101601A (zh) | 反應腔室及半導體加工設備 | |
| JPS61284573A (ja) | 放電電極 | |
| US12165829B2 (en) | Single beam plasma source | |
| JPH0216381B2 (cg-RX-API-DMAC7.html) | ||
| US12444581B2 (en) | Plasma processing apparatus | |
| JPH07201831A (ja) | 表面処理装置 | |
| JPS62250174A (ja) | 放電電極 | |
| JP3000417U (ja) | 陰極スパッタリング装置 | |
| JPH02159375A (ja) | イオンビームスパッタリング装置 | |
| JPH0774441B2 (ja) | イオンビ−ムスパツタ装置 | |
| JP3402166B2 (ja) | イオンビーム処理装置 | |
| JP2001220671A (ja) | スパッタ成膜応用のためのプラズマ処理装置 | |
| JPH02195631A (ja) | プラズマ発生装置 |