JPS61281100A - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法Info
- Publication number
- JPS61281100A JPS61281100A JP12172785A JP12172785A JPS61281100A JP S61281100 A JPS61281100 A JP S61281100A JP 12172785 A JP12172785 A JP 12172785A JP 12172785 A JP12172785 A JP 12172785A JP S61281100 A JPS61281100 A JP S61281100A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon
- single crystal
- raw material
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000002994 raw material Substances 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 230000001012 protector Effects 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12172785A JPS61281100A (ja) | 1985-06-05 | 1985-06-05 | シリコン単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12172785A JPS61281100A (ja) | 1985-06-05 | 1985-06-05 | シリコン単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61281100A true JPS61281100A (ja) | 1986-12-11 |
| JPH0566351B2 JPH0566351B2 (enrdf_load_stackoverflow) | 1993-09-21 |
Family
ID=14818382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12172785A Granted JPS61281100A (ja) | 1985-06-05 | 1985-06-05 | シリコン単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61281100A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5069741A (en) * | 1987-03-20 | 1991-12-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Method of manufacturing quartz double crucible assembly |
| KR101209118B1 (ko) | 2010-04-20 | 2012-12-06 | 주식회사 윈젠 | 폴리실리콘 제조용 전극, 폴리실리콘 제조용 전극의 용접 장치 및 그 용접 방법 |
| JP2019199374A (ja) * | 2018-05-16 | 2019-11-21 | 住友金属鉱山株式会社 | 粉末状原料の充填方法 |
-
1985
- 1985-06-05 JP JP12172785A patent/JPS61281100A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5069741A (en) * | 1987-03-20 | 1991-12-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Method of manufacturing quartz double crucible assembly |
| KR101209118B1 (ko) | 2010-04-20 | 2012-12-06 | 주식회사 윈젠 | 폴리실리콘 제조용 전극, 폴리실리콘 제조용 전극의 용접 장치 및 그 용접 방법 |
| JP2019199374A (ja) * | 2018-05-16 | 2019-11-21 | 住友金属鉱山株式会社 | 粉末状原料の充填方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566351B2 (enrdf_load_stackoverflow) | 1993-09-21 |
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