JPS6127840B2 - - Google Patents

Info

Publication number
JPS6127840B2
JPS6127840B2 JP49136685A JP13668574A JPS6127840B2 JP S6127840 B2 JPS6127840 B2 JP S6127840B2 JP 49136685 A JP49136685 A JP 49136685A JP 13668574 A JP13668574 A JP 13668574A JP S6127840 B2 JPS6127840 B2 JP S6127840B2
Authority
JP
Japan
Prior art keywords
base
transistor
memory cell
transistors
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49136685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5161743A (enrdf_load_stackoverflow
Inventor
Akisuke Mori
Kuniaki Makabe
Toshitaka Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP49136685A priority Critical patent/JPS6127840B2/ja
Publication of JPS5161743A publication Critical patent/JPS5161743A/ja
Publication of JPS6127840B2 publication Critical patent/JPS6127840B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP49136685A 1974-11-27 1974-11-27 Expired JPS6127840B2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49136685A JPS6127840B2 (enrdf_load_stackoverflow) 1974-11-27 1974-11-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49136685A JPS6127840B2 (enrdf_load_stackoverflow) 1974-11-27 1974-11-27

Publications (2)

Publication Number Publication Date
JPS5161743A JPS5161743A (enrdf_load_stackoverflow) 1976-05-28
JPS6127840B2 true JPS6127840B2 (enrdf_load_stackoverflow) 1986-06-27

Family

ID=15181068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49136685A Expired JPS6127840B2 (enrdf_load_stackoverflow) 1974-11-27 1974-11-27

Country Status (1)

Country Link
JP (1) JPS6127840B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
JPS5552255A (en) * 1978-10-11 1980-04-16 Nec Corp Semiconductor memory

Also Published As

Publication number Publication date
JPS5161743A (enrdf_load_stackoverflow) 1976-05-28

Similar Documents

Publication Publication Date Title
JP2008504736A (ja) Ｃｍｏｓメモリセル内のラッチアップを防ぐための回路
JPS6156627B2 (enrdf_load_stackoverflow)
JPH0156479B2 (enrdf_load_stackoverflow)
US4021687A (en) Transistor circuit for deep saturation prevention
US5708610A (en) Semiconductor memory device and semiconductor device
EP0028157B1 (en) Semiconductor integrated circuit memory device with integrated injection logic
JPS60167368A (ja) 集積バイポ−ラ・パワ−トランジスタ装置
JPS6127840B2 (enrdf_load_stackoverflow)
JP4460272B2 (ja) パワートランジスタおよびそれを用いた半導体集積回路
US4550390A (en) Semiconductor memory device
GB1264260A (en) Improvements in monolithic integrated circuit memories
US4595942A (en) Integrated circuit
JP2680848B2 (ja) 半導体記憶装置
JPS61125073A (ja) 半導体集積回路装置
JPS586168A (ja) 半導体集積回路
JPS60138963A (ja) 半導体装置
JPS6025907B2 (ja) 半導体記憶装置
Panousis A trim memory employing both npn and high-gain unijunction transistors
JPH03194966A (ja) 半導体記憶装置
JPS59110165A (ja) 半導体装置
JPH0685199A (ja) メモリセル
JPH0320076A (ja) 半導体装置の製造方法
JPS5824023B2 (ja) 半導体装置
JPH02205068A (ja) 半導体装置の製造方法
JPS63226958A (ja) 半導体記憶装置