JPS61276321A - Semiconductor substrate developing device - Google Patents
Semiconductor substrate developing deviceInfo
- Publication number
- JPS61276321A JPS61276321A JP11829385A JP11829385A JPS61276321A JP S61276321 A JPS61276321 A JP S61276321A JP 11829385 A JP11829385 A JP 11829385A JP 11829385 A JP11829385 A JP 11829385A JP S61276321 A JPS61276321 A JP S61276321A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- substrate
- developer
- space
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板上に現像液を滴下し、静止状態で現
像処理を行う方式の現像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a developing device that drops a developing solution onto a semiconductor substrate and performs a developing process in a stationary state.
従来、この種の現像処理装置は第3図のように、保持台
1上の半導体基板2の表面に現像液7が完全に広がるま
で滴下し、その液を液の表面張力のみで半導体基板上に
保持する方法をとっていた。Conventionally, this type of development processing apparatus, as shown in FIG. 3, drops a developer solution 7 onto the surface of a semiconductor substrate 2 on a holding table 1 until it is completely spread, and then uses only the surface tension of the solution to transfer the solution onto the semiconductor substrate. I used a method to hold it in place.
また、現像液の広がシを良好にするために現像液に界面
活性剤を添加する例もある。There are also examples in which a surfactant is added to the developer to improve the spread of the developer.
上述した従来の現像装置は現像液を半導体基板上に滴下
し、液の表面張力のみで保持する方法をとっているため
に以下のような欠点が生じていた(1) 滴下量が少
ない場合、第4図で示すように現像液7が充分に広がら
ずに、現像処理できない部分10が生ずる。The conventional developing device described above uses a method in which the developing solution is dropped onto the semiconductor substrate and held only by the surface tension of the solution, resulting in the following drawbacks: (1) When the amount of dropping is small, As shown in FIG. 4, the developer 7 does not spread sufficiently, resulting in areas 10 that cannot be developed.
(2)表面をおおうに充分な量を滴下するには大抵の場
合、過量が滴下することになるため、現像液7が半導体
基板表面からこぼれおちて、基板2の裏面及び半導体基
板保持台1を汚染し、それを除去するために水洗処理等
の余分な工程を追加しなければならなかった。(2) In most cases, an excessive amount is dropped to cover the surface, so the developer 7 spills from the surface of the semiconductor substrate and spills onto the back surface of the substrate 2 and onto the semiconductor substrate holder 1. contaminated, and extra steps such as washing with water had to be added to remove it.
(3) また現像液7が半導体基板上に容易に広がる
ようにして前記(1)の欠点をなくすために、現像液内
に界面活性剤を添加する方法があるが、この場合は表面
に対する濡れ性と共に裏面に対する濡れ性も良くなるた
めに、基板2の裏面への汚染を助長することになるので
、その使用には問題がある。(3) Furthermore, in order to easily spread the developer solution 7 on the semiconductor substrate and eliminate the drawback mentioned in (1) above, there is a method of adding a surfactant to the developer solution, but in this case, it is necessary to add a surfactant to the surface. Since the wettability to the back surface is improved as well as the wettability to the back surface, it promotes contamination of the back surface of the substrate 2, so there is a problem in its use.
本発明の現像装置は保持台に吸着された半導体基板に対
向して、平行な対向平板を設置し、該対向平板と半導体
基板との間隙に現像液の保持空間を形成したことを特徴
とするものである。The developing device of the present invention is characterized in that a parallel opposing flat plate is installed opposite the semiconductor substrate attracted to the holding table, and a developing solution holding space is formed in the gap between the opposing flat plate and the semiconductor substrate. It is something.
次に本発萌の一実施例について図面を参照して説明する
。Next, an embodiment of the present invention will be described with reference to the drawings.
第1図(a)は本発明の一実施例を示した図である。FIG. 1(a) is a diagram showing an embodiment of the present invention.
図において、°1は半導体基板保持台、2は半導体基板
、3はその表面が親水性物質で形成された半導体基板と
同程度かやや小さくした大きさの円板であシ、この円板
3は現像処理カップ5から支持棒6によって基板2と平
行に吊シ下げられている。In the figure, 1 is a semiconductor substrate holding stand, 2 is a semiconductor substrate, and 3 is a disk whose surface is made of a hydrophilic substance and whose size is the same as or slightly smaller than the semiconductor substrate. is suspended from the developing cup 5 by a support rod 6 in parallel to the substrate 2.
4は現像液の滴下ノズルである。4 is a developer dripping nozzle.
本実施例は現像液滴下ノズル4から半導体基板2と円板
3との間の空隙容積と同量の現像液7をその間隙に流し
込み、第1図(b)のように現像液7を半導体基板2と
円板3との間に均一に拡散し、かつ安定に保持するもの
である。In this embodiment, a developer 7 in an amount equal to the volume of the gap between the semiconductor substrate 2 and the disk 3 is poured into the gap from the developer dripping nozzle 4, and the developer 7 is applied to the semiconductor substrate as shown in FIG. 1(b). It diffuses uniformly between the substrate 2 and the disk 3 and holds it stably.
上部対向円板の構造は第1図の他に第2図に示す様に円
板3の中心部分に現像液滴下用の開孔部 =8を設けて
、そこから現像液を滴下するようにしてもよい。The structure of the upper opposing disc is as shown in Fig. 2 in addition to Fig. 1, in which an opening 8 for dripping the developer is provided in the center of the disc 3, and the developer is dripped from there. It's okay.
以上説明したように本発明は半導体基板と表面が親水性
物質で形成された円板との間に現像液を安定に保持する
ようにしたので、現像液の滴下量が少量かつ定量ですみ
、滴下時間も短縮することかで・きる。また、基板の裏
面へのまわシ込みをなくすことができ、その後の水洗処
理等を省略することができる。さらに現像液に界面活性
剤等を添加する必要がなくなシ、基板の裏面の濡れ性を
助長することがなく、裏面の汚染を防止できる効果を有
するものである。As explained above, in the present invention, since the developer is stably held between the semiconductor substrate and the disk whose surface is made of a hydrophilic substance, the amount of the developer dropped can be small and fixed. This can also be done by shortening the dripping time. Further, it is possible to eliminate the possibility of turning the back surface of the substrate, and to omit the subsequent water washing treatment and the like. Furthermore, there is no need to add a surfactant or the like to the developing solution, and the wettability of the back surface of the substrate is not promoted, which has the effect of preventing contamination of the back surface.
第1図は本発明の一実施例の縦断面図であって、第1図
(a)は現像液滴下前、(b)は現像液滴下後の図、第
2図は半導体基板に対向する円板の他の実施例を示すも
ので、第2E(a)は正面図、(b)は同平面図、第3
図は従来の現像装置による現像処理を示す図、第4図は
従来の方法において発生する不良の例を示す図である。
1・・・半導体基板保持台、2・・・半導体基板、3・
・・対向円板、4・・・滴下ノズル、5・・・現像処理
カップ、6・・・支持棒、7・・・現像液。
第1図
晃2図
第4図FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, in which FIG. 1(a) is before the developer is dropped, FIG. 1(b) is after the developer is dropped, and FIG. 2 is a view facing the semiconductor substrate. This shows another example of the disk, in which 2nd E (a) is a front view, (b) is the same plan view, and 3rd E is a front view.
The figure shows a developing process using a conventional developing device, and FIG. 4 shows an example of defects that occur in the conventional method. 1... Semiconductor substrate holding stand, 2... Semiconductor substrate, 3...
. . . Opposed disk, 4. Dripping nozzle, 5. Development processing cup, 6. Support rod, 7. Developing solution. Figure 1 Figure 2 Figure 4
Claims (1)
して平行な対向板を設置し、半導体基板と対向板との間
の間隙に現像液の保持空間を形成したことを特徴とする
半導体基板現像装置。(1) A semiconductor characterized in that a parallel opposing plate is installed facing the semiconductor substrate attracted to the semiconductor substrate holding part, and a developer holding space is formed in the gap between the semiconductor substrate and the opposing plate. Substrate development equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11829385A JPS61276321A (en) | 1985-05-31 | 1985-05-31 | Semiconductor substrate developing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11829385A JPS61276321A (en) | 1985-05-31 | 1985-05-31 | Semiconductor substrate developing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61276321A true JPS61276321A (en) | 1986-12-06 |
Family
ID=14733089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11829385A Pending JPS61276321A (en) | 1985-05-31 | 1985-05-31 | Semiconductor substrate developing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61276321A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63269533A (en) * | 1987-04-27 | 1988-11-07 | Nec Corp | Developing device of semiconductor substrate |
WO2005112077A1 (en) * | 2004-05-18 | 2005-11-24 | Tokyo Electron Limited | Development apparatus and development method |
-
1985
- 1985-05-31 JP JP11829385A patent/JPS61276321A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63269533A (en) * | 1987-04-27 | 1988-11-07 | Nec Corp | Developing device of semiconductor substrate |
WO2005112077A1 (en) * | 2004-05-18 | 2005-11-24 | Tokyo Electron Limited | Development apparatus and development method |
US7651284B2 (en) | 2004-05-18 | 2010-01-26 | Tokyo Electron Limited | Development apparatus and development method |
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