JPS61275747A - ネガレジスト材料 - Google Patents
ネガレジスト材料Info
- Publication number
- JPS61275747A JPS61275747A JP60117145A JP11714585A JPS61275747A JP S61275747 A JPS61275747 A JP S61275747A JP 60117145 A JP60117145 A JP 60117145A JP 11714585 A JP11714585 A JP 11714585A JP S61275747 A JPS61275747 A JP S61275747A
- Authority
- JP
- Japan
- Prior art keywords
- resist material
- resist
- resolution
- negative type
- during development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 9
- 150000002367 halogens Chemical class 0.000 abstract description 9
- 238000004132 cross linking Methods 0.000 abstract description 7
- 230000005865 ionizing radiation Effects 0.000 abstract description 7
- 230000008961 swelling Effects 0.000 abstract description 5
- BVJSGOYEEDZAGW-UHFFFAOYSA-N [chloro(nitro)methyl]benzene Chemical compound [O-][N+](=O)C(Cl)C1=CC=CC=C1 BVJSGOYEEDZAGW-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 150000003384 small molecules Chemical class 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 hydrogen halides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WQONPSCCEXUXTQ-UHFFFAOYSA-N 1,2-dibromobenzene Chemical compound BrC1=CC=CC=C1Br WQONPSCCEXUXTQ-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- IBRQUKZZBXZOBA-UHFFFAOYSA-N 1-chloro-3-(3-chlorophenyl)sulfonylbenzene Chemical compound ClC1=CC=CC(S(=O)(=O)C=2C=C(Cl)C=CC=2)=C1 IBRQUKZZBXZOBA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- FUMLKAFCVQJVEZ-UHFFFAOYSA-N [bromo(nitro)methyl]benzene Chemical compound [O-][N+](=O)C(Br)C1=CC=CC=C1 FUMLKAFCVQJVEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
- G03F7/0295—Photolytic halogen compounds
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60117145A JPS61275747A (ja) | 1985-05-30 | 1985-05-30 | ネガレジスト材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60117145A JPS61275747A (ja) | 1985-05-30 | 1985-05-30 | ネガレジスト材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61275747A true JPS61275747A (ja) | 1986-12-05 |
| JPH0584513B2 JPH0584513B2 (enrdf_load_stackoverflow) | 1993-12-02 |
Family
ID=14704573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60117145A Granted JPS61275747A (ja) | 1985-05-30 | 1985-05-30 | ネガレジスト材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61275747A (enrdf_load_stackoverflow) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106901A (en) * | 1976-03-02 | 1977-09-08 | Oji Paper Co | Photoosensitive resin composition |
| JPS53133428A (en) * | 1977-04-25 | 1978-11-21 | Hoechst Ag | Radiation sensitive copying constitute |
| JPS5423574A (en) * | 1977-07-22 | 1979-02-22 | Seiko Epson Corp | Electronic watch |
| JPS54153622A (en) * | 1978-05-24 | 1979-12-04 | Fuji Photo Film Co Ltd | Photosensitive composition and image formation method using this |
| JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
-
1985
- 1985-05-30 JP JP60117145A patent/JPS61275747A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106901A (en) * | 1976-03-02 | 1977-09-08 | Oji Paper Co | Photoosensitive resin composition |
| JPS53133428A (en) * | 1977-04-25 | 1978-11-21 | Hoechst Ag | Radiation sensitive copying constitute |
| JPS5423574A (en) * | 1977-07-22 | 1979-02-22 | Seiko Epson Corp | Electronic watch |
| JPS54153622A (en) * | 1978-05-24 | 1979-12-04 | Fuji Photo Film Co Ltd | Photosensitive composition and image formation method using this |
| JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0584513B2 (enrdf_load_stackoverflow) | 1993-12-02 |
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