JPS61274335A - Method for testing wafer - Google Patents

Method for testing wafer

Info

Publication number
JPS61274335A
JPS61274335A JP60116993A JP11699385A JPS61274335A JP S61274335 A JPS61274335 A JP S61274335A JP 60116993 A JP60116993 A JP 60116993A JP 11699385 A JP11699385 A JP 11699385A JP S61274335 A JPS61274335 A JP S61274335A
Authority
JP
Japan
Prior art keywords
chip
testing
test
wafer
tdp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60116993A
Other languages
Japanese (ja)
Inventor
Noriyoshi Ishitsuki
石突 知徳
Shinji Sumiya
住谷 慎二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60116993A priority Critical patent/JPS61274335A/en
Publication of JPS61274335A publication Critical patent/JPS61274335A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To shorten the testing time by effecting the automatic measurement at efficient testing speed in the testing mode for the non-defective decision of devices by measuring and memorizing the variability of the factors of a device parameter of a digital LSI for each chip previously. CONSTITUTION:The propagation delay time tdp and the time for measurement of gain beta is extremely short and the propagation delay time tdp and gain betafor each chip 2 arranged on a wafer are previously measured and stored in a memory 5 provided with sufficient capacity. In the non-defective decision test for each chip 2, a difference between the contents previously stored in the memory 5 (values of tdp and beta) and the bus data sent from a control circuit 4 are calculated for each set chip by a calculation circuit 6 and the velocity of an oscillator 7 suitable for the delay time tdp and gain beta of each chip is determined. The modulated oscillation output of the oscillator 7 is given to the control circuit 4, which makes the testing speed of the chip to be measured variable for modulation and a digital LSI is measured automatically by preset ting the optimum condition in the testing mode.

Description

【発明の詳細な説明】 く技術分野〉 この発明はウェハの自動テスト方法に関し、特には、デ
ジタルLSIのためのウェハのテストスループットを効
率的に実行して、各チップの良品、不良品を速やかに見
極めるテスト方法に関す、る。
[Detailed Description of the Invention] [Technical Field] This invention relates to an automatic wafer testing method, and in particular, to efficiently execute wafer test throughput for digital LSI and quickly identify good and defective chips for each chip. Regarding the test method to determine the

〈発明の概要〉 この発明は、ウェハテストの効率化を図るために、テス
トモードを実使用状態よりも速い速度でテストする場合
に、テストモードでの周波数マージンがチップ毎やウェ
ハ毎に異なることに対応して、チップ毎にプログラマブ
ルにテスト条件を予め設定し、実際のテストモードに自
いてはプログラムされたテスト条件を読み出して自動的
に最適テスト速度を設定してテストし、良品、不良品を
判別する。
<Summary of the Invention> In order to improve the efficiency of wafer testing, the present invention provides a method for improving the efficiency of wafer testing, in which the frequency margin in the test mode is different for each chip and each wafer when the test mode is tested at a faster speed than the actual usage state. In response to this, test conditions can be preset programmably for each chip, and in the actual test mode, the programmed test conditions are read out and the optimum test speed is automatically set and tested to determine whether the product is good or defective. Determine.

〈従来の技術〉 従来から、一応の製造工程を終えた半導体チップはウェ
ハ状態で良品、不良品の検査が自動測定される。このと
きの測定は通常は一律に同一テスト条件にて行われてい
る。
<Prior Art> Conventionally, semiconductor chips that have undergone a certain manufacturing process are automatically inspected to determine whether they are good or defective in the wafer state. Measurements at this time are usually performed under uniform test conditions.

〈発明が解決しようとする問題点〉 上記従来のウェハテスト方法によれば、測定対象LSI
は半導体基板自体の特性やプロセス条件によって、デバ
イスパラメータ例えばしきい値電圧vthやゲイン或い
はコンタクト抵抗などの因子のバラツキのために異なっ
たテスト結果が導き出される。即ちチップそれ自体は良
品チップであっても、各チップにバラツキがあるため、
同一テストモードで実行した場合には、あたかも不良チ
ップであるとして処理される事態が生じ、テストの信頼
性を著しく損う結果になっていた。特にテストの効率化
を図るために、実際に使用するユーザモードとは異なる
スピードの速いテストモードにてウェハテストを実行す
るデジタルLSIに上述のような問題が発生し易い。
<Problems to be Solved by the Invention> According to the above conventional wafer testing method, the LSI to be measured
Different test results are obtained due to variations in factors such as device parameters such as threshold voltage vth, gain, and contact resistance, depending on the characteristics of the semiconductor substrate itself and process conditions. In other words, even if the chip itself is a good chip, there are variations in each chip, so
When executed in the same test mode, a situation arises in which the chip is treated as if it were a defective chip, resulting in a significant loss of test reliability. In particular, the above-mentioned problems are likely to occur in digital LSIs in which a wafer test is performed in a faster test mode different from the user mode actually used in order to improve test efficiency.

く問題点を解決するための手段〉 上記従来方式の問題点を解決するため、製造工程を終え
たデジタルLSIのウェハテストにおいて、デバイスが
パラメータとしてもつファクタのうち特に周波数マージ
ンに深く関係するファクタについて、予め各チップ毎に
ピックアップして記憶装置にプログラムし、テストモー
ドではこのプログラム内容を読み出して最適テスト条件
を設定し、ウェハテストを自動的に行なう。
In order to solve the above-mentioned problems with the conventional method, in wafer testing of digital LSIs that have completed the manufacturing process, among the factors that the device has as parameters, especially those closely related to the frequency margin, Each chip is picked up in advance and programmed into a storage device, and in the test mode, the contents of this program are read out to set optimum test conditions and automatically perform a wafer test.

く作 用〉 一般に行なわれている半導体装置の製造工程の如く、同
一ウェハ内に複数のチップが含まれ、これらが夫々異な
る周波数マージンをもつ場合にも各チップ毎にデジタル
回路に内蔵された発振回路用インバータの伝播遅延時間
tdp及びゲインβを予め測定することにより、これら
の値から各チップ毎に適切な速度を自動的に設定して測
定することができる。
Even when multiple chips are included in the same wafer and each has a different frequency margin, as in the general manufacturing process of semiconductor devices, the oscillation built into the digital circuit of each chip is By measuring the propagation delay time tdp and gain β of the circuit inverter in advance, it is possible to automatically set and measure an appropriate speed for each chip from these values.

〈実施例〉 発振回路内蔵のデジタルLSIを多数個作成したウェハ
をテストする方法を実施例に挙げて説明する。
<Example> A method for testing a wafer on which a large number of digital LSIs each having a built-in oscillation circuit are fabricated will be described as an example.

デジタルLSIとしての機能を果すに要する一応の製造
工程を終えたウェハは、各半導体チップに分割すること
なくウェハ状態でLSIテストシステム1に装着される
。LSIテストシステム1に装着されたウェハ2は、各
チップ毎に少なく共発振回路用インバータ8を内蔵して
構成されている。
The wafer that has undergone the manufacturing steps required to function as a digital LSI is loaded into the LSI test system 1 in wafer form without being divided into individual semiconductor chips. The wafer 2 mounted on the LSI test system 1 is configured such that each chip has a small number of built-in inverters 8 for resonant circuits.

LSIテストシステム1は、各チップ2をテストするた
めに必要な制御信号を入・出力する制御回路4.後述す
る各チップのファクタを内蔵するメモリ5.メ゛モリ5
に格納された内容に基いて演算を実行゛シ、最適テスト
速度を算出する演算回路6及び演算e路6の結果が入力
されて適切な速度で発振動作する発振器7を含んで構成
される。
The LSI test system 1 includes a control circuit 4 that inputs and outputs control signals necessary for testing each chip 2. 5. Memory containing the factors of each chip, which will be described later. Memory 5
The oscillator 7 includes an arithmetic circuit 6 for calculating an optimum test speed and an oscillator 7 to which the result of the arithmetic circuit 6 is input and operates to oscillate at an appropriate speed.

上記LSIテストシステムにおいて、各チップの良、不
良を判別する前Iこ、この判定モードのテスト速度を決
定するためのファクタのプログラムが予め実行される。
In the above LSI test system, before determining whether each chip is good or bad, a factor program for determining the test speed of this determination mode is executed in advance.

即ち、制御回路4より第2図に示すパルス状の発振入力
信号Aがウェハl内のチップに内蔵されたインバータ3
に印加される。
That is, a pulse-like oscillation input signal A shown in FIG.
is applied to

該インバータ3は入力された信号Aに対応する出力信号
Bを形成し、テストシステムの制御回路4に入力する。
The inverter 3 forms an output signal B corresponding to the input signal A and inputs it to the control circuit 4 of the test system.

制御回路4においては、上記発振入力信号Aの上記発振
入力信号Aのパルス幅を越える長さに予め設定されてい
る。
In the control circuit 4, the length of the oscillation input signal A is set in advance to exceed the pulse width of the oscillation input signal A.

上記ストロ−゛ブ信号Sのスイープ動作中に、制御回路
4にはインバータ3の出力端子から出力信号Bが与えら
れるが、この出力信号Bはチップ2に内蔵された発振回
路の特性に応じて異なった遅延時間tdpを伴って現わ
れる。該遅延時間tdpは上記ストローブ信号Sを利用
して計測され、計測結果はウェハ内のチップ位置と対応
付けてメモリ5に記憶される。
During the sweep operation of the strobe signal S, the control circuit 4 is given an output signal B from the output terminal of the inverter 3. appear with different delay times tdp. The delay time tdp is measured using the strobe signal S, and the measurement result is stored in the memory 5 in association with the chip position within the wafer.

また同測定対象チップについて1発振回路用インバータ
3の入力信号レベルを”高”続いて1低”に変化させた
ときの各信号状態に、おけるインバータ3の出力電流力
1らゲインβも併せて測定され、同様にメモリ5に格納
させる。
In addition, for the same chip to be measured, when the input signal level of the inverter 3 for 1 oscillation circuit is changed from "high" to "1 low", the output current force 1 to gain β of the inverter 3 at each signal state is also calculated. are measured and stored in the memory 5 as well.

上記伝播遅延時間j dp及びゲインβの測定に要する
時間は極めて短時間であり、ウェハに設けられた各チッ
プについて予め上記伝播遅延時間tdp及びゲインβを
測定し、充分な容量を備えたメモリ5に記憶させる。
The time required to measure the propagation delay time j dp and gain β is extremely short, so the propagation delay time tdp and gain β are measured in advance for each chip provided on the wafer, and the memory 5 with sufficient capacity is to be memorized.

次に各チップの良品判別テストにおいては、セットされ
たチップ毎に、予め格納されてhるメモリ5の上記内容
(、t d、、及びβの値)と制御回路4より送出され
るバスデータとの差分を演算回路6にて演算し、各チッ
プがもつ遅延時間td、とゲインβに適した発振器7の
速度を設定する。発テストモードではデジタルLSIを
最適条件を設定して自動的に測定する。
Next, in a non-defective determination test for each chip, for each set chip, the above contents (values of t, d, and β) stored in the memory 5 and the bus data sent from the control circuit 4 are used. The arithmetic circuit 6 calculates the difference between the two and sets the speed of the oscillator 7 appropriate for the delay time td and gain β of each chip. In the generation test mode, the digital LSI is automatically measured under optimal conditions.

上記実施例はテスト条件を伝播遅延時間Ldpとゲイン
βを与えて決定したが、上記ファクタに限られることな
く、その他のファクタを用いてもよい。
In the above embodiment, the test conditions were determined by giving the propagation delay time Ldp and the gain β, but the test conditions are not limited to the above factors, and other factors may be used.

〈発明の効果〉 以上のように本発明によれば、予めデジタルLSIのデ
バイスパラメータのファクタについて各チップ毎に予め
バラツキを測定して記憶させることにより、デバイス良
品判定時のテストモードにおいて、効率的なテストスピ
ードにて自動測定することができ、テスト時間の短縮化
を図ることができる。また各デバイスに対応したテスト
を実行することができ、テスト精度を高めて良品を誤ま
って不良品と識別することをも防ぐことができる。
<Effects of the Invention> As described above, according to the present invention, by measuring and storing the variation in device parameter factors of digital LSI for each chip in advance, it is possible to efficiently perform the test mode when determining whether the device is good. Automatic measurement can be performed at a fast test speed, reducing test time. Furthermore, it is possible to perform tests that are compatible with each device, thereby increasing test accuracy and preventing erroneously identifying good products as defective products.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を説明するためのブロック図
、第2図は同実施例を説明するためのタイムチャートで
ある。 1:LSIテストシステム、2:チップ。 3:発振回路用インバータ、4:制御回路。
FIG. 1 is a block diagram for explaining an embodiment of the present invention, and FIG. 2 is a time chart for explaining the embodiment. 1: LSI test system, 2: chip. 3: Inverter for oscillation circuit, 4: Control circuit.

Claims (1)

【特許請求の範囲】 1)デジタルLSIのウェハテストにおいて、ウェハに
含まれる各チップに対して、テスト速度を規制する特性
を予め測定して結果をメモリに記憶させ、 チップテスト時に上記記憶内容を読み出して実使用時の
動作速度より速いテスト速度を設定しテストを実行する
ことを特徴とするウェハテスト方法。
[Claims] 1) In wafer testing of digital LSI, characteristics that regulate the test speed are measured in advance for each chip included in the wafer, and the results are stored in memory, and the above-mentioned stored contents are used during chip testing. A wafer testing method characterized by reading data, setting a test speed higher than the operating speed during actual use, and executing the test.
JP60116993A 1985-05-29 1985-05-29 Method for testing wafer Pending JPS61274335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60116993A JPS61274335A (en) 1985-05-29 1985-05-29 Method for testing wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60116993A JPS61274335A (en) 1985-05-29 1985-05-29 Method for testing wafer

Publications (1)

Publication Number Publication Date
JPS61274335A true JPS61274335A (en) 1986-12-04

Family

ID=14700817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60116993A Pending JPS61274335A (en) 1985-05-29 1985-05-29 Method for testing wafer

Country Status (1)

Country Link
JP (1) JPS61274335A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831918A (en) * 1994-02-14 1998-11-03 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6587978B1 (en) 1994-02-14 2003-07-01 Micron Technology, Inc. Circuit and method for varying a pulse width of an internal control signal during a test mode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831918A (en) * 1994-02-14 1998-11-03 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6529426B1 (en) * 1994-02-14 2003-03-04 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6587978B1 (en) 1994-02-14 2003-07-01 Micron Technology, Inc. Circuit and method for varying a pulse width of an internal control signal during a test mode

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