JPS6127358B2 - - Google Patents
Info
- Publication number
- JPS6127358B2 JPS6127358B2 JP57005760A JP576082A JPS6127358B2 JP S6127358 B2 JPS6127358 B2 JP S6127358B2 JP 57005760 A JP57005760 A JP 57005760A JP 576082 A JP576082 A JP 576082A JP S6127358 B2 JPS6127358 B2 JP S6127358B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- melt
- gaas
- single crystal
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57005760A JPS58125688A (ja) | 1982-01-18 | 1982-01-18 | 化合物半導体単結晶製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57005760A JPS58125688A (ja) | 1982-01-18 | 1982-01-18 | 化合物半導体単結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58125688A JPS58125688A (ja) | 1983-07-26 |
JPS6127358B2 true JPS6127358B2 (enrdf_load_stackoverflow) | 1986-06-25 |
Family
ID=11620073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57005760A Granted JPS58125688A (ja) | 1982-01-18 | 1982-01-18 | 化合物半導体単結晶製造装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58125688A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS472946U (enrdf_load_stackoverflow) * | 1971-01-28 | 1972-09-01 |
-
1982
- 1982-01-18 JP JP57005760A patent/JPS58125688A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58125688A (ja) | 1983-07-26 |
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