JPS61272382A - 化学蒸着法による窒化珪素自立体の製造方法 - Google Patents

Info

Publication number

JPS61272382A

JPS61272382A JP11560585A JP11560585A JPS61272382A JP S61272382 A JPS61272382 A JP S61272382A JP 11560585 A JP11560585 A JP 11560585A JP 11560585 A JP11560585 A JP 11560585A JP S61272382 A JPS61272382 A JP S61272382A

Authority

JP

Japan

Prior art keywords

film

base material

thickness

chemical vapor

silicon nitride

Prior art date

1985-05-29

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000000463 material Substances 0.000 title claims abstract description 35
• 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 11
• 238000000034 method Methods 0.000 title claims abstract description 6
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 5
• 238000004519 manufacturing process Methods 0.000 title claims description 10
• 238000000151 deposition Methods 0.000 title 1
• 239000000126 substance Substances 0.000 title 1
• 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
• 230000003247 decreasing effect Effects 0.000 abstract 1
• KJKKZSJXJPPWSI-UHFFFAOYSA-N n,6-dimethylhept-5-en-2-amine;1,5-dimethyl-2-phenylpyrazol-3-one;n-(4-hydroxyphenyl)acetamide;2,3,4,5-tetrahydroxyhexanedioic acid;2,2,2-trichloroethane-1,1-diol Chemical compound OC(O)C(Cl)(Cl)Cl.OC(O)C(Cl)(Cl)Cl.CNC(C)CCC=C(C)C.CC(=O)NC1=CC=C(O)C=C1.CN1C(C)=CC(=O)N1C1=CC=CC=C1.OC(=O)C(O)C(O)C(O)C(O)C(O)=O KJKKZSJXJPPWSI-UHFFFAOYSA-N 0.000 abstract 1
• 229910052710 silicon Inorganic materials 0.000 abstract 1
• 239000010703 silicon Substances 0.000 abstract 1
• 239000010408 film Substances 0.000 description 30
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
• 230000000694 effects Effects 0.000 description 5
• 239000000758 substrate Substances 0.000 description 4
• WMFYOYKPJLRMJI-UHFFFAOYSA-N Lercanidipine hydrochloride Chemical compound Cl.COC(=O)C1=C(C)NC(C)=C(C(=O)OC(C)(C)CN(C)CCC(C=2C=CC=CC=2)C=2C=CC=CC=2)C1C1=CC=CC([N+]([O-])=O)=C1 WMFYOYKPJLRMJI-UHFFFAOYSA-N 0.000 description 3
• 238000001816 cooling Methods 0.000 description 3
• 229910005091 Si3N Inorganic materials 0.000 description 2
• 230000015572 biosynthetic process Effects 0.000 description 2
• 238000005755 formation reaction Methods 0.000 description 2
• 238000005245 sintering Methods 0.000 description 2
• 241000931705 Cicada Species 0.000 description 1
• 101100133458 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) nit-2 gene Proteins 0.000 description 1
• 102100027340 Slit homolog 2 protein Human genes 0.000 description 1
• 101710133576 Slit homolog 2 protein Proteins 0.000 description 1
• 230000002411 adverse Effects 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 230000006835 compression Effects 0.000 description 1
• 238000007906 compression Methods 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 239000007789 gas Substances 0.000 description 1
• 238000003754 machining Methods 0.000 description 1
• 238000000465 moulding Methods 0.000 description 1
• 230000000149 penetrating effect Effects 0.000 description 1
• 238000003672 processing method Methods 0.000 description 1
• 239000010453 quartz Substances 0.000 description 1
• 239000012495 reaction gas Substances 0.000 description 1
• 238000003786 synthesis reaction Methods 0.000 description 1
• 239000010409 thin film Substances 0.000 description 1