JPS61268051A - Method of forming resistor for thick-film circuit substrate - Google Patents
Method of forming resistor for thick-film circuit substrateInfo
- Publication number
- JPS61268051A JPS61268051A JP11143485A JP11143485A JPS61268051A JP S61268051 A JPS61268051 A JP S61268051A JP 11143485 A JP11143485 A JP 11143485A JP 11143485 A JP11143485 A JP 11143485A JP S61268051 A JPS61268051 A JP S61268051A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance value
- value
- forming
- reheating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は厚膜回路基板の抵抗体形成方法、特に抵抗体
の抵抗値調整方法の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for forming a resistor on a thick film circuit board, and particularly to an improvement in a method for adjusting the resistance value of a resistor.
３４図〜第６図は従来の厚膜回路基板の抵抗体形成方法
を示すもので、図中、（１）はセラミック等の基板（２
）の表面に導体（３ａ）、（３ｂ）を電極として印刷、
乾燥後焼成により形成される抵抗体、（４）はこの抵抗
体（１）の形成後に抵抗体（１）および導体（３ａ）
。Figures 34 to 6 show a conventional method for forming a resistor on a thick film circuit board.
) Print conductors (3a) and (3b) as electrodes on the surface of
The resistor (4) is formed by drying and firing, and after the resistor (1) is formed, the resistor (1) and the conductor (3a) are formed.
.
（３ｂ）の保護として焼成されるガラスペーストである
。また（口）は導体形成工程、（２）は抵抗体形成工程
、ｏ１９は保護膜形成工程、（至）はトリオングｍｌ！
Ｉ工程である。(3b) is a glass paste that is fired as a protection. Also, (opening) is the conductor forming process, (2) is the resistor forming process, o19 is the protective film forming process, and (to) is Triong ml!
This is step I.
従来の厚膜回路基板の抵抗体形成方法は上記のように構
成され、基板（２）の表面に、まず導体（例えば銀−パ
ラジウム）の厚膜ペーストを印刷、乾燥し、その後８５
０℃前後で焼成して導体（３ａ） 。A conventional method for forming a resistor on a thick film circuit board is configured as described above. First, a thick film paste of a conductor (for example, silver-palladium) is printed and dried on the surface of the board (2), and then 85
The conductor (3a) is fired at around 0°C.
（３ｂ）を形成する。次いで、厚膜抵抗体ペーストを導
体（３ａ）、（３ｂ）を電極として印刷、乾燥し、その
後８５０℃前後で焼成して抵抗体（１）を形成する。(3b) is formed. Next, a thick film resistor paste is printed using the conductors (3a) and (3b) as electrodes, dried, and then fired at around 850° C. to form the resistor (1).
次いで、その上に、−導体（３ａ） 、’ （３１））
および抵抗体（１）の保護として、ガラスペースト（４
）を導体パット部分を除く全？［Ｋ印刷、乾燥して４０
０〜５００℃程度で焼成する。そして最後に、抵抗値を
測定し、レーザトリマ等のトリミング装置によシ設定値
まで抵抗体（１）をカットし、所定の抵抗値を得る。Then on top of that - conductor (3a),' (31))
and glass paste (4) to protect the resistor (1).
) all except the conductor pad part? [K printing, dried for 40 minutes
Fire at a temperature of about 0 to 500°C. Finally, the resistance value is measured, and the resistor (1) is cut to a set value using a trimming device such as a laser trimmer to obtain a predetermined resistance value.
′ 上記のような従来の厚膜回路基板の抵抗体形成方法
では、８５０℃前後で１回のみの焼成であり、全抵抗体
のうちの１つでも設計値を越えるとその基板は不良とな
るので、設計値からかなシ離れて（通常±２０〜±５０
１１６）目標値を設定しなければならず、従って、トリ
ミング量が多くなって加工時間、熱ストレスが増大し、
またトリミング用面積確保のため、抵抗体形状が大きく
必要である等の問題があった。' In the conventional method for forming resistors on thick-film circuit boards as described above, firing is performed only once at around 850°C, and if even one of the resistors exceeds the design value, the board will be defective. Therefore, it is a little far from the design value (usually ±20 to ±50
116) It is necessary to set a target value, so the amount of trimming increases, processing time and thermal stress increase,
Further, in order to secure an area for trimming, there was a problem that the shape of the resistor body had to be large.
この発明はかかる問題点を解決するためＫなされたもの
で、トリミング量を少なくすることができ、ま九トリミ
ング不可能なものをトリミング可能な良品とすることが
できる厚膜回路基板の抵抗体形成方法を得ることを目的
とする。This invention has been made to solve these problems, and it is possible to reduce the amount of trimming, and to form a resistor for a thick film circuit board, which can make a non-trimmable item into a good product that can be trimmed. The purpose is to obtain a method.
この発明に係る厚膜回路基板の抵抗体形成方法は、抵抗
体焼成工程の後に、抵抗値１１１１整のために抵抗体を
再加熱するようにしたものである。In the method for forming a resistor on a thick film circuit board according to the present invention, the resistor is reheated to adjust the resistance value to 1111 after the resistor firing step.
この発明においては、抵抗体焼成工程の後に。 In this invention, after the resistor firing step.
抵抗値調整のために抵抗体を再加熱するようにし、てい
るので、トリミング量を少なくすることができ−またト
リミング不可能なものをトリミング可能な良品とするこ
とができる。Since the resistor is reheated to adjust the resistance value, the amount of trimming can be reduced and items that cannot be trimmed can be made into good quality products that can be trimmed.
第１図はこの発明の一実施例を示すもので１図中、第４
図と同一符号は同−又は相轟部分を示す。FIG. 1 shows an embodiment of the present invention.
The same reference numerals as in the figures indicate the same or similar parts.
（４）は抵抗体再加熱工程で、保ｓＩＮ形成後、抵抗体
の抵抗値を測定し、その抵抗値の設計値との偏差量に応
じた加熱温度１時間を設定して再加熱を行なう。(4) is the resistor reheating process, in which after forming the sIN, the resistance value of the resistor is measured, and the heating temperature is set for 1 hour according to the deviation of the resistance value from the designed value, and reheating is performed. .
第２図は抵抗体形成方法四で形成された抵抗体の抵抗値
分布を示すもので１図中破線で示す分布は従来のもので
％ （ＲＴ）がその目標値である。また図中実線で示
す分布はこの実施例のもので％（Ｒ’Ｔ）がその目標値
でアシ１．設計値（ＲＤ）により近い分布となっている
。FIG. 2 shows the resistance value distribution of the resistor formed by resistor formation method 4. The distribution indicated by the broken line in FIG. 1 is the conventional distribution, and % (RT) is its target value. Also, the distribution shown by the solid line in the figure is for this example, and % (R'T) is the target value and the reed is 1. The distribution is closer to the design value (RD).
上記のように構成された厚膜回路基板の抵抗体形成方法
において、厚膜抵抗体の抵抗値は、第２図に示すように
一般に目標値（ＲＴ）、（Ｒ’ 、）の両側に正規分布
となるが、この実施例のものは、抵抗体再加熱工程に）
における再加熱によシ抵抗値が調整され、その中心の目
標値（Ｒ’、）が設計値、 （ＲＤ）Ｋよプ近い正規分
布となっている。In the method for forming a resistor of a thick film circuit board configured as described above, the resistance value of the thick film resistor is generally normalized on both sides of the target value (RT) and (R', ), as shown in FIG. distribution, but in this example, the resistor reheating process)
The resistance value is adjusted by reheating at , and the target value (R',) at the center is a normal distribution close to the design value (RD)K.
この場合の再加熱の温度と時間は、使用厚膜抵抗ペース
トの組成によりその特性が異なるので、抵抗値変化特性
と加熱条件のデータを蓄積して決定することが必要であ
る。The reheating temperature and time in this case need to be determined by accumulating data on resistance value change characteristics and heating conditions, since the characteristics vary depending on the composition of the thick film resistor paste used.
ところで、従来のものは、トリミングによる抵抗値増加
調整に備え、その目標値（ＲＴ）を設計値的）よシ小さ
く設定することになるが、印刷によるパラ付きが大きい
ため、目標値（ＲＴ）をかなシ低く設定せざるを得ない
。このため、トリミング加工を施しても、第２図に不連
続斜線を施して示すように設定値まで到達し得ない不良
抵抗体（マイナス不良抵抗体）の発生が不可避であった
。By the way, in the conventional method, the target value (RT) is set to be smaller than the design value in preparation for the resistance value increase adjustment due to trimming, but since there is a large variation due to printing, the target value (RT) I have no choice but to set the kana low. For this reason, even if trimming is performed, the occurrence of defective resistors (minus defective resistors) that cannot reach the set value is inevitable, as shown by discontinuous diagonal lines in FIG.
ところがとの実施例のものは、正規分布の中心値である
目標値（Ｒ’Ｔ）を設計値（ＲＤ）によシ近付けること
ができるので、ｌ／Ｅ２図に連続斜線を施して示すよう
にマイナス不良抵抗体が減少するのみならず、トリミン
グ加工量も縮減できる。However, in the example described above, the target value (R'T), which is the center value of the normal distribution, can be brought closer to the design value (RD), so This not only reduces the number of negative resistors, but also reduces the amount of trimming.
なお、上記実施例では抵抗体再加熱工程に）を保護膜形
成工程ａ印の後に行なうものについて説明したが、抵抗
体形成工程（２）の直後に行なうようにしてもよく、ま
た保ｗｉＭ形成と抵抗体再加熱とを同一工程で行なうよ
うにしてもよく、いずれの場合でも上記実施例と同様の
効果が期待できる。In the above embodiment, the resistor reheating step) was described as being performed after the protective film forming step (a), but it may be performed immediately after the resistor forming step (2), or the resistor reheating step It is also possible to perform the resistor reheating and the resistor reheating in the same process, and in either case, the same effects as in the above embodiment can be expected.
また、上記実施例では抵抗体再加熱工程に）により目標
値（Ｒ’Ｔ）を設計値（ＲＤ）に近付ける。すなわち抵
抗値を増加させる側に調整するものについて説明したが
、第３図に示すように厚膜抵抗ペーストの種類によシ再
加熱によって目標値（Ｒ’、）を設計値（ＲＤ）から離
れる側に調整し、図中不連続斜線を施して示すプラス不
良抵抗体（抵抗値が設定値よシ高いもの）の抵抗値を下
げるようにしてもよい。これによシ、トリミングが不可
能なものをトリミングが可能な良品とすることができる
〇〔発明の効果〕
この発明は以上説明したとおシ、抵抗体焼成工程の後に
、抵抗値調整のために抵抗体を再加熱す−るようにして
いるので、トリミング加工時間の短縮によるコストダウ
ンおよびトリミング加工熱（ヒートショック）の縮減に
よる品質向上を図ることができるとともに、再加熱に伴
なう熱ストレスの軽減（エージング効果）による品質向
上を図ることができる。また、最小抵抗体形状の縮小に
よる抵抗体実装密度の向上および基板の小型化を図るこ
とができる等の効果がある。Furthermore, in the above embodiment, the target value (R'T) is brought closer to the design value (RD) by the resistor reheating process. In other words, we have explained how to adjust the resistance value to increase it, but as shown in Figure 3, depending on the type of thick film resistor paste, the target value (R',) can deviate from the design value (RD) by reheating. The resistance value of the plus defective resistor (those whose resistance value is higher than the set value) shown by discontinuous diagonal lines in the figure may be lowered by adjusting the resistance value to the side. As a result, items that cannot be trimmed can be made into good quality products that can be trimmed. [Effects of the Invention] As described above, this invention can be used to adjust the resistance value after the resistor firing process. Since the resistor is reheated, it is possible to reduce costs by shortening trimming processing time and improve quality by reducing trimming processing heat (heat shock), while also reducing heat stress caused by reheating. It is possible to improve quality by reducing the aging effect (aging effect). Furthermore, there are effects such as an improvement in the mounting density of the resistor and a reduction in the size of the board by reducing the shape of the minimum resistor.
第１図はこの発明の一実施例を示す製造工程図、第２図
および第３図はこの発明の作用を示す説明図、第４図は
従来の厚膜回路基板の抵抗体形成方法を示す第１図和尚
図、第５図は厚膜抵抗体の構成を示す平面図、第６図は
同様の断面図である。
ａａ：抵抗体形成工ｍｏｗ：保護膜形成工程に）：抵抗
体再加熱工程
なお各図中、同一符号は同−又は相当部分を示すものと
する。Fig. 1 is a manufacturing process diagram showing an embodiment of the present invention, Figs. 2 and 3 are explanatory diagrams showing the operation of the invention, and Fig. 4 shows a conventional method for forming a resistor on a thick film circuit board. FIG. 1 is a diagram of a Japanese priest, FIG. 5 is a plan view showing the structure of a thick film resistor, and FIG. 6 is a similar sectional view. aa: resistor forming process mow: protective film forming process): resistor reheating process In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
体を形成するものにおいて、抵抗体焼成工程の後に、抵
抗値調整のために抵抗体を再加熱することを特徴とする
厚膜回路基板の抵抗体形成方法。 （２）抵抗体の再加熱を、保護膜形成工程の前後いずれ
かで行なうことを特徴とする特許請求の範囲第１項記載
の厚膜回路基板の抵抗体形成方法。 （８）抵抗体の再加熱を、保護膜形成工程において行な
うことを特徴とする特許請求の範囲第１項記載の厚膜回
路基板の抵抗体形成方法。[Claims] (1) In a device in which a resistor is formed by printing, drying and firing a thick film resistor paste, the resistor is reheated to adjust the resistance value after the resistor firing step. A method for forming a resistor on a thick film circuit board, characterized by: (2) The method for forming a resistor on a thick film circuit board according to claim 1, wherein the resistor is reheated either before or after the protective film forming step. (8) A method for forming a resistor on a thick film circuit board according to claim 1, wherein the resistor is reheated in the step of forming a protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11143485A JPS61268051A (en) | 1985-05-22 | 1985-05-22 | Method of forming resistor for thick-film circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11143485A JPS61268051A (en) | 1985-05-22 | 1985-05-22 | Method of forming resistor for thick-film circuit substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61268051A true JPS61268051A (en) | 1986-11-27 |
Family
ID=14561092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11143485A Pending JPS61268051A (en) | 1985-05-22 | 1985-05-22 | Method of forming resistor for thick-film circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61268051A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123037A (en) * | 1974-08-20 | 1976-02-24 | Matsushita Electric Ind Co Ltd | |
| JPS5148199A (en) * | 1974-10-22 | 1976-04-24 | Matsushita Electric Ind Co Ltd | METARUGUREEZUTEIKOTAINO TEIKO CHISHUSEIHO |
| JPS541866A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Method of making resistive film |
-
1985
- 1985-05-22 JP JP11143485A patent/JPS61268051A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123037A (en) * | 1974-08-20 | 1976-02-24 | Matsushita Electric Ind Co Ltd | |
| JPS5148199A (en) * | 1974-10-22 | 1976-04-24 | Matsushita Electric Ind Co Ltd | METARUGUREEZUTEIKOTAINO TEIKO CHISHUSEIHO |
| JPS541866A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Method of making resistive film |
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