JPS61260624A - Infrared ray lamp heat treatment device - Google Patents

Infrared ray lamp heat treatment device

Info

Publication number
JPS61260624A
JPS61260624A JP10347685A JP10347685A JPS61260624A JP S61260624 A JPS61260624 A JP S61260624A JP 10347685 A JP10347685 A JP 10347685A JP 10347685 A JP10347685 A JP 10347685A JP S61260624 A JPS61260624 A JP S61260624A
Authority
JP
Japan
Prior art keywords
heat
heated
resistant
resistant container
objects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10347685A
Other languages
Japanese (ja)
Inventor
Mikio Takebayashi
幹男 竹林
Junichi Nozaki
野崎 順一
Naoki Suzuki
直樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10347685A priority Critical patent/JPS61260624A/en
Publication of JPS61260624A publication Critical patent/JPS61260624A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation

Abstract

PURPOSE:To contrive to improve the uniformity of the surface temperatures of objects to be heated using the title device by a method wherein the device is provided with heat-resistant thin plates, which are set up in the heat-resistant container in such a way as to surround the periphery of the supporting stand, whereon the objects to be heated are disposed, and are turned into the secondary heat sources without allowing light to transmit. CONSTITUTION:This infrared ray lamp heat treatment device is provided with heat-resistant thin plates 11, which are set up in a heat-resistant container 3 in such a way as to surround the periphery of a supporting stand 4, whereon objects to be heated are disposed, and are turned into the secondary heat sources without allowing light to transmit. By this constitution, the thin plates 11 to be irradiated with the rays of light of infrared ray lamps 6 are turned into the secondary heat sources and the objects to be heated are uniformly heated. Accordingly, the uniformity of the surface temperatures of the objects to be heated is improved and even when the objects to be heated are held vertically or slantingly, the uniformity of the surface tempertures is not deteriorated.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、N2あるいはH2ガス雰囲気中での赤外線ラ
ンプ熱処理装置、特に半導体工業で利用されるシリコン
ウェハの熱処理装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an infrared lamp heat treatment apparatus in an N2 or H2 gas atmosphere, and in particular to a heat treatment apparatus for silicon wafers used in the semiconductor industry.

従来の技術 元来、熱処理装置は電気炉で加熱するという方法が採用
されていた。しかし、ガス雰囲気中で加熱冷却を行なう
際に、電気炉ではその熱容量が大きいため急加熱急冷却
ができない。そこで近年装置自体の熱容量が小さいため
、急加熱急冷却が可能な赤外線ランプ熱処理装置が注目
を浴びてきた。
Conventional technology originally employed a method of heating in an electric furnace for heat treatment equipment. However, when performing heating and cooling in a gas atmosphere, an electric furnace cannot perform rapid heating and cooling due to its large heat capacity. Therefore, in recent years, infrared lamp heat treatment equipment that is capable of rapid heating and rapid cooling has attracted attention because the heat capacity of the equipment itself is small.

従来の赤外線ランプ熱処理装置は第3図にその具体構成
を示すように、ガス供給口31とガス排気口32とを持
つ石英容器33の中に半導体ウェハ35を水平に置いた
支持板34を挿入し、N2ガスをガス供給口31から流
しながら赤外線ランプ36で加熱(る。加熱中に石英容
器33自体が加熱されないよう周囲より空冷する。
As shown in FIG. 3, a conventional infrared lamp heat treatment apparatus has a structure in which a support plate 34 with a semiconductor wafer 35 placed horizontally is inserted into a quartz container 33 having a gas supply port 31 and a gas exhaust port 32. Then, the quartz container 33 is heated with an infrared lamp 36 while flowing N2 gas from the gas supply port 31. The quartz container 33 is air-cooled from its surroundings so that it does not get heated during heating.

また、37は赤外線ランプ36の光線を有効に利用する
ため赤外線ランプ36の光線を石英容器33の内部に集
める反tA!1である。38はガスを分散供給するため
の多孔を有する石英ガラスからなる供給管である。39
はOリング、40は蓋である。
Further, 37 is an anti-tA! which collects the light beam of the infrared lamp 36 inside the quartz container 33 in order to utilize the light beam of the infrared lamp 36 effectively. It is 1. Reference numeral 38 denotes a supply pipe made of quartz glass and having porous holes for supplying gas in a distributed manner. 39
is an O-ring, and 40 is a lid.

発明が解決しようとする問題点 しかしながら上記のような構成では、赤外線ランプ36
の光線が半導体つ■ハコ5の表面に直接照射されるため
、その表面における光量にむらが生じ、半導体ウェハ3
5の表面の温度が不均一になるという問題点を有してい
た。かつまた、半導体つ■ハコ5を水平に支持するため
一瓜に処理可能な半導体ウェハ35の枚数が極めて少な
いという問題点を有していた。
Problems to be Solved by the Invention However, in the above configuration, the infrared lamp 36
Since the light beam is directly irradiated onto the surface of the semiconductor wafer 5, the amount of light on the surface becomes uneven, and the semiconductor wafer 3
5 had a problem in that the temperature on the surface became non-uniform. Furthermore, since the semiconductor wafer 5 is supported horizontally, the number of semiconductor wafers 35 that can be processed at one time is extremely small.

本発明は上記問題点を解決づるもので、半導体ウェハ表
面の温度均一性に優れ、かつ一度に大量の半導体ウェハ
を処理可能とする、急加熱急冷加部可能な赤外線ランプ
熱処理装置を提供するものである。
The present invention solves the above-mentioned problems, and provides an infrared lamp heat treatment apparatus capable of rapid heating and rapid cooling, which has excellent temperature uniformity on the surface of semiconductor wafers, and can process a large number of semiconductor wafers at once. It is.

問題点を解決覆るだめの手段 上記問題点を解決するめに本発明は、ガスの供給口とガ
スの排気口を有し、光を透過する耐熱性容器と、前記耐
熱性容器の外部に配置されて前記耐熱性容器の内部を加
熱光線で照射する赤外線ランプと、前記赤外線ランプか
ら出Iこ光線を前記耐熱性容器に集めるための反射面を
持った反Ij $1と、前記耐熱性容器の内部にあって
複数枚の薄板状の被加熱物が垂直あるいは傾斜配置され
る支持台と、被加熱物を配置した支持台のff1l[E
llを囲むように前記耐熱性容器内に設置され、光を透
過せずに2次熱源となる耐熱性薄板とを有する構成にし
たものである。
Means for Solving and Overcoming the Problems In order to solve the above-mentioned problems, the present invention provides a heat-resistant container that has a gas supply port and a gas exhaust port and that transmits light, and a heat-resistant container that is disposed outside the heat-resistant container. an infrared lamp for irradiating the inside of the heat-resistant container with heating light; ff1l[E
The heat-resistant thin plate is installed in the heat-resistant container so as to surround the heat-resistant container, and serves as a secondary heat source without transmitting light.

作用 この構成により、被加熱物番よ垂直あるいは傾斜しで保
持されるので、大量処理が可能となることは明らかであ
る。しかし従来例のような装置において、垂直あるいは
傾斜して保持すれば、被加熱物表面への光量のむらがさ
らに大きくなり、均熱性の悪化につながる。そこで、被
加熱物を配置した支持台の周囲を囲むように容器内に耐
熱性薄板が設置されると、赤外線ランプの光線が照射さ
れた耐熱性薄板が2次光源となり、これにより被加熱物
が加熱される。この時、耐熱性薄板から被加熱物上への
輻射は耐熱性薄板を設置Uずに直接に赤外線ランプの光
線が照射された場合に比べて極めて均一性が高くなる。
It is clear that with this configuration, the number of objects to be heated can be held perpendicular or at an angle, making it possible to process large quantities. However, in a conventional device, if the device is held vertically or inclined, the amount of light applied to the surface of the object to be heated becomes even more uneven, leading to deterioration of thermal uniformity. Therefore, if a heat-resistant thin plate is installed inside the container so as to surround the support base on which the heated object is placed, the heat-resistant thin plate that is irradiated with the infrared lamp's light becomes a secondary light source, which causes the heated object to be heated. is heated. At this time, the radiation from the heat-resistant thin plate onto the object to be heated becomes extremely uniform compared to the case where the infrared lamp's light beam is directly irradiated without installing the heat-resistant thin plate.

従って、被加熱物の表面温度の均一性が向上し、被加熱
物を垂直あるいは傾斜して保持しても温度の均一性が劣
化することはない。 又、加熱中、耐熱性容器はその周
囲より空冷しているが、耐熱性薄板は耐熱性容器内に設
置されるため、耐熱性容器自体の冷部特性を損なうこと
はない。さらにまた、耐熱性薄板はその熱容量が極めて
小さいので、急加熱急冷却の特性にも影響がない。
Therefore, the uniformity of the surface temperature of the object to be heated is improved, and even if the object to be heated is held vertically or inclined, the uniformity of temperature will not deteriorate. Further, during heating, the heat-resistant container is air-cooled from its surroundings, but since the heat-resistant thin plate is installed inside the heat-resistant container, the cooling characteristics of the heat-resistant container itself are not impaired. Furthermore, since the heat-resistant thin plate has an extremely small heat capacity, it does not affect the properties of rapid heating and cooling.

実施例 以下本発明の一実施例について図面を参照しながら説明
する。
EXAMPLE An example of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例における赤外線ランプ熱処理
装置を示す。第1図において、1はガス供給[」、2は
ガスv1気口、3は石英容器、4は半導体ウェハ5を垂
直に多数枚配置することができる石英ガラスからなる支
持台、6は赤外線ランプ、7は赤外線ランプ6の光線を
石英容器3の内部に集める反射鏡、8はガスを分散供給
するための多−5一 孔を有Jる石英ガラスからなるガス供給管、9は0リン
グ、10は益、11は石英容器の内部にステンレスの薄
板(厚さ0.1#lIl+)で形成した円筒状耐熱性薄
板である。第2図は第1図におけるA−へ断面図である
FIG. 1 shows an infrared lamp heat treatment apparatus in one embodiment of the present invention. In FIG. 1, 1 is a gas supply ['', 2 is a gas v1 vent, 3 is a quartz container, 4 is a support made of quartz glass on which a large number of semiconductor wafers 5 can be vertically arranged, and 6 is an infrared lamp. , 7 is a reflecting mirror that collects the light beam of the infrared lamp 6 inside the quartz container 3; 8 is a gas supply pipe made of quartz glass having multiple holes for dispersing and supplying gas; 9 is an O-ring; Reference numeral 10 denotes a heat-resistant thin plate, and 11 is a cylindrical heat-resistant thin plate formed of a thin stainless steel plate (thickness 0.1 #lIl+) inside the quartz container. FIG. 2 is a sectional view along line A in FIG. 1.

このような装置において、N2ガスを毎分10Q供給し
ながら加熱した場合の石英容器3内の中央付近に配置し
た半導体ウェハ5上の温度分布を第4図に示す。測定点
は第4図に示すように垂直および水平の中心線に沿って
9点を選び、熱伝対を半導体ウェハ5上に固着して測定
を行なった。図中、実線は本実施例における結果である
。破線は本実施例より円筒状耐熱性薄板11を取り去っ
た装置による結果であり、第3図に示した従来例による
装置においてもほぼ同様の温度分布のばらつきを有して
いた。
FIG. 4 shows the temperature distribution on the semiconductor wafer 5 placed near the center of the quartz container 3 when heated while supplying N2 gas at 10 Q/min in such an apparatus. As shown in FIG. 4, nine measurement points were selected along the vertical and horizontal center lines, and the thermocouples were fixed on the semiconductor wafer 5 for measurement. In the figure, the solid line is the result in this example. The broken line is the result obtained by the apparatus in which the cylindrical heat-resistant thin plate 11 was removed from the present example, and the apparatus according to the conventional example shown in FIG. 3 had almost the same variation in temperature distribution.

第4図j、り明らかなように、円筒状耐熱性薄板11を
設置することにより、半導体ウェハ5 、Lの温度の均
一性が向上していることがわかる。
As is clear from FIG. 4J, by installing the cylindrical heat-resistant thin plate 11, the temperature uniformity of the semiconductor wafers 5 and L is improved.

なお、本実施例において円筒状耐熱性薄板11としてス
テンレスを使用したが、モリブデン、チタン、白金等を
含む材料でもよい。
Although stainless steel is used as the cylindrical heat-resistant thin plate 11 in this embodiment, materials containing molybdenum, titanium, platinum, etc. may also be used.

また、本実施例では6英容器3を使用したが、光透過性
の耐熱性容器であればよい。また、本実施例では、半導
体つ71ハ5は垂直配置としたが、傾斜配置でもよい。
Furthermore, although the 6-English container 3 was used in this embodiment, any light-transmissive, heat-resistant container may be used. Further, in this embodiment, the semiconductor tube 71c5 is arranged vertically, but it may be arranged at an inclined angle.

発明の効果 以上のように本発明は、複数枚の薄板状の被加熱物を垂
直あるいは傾斜配置することができる支持台と、被加熱
物を配置しjこ支持台の周囲を取り囲むように耐熱性容
器内に設置され、光を透過せずに第2次熱源となる耐熱
性薄板を設けることにより、被加熱物を一度に大川処理
可能にし、被加熱物の表面温瘍均−性を向上させ、かつ
急加熱急冷却を可能にする。
Effects of the Invention As described above, the present invention provides a support base on which a plurality of thin plate-shaped objects to be heated can be arranged vertically or obliquely, and a heat-resistant structure for arranging the objects to be heated and surrounding the support stand. By installing a heat-resistant thin plate that is installed inside the heating container and acts as a secondary heat source without transmitting light, the object to be heated can be treated in large quantities at one time, improving the uniformity of the surface temperature of the object to be heated. and enables rapid heating and cooling.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本実施例における赤外線ランプ熱処理装置の断
面図、第2図は第1図の△−A断面図、第3図は従来の
赤外線ランプ熱処理装置の断面図、第4図は本発明及び
本発明より円筒状耐熱性薄板を抜き去った装置で加熱し
た半導体つJハの温度分布を示す図である。 3・・・耐熱性容器、4・・・支持台、5・・・半導体
つTハ、6・・・赤外線ランプ、7・・・反射鏡、11
・・・耐熱性薄板 代理人     森   本   義   弘”)すI
/)Nト%々 温度(1C)
Fig. 1 is a sectional view of the infrared lamp heat treatment apparatus in this embodiment, Fig. 2 is a sectional view taken along the line △-A in Fig. 1, Fig. 3 is a sectional view of the conventional infrared lamp heat treatment apparatus, and Fig. 4 is the invention. FIG. 3 is a diagram showing the temperature distribution of the semiconductor tube heated by the apparatus in which the cylindrical heat-resistant thin plate is removed from the present invention. 3... Heat-resistant container, 4... Support stand, 5... Semiconductor tube, 6... Infrared lamp, 7... Reflector, 11
...Heat-resistant thin plate agent Yoshihiro Morimoto") I
/)Nt% Temperature (1C)

Claims (1)

【特許請求の範囲】[Claims] 1、ガスの供給口とガスの排気口を有し、光を透過する
耐熱性容器と、前記耐熱性容器の外部に配置されて前記
耐熱性容器の内部を加熱光線で照射する赤外線ランプと
、前記赤外線ランプから出た光線を前記耐熱性容器に集
めるための反射面を持った反射鏡と、前記耐熱性容器の
内部にあつて複数枚の薄板状の被加熱物が垂直あるいは
傾斜配置される支持台と、被加熱物を配置した支持台の
周囲を囲むように前記耐熱性容器内に設置され、光を透
過せずに2次熱源となる耐熱性薄板とを有する赤外線ラ
ンプ熱処理装置。
1. A heat-resistant container that has a gas supply port and a gas exhaust port and that transmits light; an infrared lamp that is placed outside the heat-resistant container and irradiates the inside of the heat-resistant container with heating light; A reflecting mirror having a reflective surface for concentrating light beams emitted from the infrared lamp onto the heat-resistant container, and a plurality of thin plate-shaped objects to be heated inside the heat-resistant container are arranged vertically or at an angle. An infrared lamp heat treatment device comprising: a support base; and a heat-resistant thin plate that is installed in the heat-resistant container so as to surround the support base on which an object to be heated is disposed, and serves as a secondary heat source without transmitting light.
JP10347685A 1985-05-14 1985-05-14 Infrared ray lamp heat treatment device Pending JPS61260624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10347685A JPS61260624A (en) 1985-05-14 1985-05-14 Infrared ray lamp heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10347685A JPS61260624A (en) 1985-05-14 1985-05-14 Infrared ray lamp heat treatment device

Publications (1)

Publication Number Publication Date
JPS61260624A true JPS61260624A (en) 1986-11-18

Family

ID=14355058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10347685A Pending JPS61260624A (en) 1985-05-14 1985-05-14 Infrared ray lamp heat treatment device

Country Status (1)

Country Link
JP (1) JPS61260624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245158A (en) * 1991-01-17 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device manufacturing apparatus
JP2009236375A (en) * 2008-03-26 2009-10-15 Tdk Corp Kiln

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245158A (en) * 1991-01-17 1993-09-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device manufacturing apparatus
JP2009236375A (en) * 2008-03-26 2009-10-15 Tdk Corp Kiln

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