KR101537215B1 - Appratus for treatmenting substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus for providing an optical lens at a position corresponding to a portion having heat accumulation or heat loss in a substrate stand for overcoming a temperature deviation of the substrate stand, Chamber; A substrate table placed in the reaction space and on which the substrate is placed; And a heating unit located at a lower portion of the chamber, the heating unit including a lamp, a reflector reflecting the emitted light of the lamp, and an optical lens positioned on the lamp, for heating the substrate platform .

A substrate processing apparatus, a heating means, a condenser lens, a light diffusion lens

Description

[0001] Appratus for treatment substrate [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which an optical lens is provided at a position corresponding to a portion having heat accumulation or heat loss in a substrate stand, .

Generally, in order to manufacture a semiconductor device, a display device, and a thin film solar cell, a thin film deposition process for depositing a thin film of a specific material on a substrate, a photolithography process for exposing or concealing a selected one of the thin films using a photosensitive material, And an etching process in which the thin film is removed and patterned. Among these processes, the thin-film deposition process and the etching process are performed in a vacuum-optimized substrate processing apparatus.

FIG. 1 is a schematic view of a conventional substrate processing apparatus, FIG. 2 is a layout diagram of a lamp and an object for temperature measurement according to the related art, and FIG. 3 is a temperature measurement result of FIG.

1, a substrate processing apparatus 10 used for manufacturing a semiconductor device includes a chamber 12 for providing a reaction space, a gate valve (gate an exhaust port 18 for discharging the gas inside the chamber 12, a substrate table 20 on which the substrate 14 is placed, an edge ring 16 installed along the outer circumference of the substrate table 20, an edge ring 30 and upper and lower heating devices 22 and 28 installed at the upper and lower portions of the chamber 12 for heating the substrate 14.

The chamber 12 is divided into an upper region and a lower region that engages with the upper region. The upper region and the lower region are composed of an upper dome 24 and a lower dome 26 each having a curved surface. A bell jar heater including an RF electrode (not shown) is provided as an upper heating device 22 on the upper part of the chamber 12 to maintain the inside of the chamber 12 at a high temperature, A lamp heater is installed as a lower heating device 28. [ The substrate processing apparatus 10 is provided with a support table 32 for supporting the substrate table 14 and raising and lowering the substrate table 14 and a drive device 34 including a cylinder and a motor for driving the support table 30. The support base 32 includes a central support 36 for supporting the center of the platform 14 and a plurality of peripheral supports 38 for supporting the periphery of the platform 14.

The lower dome 26 forms an inclined surface from the outer periphery of the chamber 12 to the periphery of the supporter 32 and divides the lower portion of the chamber 12 into the inner region 40 and the outer region 42, (28). The lower heating device 28 includes a first lower heating device installed in the inner region 40 and a second lower heating device installed in the outer region 42. The first lower heating device includes a plurality of first lamps 44 disposed in the interior region 40 centered on a support 32 and arranged in the lower and side surfaces of the first lamps 44, And a reflection plate 46. The second lower heating apparatus includes a plurality of second lamps 48 disposed in the outer region 42 centered on the support 32 and arranged in the lower and side of the plurality of second lamps 48, And a reflector 50.

Since the plurality of first and second lamps 44 and 48 are disposed adjacent to the lower dome 26, the distance between the substrate table 20 and the first and second lamps 44 and 48 And the position of the substrate bench 20. The first and second reflectors 46 and 50 may include cooling passages (not shown) for cooling.

It is difficult to measure the temperature of the substrate table 20 heated by the lower heating device 28 inside the chamber 12 so that the test lamp 52 and the test lamp 52, 54b, 54c, and 54d that are spaced apart from each other by a predetermined distance from the first to fourth objects 54a, 54b, 54c, and 54d, (Not shown), for example, a thermocouple. The temperature distribution of the substrate placing table 20 in the chamber 12 can be predicted by the arrangement of the test lamp 52 and the first to fourth objects 54a, 54b, 54c and 54d as shown in Fig.

 The positions of the first to fourth objects 54a, 54b, 54c and 54d disposed in the periphery of the test lamp 52 are set such that the position of the test lamp 52 The first object 54a and the second object 54b at a distance of 30 cm from the first object 54a and the third object 54b at a distance of 30 cm from the second object 54b, (54c). The first and third objects 54a, 54b, 54 are located on the same horizontal plane. The fourth object 54d is disposed horizontally at an interval A of the test lamp 52. [

Table 1 shows the results of measuring the temperature changes of the first and fourth objects 54a, 54b, 54c and 54d according to the change of the interval A. The conditions for heating the first to fourth objects 54a, 54b, 54c and 54d by the test lamp 52 are as follows: a test lamp 52 of 200 V / 2000 W is used and the ambient temperature is 20 to 24 degrees , And the humidity is 50%.

Table 1

Clearance A (mm) The first object (° C) The second object (° C) Third object (캜) The fourth object (캜) 20 903.5 698.0 221.0 115.4 50 542.1 429.9 247.9 59.5 100 245.6 224.3 191.7 36.8 190 121.4 118.8 124.2 30.2 276 76.5 76.2 80.6 29.1

In Table 1, the temperature distribution of the first and fourth objects (54a, 54b, 54c, 54d) changes along the interval A and light is emitted as radiation from the test lamp 52. Therefore, The fourth object 54d disposed horizontally spaced apart from the test lamp 52 is positioned at a distance from the first object to the third object 54d, 54a, 54b, and 54c, it can be seen that the test lamp 52 and the test lamp 52 are hardly heated in the horizontal direction. FIG. 3 is a graph of Table 1, It can be seen that the measured temperature is inversely proportional. If the interval A is small, the measured temperature is high, and if the interval A is large, the measured temperature is low.

1, a plurality of first lamps 44 of the inner region 40 heats the central portion of the substrate pedestal 20 and a plurality of outer regions 42 The second lamp 48 heats the edge ring 30 and the outer portion of the substrate table 20. However, as can be seen from Figs. 2 and 3, since the temperature fluctuation occurs in accordance with the interval and the vertical and horizontal directions of the test lamp 52, in the conventional substrate processing apparatus 10, ) Is difficult to maintain uniformly.

1, the distance between the second lamps 48 provided in the outer region 42 and the edge ring 30 is about 180 mm and the number of the second lamps 48 is about 180 mm. And the substrate table 20 is about 270 mm. As can be seen from Table 1 and FIG. 2-3, when the interval A is within 100 mm, temperature deviations of the first to third objects 54a, 54b and 54c are significant, and when the interval A is 190 mm or more, It does not. 1, when the interval between the second lamps 48 and the edge ring 30 is about 180 mm and the distance between the second lamps 48 and the substrate table 20 is about 270 mm, The heat accumulation continues in the central portion of the substrate table 20 and the heat loss is continued in the outer periphery of the substrate table 20 and the edge ring 30 so that the temperature difference between the outer periphery and the central portion of the substrate table 20 A difference in growth of the thin film on the substrate 14 is generated, which may result in deterioration of the characteristics of the thin film as well as in productivity.

In order to overcome the above-described problems of the prior art, the present invention provides a substrate processing apparatus for mounting an optical lens on a portion corresponding to a portion having heat accumulation or heat loss in a substrate stand, And to provide the above-mentioned objects.

Another object of the present invention is to provide a substrate processing apparatus for compensating heat loss by providing a condenser lens at a position corresponding to the outer periphery of a substrate stand having heat loss.

Another object of the present invention is to provide a substrate processing apparatus in which a heat diffusion is dispersed by providing a light diffusion lens at a position corresponding to a central portion of a substrate stand having heat accumulation.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a chamber for providing a reaction space; A substrate table placed in the reaction space and on which the substrate is placed; And a heating unit located at a lower portion of the chamber and including a lamp, a reflector reflecting the emitted light of the lamp, and an optical lens disposed on the lamp, for heating the substrate platform. / RTI >

In the above-described substrate processing apparatus, the heating means may include: a first heating means installed in an inner region corresponding to a central portion of the chamber, the first heating means comprising a plurality of first lamps and a first reflector; And second heating means installed in an outer region corresponding to an outer region of the chamber and corresponding to the inner region, the second heating means comprising a plurality of second lamps, a second reflection plate, and a condenser lens.

In the substrate processing apparatus as described above, the outer region is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through the central portion of the chamber, and the focusing lens has the same shape as the sub- .

In the above-described substrate processing apparatus, the condensing lens is a convex lens.

In the above-described substrate processing apparatus, the vertical distance between the plurality of first lamps and the substrate holder is larger than the interval between the plurality of second ramps and the substrate holder.

In the above-described substrate processing apparatus, the vertical distance between the plurality of first lamps and the substrate table is equal to the interval between the plurality of second lamps and the substrate table.

In the above substrate processing apparatus, the second lower heating means may include altitude adjusting means for adjusting the altitude of the condensing lens.

In the above-described substrate processing apparatus, the height adjustment means may include a lens support for supporting the condenser lens and an elevation controller for moving the lens support vertically.

In the above-described substrate processing apparatus, a plurality of racks may be installed on the lens support base, and a plurality of unions inserted into the plurality of racks may be installed on the altitude controller.

In the above-described substrate processing apparatus, the outer side of the condenser lens is supported by the second reflector, and the inner side of the condenser lens is supported by the lens support.

In the above-described substrate processing apparatus, the angle between the substrate table and the condenser lens is adjusted from 0 to 45 degrees.

In the above-described substrate processing apparatus, the upper region and the lower region are respectively an upper dome and a lower dome.

In the above-described substrate processing apparatus, the upper region may be a dome, and the lower region may be a flat bottom.

In the above-described substrate processing apparatus, the reflector may include a channel through which the coolant may flow for cooling.

In the above-described substrate processing apparatus, the heating means may include first heating means installed in an inner region corresponding to a central portion of the chamber, the first heating means comprising a plurality of first lamps and a first reflection plate, and a light diffusion lens; And a second heating means provided in an outer region corresponding to an outer portion of the chamber and the inner region, the second heating means including a plurality of second lamps and a second reflector.

In the above substrate processing apparatus, the inner region is divided into four sub-inner regions by a vertical line, a horizontal line and a diagonal line passing through the central portion of the chamber, and the light diffusion lens has the same shape as the sub- .

In the above substrate processing apparatus, the light diffusion lens is a concave lens.

In the above-described substrate processing apparatus, the heating means may include first heating means installed in an inner region corresponding to a central portion of the chamber, the first heating means comprising a plurality of first lamps and a first reflection plate, and a light diffusion lens; And second heating means installed in an outer region corresponding to an outer region of the chamber and corresponding to the inner region, the second heating means comprising a plurality of second lamps, a second reflection plate, and a condenser lens.

The substrate processing apparatus according to the first to fourth embodiments of the present invention has the following effects.

In a substrate processing apparatus for heating a substrate platform by a heating means using a lamp as a heating device, the central portion of the substrate platform is kept in a heat accumulation state, and the outer region of the substrate platform is kept in a heat- In order to overcome the uneven distribution of the temperature, a light diffusion lens and / or a condenser lens is provided on the upper portion of the lamp corresponding to each of the central portion and / or the outer portion to disperse the heat accumulation state and compensate the heat loss state It is possible to maintain a uniform temperature distribution on the substrate bench.

The altitude control means for adjusting the altitude of the optical lens is provided so that the focusing and dispersing positions of the light can be adjusted and the temperature distribution of the substrate stand can be appropriately adjusted.

The main body constituting the lower portion of the chamber in the substrate processing apparatus is formed to have a flat bottom surface so that the heating apparatus corresponding to the central portion of the substrate bench and the heating apparatus corresponding to the outermost portion are at the same height, Can be uniformly maintained.

Hereinafter, the first to fourth preferred embodiments of the present invention will be described in detail with reference to the drawings.

1st Example

FIG. 4 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention, FIGS. 5A and 5B are detailed views of a heating apparatus according to a second embodiment of the present invention, and FIG. Fig. 7 is a plan view of a heating apparatus according to the first embodiment of the present invention. Fig.

4, a substrate processing apparatus 110 used for manufacturing a semiconductor device includes a chamber 112 for providing a reaction space, a gate valve (gate an exhaust port 118 for discharging the gas inside the chamber 112, a substrate platform 120 on which the substrate 114 is placed, an edge installed along the outer periphery of the substrate platform 120, An edge ring 130 and upper and lower heating means 122 and 128 installed at the top and bottom of the chamber 112 for heating the substrate 114.

The chamber 112 consists of an upper region and a lower region that engages the upper region. The upper region is composed of an upper dome 124 having a curved surface and the lower region is composed of a lower dome 126 having an inclination from the outer periphery of the chamber 112 to the central portion. The upper dome 124 and the lower dome 126 are made of a transparent quartz through which light can pass. A bell jar heater including an RF electrode (not shown) as an upper heating means 122 is installed at an upper portion of the chamber 112 in order to maintain the inside of the chamber 112 at a high- A lamp heater and a reflector are provided as a lower heating means 128 at a lower portion of the chamber 112.

The edge ring 130 is installed along the outer circumference of the substrate platform 120 and is interposed and fixed between the upper dome 124 and the lower dome 126. The edge ring 130 minimizes the escape of the process gas supplied to the interior of the chamber 112 by the gas supply device (not shown) between the substrate platform 120 and the lower dome 126. When the thin film is formed on the surface of the lower dome 126 by the outflow of the process gas, the light of the lamp heater located in the lower portion of the lower dome 126 can not penetrate into the chamber 112, ) May not be heated.

The substrate processing apparatus 110 is provided with a support table 132 for supporting the substrate table 114 and lifting and lowering the substrate table 114 and a drive device 134 including a cylinder and a motor for driving the support table 130 do. The support base 132 includes a central support 136 supporting the center of the substrate table 114 and a plurality of peripheral supports 138 supporting the periphery of the substrate table 114.

The lower dome 126 has an inclined surface from the outer periphery of the chamber 112 to the periphery of the supporter 132 and the lower heating means 128 is installed below the lower dome 126. The lower portion of the lower dome 126 is divided into an inner region 140 and an outer region 142 and a first lower heating apparatus 162 is provided in the inner region 140 and a second lower heating apparatus 162 are installed. The first lower heater 162 is installed on the lower and outer sides of the plurality of first lamps 144 and the plurality of first lamps 144 disposed radially in the inner region 40 about the support platform 132, And a first reflector 146 that reflects light. The second lower heating device 164 is installed on the lower and outer sides of the plurality of second lamps 148 and the plurality of second lamps 148 disposed in the outer region 164 by radiation around the support platform 132, And a second reflector 150 that reflects light.

The inner region 140 is divided into four sub-inner regions by a vertical line and a horizontal line passing through the supporter 132 to arrange the first lamp 144 and the first reflector 146 in each sub- The region 142 is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through the supporter 132, and the second lamps 148 and the second reflector 150 are disposed in the respective outer regions. The divided areas of the inner area 140 and the outer area 142 can be adjusted as needed. A plurality of first and second lamps 144 and 148 use halogen lamps emitting radiant heat. The first and second reflectors 146 and 150 are made of metal having high reflection efficiency and high corrosion resistance, for example, aluminum and stainless steel.

Since the first and second lamps 144 and 148 are disposed adjacent to and spaced apart from the lower dome 126, the substrate holder 120 and the plurality of first and second lamps 144 and 148 Are different from each other depending on the position of the substrate table 120. In the substrate processing apparatus 110 of the first embodiment of the present invention as shown in FIG. 4, the interval between the substrate pedestal 120 and the plurality of first lamps 144 is larger than the distance between the substrate pedestal 120 and the plurality of second ramps 144. [ (148). The first and second reflectors 146 and 150 may include a cooling channel (not shown) through which a coolant for cooling may flow.

4, the distance between the second lamps 148 and the edge ring 130 provided in the outer region 142 is about 180 mm, and the number of the second lamps 148 is about 180 mm. And the substrate table 120 is about 270 mm. As shown in Figs. 2-3 and Table 1 of the related art, the central portion of the substrate platform 120 is in a state where heat accumulation is continued, and the outer frame portion of the substrate platform 120 and the edge ring 130 are heat- This is a persistent state. Accordingly, in the substrate processing apparatus 110 according to the first embodiment of the present invention, in order to compensate for the heat loss of the substrate pedestal 120 and the edge ring 130, each of the plurality of second ramps 148 A condenser lens 160 is provided as an optical lens on an upper portion of the condenser lens 160. The condenser lens 160 uses a quartz convex lens having heat resistance. The outgoing light of the plurality of second lamps 148 is refracted while passing through the condenser lens 160 and concentrated at the outer frame of the substrate bench 120 and at the edge ring 130.

The condensing lens 160 aligns the point where the light emitted from the second lamp 148 is focused so as to be positioned on the outer edge of the substrate stand 120 and the edge ring 130. The condenser lens 160 can minimize the loss of light emitted from the plurality of second lamps 148 and concentrate on the outer frame portion of the substrate carrying platform 120 and the edge ring 130. Therefore, 120 can be compensated for.

5A and 5B are sectional views of a second lower heating apparatus 164 provided with a condenser lens 160. Fig. The second lower heating apparatus 164 includes a second lamp 148, a second reflector 150 for reflecting the light emitted from the second lamp 148, a condenser lens 160, and an altitude control means 166 of the condenser lens 160. The altitude control means 166 comprises a lens support 168 for supporting the condenser lens 160 and an altitude controller 170 for moving the lens support 168 up and down. As shown in FIG. 6, a plurality of serrated racks 172 are formed on one side of the lens support 168, and a plurality of racks 172 are inserted into the ends of the height adjuster 170 A plurality of unions 174 such as protrusions capable of moving the lens support 168 up and down are provided.

The height adjuster 170 is formed of a cylindrical bar and has a plurality of unions 174 provided at the ends of the second reflector 150 through the side surfaces of the second reflector 150, Lt; / RTI > Therefore, by rotating the height adjuster 170, the angle of the condenser lens 160 can be adjusted while moving the lens support 168 to the upper or lower position. As shown in FIG. 7, the condenser lens 160 is installed in each of the sub-outer regions divided into eight, and one condenser lens 160 has a size capable of covering one sub-outer region. In general, the condenser lens 160 is formed in the same shape as one sub-outer region and covers the entire outer region by eight condenser lenses 160. Each of the condenser lenses 160 is provided with independent altitude control means 166, so that independent angle adjustment is possible.

The inner side of the condenser lens 160 is supported by the lens support frame 168 so that the inner side of the condenser lens 160 is supported by the lens support frame 168. [ do. The inside of the condenser lens 160 and the stationary stand 168 are coupled with fluidity enough to adjust the angle. The angle of the condenser lens 160 is changed by the altitude control means 166, and the position where the light is focused changes. Therefore, it is possible to intensively raise the temperature at a portion where heat loss occurs in the substrate table 120. Further, the condenser lens 160 is provided so as to be detachable, and the substrate processing process can be carried out by attaching or removing the condenser lens 160 as required.

5A is a state in which the angle of the condenser lens 166 is not adjusted and FIG. 5B shows a state in which the light emitted from the second lamp 148 is condensed by the condenser lens 120 and the edge ring 130 166 are adjusted. In the present invention, the angle adjustment range of the condenser lens 166 is about 0 to 45 degrees based on the angle between the substrate holder 120 and the condenser lens 166. [ When the angle of the condenser lens 166 is 0, the height of the condenser lens 166 is not adjusted as shown in FIG. 5A, so that the condenser lens 166 and the substrate holder 120 are in parallel, 166 is adjusted, the condenser lens 166 is inclined to the inside of the chamber 112 as shown in FIG. 5B.

Second Example

FIG. 8 is a schematic view of a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 9 is a plan view of a heating apparatus according to a second embodiment of the present invention.

The second embodiment of the present invention is different from the first embodiment in that a light diffusing lens for dispersing light emitted from a lamp is provided so as to prevent heat accumulation in the central region of the substrate stand, There is a difference. In the second embodiment of the present invention, the same reference numerals are used for the same components as in the first embodiment.

8, a substrate processing apparatus 110 used for manufacturing a semiconductor device includes a chamber 112 for providing a reaction space, a chamber 112 A gate valve 116 installed on the side of the substrate 114 for discharging the substrate 114 and an outlet 118 for discharging the gas inside the chamber 112, a substrate table 120 on which the substrate 114 is placed, An edge ring 130 installed along the outer periphery of the substrate table 120 and upper and lower heating means installed at upper and lower portions of the chamber 112 for heating the substrate 114 122, and 128, respectively.

The chamber 112 consists of an upper region and a lower region that engages the upper region. The upper region is composed of an upper dome 124 having a curved surface and the lower region is composed of a lower dome 126 having an inclination from the outer periphery of the chamber 112 to the central portion. The substrate processing apparatus 110 is provided with a support table 132 for supporting the substrate table 114 and lifting and lowering the substrate table 114 and a drive device 134 including a cylinder and a motor for driving the support table 130 do. The support base 132 includes a central support 136 supporting the center of the substrate table 114 and a plurality of peripheral supports 138 supporting the periphery of the substrate table 114.

The lower dome 126 has an inclined surface from the outer periphery of the chamber 112 to the periphery of the supporter 132 and the lower heating means 128 is installed below the lower dome 126. The lower portion of the lower dome 126 is divided into an inner region 140 and an outer region 142 and a first lower heating apparatus 162 is provided in the inner region 140 and a second lower heating apparatus 162 are installed. The first lower heater 162 is installed on the lower and outer sides of the first lamps 144 and a plurality of the first lamps 144 disposed in the inner region 140 with radiation around the support 132, And a first reflector 146 that reflects light. The second lower heating apparatus 164 is installed on the lower and outer sides of the plurality of second lamps 148 and the plurality of second lamps 148 disposed in the outer region 142 by radiation around the support base 132, And a second reflector 150 that reflects light.

The inner region 140 is divided into four sub-inner regions by a vertical line and a horizontal line passing through the supporter 132 to arrange the first lamp 144 and the first reflector 146 in each sub- The region 142 is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through the support member 132, and the second lamp 148 and the second reflector 150 are disposed in the respective outer regions. The number of the divided areas of the inner area 140 and the outer area 142 can be added or subtracted as needed.

8, the interval between the plurality of second lamps 148 provided in the outer region 142 and the edge ring 130 is about 180 mm, and the number of the second lamps 148 is about 180 mm. And the substrate table 120 is about 270 mm. As shown in Figs. 2-3 and Table 1 of the prior art, the central portion of the substrate table 120 continues to accumulate heat, and the outer circumferential portion of the substrate table 120 and the edge ring 130 have a constant heat loss . Therefore, in the substrate processing apparatus 110 according to the second embodiment of the present invention, in order to disperse the heat accumulation in the central region of the substrate stand 120, A light diffusing lens 190 is provided as a lens. The light diffusion lens 190 uses a quartz concave lens having heat resistance. The outgoing light of the plurality of first lamps 144 is refracted while passing through the light diffusing lens 190 and diffused to the outer frame portion of the substrate stand 120 in comparison with the case where the light diffusing lens 190 is not provided .

The light diffusing lens 190 aligns the region for diffusing the light emitted from the first lamp 144 so as to include a large portion of the outer periphery of the substrate stand 120 if possible. Since the light emitted from the plurality of first lamps 144 can be diffused to the peripheral portion without being concentrated in the central region of the substrate pedestal 120 by the light diffusion lens 190, It is possible to compensate for the temperature difference between the central portion and the outer peripheral portion. The elevation control device of the light diffusion lens 190 used in the second embodiment of the present invention uses the same configuration as that of the first embodiment.

9, the condenser lens 160 according to the second embodiment of the present invention is installed in each of sub-inner regions divided into four, and one light diffusion lens 190 has a size capable of covering one sub- . Roughly, the light diffusion lens 190 is formed in the same shape as one sub-inner region, and the four light diffusion lenses 190 cover the entire inner region. Each of the light diffusing lenses 190 is provided with an independent altitude control means 166 as in the first embodiment of the present invention so that independent angle adjustment is possible. Further, the light diffusion lens 190 is provided so as to be detachable, and the substrate processing step can be carried out by attaching or removing it, if necessary.

Third Example

FIG. 10 is a schematic view of a substrate processing apparatus according to a third embodiment of the present invention, and FIG. 11 is a plan view of a heating apparatus according to a third embodiment of the present invention.

A third embodiment of the present invention provides a condenser lens for condensing light emitted from a lamp so as to compensate heat loss on a lamp for heating an outer region of a substrate bench band, And a temperature distribution of the substrate stand is made uniform. In the third embodiment of the present invention, the same reference numerals are used for the same components as in the first and second embodiments.

10, a substrate processing apparatus 110 used for manufacturing a semiconductor device includes a chamber 112 for providing a reaction space, a chamber 112, A gate valve 116 installed on the side of the substrate 114 for discharging the substrate 114 and a discharge port 118 for discharging the gas inside the chamber 112, a substrate table 120 on which the substrate 114 is placed, An edge ring 130 installed along the outer periphery of the substrate mounting table 120 and upper and lower heating means 122 for heating the substrate 114 , 128).

The chamber 112 consists of an upper region and a lower region that engages the upper region. The upper region is composed of an upper dome 124 having a curved surface and the lower region is composed of a lower dome 126 having an inclination from the outer periphery of the chamber 112 to the central portion. The substrate processing apparatus 110 is provided with a support table 132 for supporting the substrate table 114 and lifting and lowering the substrate table 114 and a drive device 134 including a cylinder and a motor for driving the support table 130 do. The support base 132 includes a central support 136 supporting the center of the substrate table 114 and a plurality of peripheral supports 138 supporting the periphery of the substrate table 114.

The lower dome 126 has an inclined surface from the outer periphery of the chamber 112 to the periphery of the supporter 132 and the lower heating means 128 is installed below the lower dome 126. The lower portion of the lower dome 126 is divided into an inner region 140 and an outer region 142 and a first lower heating apparatus 162 is provided in the inner region 140 and a second lower heating apparatus 162 are installed. The first lower heater 162 is installed on the lower and outer sides of the first lamps 144 and a plurality of the first lamps 144 disposed in the inner region 140 with radiation around the support 132, And a first reflector 146 that reflects light. The second lower heating device 164 is installed on the lower and outer sides of the plurality of second lamps 148 and the plurality of second lamps 148 disposed in the outer region 164 by radiation around the support platform 132, And a second reflector 150 that reflects light.

The inner region 140 is divided into four sub-inner regions by vertical lines and horizontal lines passing through the supports 132, and the first lamp 144 and the first reflector 146 are disposed in each sub- The outer region 142 is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through the supporter 132, and the second lamp 148 and the second reflector 150 are disposed in the respective outer regions. The number of the divided areas of the inner area 140 and the outer area 142 can be added or subtracted as needed.

10, the interval between the second lamps 148 and the edge ring 130 provided in the outer region 142 is about 180 mm, and the number of the second lamps 148 is about 180 mm. And the substrate table 120 is about 270 mm. As shown in Figs. 2-3 and Table 1 of the prior art, the central portion of the substrate table 120 continues to accumulate heat, and the outer circumferential portion of the substrate table 120 and the edge ring 130 have a constant heat loss . Therefore, in the substrate processing apparatus 110 according to the third embodiment of the present invention, in order to disperse the heat accumulation in the central region of the substrate stand 120, A light diffusing lens 190 is provided as a lens to compensate for the heat loss of the edge ring 130 and the outer peripheral region of the substrate pedestal 120. In the upper part of each of the plurality of second lamps 148, A condenser lens 160 is installed.

The condenser lens 160 and the light diffusing lens 190 each use a quartz convex lens and a concave lens having heat resistance. The outgoing light of the plurality of first lamps 144 is refracted while passing through the light diffusing lens 190 and diffused to the outer frame portion of the substrate stand 120 in comparison with the case where the light diffusing lens 190 is not provided . The outgoing light of the plurality of second lamps 148 is refracted while passing through the light collecting lens 160 and concentrated at the outer frame of the substrate carrying platform 120 and the edge ring 130. The light diffusing lens 190 aligns the region for diffusing the light emitted from the first lamp 144 so as to include a large portion of the outer periphery of the substrate stand 120 if possible.

The light emitted from the plurality of first lamps 144 can be diffused to the peripheral portion without being concentrated in the central region of the substrate bench 120 by the light diffusing lens 190, Since the light emitted from the plurality of second lamps 148 is concentrated on the outer peripheral region of the substrate pedestal 120, the central portion and the outer peripheral portion of the substrate pedestal 120 can maintain a uniform temperature distribution. The height control device of the condenser lens 160 and the light diffusion lens 190 uses the same configuration as that of the first embodiment.

As shown in FIG. 11, the optical diffusion lens 190 of the third embodiment of the present invention is installed in each of four divided sub-areas, and one optical diffusion lens 190 covers one sub- It has a size. Roughly, the light diffusion lens 190 is formed in the same shape as one sub-inner region, and the four light diffusion lenses 190 cover the entire inner region. The condenser lens 160 is installed in each of the sub-outer regions divided into eight, and one condenser lens 160 is sized to cover one sub-outer region. Roughly, the condenser lens 160 is formed in the same shape as one sub-outer region, and the eight condenser lenses 160 cover the entire outer region. Independent altitude control means 166 are provided in each of the condenser lens 160 and the light diffusing lens 190 to independently adjust the angle. Further, the condenser lens 160 and the light diffusion lens 190 are provided so as to be detachable, and the substrate processing process can be carried out by attaching or removing the condenser lens 160 and the light diffusion lens 190 as necessary.

Fourth Example

12 is a schematic view of a substrate processing apparatus according to a fourth embodiment of the present invention.

The fourth embodiment of the present invention differs from the first to third embodiments in that the lower portion of the chamber 112 is formed in a flat shape without using a lower dome 126 having a slope. 12, when the lower portion of the chamber 112 is formed in a plane, the deviation of the distance between the lamp and the substrate stand for use in the lower heating apparatus is not larger than that of the substrate processing apparatuses of the first to third embodiments, The temperature can be kept uniform. In the fourth embodiment of the present invention, the same reference numerals are used for the same components as those in the first to third embodiments.

12, a substrate processing apparatus 110 used for manufacturing a semiconductor device includes a chamber 112 for providing a reaction space, a gate valve (gate an exhaust port 118 for discharging the gas inside the chamber 112, a substrate table 120 on which the substrate 114 is placed, an edge ring 120 installed along the outer circumference of the substrate table 120, an edge ring 130 and upper and lower heating means 122 and 128 installed at upper and lower portions of the chamber 112 for heating the substrate plate 114.

The chamber 112 consists of an upper region and a lower region that engages the upper region. The upper region is composed of a curved upper dome 172 and the lower region is a body 174 having a flat bottom and the dome 172 and the body 174 are made of a transparent material It is made of quartz. A bell jar heater including an RF electrode (not shown) as an upper heating means 122 is installed at an upper portion of the chamber 112 in order to maintain the inside of the chamber 112 at a high- A lamp heater and a reflector are provided as a lower heating means 128 at a lower portion of the chamber 112.

The main body 174 has a flat bottom surface and the lower portion of the main body 174 is divided into an inner region 140 and an outer region 142 to provide a lower heating means 128. The lower portion of the main body 174 is divided into an inner region 140 and an outer region 142 and the first lower heating apparatus 162 is provided in the inner region 140 and the second lower heating apparatus 164 Is installed. The first lower heater 162 is installed on the lower and outer sides of the plurality of first lamps 144 and the plurality of first lamps 144 disposed radially in the inner region 40 about the support platform 132, And a first reflector 146 that reflects light. The second lower heating device 164 is installed on the lower and outer sides of the plurality of second lamps 148 and the plurality of second lamps 148 disposed in the outer region 164 by radiation around the support platform 132, And a second reflector 150 that reflects light.

Since the first and second lower heating apparatuses 162 and 164 are located at the same height since the main body 174 has a flat bottom surface, the distance between the substrate pedestal 120 and the plurality of first lamps 144, The vertical spacing between the pedestal 120 and the plurality of second ramps 148 is the same.

The inner region 140 is divided into four sub-inner regions by a vertical line and a horizontal line passing through the supporter 132 to arrange the first lamp 144 and the first reflector 146 in each sub- The region 142 is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through the support member 132, and the second lamp 148 and the second reflector 150 are disposed in the respective outer regions. The number of the divided areas of the inner area 140 and the outer area 142 can be added or subtracted as needed.

As shown in Figs. 2-3 and Table 1 of the prior art, the central portion of the substrate table 120 is in a thermal storage state, and the outer circumference of the substrate table 120 and the edge ring 130 are in a state to be. Therefore, in the substrate processing apparatus 110 according to the fourth embodiment of the present invention, in order to compensate for the heat loss of the substrate pedestal 120 and the edge ring 130, each of the plurality of second ramps 148 And a condenser lens 160 is provided as an optical lens on the upper side to compensate for heat loss. 12, a light diffusion lens may be provided on each of the plurality of first lamps 144 to disperse heat accumulation in the central region of the substrate pedestal 120. [

The plurality of first lamps 144 and the plurality of second lamps 148 can maintain the same height so that the first and second lower heating devices 162 and 164 can be maintained at the same height, So that the temperature of the substrate carrying platform 120 can be maintained more uniform than that of the substrate processing apparatuses of the first to third embodiments.

1 is a schematic view of a substrate processing apparatus according to the prior art;

FIG. 2 is a view showing a layout of a lamp and an object for temperature measurement according to the related art

Fig. 3 is a graph showing the temperature measurement result of Fig. 2

4 is a schematic view of a substrate processing apparatus according to the first embodiment of the present invention

5A and 5B are detailed views of a heating apparatus according to a second embodiment of the present invention

6 is a detailed view of the lens adjusting means according to the first embodiment of the present invention

7 is a plan view of the heating apparatus according to the first embodiment of the present invention

8 is a schematic view of a substrate processing apparatus according to a second embodiment of the present invention

9 is a plan view of the heating apparatus according to the second embodiment of the present invention

10 is a schematic view of a substrate processing apparatus according to a third embodiment of the present invention

11 is a plan view of the heating apparatus according to the third embodiment of the present invention

12 is a schematic view of a substrate processing apparatus according to a fourth embodiment of the present invention

Claims (18)

A chamber providing a reaction space; A substrate table placed in the reaction space and on which the substrate is placed; And a heating unit located at a lower portion of the chamber and including a lamp, a reflector reflecting the light emitted from the lamp, and an optical lens positioned on the lamp, for heating the substrate table, The heating means includes a first heating means installed in an inner region corresponding to a central portion of the chamber and composed of a plurality of first lamps and a first reflector, And a second heating means, which is installed in the second housing and is composed of a plurality of second lamps, a second reflecting plate, and a condensing lens, The second heating means includes altitude adjusting means for adjusting the altitude of the condensing lens, Wherein the height adjustment means includes a lens support for supporting the condenser lens and an elevation controller for moving the lens support vertically. delete The method according to claim 1, Wherein the outer region is divided into eight sub-outer regions by a vertical line, a horizontal line and a diagonal line passing through a center portion of the chamber, and the focusing lens has the same shape as the sub-outer region. The method according to claim 1, Wherein the condensing lens is a convex lens. delete delete delete delete The method according to claim 1, Wherein the lens support is provided with a plurality of racks, and the height adjuster is provided with a plurality of unions inserted into the plurality of racks. The method according to claim 1, Wherein an outer side of the condenser lens is supported by the second reflector, and an inner side of the condenser lens is supported by the lens support. The method according to claim 1, And an angle between the substrate table and the condenser lens is adjusted from 0 to 45 degrees. delete delete delete A chamber providing a reaction space; A substrate table placed in the reaction space and on which the substrate is placed; A first heating means installed in an inner region corresponding to a central portion of the chamber and composed of a plurality of first lamps, a first reflection plate, and a light diffusion lens; And a second heating means which is installed in the lower portion of the chamber and is composed of a plurality of second lamps, a second reflecting plate, and a condenser lens, And the substrate processing apparatus further comprises: 16. The method of claim 15, Wherein the inner region is divided into four sub-inner regions by a vertical line, a horizontal line and a diagonal line passing through the central portion of the chamber, and the light diffusion lens has the same shape as the sub-inner region. 16. The method of claim 15, Wherein the light diffusion lens is a concave lens. delete

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