JPS61255027A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS61255027A
JPS61255027A JP60096326A JP9632685A JPS61255027A JP S61255027 A JPS61255027 A JP S61255027A JP 60096326 A JP60096326 A JP 60096326A JP 9632685 A JP9632685 A JP 9632685A JP S61255027 A JPS61255027 A JP S61255027A
Authority
JP
Japan
Prior art keywords
gas
etching
dry etching
etching method
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60096326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467777B2 (OSRAM
Inventor
Keiji Horioka
啓治 堀岡
Haruo Okano
晴雄 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60096326A priority Critical patent/JPS61255027A/ja
Publication of JPS61255027A publication Critical patent/JPS61255027A/ja
Publication of JPH0467777B2 publication Critical patent/JPH0467777B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP60096326A 1985-05-07 1985-05-07 ドライエツチング方法 Granted JPS61255027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60096326A JPS61255027A (ja) 1985-05-07 1985-05-07 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60096326A JPS61255027A (ja) 1985-05-07 1985-05-07 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS61255027A true JPS61255027A (ja) 1986-11-12
JPH0467777B2 JPH0467777B2 (OSRAM) 1992-10-29

Family

ID=14161881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60096326A Granted JPS61255027A (ja) 1985-05-07 1985-05-07 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS61255027A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237530A (ja) * 1987-03-26 1988-10-04 Toshiba Corp ドライエツチング方法
JPS6489519A (en) * 1987-09-30 1989-04-04 Toshiba Corp Dry etching
JPH0344030A (ja) * 1989-06-30 1991-02-25 American Teleph & Telegr Co <Att> 半導体デバイスの製作方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
JP2008198996A (ja) * 2007-01-11 2008-08-28 Tokyo Electron Ltd 微小特徴部位において欠陥を減少させたシリコン又はシリコンゲルマニウムの堆積

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154834A (en) * 1981-03-20 1982-09-24 Toshiba Corp Etching method by reactive ion
JPS5846637A (ja) * 1981-09-14 1983-03-18 Toshiba Corp 反応性イオンエツチング方法
JPS58201362A (ja) * 1982-05-20 1983-11-24 Toshiba Corp 半導体装置の製造方法
JPS5922374A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 緑色発光ダイオ−ドの製造方法
JPS5967635A (ja) * 1982-07-06 1984-04-17 テキサス・インスツルメンツ・インコ−ポレイテツド シリコンの異方性エツチングの為のプラズマエツチング用化学組成

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154834A (en) * 1981-03-20 1982-09-24 Toshiba Corp Etching method by reactive ion
JPS5846637A (ja) * 1981-09-14 1983-03-18 Toshiba Corp 反応性イオンエツチング方法
JPS58201362A (ja) * 1982-05-20 1983-11-24 Toshiba Corp 半導体装置の製造方法
JPS5967635A (ja) * 1982-07-06 1984-04-17 テキサス・インスツルメンツ・インコ−ポレイテツド シリコンの異方性エツチングの為のプラズマエツチング用化学組成
JPS5922374A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd 緑色発光ダイオ−ドの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237530A (ja) * 1987-03-26 1988-10-04 Toshiba Corp ドライエツチング方法
JPS6489519A (en) * 1987-09-30 1989-04-04 Toshiba Corp Dry etching
JPH0344030A (ja) * 1989-06-30 1991-02-25 American Teleph & Telegr Co <Att> 半導体デバイスの製作方法
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
JP2008198996A (ja) * 2007-01-11 2008-08-28 Tokyo Electron Ltd 微小特徴部位において欠陥を減少させたシリコン又はシリコンゲルマニウムの堆積

Also Published As

Publication number Publication date
JPH0467777B2 (OSRAM) 1992-10-29

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