JPS61253822A - 化合物半導体薄膜の製造装置 - Google Patents

化合物半導体薄膜の製造装置

Info

Publication number
JPS61253822A
JPS61253822A JP60095587A JP9558785A JPS61253822A JP S61253822 A JPS61253822 A JP S61253822A JP 60095587 A JP60095587 A JP 60095587A JP 9558785 A JP9558785 A JP 9558785A JP S61253822 A JPS61253822 A JP S61253822A
Authority
JP
Japan
Prior art keywords
gas
gas ejection
plate
compound semiconductor
ejection plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60095587A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039609B2 (OSRAM
Inventor
Yasuhiro Ishii
康博 石井
Yoshimoto Fujita
藤田　良基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60095587A priority Critical patent/JPS61253822A/ja
Publication of JPS61253822A publication Critical patent/JPS61253822A/ja
Publication of JPH039609B2 publication Critical patent/JPH039609B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3418—
    • H10P14/24—
    • H10P14/3421—
JP60095587A 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置 Granted JPS61253822A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60095587A JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60095587A JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Publications (2)

Publication Number Publication Date
JPS61253822A true JPS61253822A (ja) 1986-11-11
JPH039609B2 JPH039609B2 (OSRAM) 1991-02-08

Family

ID=14141712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60095587A Granted JPS61253822A (ja) 1985-05-07 1985-05-07 化合物半導体薄膜の製造装置

Country Status (1)

Country Link
JP (1) JPS61253822A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275686A (en) * 1991-09-25 1994-01-04 University Of New Mexico Radial epitaxial reactor for multiple wafer growth
JP2022547508A (ja) * 2019-09-09 2022-11-14 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
US11959169B2 (en) 2019-01-30 2024-04-16 Applied Materials, Inc. Asymmetric injection for better wafer uniformity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275686A (en) * 1991-09-25 1994-01-04 University Of New Mexico Radial epitaxial reactor for multiple wafer growth
US11959169B2 (en) 2019-01-30 2024-04-16 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
JP2022547508A (ja) * 2019-09-09 2022-11-14 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
US12139790B2 (en) 2019-09-09 2024-11-12 Applied Materials, Inc. Processing system and method of delivering a reactant gas

Also Published As

Publication number Publication date
JPH039609B2 (OSRAM) 1991-02-08

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