JPS61247700A - ３−５族化合物半導体の製造方法 - Google Patents
３−５族化合物半導体の製造方法Info
- Publication number
- JPS61247700A JPS61247700A JP8930785A JP8930785A JPS61247700A JP S61247700 A JPS61247700 A JP S61247700A JP 8930785 A JP8930785 A JP 8930785A JP 8930785 A JP8930785 A JP 8930785A JP S61247700 A JPS61247700 A JP S61247700A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gaas
- crystal
- iii
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 44
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910021478 group 5 element Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 230000005693 optoelectronics Effects 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 235000018453 Curcuma amada Nutrition 0.000 description 1
- 241001512940 Curcuma amada Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8930785A JPS61247700A (ja) | 1985-04-25 | 1985-04-25 | ３−５族化合物半導体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8930785A JPS61247700A (ja) | 1985-04-25 | 1985-04-25 | ３−５族化合物半導体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61247700A true JPS61247700A (ja) | 1986-11-04 |
| JPH042559B2 JPH042559B2 (enrdf_load_stackoverflow) | 1992-01-20 |
Family
ID=13967005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8930785A Granted JPS61247700A (ja) | 1985-04-25 | 1985-04-25 | ３−５族化合物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61247700A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02229797A (ja) * | 1989-03-02 | 1990-09-12 | Hitachi Cable Ltd | 低転位密度ガリウム砒素単結晶の製造方法 |
| JP2022008146A (ja) * | 2020-06-12 | 2022-01-13 | Ｄｏｗａエレクトロニクス株式会社 | ＧａＡｓインゴットおよびＧａＡｓインゴットの製造方法、ならびにＧａＡｓウエハ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895699A (ja) * | 1981-12-03 | 1983-06-07 | Nec Corp | Ｇａａｓ単結晶の育成方法 |
| JPS59131598A (ja) * | 1983-01-18 | 1984-07-28 | Sumitomo Electric Ind Ltd | ＧａＡｓ単結晶の製造方法 |
-
1985
- 1985-04-25 JP JP8930785A patent/JPS61247700A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5895699A (ja) * | 1981-12-03 | 1983-06-07 | Nec Corp | Ｇａａｓ単結晶の育成方法 |
| JPS59131598A (ja) * | 1983-01-18 | 1984-07-28 | Sumitomo Electric Ind Ltd | ＧａＡｓ単結晶の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02229797A (ja) * | 1989-03-02 | 1990-09-12 | Hitachi Cable Ltd | 低転位密度ガリウム砒素単結晶の製造方法 |
| JP2022008146A (ja) * | 2020-06-12 | 2022-01-13 | Ｄｏｗａエレクトロニクス株式会社 | ＧａＡｓインゴットおよびＧａＡｓインゴットの製造方法、ならびにＧａＡｓウエハ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH042559B2 (enrdf_load_stackoverflow) | 1992-01-20 |
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