JPS61243000A - 炭化珪素単結晶基板の製造方法 - Google Patents

炭化珪素単結晶基板の製造方法

Info

Publication number
JPS61243000A
JPS61243000A JP60084237A JP8423785A JPS61243000A JP S61243000 A JPS61243000 A JP S61243000A JP 60084237 A JP60084237 A JP 60084237A JP 8423785 A JP8423785 A JP 8423785A JP S61243000 A JPS61243000 A JP S61243000A
Authority
JP
Japan
Prior art keywords
silicon carbide
single crystal
type silicon
substrate
carbide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60084237A
Other languages
English (en)
Japanese (ja)
Inventor
Mitsuhiro Shigeta
光浩 繁田
Akira Suzuki
彰 鈴木
Masaki Furukawa
勝紀 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60084237A priority Critical patent/JPS61243000A/ja
Priority to DE19863613012 priority patent/DE3613012A1/de
Publication of JPS61243000A publication Critical patent/JPS61243000A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60084237A 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法 Pending JPS61243000A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60084237A JPS61243000A (ja) 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法
DE19863613012 DE3613012A1 (de) 1985-04-18 1986-04-17 Verfahren zur herstellung eines sic-einkristall-substrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084237A JPS61243000A (ja) 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法

Publications (1)

Publication Number Publication Date
JPS61243000A true JPS61243000A (ja) 1986-10-29

Family

ID=13824861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60084237A Pending JPS61243000A (ja) 1985-04-18 1985-04-18 炭化珪素単結晶基板の製造方法

Country Status (2)

Country Link
JP (1) JPS61243000A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3613012A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
CN103628140A (zh) * 2013-10-09 2014-03-12 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3915053C2 (de) * 1989-05-08 1995-03-30 Siemens Ag Verfahren zum Herstellen von einkristallinem Siliziumkarbid SiC
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
DE4109005C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
JP6488607B2 (ja) * 2014-09-22 2019-03-27 株式会社Sumco 単結晶ＳｉＣウェーハの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS60145992A (ja) * 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
CN103628140A (zh) * 2013-10-09 2014-03-12 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构

Also Published As

Publication number Publication date
DE3613012C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-10
DE3613012A1 (de) 1986-11-06

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