JPS61234084A - Magnetoresistance element - Google Patents

Magnetoresistance element

Info

Publication number
JPS61234084A
JPS61234084A JP60075157A JP7515785A JPS61234084A JP S61234084 A JPS61234084 A JP S61234084A JP 60075157 A JP60075157 A JP 60075157A JP 7515785 A JP7515785 A JP 7515785A JP S61234084 A JPS61234084 A JP S61234084A
Authority
JP
Japan
Prior art keywords
piece
short
long
pieces
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60075157A
Other languages
Japanese (ja)
Inventor
Yukihisa Shikita
敷田 幸久
Isao Mizowaki
溝脇 功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aichi Tokei Denki Co Ltd
Original Assignee
Aichi Tokei Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aichi Tokei Denki Co Ltd filed Critical Aichi Tokei Denki Co Ltd
Priority to JP60075157A priority Critical patent/JPS61234084A/en
Publication of JPS61234084A publication Critical patent/JPS61234084A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices

Abstract

PURPOSE:To improve the sensitivity of an element by devising the disposition and the shape of a short piece for a long piece in which main magnetoresistance variation occurs thereby cancelling the resistance variation in the short piece relatively by itself. CONSTITUTION:Angles A-D between long and short pieces are all set to 135 deg., and short pieces 14, 15 are bent at the intermediate at 90 deg.. Accordingly, when the direction of a magnetic field B with respect to the long piece forms theta, 14-1 of the half of the piece 14 forms an angle of theta+45 deg., and 14-2 of the other half forms an angle of theta+135 deg.. The magnetoresistance change of the short piece itself is cancelled by both side portions 14-1 and 14-2 bent at 90 deg..

Description

【発明の詳細な説明】 イ6発明の目的 イー1.産業上の利用分野 この発明は強磁性体の異方性磁気抵抗効果を利用した磁
気抵抗素子に関する。
[Detailed Description of the Invention] A.6 Purpose of the Invention E.1. INDUSTRIAL APPLICATION FIELD This invention relates to a magnetoresistive element that utilizes the anisotropic magnetoresistive effect of a ferromagnetic material.

イー2.従来技術 磁気抵抗素子は、平な絶縁性基板上に強磁性体の薄膜を
真空蒸着法やスパッタ法により蒸着し、これをホトリソ
グラフィー、エツチングにより抵抗体パターンに形成し
、更に、抵抗体パターンを形成するのと同様の方法で電
極を形成したものである。 この磁気抵抗素子は素子に
か\る磁界の方向に応じてその電気抵抗が変化するため
、磁石の回転や移動等、物理量の計測に利用されている
E2. Conventional magnetoresistive elements are produced by depositing a thin film of ferromagnetic material on a flat insulating substrate by vacuum evaporation or sputtering, forming a resistor pattern by photolithography and etching, and then forming a resistor pattern. The electrodes were formed in the same manner as the electrodes were formed. Since the electrical resistance of this magnetoresistive element changes depending on the direction of the magnetic field applied to the element, it is used to measure physical quantities such as the rotation and movement of a magnet.

強磁性抵抗効果は、Ni、Co 、Fe又はこれらの合
金など磁気抵抗効果を有する強磁性体薄膜(11に第4
図に示すように電流(1)を流し、薄膜の面内に磁気抵
抗効果が充分に飽和する大きな磁界(B)を電流(i)
と角度θをなすようにかけると、強磁性体の抵抗値Rが
θに応じて変化する現象である。 角度θが45のとき
の抵抗値をRo、磁界の回転により生じる抵抗変化分を
ΔRとすると、抵抗Rは次の(1)式で示される。
The ferromagnetic resistance effect is produced by using a ferromagnetic thin film (with a fourth
As shown in the figure, a current (1) is applied, and a large magnetic field (B) that sufficiently saturates the magnetoresistive effect is applied in the plane of the thin film to the current (i).
This is a phenomenon in which the resistance value R of a ferromagnetic material changes according to θ when the angle θ is applied to the ferromagnetic material. When the resistance value when the angle θ is 45 is Ro, and the resistance change caused by the rotation of the magnetic field is ΔR, the resistance R is expressed by the following equation (1).

R=Ro +’AΔRcos 2θ −−・−(1)磁
界CB)の方向、即ち角度θと抵抗Rのこの関係は第5
図に示すように、180毎に繰返す波形で、電流(i)
や磁界(B)が逆向きになっても抵抗値Rは同じ値とな
る。
R=Ro +'AΔRcos 2θ −−・−(1) Magnetic field CB) direction, that is, this relationship between angle θ and resistance R is the fifth
As shown in the figure, the current (i) is a waveform that repeats every 180
Even if the direction of the magnetic field (B) is reversed, the resistance value R remains the same.

実用的な磁気抵抗素子は、素子の抵抗値を大きくするた
めに、平行に配列した多数の長片と、これらの長片を直
列に接続する多数の短片とでジグザク状(折返し状)の
抵抗体パターンを形成していて、特開昭50−2898
9や特開昭54−148577号公報に開示されている
。 このジグザク状抵抗体パターンの一部を第6図に示
すが、長片(2)と短片(3+ (4)とは直角に配置
され、短片(3)と(4)は平行である。 抵抗値がR
の長片(2)と、抵抗値がrの短片(3)が夫々n個接
続されて素子が形成されていると、素子の全抵抗値はn
(R+r)となる。
In order to increase the resistance value of the element, a practical magnetoresistive element has a zigzag-like (folded) resistance structure consisting of a large number of long pieces arranged in parallel and a number of short pieces that connect these long pieces in series. It forms a body pattern, and is published in Japanese Patent Application Laid-Open No. 50-2898.
9 and Japanese Unexamined Patent Publication No. 148577/1983. A part of this zigzag resistor pattern is shown in FIG. 6, where the long piece (2) and the short piece (3+ (4)) are arranged at right angles, and the short pieces (3) and (4) are parallel. The value is R
When an element is formed by connecting n long pieces (2) and short pieces (3) with a resistance value r, the total resistance value of the element is n
(R+r).

長片の抵抗値Rは R=Ro+%ΔRcos 2θ で、短片の抵抗値rは r = ro  +%Δrcos 2 (θ+90)で
あるから、 R+r=Ro +r、  +’A (ΔR−Δr)co
s2θ・・・・(2) となり、この素子の磁気抵抗変化の割合は(ΔR−Δr
) / (Ro + r、 )で、第4図に示す材料自
体のもつ磁気抵抗変化の割合ΔR/Rより小さくなる。
The resistance value R of the long piece is R=Ro+%ΔRcos 2θ, and the resistance value r of the short piece is r=ro+%Δrcos2(θ+90), so R+r=Ro +r, +'A (ΔR−Δr)co
s2θ...(2) The rate of change in magnetoresistance of this element is (ΔR-Δr
) / (Ro + r, ), which is smaller than the rate of magnetoresistance change ΔR/R of the material itself shown in FIG.

 そして、小さくなる原因は短片が長片にと直角に配置
されているため、磁界の方向θに応じて、長片の抵抗変
化を減殺する方向に短片の抵抗値が変化するからである
The reason for the decrease is that the short pieces are arranged at right angles to the long pieces, so that the resistance value of the short pieces changes in a direction that reduces the resistance change of the long pieces, depending on the direction θ of the magnetic field.

上記従来技術は長片と短片が直角であるが、米国特許3
405355号明細書には、長片と45又は135°の
角度に配置された短片とでジグザク状の抵抗体パターン
を構成する磁気抵抗素子が示されている。 このものは
すべての短片が平行であるため、やはり、短片の抵抗変
化分が長片の抵抗変化を減殺し、材料自体のもつ感度よ
りも感度が小さくなる。
In the above conventional technology, the long piece and the short piece are at right angles, but US Pat.
No. 405,355 discloses a magnetoresistive element in which a long piece and short pieces arranged at an angle of 45 or 135 degrees form a zigzag resistor pattern. Since all the short pieces of this material are parallel, the change in resistance of the short pieces cancels out the change in resistance of the long pieces, making the sensitivity smaller than the sensitivity of the material itself.

イー31本発明が解決しようとする問題点上述のように
、従来技術では、抵抗体パターンを構成する短片の抵抗
変化が、長片の抵抗変化を減殺するように働らき、しか
もすべての短片が平行であるため、減殺の効果が加算さ
れ、全部が悪い方向に働らく。
E31 Problems to be Solved by the Present Invention As described above, in the prior art, the resistance change of the short pieces constituting the resistor pattern acts to reduce the resistance change of the long pieces, and moreover, all the short pieces Since they are parallel, the effects of reduction are added, and all of them work in a negative direction.

そのため素子の感度が小さくなる欠点があった。Therefore, there was a drawback that the sensitivity of the element was reduced.

この発明は主な磁気抵抗変化を生じる長片に対する短片
の配置や形状を工夫することにより、短片による抵抗変
化を短片自身で打ち゛消すようにして、従来技術の欠点
を低減するのが目的である。
The purpose of this invention is to reduce the drawbacks of the prior art by devising the arrangement and shape of the short piece relative to the long piece that causes the main magnetic resistance change so that the short piece itself cancels out the resistance change caused by the short piece. be.

口0発明の構成 ロー10問題点を解決するための手段 この発明の磁気抵抗素子は、平行に配列した複数の長片
と、この長片を直列に接続する複数の短片とで形成され
たジグザグ状抵抗体パターンの、長片と短片との間の角
度をは’−’45”7り−135の何れか一方に定め、
一つの短片がその中間ではり90に折曲がっていること
を特徴とするものである。
The magnetoresistive element of the present invention has a zigzag structure formed by a plurality of long pieces arranged in parallel and a plurality of short pieces connecting the long pieces in series. The angle between the long piece and the short piece of the shaped resistor pattern is set to either '-'45''7 or -135,
It is characterized in that one short piece is bent into a beam 90 in the middle.

ロー20作 用 磁界の方向即ち角度θが変化すると、それに応じて抵抗
体パターンの各長片の抵抗値が変化するが、短片が中間
で直角に折れ曲っているため、折れ曲り点の両側の各部
分の抵抗値変化が相殺されて素子の抵抗値変化として現
われない、 従って、磁界の方向θに応じて変化する磁
気抵抗素子の抵抗値は長片による変化分だけとなる。
Rho 20 action When the direction of the magnetic field, that is, the angle θ changes, the resistance value of each long piece of the resistor pattern changes accordingly, but since the short pieces are bent at right angles in the middle, both sides of the bending point Changes in the resistance value of each part cancel each other out and do not appear as changes in the resistance value of the element. Therefore, the resistance value of the magnetoresistive element that changes depending on the direction θ of the magnetic field is only the change due to the long piece.

ロー3.実施例 第1図の実施例において、(5)は絶縁性基板、(6)
は抵抗体パターン、(7)は抵抗体パターン(6)を構
成する長片と直角に配置された長片を有する別の抵抗体
パターンで抵抗体パターン(6)と電気的に直列に接続
されている。 (8)、 (9)、αωは電極である。
Row 3. Example In the example shown in FIG. 1, (5) is an insulating substrate, (6)
is a resistor pattern, and (7) is another resistor pattern having a long piece arranged at right angles to the long piece constituting the resistor pattern (6), which is electrically connected in series with the resistor pattern (6). ing. (8), (9), αω is an electrode.

抵抗体パターンは平行に配列された複数の長片(11)
 、  (12) 、  (13) 、  ・・・と複
数の短片(14) 、  (15) 、  (16) 
、  ・・・が図示のように直列に接続され全体がジグ
ザク状に形成されている。
The resistor pattern consists of a plurality of long pieces (11) arranged in parallel.
, (12), (13), ... and multiple short pieces (14), (15), (16)
, . . . are connected in series as shown in the figure, and the whole is formed in a zigzag shape.

長片と短片との間の角A、B、C,Dは何れも135°
に定めてあり、短片(14)  (15)は中間で90
’折れ曲っている。 従って、長片に対する磁界Bの方
向が角θをなすとき、短片(14)の半分である(14
−1)は磁界とθ+45’(7)角をなし、他の半分で
ある(14−2)はθ+135°の角を構成する。
The angles A, B, C, and D between the long piece and the short piece are all 135°.
The short pieces (14) and (15) are 90 mm in the middle.
'It's bent. Therefore, when the direction of the magnetic field B with respect to the long piece forms an angle θ, the direction of the magnetic field B with respect to the long piece is half that of the short piece (14).
-1) forms an angle θ+45' (7) with the magnetic field, and the other half (14-2) forms an angle θ+135°.

長片(11)の抵抗値Rは R−RO+’AΔRcos 2θ 短片(14)の半分である(14−1)の抵抗値rμよ
1=’A r、+WΔrcos  2  (θ+45)
他の半分(14−1)の抵抗値tは r、= l r、 + %Δrcos  2  (θ+
135)となる。 但し、〃r6は短片(14)の半分
(14−1)(14−2)が磁界と45’(7)角をな
すときの抵抗値、〃ΔRは磁界が回転したときの短片(
14)の半分(14−1)  (14−2)の抵抗変化
である。
The resistance value R of the long piece (11) is R-RO+'AΔRcos 2θ The resistance value rμ of the short piece (14-1) is half that of the short piece (14) 1='A r, +WΔrcos 2 (θ+45)
The resistance value t of the other half (14-1) is r, = l r, + %Δrcos 2 (θ+
135). However, 〃r6 is the resistance value when half (14-1) (14-2) of the short piece (14) forms a 45' (7) angle with the magnetic field, and 〃ΔR is the resistance value when the short piece (14) when the magnetic field rotates.
The resistance change is half (14-1) (14-2) of 14).

長片(11)と短片(14)の抵抗の和は、R+ r、
+ r、−Ro + rt、+ ’/、ΔRcos 2
θ−・・(3)となり、短片自身の磁気抵抗変化は90
に折れ曲った両側部分(14−1)と(14−2)とで
相殺され、抵抗の和R+r、+r、の磁気抵抗変化の割
合はΔR/ (Ro 十r、、)となり、従来技術の第
6図の(ΔR−Δr) / (Ro + rD)より大
きい。
The sum of the resistances of the long piece (11) and the short piece (14) is R+r,
+ r, -Ro + rt, +'/, ΔRcos 2
θ-...(3), and the magnetic resistance change of the short piece itself is 90
It is canceled out by the bent side parts (14-1) and (14-2), and the rate of change in magnetoresistance of the sum of resistances R+r, +r is ΔR/ (Ro +r,,), which is different from the conventional technology. It is larger than (ΔR - Δr) / (Ro + rD) in FIG.

通常材料自体のもつ磁気抵抗変化の割合ΔR/Roは約
5%であるが、第6図の従来技術ではRとrの比を10
:lとすると磁気抵抗変化の割合は(ΔR−Δr ) 
/ (R+ r、) =0.0409即ち、4.09%
となる。 これに対し実施例の場合、同じ基板寸法に抵
抗体パターンを形成するとして、Rとr+rの比が9 
: 1.414となるので素子としての磁気抵抗変化の
割合は ΔR/  (Ro  + r、)  =0.05X9 
 /  (9+1.414  )=0.0432 即ち4.32%となり、従来素子より0.23%だけ大
きくなる。
Normally, the rate of change in magnetoresistance ΔR/Ro of the material itself is about 5%, but in the prior art shown in FIG.
:l, the rate of change in magnetoresistance is (ΔR−Δr)
/ (R+ r,) = 0.0409 or 4.09%
becomes. On the other hand, in the case of the example, assuming that the resistor pattern is formed on the same substrate size, the ratio of R and r+r is 9.
: 1.414, so the rate of change in magnetoresistance as an element is ΔR/ (Ro + r,) = 0.05X9
/ (9+1.414)=0.0432, that is, 4.32%, which is 0.23% larger than the conventional element.

なお、上記実施例では、長片と短片の間の角を135′
としたが、第7図のように45としても同じ作用効果が
得られる。
In the above embodiment, the angle between the long piece and the short piece is 135'.
However, the same effect can be obtained even if it is 45 as shown in FIG.

ハ0発明の効果 抵抗体パターンの短片自身の磁気抵抗変化による素子の
感度低下がなくなるため、それだけ素子の感度が向上す
る効果がある。
C0 Effects of the Invention Since there is no reduction in the sensitivity of the element due to changes in the magnetic resistance of the short pieces of the resistor pattern itself, there is an effect that the sensitivity of the element is improved accordingly.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例の平面図で、表面の絶縁被膜
を省略した図、 第2図は、第1図の抵抗体パターン(
6)の一部を示す略図、第3図は第2図の抵抗体パター
ンと磁界との角度関係を示す図、第4図は磁気抵抗効果
を説明する斜面図、第5図は第4図のもの\磁界の方向
θと抵抗Rとの関係を示す線図、第6図は従来技術の抵
抗体パターンの一部拡大平面図、第7図は他の実施例の
抵抗体パターンの一部を示す略図である。
FIG. 1 is a plan view of an embodiment of the present invention, with the insulating coating on the surface omitted. FIG. 2 is a diagram showing the resistor pattern (
6), Figure 3 is a diagram showing the angular relationship between the resistor pattern in Figure 2 and the magnetic field, Figure 4 is an oblique view explaining the magnetoresistive effect, and Figure 5 is Figure 4. Figure 6 is a partially enlarged plan view of a conventional resistor pattern, and Figure 7 is a part of a resistor pattern of another embodiment. FIG.

Claims (1)

【特許請求の範囲】[Claims] 平行に配列した複数の長片と、この長片を直列に接続す
る複数の短片とで形成されたジグザグ状抵抗体パターン
の、長片と短片との間の角度をほゞ45°か135°の
何れか一方に定め、一つの短片がその中間でほゞ90°
に折曲がっていることを特徴とする磁気抵抗素子。
The angle between the long pieces and the short pieces of a zigzag resistor pattern formed by a plurality of long pieces arranged in parallel and a plurality of short pieces connecting the long pieces in series is approximately 45° or 135°. one short piece is approximately 90° in the middle.
A magnetoresistive element characterized by being bent.
JP60075157A 1985-04-09 1985-04-09 Magnetoresistance element Pending JPS61234084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60075157A JPS61234084A (en) 1985-04-09 1985-04-09 Magnetoresistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60075157A JPS61234084A (en) 1985-04-09 1985-04-09 Magnetoresistance element

Publications (1)

Publication Number Publication Date
JPS61234084A true JPS61234084A (en) 1986-10-18

Family

ID=13568087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60075157A Pending JPS61234084A (en) 1985-04-09 1985-04-09 Magnetoresistance element

Country Status (1)

Country Link
JP (1) JPS61234084A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08160115A (en) * 1994-12-07 1996-06-21 Nec Corp Magnetic reluctance sensor
JP2007048847A (en) * 2005-08-08 2007-02-22 Tokai Rika Co Ltd Reluctance element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08160115A (en) * 1994-12-07 1996-06-21 Nec Corp Magnetic reluctance sensor
JP2007048847A (en) * 2005-08-08 2007-02-22 Tokai Rika Co Ltd Reluctance element

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