JPS61232687A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPS61232687A JPS61232687A JP60075155A JP7515585A JPS61232687A JP S61232687 A JPS61232687 A JP S61232687A JP 60075155 A JP60075155 A JP 60075155A JP 7515585 A JP7515585 A JP 7515585A JP S61232687 A JPS61232687 A JP S61232687A
- Authority
- JP
- Japan
- Prior art keywords
- pieces
- long
- short
- angle
- piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
Description
【発明の詳細な説明】
イ1発明の目的
イー1.産業上の利用分野
この発明は強磁性体の異方性磁気抵抗効果を利用した磁
気抵抗素子に関する。[Detailed Description of the Invention] A1 Objective of the Invention E1. INDUSTRIAL APPLICATION FIELD This invention relates to a magnetoresistive element that utilizes the anisotropic magnetoresistive effect of a ferromagnetic material.
イー2.従来技術
磁気抵抗素子は、平な絶縁性基板上に強磁性体の薄膜を
真空蒸着法やスパッタ法により蒸着し、これをポトリソ
グラフィー、エツチングにより抵抗体パターンに形成し
、更に、抵抗体パターンを形成するのと同様の方法で電
極を形成したものである。 この磁気抵抗素子は素子に
か−る磁界の方向に応じてその電気抵抗が変化するため
、磁石の回転や移動等、物理量の計測に利用されている
。E2. Conventional magnetoresistive elements are made by depositing a thin film of ferromagnetic material on a flat insulating substrate by vacuum evaporation or sputtering, forming a resistor pattern by photolithography and etching, and then forming a resistor pattern. The electrodes were formed in the same manner as the electrodes were formed. Since the electrical resistance of this magnetoresistive element changes depending on the direction of the magnetic field applied to the element, it is used to measure physical quantities such as the rotation and movement of a magnet.
強磁性抵抗効果は、Nt、Go 、Fe又はこれらの合
金など磁気抵抗効果を有する強磁性体T4III fl
)に第4図に示すように電流(+)を流し、薄膜の面内
に磁気抵抗効果が充分に飽和する大きな磁界(B)を電
流(i)と角度θをなすようにかげると、強磁性体の抵
抗値Rがθに応じて変化する現象である。 角度θが4
5のときの抵抗値をRo+磁界の回転により生じる抵抗
変化分をΔRとすると、抵抗Rは次の(1)式で示され
る。The ferromagnetic resistance effect can be achieved by using a ferromagnetic material T4III fl with a magnetoresistive effect such as Nt, Go, Fe or an alloy thereof.
) as shown in Figure 4, and a large magnetic field (B) that sufficiently saturates the magnetoresistive effect is applied in the plane of the thin film at an angle θ with the current (i). This is a phenomenon in which the resistance value R of the magnetic material changes according to θ. Angle θ is 4
If the resistance value at the time of 5 is Ro+the resistance change caused by the rotation of the magnetic field is ΔR, then the resistance R is expressed by the following equation (1).
R=Ro+%ΔRCO32θ ・・・・(1)磁界(B
)の方向、即ち角度θと抵抗Rのこの関係は第5図に示
すように、1806毎に繰返す波形で、電流(i)や磁
界CB)が逆向きになっても抵抗値Rは同じ値となる。R=Ro+%ΔRCO32θ...(1) Magnetic field (B
) direction, that is, the angle θ, and this relationship between resistance R is a waveform that repeats every 1806 times as shown in Figure 5, and even if the current (i) and magnetic field CB) are reversed, the resistance value R remains the same. becomes.
実用的な磁気抵抗素子は、素子の抵抗値を大きくするた
めに、平行に配列した多数の長片と、これらの長片を直
列に接続する多数の短片とでジグザク状(折返し状)の
抵抗体パターンを形成していて、特開昭50−2898
9や相開昭54−1′485’77号公報に開示されて
いる。 このジグザク状抵抗体パターンの一部を第6図
に示すが、長片(2)と短片(:() (4)とは直角
に配置され、短片(3)と(4)は平行である。 抵抗
値がRの長片(2)と、抵抗値がrの短片(3)が夫々
n個接続されて素子が形成されていると、素子の全抵抗
値はn(R→r)となる。In order to increase the resistance value of the element, a practical magnetoresistive element has a zigzag-like (folded) resistance structure consisting of a large number of long pieces arranged in parallel and a number of short pieces that connect these long pieces in series. It forms a body pattern, and is published in Japanese Patent Application Laid-Open No. 50-2898.
9 and Sokai No. 54-1'485'77. A part of this zigzag resistor pattern is shown in Figure 6, where the long piece (2) and the short piece (4) are arranged at right angles, and the short pieces (3) and (4) are parallel. If an element is formed by connecting n long pieces (2) with a resistance value of R and n short pieces (3) with a resistance value of r, the total resistance value of the element is n(R→r). Become.
長片の抵抗値Rは
R=Ro+%ΔRcos 2θ
で、短片の抵抗値rは
r −r、 十%△rcos 2 (θ→−90)で
あるから、
R’+r=Ro →−r、l十V2(△R−Δr)co
s2θ・・・・(2)
となり、この素子の磁気抵抗変化の割合は(ΔR−Δr
) / (Ro −1−ro )で1、第4図に示す材
料自体のもつ磁気抵抗変化の割合ΔR/Rより小さくな
る。 そして、小さくなる原因は短片が長片にと直角に
配置されているため、磁界の方向θに応じて、長片の抵
抗変化を減殺する方向に短片の抵抗値が変化するからで
ある。The resistance value R of the long piece is R=Ro+%ΔRcos 2θ, and the resistance value r of the short piece is r − r, 10% Δrcos 2 (θ→−90), so R'+r=Ro →−r, l 10V2(△R-∆r)co
s2θ...(2) The rate of change in magnetoresistance of this element is (ΔR-Δr
) / (Ro −1−ro ) is 1, which is smaller than the rate of magnetoresistance change ΔR/R of the material itself shown in FIG. The reason for the decrease is that the short pieces are arranged at right angles to the long pieces, so that the resistance value of the short pieces changes in a direction that reduces the resistance change of the long pieces, depending on the direction θ of the magnetic field.
上記従来技術は長片と短片が直角であるが、米国特許3
40□5355号明細書には、し片と45°又は135
Dの角度に配置された短片とでジグザク状の抵抗体パタ
ーンを構成する磁気抵抗素子が示されている。 このも
のはすべての短片が平行であるため、やはり、短片の抵
抗変化分が長片の抵抗変化を減殺し、材料自体のもつ感
度よりも感度が小さくなる。In the above conventional technology, the long piece and the short piece are at right angles, but US Pat.
No. 40□5355 specifies that the angle between the strip and the 45° or 135°
A magnetoresistive element is shown that forms a zigzag resistor pattern with short pieces arranged at an angle D. Since all the short pieces of this material are parallel, the change in resistance of the short pieces cancels out the change in resistance of the long pieces, making the sensitivity smaller than the sensitivity of the material itself.
イー3. 本発明が解決しよ・うとする問題点−ト述の
ように、従来技術では、抵抗体パターンを構成する短片
の抵抗変化が、長片の抵抗変化を減殺するように働らき
、しかもすべての短片が平行であるため、減殺の効果が
加算され、全部が悪い方向に働らく。E3. Problems to be Solved by the Present Invention - As mentioned above, in the prior art, the resistance change of the short pieces constituting the resistor pattern acts to reduce the resistance change of the long pieces, and all Since the short pieces are parallel, the effects of attenuation are additive and all work in a negative direction.
そのため素子の感度が小さくなる欠点があった。Therefore, there was a drawback that the sensitivity of the element was reduced.
この発明は主な磁気抵抗変化を生じる長片に対する短片
の配置を工夫することにより、短片による抵抗変化を短
片同志で打消し合うようにして、従来技術の欠点を低減
することが目的である。The purpose of this invention is to reduce the drawbacks of the prior art by devising the arrangement of the short pieces relative to the long pieces that cause the main magnetic resistance change so that the short pieces cancel out the resistance changes caused by the short pieces.
口1発明の構成
ロー1. 問題点を解決するための手段この発明の磁気
抵抗素子は、平行に配列した複数の長片と、この長片を
直列に接続する複数の短片とで形成されたジグザグ状抵
抗体バク−ンの、長片と短片との接続部における両者間
の角度を順次交互には’A’45’と135°に定めた
ことを特徴とするものである。1. Constituent row of invention 1. Means for Solving the Problems The magnetoresistive element of the present invention includes a zigzag-shaped resistor backbone formed of a plurality of long pieces arranged in parallel and a plurality of short pieces connecting the long pieces in series. The present invention is characterized in that the angle between the long piece and the short piece at the connecting portion thereof is set to 135° and ``A'' 45 degrees in sequence.
0−2゜作 用
この発明によると、磁気抵抗素子を構成する抵抗体パタ
ーンの一つの長片の両端に位置する短片は相互に90の
角をなす。 従って、磁界が素子面内で回転するとき、
両端に位置する短片同志の抵抗変化が逆向きになって打
消し合うため、素子の感度が減殺されない。0-2° Effect According to the present invention, the short pieces located at both ends of one long piece of the resistor pattern constituting the magnetoresistive element form an angle of 90 degrees with respect to each other. Therefore, when the magnetic field rotates within the element plane,
Since the resistance changes of the short strips located at both ends are in opposite directions and cancel each other out, the sensitivity of the element is not diminished.
長片自体の磁界による抵抗変化は従来技術と同じである
。The change in resistance of the long piece itself due to the magnetic field is the same as in the prior art.
ロー3.実施例
第1図の実施例において、(5)は絶縁性基板、(6)
は抵抗体パターン、(7)は抵抗体パターン+61を構
成する長片と直角に配置された長片を有する別の抵抗体
パターン、+81. (91及び00)は電極である。Row 3. Example In the example shown in FIG. 1, (5) is an insulating substrate, (6)
is a resistor pattern, (7) is another resistor pattern having long pieces arranged at right angles to the long pieces forming resistor pattern +61, +81. (91 and 00) are electrodes.
抵抗体パターン(6)は、平行に配列された複数の長片
(]I) 、 (12) 、 (13) 、 (
+4)・・・と、これらの長片を直列接続するための複
数の短片(15)、 (16) 、 (17) 、
・・・より構成されている。The resistor pattern (6) includes a plurality of long pieces (]I), (12), (13), (
+4)... and a plurality of short pieces (15), (16), (17), for connecting these long pieces in series.
It is composed of...
この抵抗体パターン(6)は第2図に示すように、長片
(11)と短片(15)との間の角Aが45°短片(1
5)と長片(12)との間の角Bが1351長片(12
)と短片(16)との間の角Cが457短片(16)と
長片(13)との間の角りが135’長片(13)ど短
片(17)との間の角Eが45′:短片(17)と長片
(14)との間の川下が135′に、角A、B、C,・
・・Fの順に交互に45と135に定められている。
そのため、一つの長片(12)の両端の短片(15)と
(16)は相互に直角に配置されることになる。As shown in FIG. 2, this resistor pattern (6) has an angle A between the long piece (11) and the short piece (15) of 45°.
5) and the long piece (12) is 1351 long piece (12)
) and the short piece (16) is 457, the angle between the short piece (16) and the long piece (13) is 135', and the angle E between the long piece (13) and the short piece (17) is 45': Downstream between short piece (17) and long piece (14) is 135', angles A, B, C, ・
. . 45 and 135 are set alternately in the order of F.
Therefore, the short pieces (15) and (16) at both ends of one long piece (12) are arranged at right angles to each other.
なお、第2図は説明の便のため長片や短片を巾のない線
(直線)で表現しているが、実際には第3図に示すよう
に一定のl]をもっている。In addition, in FIG. 2, the long pieces and short pieces are expressed as lines (straight lines) with no width for convenience of explanation, but in reality, they have a constant l] as shown in FIG.
第3図において、短片(15) 、 (1,6)の抵
抗値r、は
r、−r。−L ’AΔrcos 2 (0月35°)
である。 ただし、rDは短片(16)と磁界I3とが
45の角度のときの短片(16)の抵抗値、Δrは磁界
が回転したときの短片(16)の抵抗変化である。In FIG. 3, the resistance values r of the short pieces (15) and (1,6) are r, -r. −L'AΔrcos 2 (October 35°)
It is. However, rD is the resistance value of the short piece (16) when the short piece (16) and the magnetic field I3 are at an angle of 45, and Δr is the resistance change of the short piece (16) when the magnetic field rotates.
又、短片(17)について、その抵抗値rLはrz””
r、十’AΔrcos 2 (θ→−45らであ
る。Moreover, the resistance value rL of the short piece (17) is rz""
r, 1'AΔrcos 2 (θ→−45 et al.
又、長片(II) 、 (12) 、 (1,3)
の抵抗値RばR=Ro+’AΔRcos2θ
であるから、長片(12)の抵抗Rと短片(16)の抵
抗r7の和R′しは
RT、=R+r、=Ro 十r。+2ΔRcos2θ−
(2Δrsin2 θ
同様に、長片(13)の抵抗Rと短片(II)の抵抗r
よの和RT、ば
RT、−R+r、= Ro → r、+ ’AΔRc
os2 θ−2Δrsin2 θ
となる。 抵抗体パターン(6)全体についての長片と
短片の数を夫々nとすると、その全抵抗は(R”[”、
+R″r2) n/2=n (Ro +ro)
−1−−7−ΔRcos2 θ−−−!3)
。Also, long pieces (II), (12), (1,3)
Since the resistance value R is R=Ro+'AΔRcos2θ, the sum R' of the resistance R of the long piece (12) and the resistance r7 of the short piece (16) is RT,=R+r,=Ro+r. +2ΔRcos2θ−
(2Δrsin2θ Similarly, the resistance R of the long piece (13) and the resistance r of the short piece (II)
Yo's sum RT, ba RT, -R+r, = Ro → r, + 'AΔRc
os2 θ−2Δrsin2 θ. If the number of long pieces and short pieces in the entire resistor pattern (6) is n, the total resistance is (R''['',
+R″r2) n/2=n (Ro +ro)
−1−−7−ΔRcos2 θ−−−! 3)
.
、2、
となり、短片の磁気抵抗変化は短片州庁に相殺され、抵
抗体パターン(6)からなる素子の磁気抵抗変化の割合
はΔR/ (Ro 十r、、)となり、従来技術の第6
図のものの(ΔR−Δr) / (Ro 十r。)より
大きくなる。, 2, and the change in magnetic resistance of the short piece is canceled out by the state of the short piece, and the rate of change in magnetic resistance of the element consisting of the resistor pattern (6) is ΔR/ (Ro + r,,), which is the same as that of the conventional technique 6.
It is larger than (ΔR - Δr) / (Ro + r.) in the figure.
通常材料自体のもつ磁気抵抗変化の割合ΔR/Roは約
5%であるが、第6図の従来技術ではRとrの比を10
:]とすると、磁気抵抗変化の割合は(ΔR−Δr )
/ (Ro +r、) =0.0409 即ち、4
.09%となる。 これに対し、本発明の場合、同じ基
板寸法に抵抗体パターンを形成するとして、第3図のR
とrz(又はrよ)の比が9 :]、414 トf、r
るので、素子としての磁気抵抗変化の割合はΔR/ (
Ro + r、) =0.05x9 / (9+1
.414 )−〇、0432
即ち4.32%となり、従来素子の4.09%より0.
23%だけ大きな値となる。Normally, the rate of change in magnetoresistance ΔR/Ro of the material itself is about 5%, but in the prior art shown in FIG.
:], the rate of change in magnetoresistance is (ΔR−Δr)
/ (Ro + r,) = 0.0409, i.e. 4
.. 09%. On the other hand, in the case of the present invention, assuming that the resistor pattern is formed on the same substrate size, R
The ratio of and rz (or r yo) is 9: ], 414 f, r
Therefore, the rate of change in magnetoresistance as an element is ΔR/(
Ro + r,) = 0.05x9 / (9+1
.. 414)-〇,0432 That is, it is 4.32%, which is 0.0% lower than the conventional element's 4.09%.
The value is 23% larger.
ハ1発明の効果
この発明によれば、直列接続された短片が隣り同志で直
角となり、磁気抵抗変化が相殺されるため、素子の感度
が向上する。C1 Effects of the Invention According to the invention, adjacent short pieces connected in series are at right angles to each other, and changes in magnetic resistance are canceled out, so that the sensitivity of the element is improved.
第1図はこの発明の実施例の平面図で、表面の絶縁被膜
を省略した図である。 第2図は、第1図の抵抗体パタ
ーン(6)を説明する図、第3図(a) (b+は第1
図の抵抗体パターンの一部拡大図と磁界Bと長片、短片
との角度関係を示す図、第4図は磁気抵抗効果を説明す
る斜面図、第5図は第4図のもの\磁界の方向θと抵抗
Rの関係線図、第6図は従来技術の抵抗体パターンの一
部拡大平面図である。
(5)・・・絶縁性基板FIG. 1 is a plan view of an embodiment of the present invention, with the insulating coating on the surface omitted. FIG. 2 is a diagram explaining the resistor pattern (6) in FIG. 1, and FIG. 3(a) (b+ is the first
A partially enlarged view of the resistor pattern shown in the figure and a diagram showing the angular relationship between the magnetic field B and the long and short pieces. Figure 4 is an oblique view explaining the magnetoresistive effect. Figure 5 is the one shown in Figure 4\magnetic field. FIG. 6 is a partially enlarged plan view of a conventional resistor pattern. (5)...Insulating substrate
Claims (1)
る複数の短片とで形成されたジグザグ状抵抗体パターン
の、長片と短片との接続部における両者間の角度を順次
交互にほゞ45°と135°に定めたことを特徴とする
磁気抵抗素子。In a zigzag resistor pattern formed by a plurality of long pieces arranged in parallel and a plurality of short pieces connecting the long pieces in series, the angle between the long pieces and the short pieces is sequentially alternated at the connection part between the long pieces and the short pieces. A magnetoresistive element characterized by having angles of approximately 45° and 135°.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60075155A JPS61232687A (en) | 1985-04-09 | 1985-04-09 | Magnetoresistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60075155A JPS61232687A (en) | 1985-04-09 | 1985-04-09 | Magnetoresistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61232687A true JPS61232687A (en) | 1986-10-16 |
Family
ID=13568030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60075155A Pending JPS61232687A (en) | 1985-04-09 | 1985-04-09 | Magnetoresistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61232687A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288183U (en) * | 1988-12-26 | 1990-07-12 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866381A (en) * | 1981-10-15 | 1983-04-20 | Nec Home Electronics Ltd | Joy stick |
-
1985
- 1985-04-09 JP JP60075155A patent/JPS61232687A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866381A (en) * | 1981-10-15 | 1983-04-20 | Nec Home Electronics Ltd | Joy stick |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288183U (en) * | 1988-12-26 | 1990-07-12 |
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