JPS61232645A - Molding material for sealing - Google Patents

Molding material for sealing

Info

Publication number
JPS61232645A
JPS61232645A JP7469685A JP7469685A JPS61232645A JP S61232645 A JPS61232645 A JP S61232645A JP 7469685 A JP7469685 A JP 7469685A JP 7469685 A JP7469685 A JP 7469685A JP S61232645 A JPS61232645 A JP S61232645A
Authority
JP
Japan
Prior art keywords
molding material
sealing
microns
resin
impurity element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7469685A
Other languages
Japanese (ja)
Inventor
Yasuhiro Kyotani
京谷　靖宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP7469685A priority Critical patent/JPS61232645A/en
Publication of JPS61232645A publication Critical patent/JPS61232645A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a molding material for sealing, in which a soft-error is not generated, by bringing the content of a radioactive impurity element in the molding material to 1ppb or less. CONSTITUTION:The content of a radioactive impurity element, such as uranium and thorium, must be brought to 1ppb or less in compounding materials, such as a synthetic resin, such as epoxy resin, unsaturated polyester resin, polyimide resin, phenol resin, polyphenylene polysulfide, etc. used, a curing agent, a plasticizer, an inorganic filler, a mold release, a coupling agent, a coloring agent, a flame retardant, etc. Since a material easy to most containing the radioactive impurity element is the inorganic filler in the compounding materials, it is desirable that not natural articles but synthetic silica is used as the inorganic filler. These compounding materials are mixed, kneaded and crushed and further granulated as required, thus acquiring a molding material for sealing.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は電気部品や電子部品を封止する樹脂モルト品に
主として用りられる封止用成形材料に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a molding material for sealing which is mainly used for resin malt products for sealing electrical and electronic parts.

〔背景技術〕[Background technology]

近年、電気、電子機器の高性能化、昼信頼性、生産性向
上のため、プラスチラフによる封止がなされるようにな
ってきた。これらの電気部品や電子部品には例えばトラ
ンジスタ、ダイオード、コンデンサー、フィルター、整
流器、抵抗体、コイル等があり、特にメモりＩＣ，ＣＣ
Ｄ等の記憶素子は、素子の高密度、直集積化により蓄積
できる１１１ｍも減少するため封止材料中のＸ線の放射
により記憶情報の反転いわゆるソフトエラーが発生しや
すくなる欠点があった。この対策として素子表面にポリ
イミド樹脂やシリコーン樹脂等を塗布しＸ線を吸収させ
る方法が用いられたがｆｊｉｋＭ化が難しいという問題
があった。In recent years, in order to improve the performance, daytime reliability, and productivity of electrical and electronic equipment, sealing with plasticaf has come to be used. These electric and electronic parts include transistors, diodes, capacitors, filters, rectifiers, resistors, coils, etc., and especially memory ICs and CCs.
Memory elements such as D have the disadvantage that the storage capacity of 111 m is reduced due to the high density and direct integration of the elements, so that a so-called soft error, in which stored information is reversed, is likely to occur due to radiation of X-rays in the sealing material. As a countermeasure to this problem, a method has been used in which the element surface is coated with polyimide resin, silicone resin, or the like to absorb the X-rays, but there is a problem in that it is difficult to make fjikM.

〔発明の目的〕[Purpose of the invention]

本発明の目的とするところは、ソフトエラーの発生しな
い封止用成形材料を提供することにある。An object of the present invention is to provide a molding material for sealing that does not cause soft errors.

〔発明の開示〕[Disclosure of the invention]

本発明は成形材料中の放射性不純物元素含有率が１ｐｐ
ｂ以下であることを特徴とする封止用成形材料のため封
止成形材料中のＸ線の放射によるソフトエラーを発生す
ることがなくなったもので、以下本発明の詳細な説明す
る。The present invention has a radioactive impurity element content of 1pp in the molding material.
Since the sealing molding material is characterized in that the temperature is less than b, soft errors due to X-ray radiation in the sealing molding material will not occur.The present invention will be described in detail below.

本発明に用りるエポキシ樹脂、不飽和ポリエステル樹脂
、ポリイミド樹脂、フェノール樹脂、ポリフェニレンポ
リサルファイド等の合成樹脂、硬化剤、可塑剤、無機充
填剤、離型剤、カップリング剤、着色剤、難燃剤等の配
合材料はウラニウム、トリウム等の放射性不純物元素含
有率がｉ　１）Ｔｌｂ以下であることが必要である。１
ｐｐｂをこえるとＸ線の放射により素子がソフトエラー
を発生するからである。上記配合材料中、量も放射性不
純物元素を含有しやすい材料は無機充填剤であるため好
ましくは無機充填剤としては天然品でなく、合成シリカ
を用（へることが望ましいことで更に合成シリカの粒度
分布としては０〜２０ミクロンが４０−６０　　重量係
（以下単に係と記す）、２０〜４４ミクロンがｔｏ−３
０係、４４〜７４ミクロンが１０〜３０チ、７４〜１０
５ミクロンが０．５〜１０％、　１０５〜１４９ミクロ
ンが０．５〜５％であることが成形性がよく望−１しｂ
ことである。ｊＪｌえて合成シリカの形状は４４〜１４
９ミクロンが球状で、０〜２０ミクロンが破砕状である
ことが成形時のパッシベーション膜を錫つけることがな
く好ましいことである。これら配合材料を混合、混練、
粉砕し更に必要に応じて造粒化して封止用成形材料を得
るものである。更に該成形材料の成形については、トラ
ンスファー成形、射出成形等によるトランジスター、ダ
イオード、コンデンサー、フィルター、整流器、抵抗体
、コイル等の電子部品の多数個取り成形に適することは
勿論、圧縮成形等にも適用できるものである。以下本発
明を実施例にもとすいて詳細に説明する。Synthetic resins such as epoxy resins, unsaturated polyester resins, polyimide resins, phenolic resins, and polyphenylene polysulfides, curing agents, plasticizers, inorganic fillers, mold release agents, coupling agents, coloring agents, and flame retardants used in the present invention It is necessary that the content of radioactive impurity elements such as uranium and thorium is below i1)Tlb. 1
This is because if it exceeds ppb, the element will generate soft errors due to X-ray radiation. Among the above compounded materials, the material that is likely to contain radioactive impurity elements in terms of quantity is an inorganic filler, so it is preferable to use synthetic silica rather than natural products as the inorganic filler. As for the particle size distribution, 0 to 20 microns is a 40-60 weight ratio (hereinafter simply referred to as a weight ratio), and 20 to 44 microns is a to-3 weight ratio.
0 section, 44-74 microns is 10-30 inches, 74-10
It is desirable for good moldability to be 0.5 to 10% for 5 microns and 0.5 to 5% for 105 to 149 microns.
That's true. The shape of synthetic silica is 44-14
It is preferable that 9 microns be spherical and 0 to 20 microns be crushed, so that the passivation film is not tinned during molding. Mixing, kneading, and
A molding material for sealing is obtained by pulverizing and granulating if necessary. Furthermore, regarding the molding of this molding material, it is suitable for multi-cavity molding of electronic components such as transistors, diodes, capacitors, filters, rectifiers, resistors, coils, etc. by transfer molding, injection molding, etc., as well as compression molding, etc. It is applicable. The present invention will be described in detail below using examples.

実施例 エポキシ極脂１００重量部（以下単に部と記す）、フェ
ノールノボラック樹脂５０部、２メチルイミタゾ一ル１
部、カルナウバワックス２部、着色剤３部、ｒクリシト
キシプロビルトリメトキシシラン３部、合成シリカ（粒
度分布は０〜２０ミクロンが５Ｏｑｂ％２０〜４４ミク
ロンが２０係、４４〜７４ミクロンが２０係、７４〜１
０５　ミクロンが７％、１０５〜１４９ミクロンが３％
）４５０部を配合したが放射性不純物元素含有率は０．
２ｐｐｂであり、該配合物を混合、混練、粉砕、造粒し
て封止用成形材料を得、トランスファー成形機を用りで
金型温度１７５℃、成形圧力５０　Ｋｑ／ｃＩＩ、硬化
時間３分間でメモリＩＣを封止成形した。Examples 100 parts by weight of epoxy resin (hereinafter simply referred to as parts), 50 parts of phenol novolak resin, 1 part of 2-methyl imitazole
1 part, carnauba wax 2 parts, coloring agent 3 parts, r-crisitoxypropyltrimethoxysilane 3 parts, synthetic silica (particle size distribution: 0 to 20 microns is 5 Oqb%, 20 to 44 microns is 20 parts, 44 to 74 microns is Section 20, 74-1
05 micron 7%, 105-149 micron 3%
), but the radioactive impurity element content was 0.
The compound was mixed, kneaded, pulverized, and granulated to obtain a molding material for sealing, and was molded using a transfer molding machine at a mold temperature of 175°C, a molding pressure of 50 Kq/cII, and a curing time of 3 minutes. A memory IC was sealed and molded.

従来例 実施例の合成シリカを結晶ｙ　ＩＪ力に変えた以外は実
施例と同様に処理して成形品を得たが、配合物の放射性
不純物元素含有率は５　ｐｐｂ　　であった。Conventional Example A molded article was obtained in the same manner as in the Example except that the synthetic silica used in the Example was changed to crystalline IJ, but the radioactive impurity element content of the blend was 5 ppb.

〔発明の効果］ 実施例及び従来例のＸ線によるソフトエラー発生率は第
２表で明白なように本発明の封止用成形材料の性能はよ
く、本発明の優れてｂることを確認した。[Effects of the Invention] As is clear from Table 2, the soft error incidence rate due to X-rays in the Examples and Conventional Examples shows that the performance of the sealing molding material of the present invention is good, confirming the superiority of the present invention. did.

Claims (3)

【特許請求の範囲】[Claims] （１）成形材料中の放射性不純物元素含有率が１ｐｐｂ
以下であることを特徴とする封止用成形材料。(1) Radioactive impurity element content in the molding material is 1 ppb
A molding material for sealing characterized by the following: （２）無機充填剤として合成シリカを用いることを特徴
とする特許請求の範囲第１項記載の封止用成形材料。(2) The molding material for sealing according to claim 1, characterized in that synthetic silica is used as the inorganic filler. （３）合成シリカの粒度分布が下記範囲であることを特
徴とする特許請求の範囲第１項、第２項記載の封止用成
形材料。 ０〜２０ミクロンが４０〜６０重量％ ２０〜４４ミクロンが１０〜３０重量％ ４４〜７４ミクロンが１０〜３０重量％ ７４〜１０５ミクロンが０．５〜１０重量％ １０５〜１４９ミクロンが０．５〜５重量％(3) The molding material for sealing according to claims 1 and 2, wherein the synthetic silica has a particle size distribution within the following range. 40-60% by weight of 0-20 microns 10-30% by weight of 20-44 microns 10-30% by weight of 44-74 microns 0.5-10% by weight of 74-105 microns 0.5% by weight of 105-149 microns ~5% by weight
JP7469685A 1985-04-09 1985-04-09 Molding material for sealing Pending JPS61232645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7469685A JPS61232645A (en) 1985-04-09 1985-04-09 Molding material for sealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7469685A JPS61232645A (en) 1985-04-09 1985-04-09 Molding material for sealing

Publications (1)

Publication Number Publication Date
JPS61232645A true JPS61232645A (en) 1986-10-16

Family

ID=13554647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7469685A Pending JPS61232645A (en) 1985-04-09 1985-04-09 Molding material for sealing

Country Status (1)

Country Link
JP (1) JPS61232645A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181359A (en) * 1987-01-23 1988-07-26 Sumitomo Bakelite Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181359A (en) * 1987-01-23 1988-07-26 Sumitomo Bakelite Co Ltd Semiconductor device

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