JPS6122870B2 - - Google Patents

Info

Publication number
JPS6122870B2
JPS6122870B2 JP14799480A JP14799480A JPS6122870B2 JP S6122870 B2 JPS6122870 B2 JP S6122870B2 JP 14799480 A JP14799480 A JP 14799480A JP 14799480 A JP14799480 A JP 14799480A JP S6122870 B2 JPS6122870 B2 JP S6122870B2
Authority
JP
Japan
Prior art keywords
thyristor
layer
triax
voltage
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14799480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5771178A (en
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14799480A priority Critical patent/JPS5771178A/ja
Publication of JPS5771178A publication Critical patent/JPS5771178A/ja
Publication of JPS6122870B2 publication Critical patent/JPS6122870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP14799480A 1980-10-22 1980-10-22 Semiconductor device Granted JPS5771178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14799480A JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14799480A JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5771178A JPS5771178A (en) 1982-05-01
JPS6122870B2 true JPS6122870B2 (US07860544-20101228-C00003.png) 1986-06-03

Family

ID=15442742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14799480A Granted JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771178A (US07860544-20101228-C00003.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364866U (US07860544-20101228-C00003.png) * 1986-10-16 1988-04-28

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364866U (US07860544-20101228-C00003.png) * 1986-10-16 1988-04-28

Also Published As

Publication number Publication date
JPS5771178A (en) 1982-05-01

Similar Documents

Publication Publication Date Title
US5221850A (en) Conductivity-modulating mosfet
US5357125A (en) Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
US4987098A (en) Method of producing a metal-oxide semiconductor device
CA1145058A (en) Triac having a multi-layer semiconductor body
JPS62115765A (ja) 半導体装置
US5677550A (en) Integrated circuit devices including insulated-gate transistor device having two separately biasable gates
JPH0449266B2 (US07860544-20101228-C00003.png)
US6806482B2 (en) Photovoltaic solid state relay
US4471372A (en) FET Controlled Triac
JPS6122870B2 (US07860544-20101228-C00003.png)
KR100842340B1 (ko) 반도체 집적회로 장치
KR960006107B1 (ko) 저출력-용량 2중 확산형 전계효과 트랜지스터
JPS637471B2 (US07860544-20101228-C00003.png)
JPH0654796B2 (ja) 複合半導体装置
US6188267B1 (en) Normally conducting dual thyristor
JPH05218311A (ja) 一体型オン・ステート電圧検出構造を有する高出力半導体デバイス
JP2500938B2 (ja) 半導体装置
JPH03105977A (ja) 半導体装置
JPH05315618A (ja) 絶縁ゲート型半導体装置
JPH0113232B2 (US07860544-20101228-C00003.png)
JPS60140921A (ja) サイリスタの制御回路
JPS58210676A (ja) 半導体装置
JPH0551187B2 (US07860544-20101228-C00003.png)
JPH0738081A (ja) 複合型半導体装置
JPS621252B2 (US07860544-20101228-C00003.png)