JPS61227973A - Silicon carbide ceramics-metal joined body - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a silicon carbide ceramic-metal bonded body with excellent bonding properties.

[Technical background of the invention and its problems] High-density sintered bodies mainly composed of silicon carbide (SiC) have good thermal conductivity among ceramics, have high heat resistance strength, and have a coefficient of thermal expansion comparable to that of silicon. It has the characteristic that they are almost the same, and is very advantageous especially for semiconductor devices such as circuit boards for giant transistor modules and circuit boards for C.

In addition, limiters for fusion reactors, which are currently being developed and tested,
Divertors and the like are required to have particularly high temperature strength and high thermal conductivity, and they also need to be constructed of small atomic materials with little plasma contamination, and silicon carbide ceramics are one of the few materials that meet these conditions. It is seen as promising.

By the way, whether silicon carbide ceramics are used as structural materials for semiconductor devices or as components for nuclear fusion reactors, it is essential to bond them with metal in order to provide conductivity or to provide a forced cooling section structure. .

In recent years, methods for joining silicon carbide ceramics and metals include using a copper-manganese alloy as a brazing material, or using copper and carbon II to prevent thermal stress fracture caused by the difference in thermal expansion between the metal and silicon carbide ceramics.
A method was developed to use a composite material with I as an intermediate joining member.

However, this method has the disadvantage that it is not possible to directly join metal and ceramics, and that a brazing filler metal is always required, making the process complicated.

[Objective of the Invention 1 The present inventors have discovered that when a silicon carbide ceramic containing silicon obtained by reaction sintering is brought into contact with Cu or a Cu alloy and heated, a liquid phase is formed between the free metallic silicon remaining in the ceramic and C(I). It was discovered that the reaction at the interface was promoted and a strong bonded body was obtained.

The present invention was made based on the above findings, and
Silicon carbide ceramics with excellent bondability and Cu or C
The purpose is to provide a bonded body with u alloy.

[Summary of the Invention] That is, the silicon carbide ceramic-metal bonded body of the present invention is characterized in that a silicon carbide ceramic containing silicon and Cu or a Cu alloy are bonded.

The silicon carbide ceramic containing silicon in the present invention means a silicon carbide ceramic sintered body containing 2 to 20% silicon, for example, produced by a reaction sintering method.

Silicon carbide ceramics produced by the reaction sintering method are advantageous because large products can be manufactured and the cost is low.

The silicon carbide ceramic sintered body and the CI or Cu alloy are bonded, for example, as follows. For example, tough pitch steel is brought into contact with the surface of the silicon carbide ceramic sintered body and heated to about 900 to 1000° C. in a vacuum or an inert gas atmosphere with or without pressure to bond them.

In the present invention, silicon carbide ceramics and a metal member mainly composed of Cu can be directly joined without a brazing material, but it is possible to directly bond silicon carbide ceramics to a metal member mainly composed of Cu, but it is possible to directly bond silicon carbide ceramics to a metal member mainly composed of Cu. The two may be bonded via an intermediate bonding layer.

When an intermediate bonding layer is used, it is preferable that at least one layer of the intermediate bonding layer is a discontinuous contact member that acts as a thermal stress buffer. Here, the term "discontinuous contact body" refers to a body that is in point or linear contact with the body to be contacted, and as a result, the contact area is smaller than the bonding area. Examples of the form include powder, foam, porous sintered body, foil, fiber, and reinforced composite.

Examples of the silicon carbide ceramic-metal bonded body according to the present invention include the following. Here S
i-8i C indicates a silicon carbide ceramic sintered body containing silicon.

Si -8i C/Cu /St -8t C3i -
8i C/Cu foil/Cu st -st C/C1 foil/Si -8i C8i -
8i C/Ni-P powder/Cu5t-8i C/N
i-P amorphous foil/Cu5t-8t C/Ni-C
r -Fe -8i -B amorphous foil/Cu 5i -8i C/Ni-Cr foam/Cus+ -s
t C/Cu foil/Ni-Cr foam/QuSi-8t
C/Cu-CI&IN composite material/Ni-P amorphous foil/Cu [Embodiments of the Invention] Next, embodiments of the present invention will be described.

Example 1 10 mm manufactured by Refe1 company's reaction sintering method
The joint surface of a silicon carbide ceramic sintered body measuring 101×20+n (length×width×thickness, hereinafter the same) with a metal member was polished to #400 and then washed with acetone.

On the other hand, both sides of a 10n x 10n x 0.5n tough pitch electrolytic copper plate were washed with dilute nitric acid.

Next, silicon carbide ceramics were brought into contact with both sides of this copper plate, and 50 kg was
The mixture was heated at 890° C. for 5 minutes under a pressure of /C.

In the thus obtained bonded body, the silicon carbide ceramic sintered body and the copper plate were in close contact with each other, and the bonded state was excellent.

Example 2 A silicon carbide ceramic-metal bonded body was manufactured in the same manner as in Example 1 except that copper foil was used instead of the copper plate in Example 1.

Example 3 A silicon carbide ceramic-metal bonded body was produced in the same manner as in Example 2, except that one of the silicon carbide ceramic sintered bodies in Example 2 was a copper plate.

Examples 4 to 6 10n of the same material as Example 1 pretreated in the same manner as Example 1
A silicon carbide ceramic sintered body of X Ion X 3n and a copper plate of 12n x 22n X 5n were
They were stacked together via intermediate bonding materials of nickel-based alloys shown in Table 1, each having a size of 12 mm x about 0.05 nm, and bonded under the conditions shown in Table 1.

*1...N 189wt%-pHwt% alloy, powder (
Fukuda Metal Co., Ltd. product name) *2...N 189vt%-P11wt% alloy, amorphous foil (Japan Amorphous Metal Co., Ltd. product name) *3-Ni53.5wt%-(:, r7wt %
-1" e3wt% -3i4.5wt% -332wt%
Alloy, non-alloy foil (trade name manufactured by Japan Amorphous Metal Co., Ltd.) In all of Examples 1 to 6, the sintered body and the copper plate were well bonded, and the sintered silicon carbide ceramics were bonded in the vicinity of the bonding layer. Liquid crystal interdiffusion between the silicon in the compact and the deposited metal was observed. In addition, some reactions with silicon carbide were expected in those using nickel-based alloys as brazing filler metals.

Examples 7 to 10 10 m of the same material as in Example 1 pretreated in the same manner as in Example 1
A silicon carbide ceramic sintered body of m x 10 mm x 4.5 mm and a copper plate of 12 n x 14 n x 5 mm were stacked together via the intermediate bonding agent shown in Table 2, and bonded under the conditions shown in Table 2. The atmosphere is 5~
It is in a vacuum of 10 x 10' Torr. (Margin below) * 4-4-1l x Ilu x 1.6m
m N%-Cr alloy, foam (trade name manufactured by Sumitomo Electric Industries, Ltd.) *5...11n X 11m1 X O,
07u tough pitch copper *6...1111 x 11m
1 X 005M tough pitch steel* 7-11ni X
11n X O, 5n CIJ+C fiberll35vo
1% IM? 11 compound material (product name manufactured by Hitachi, Ltd.) *8'-12mm x 12m1 x 0805
Ni89 wt%-P11 wt% alloy of x*, amorphous foil (trade name manufactured by Japan Amorphous Metal Co., Ltd.) [Effects of the invention] According to the present invention, a silicon carbide ceramic sintered body, Cu or Cu alloy, can be joined directly without a brazing material, and by using an intermediate joining material, a joined body with greater high-temperature strength can be obtained.

Furthermore, when silicon carbide ceramics produced by the reaction sintering method are used, it has the advantage that it is easy to manufacture large products and the cost is low.

Claims (1)

Claims: (1) A silicon carbide ceramic-metal bonded body, characterized in that it is formed by bonding a silicon carbide ceramic containing silicon and Cu or a Cu alloy. (2) The silicon carbide ceramic-metal bonded body according to claim 1, wherein the silicon carbide ceramic containing silicon is a silicon carbide ceramic manufactured by a reaction sintering method. (3) The silicon carbide according to claim 1, wherein the silicon carbide ceramic and Cu or Cu alloy are bonded through at least one intermediate bonding layer made of a substance whose main constituent element is Cu or Ni. Ceramics-metal joint. (4) The silicon carbide ceramic-metal bonded body according to claim 3, wherein at least one of the intermediate bonding layers is a discontinuous contact member. (5) The silicon carbide ceramic-metal bonded body according to claim 4, wherein the discontinuous contact body is a powder, a foam, a porous sintered body, a foil, a fiber, or a reinforced composite. (6) The silicon carbide ceramic-metal bonded body according to claim 1, wherein the silicon carbide ceramic-metal bonded body is a semiconductor circuit board. (7) The silicon carbide ceramic-metal bonded body according to claim 1, wherein the silicon carbide ceramic-metal bonded body is a member for the first wall of a nuclear fusion reactor, a limiter, or a diverter.