JPS63239166A - Ceramic joined body - Google Patents
Ceramic joined bodyInfo
- Publication number
- JPS63239166A JPS63239166A JP7353587A JP7353587A JPS63239166A JP S63239166 A JPS63239166 A JP S63239166A JP 7353587 A JP7353587 A JP 7353587A JP 7353587 A JP7353587 A JP 7353587A JP S63239166 A JPS63239166 A JP S63239166A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- bonded body
- metal
- bonding
- amorphous alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 35
- 238000005219 brazing Methods 0.000 claims description 24
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 19
- 239000000945 filler Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- -1 Direct brazing Chemical class 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、セラミックス部材とセラミックス部材、ある
いはセラミックス部材と金属部材とを接合一体化してな
るセラミックス接合体に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a ceramic bonded body formed by bonding and integrating a ceramic member and a ceramic member, or a ceramic member and a metal member.
（従来の技術）
従来より、セラミックス部材の耐熱性、耐食性、耐型耗
性等の各種特性を活かし、かつセラミックス部材の脆く
て信頼性にかけるという欠点を補うために、セラミック
ス部材に金属部材を接合したり、同様にセラミックス部
材とセラミックス部材とを接合して利用するということ
がよく行なわれている。(Prior art) Traditionally, metal members have been added to ceramic members in order to take advantage of the various properties of ceramic members, such as heat resistance, corrosion resistance, and mold wear resistance, and to compensate for the drawbacks of ceramic members, such as their brittleness and poor reliability. It is common practice to bond ceramic members together, or to use ceramic members by bonding them together.
このようなセラミックス−セラミックス間やセラミック
ス−金属間の接合方法としては種々の方法が知られてお
り、例えば予めメタライズしたセラミックス部材を用い
て、Ｃｕ−Ａｇ系ろう等のろう材を用いて接合するメタ
ライズろう付は法や、接合すべき両者の間にＴｉやＺｒ
等の活性金属を添加して濡れ性を改善したＣ ｕ −Ａ
ｇ系ろう材を用いて接合する直接ろう付は法等が知ら
れている。Various methods are known for such bonding methods between ceramics and ceramics and between ceramics and metals, such as bonding using a brazing material such as a Cu-Ag based brazing material using pre-metallized ceramic members. Metallization brazing is a method that requires the use of Ti or Zr between the two to be joined.
Cu-A with improved wettability by adding active metals such as
Direct brazing, which uses a G-based brazing filler metal, is known as a direct brazing method.
特に融点の低い金属部材と接合する場合には、活性金属
を含むろう材にＳｎやＩΩ等を添加することにより融点
をさげたものを使用して接合したり、Ａ℃系やＡ、ｇ−
３ｉ系のろう材を用いて接合している。Particularly when joining metal members with a low melting point, it is recommended to use a brazing filler metal containing an active metal whose melting point has been lowered by adding Sn, IΩ, etc.
Joined using 3i brazing filler metal.
また、上述したＴｉやＺｒ等の活性金属を構造部材やイ
ンサート材として用い、さらにＮｉ等を介在させて直接
セラミックス部材と接合する方法も知られている。Furthermore, a method is also known in which active metals such as Ti and Zr described above are used as a structural member or an insert material, and are further bonded directly to a ceramic member with Ni or the like interposed therebetween.
（発明が解決しようとする問題点）
、ところで、上述した各種接合方法のうち、活性金属を
用いた直接ろう付は法は、一般によく用いられている方
法であるが、形成された接合層が低融点化合物であるこ
と等から高温において接合強度が低下すると−いう難点
があった。高温高強度という点では、Ｔ’ ｉ Ｒ？Ｚ
ｒ等の活性金属を用いて拡散接合により直接接合する
方法が優れているが、この方法は接合温度が比較的高い
という難点がある。(Problems to be Solved by the Invention) By the way, among the various bonding methods mentioned above, direct brazing using an active metal is a commonly used method, but the formed bonding layer Since it is a low melting point compound, it has the disadvantage that the bonding strength decreases at high temperatures. In terms of high temperature and high strength, T' i R? Z
Direct bonding by diffusion bonding using an active metal such as R is superior, but this method has the disadvantage that the bonding temperature is relatively high.
また、接合温度を６００℃程度まで下げなければならな
い必要がある時に使用されているＡＪ２系やＡぶ−Ｓｉ
系のろう材においても高温で強度が低下するという難点
があった。In addition, AJ2 series and Abu-Si are used when it is necessary to lower the junction temperature to about 600℃.
This type of brazing filler metal also has the disadvantage that its strength decreases at high temperatures.
本発明はこのような従来の事情に対処してなされたもの
ので、接合温度が比較的低く、しかも高温で高強度を有
するセラミックス接合体を提供することを目的とする。The present invention has been made in response to such conventional circumstances, and an object of the present invention is to provide a ceramic bonded body having a relatively low bonding temperature and high strength at high temperatures.
［発明の構成コ
（問題点を解決するための手段と作用）本発明のセラミ
ックス接合体は、セラミックス部材とセラミックス部材
、あるいはセラミックス部材と金属部材とが、その接合
すべき面の間に存在させた非晶質合金とｌＶａ族活性金
属とにより接合されてなることを特徴としている。[Structure of the Invention (Means and Effects for Solving Problems)] The ceramic bonded body of the present invention has a structure in which a ceramic member and a ceramic member, or a ceramic member and a metal member are present between the surfaces to be bonded. It is characterized by being bonded by an amorphous alloy and a lVa group active metal.
すなわち本発明は、被接合部材の接合すべき面の間に非
晶質合金とＴｉ等のｌＶａ族活性金属とを介在させ加熱
することにより、非晶質合金中の構成元素とＩＶ ａ族
活性金属とからなる中間接合層を形成させ、この中間接
合層により接合されているセラミックス接合体である。That is, in the present invention, by interposing an amorphous alloy and an IVa group active metal such as Ti between the surfaces to be joined of members to be joined and heating, the constituent elements in the amorphous alloy and the IVa group active metal are interposed and heated. This is a ceramic bonded body in which an intermediate bonding layer made of metal is formed and bonded by this intermediate bonding layer.
本発明に使用するＩＶａ族活性金属材としては、主にＴ
ｉが使用され、その形状としては箔状が好ましいが粉末
であってもさしつかえない。The IVa group active metal material used in the present invention is mainly T
i is used, and its shape is preferably foil-like, but powder may also be used.
また、本発明に使用する非晶質合金としては、Ｎｉ系非
晶質合金ろう材やＣｕ系非晶質合金ろう材等が挙げられ
、特に構成元素としてＰ’？Ｂ等のメタロイドを含有し
ているものが低融点であることから、低温で接合が可能
であり、また箔状をしているためインサート材として扱
いやすいことから好ましい、特に、Ｃｕ系非晶質合金の
うち、融点が６００°Ｃ程度のものは、接合温度を従来
の八ぶ系ろう材と同等とすることができるので、融点の
低い金属部材との接合の場合へように接合温度を高くで
きない場合に有効である。これらの非晶質合金としては
、例えばＮ１−Ｐ系、Ｎｉ−３ｉ−Ｂ系、Ｎ１−Ｃｒ−
Ｐ系、Ｃｕ −Ｎ Ｌ −Ｓ ｕ −Ｐ系等があげられ
、これらも箔や粉体として使用される。Further, examples of the amorphous alloy used in the present invention include Ni-based amorphous alloy brazing filler metal and Cu-based amorphous alloy brazing filler metal, with P'? Those containing metalloids such as B have a low melting point, so they can be joined at low temperatures, and are foil-shaped and easy to handle as insert materials. Among alloys, those with a melting point of about 600°C can have a joining temperature equal to that of conventional Yabu brazing filler metals, so the joining temperature can be set higher when joining metal parts with a lower melting point. Effective when this is not possible. Examples of these amorphous alloys include N1-P series, Ni-3i-B series, N1-Cr-
Examples include P type, Cu-N L -S u -P type, etc., and these are also used as foils and powders.
なお、非晶質合金としてＳｎ系の液体急冷凝固半田を用
いることもできるが、接合温度が低くて済む骨接合時間
を長くする必要がある。Note that Sn-based liquid rapidly solidified solder can be used as the amorphous alloy, but it is necessary to lengthen the bone bonding time, which requires a low bonding temperature.
そして、これらの非晶質合金とｌＶａ族活性金属とを使
用することによって、比較的低い温度で接合が可能にな
るとともに、接合界面に形成される接合中間層は、Ｔｉ
等のｌＶａ族活性金属を含む、例えば非晶質合金として
Ｐを含有するＮｉ系非晶質合金ろう材を使用し、ＩＶ
ａ族活性金属合金としてＴｉを使用した場合には、Ｎ
ｉ −’Ｔ’ ｉ系の高融点化合物を含んでおり、高温
においても強度の低下の少ないセラミックス接合体とな
る。By using these amorphous alloys and the lVa group active metal, it is possible to bond at a relatively low temperature, and the bonding intermediate layer formed at the bonding interface is made of Ti.
For example, using a Ni-based amorphous alloy brazing material containing P as the amorphous alloy,
When Ti is used as the group a active metal alloy, N
It contains an i-'T' i-based high melting point compound, resulting in a ceramic bonded body with little decrease in strength even at high temperatures.
本発明におけるセラミックス部材としては、アルミナ等
の酸化物系セラミックスや窒化ケイ素等の非酸化物系セ
ラミックスのいず・れも使用することができ、また金属
部材としては、鋼材等の￥Ｒ構造部材あってもよいし、
延性金属からなる応力緩衝層であってもよい。As the ceramic member in the present invention, any of oxide ceramics such as alumina and non-oxide ceramics such as silicon nitride can be used, and as the metal member, ¥R structural members such as steel materials can be used. There may be,
It may also be a stress buffer layer made of ductile metal.
本発明のセラミックス接合体は、例えば次のようにして
製造される。The ceramic bonded body of the present invention is manufactured, for example, as follows.
被接合部材間に上述したＮｉ系やＣｕ系の非晶質合金と
ＩＶ ａ族活性金属とを、例えば箔の状態で挿入し、真
空中や不活性ガス雰囲気中で使用した非晶質合金に適し
た加熱温度、例えばＮｉ系非晶質合金であれば９００℃
〜１１００℃、Ｃｕ系非晶質合金であれば６００°Ｃ〜
９００℃で加熱することにより目的とするセラミックス
接合体を得る。The above-mentioned Ni-based or Cu-based amorphous alloy and a group IV a active metal are inserted, for example, in the form of foil, between the members to be joined, and the amorphous alloy used in a vacuum or an inert gas atmosphere is heated. Appropriate heating temperature, e.g. 900°C for Ni-based amorphous alloys
~1100°C, 600°C for Cu-based amorphous alloys
The desired ceramic bonded body is obtained by heating at 900°C.
（実施例） 次に、本発明の実施例について説明する。(Example) Next, examples of the present invention will be described.
実施例１
第１図に示すように、窒化ケイ素を主成分とする１３１
ＩＸ １３＋ａｌＸ ５１０１日の２個のセラミックス
部材１の間に、厚さ １μｍｌのＴｉ箔２を中央にして
その両側面にＰ１１重量％−Ｎｉ残部の組成をもつ厚さ
３５μＩｎのニッケル系非晶質合金ろう材・ＨＢＦ ６
０（商品名、日本非晶質金属社製）３をそれぞれ配置し
て積層した。次いで、この積層物を真空中において約９
９０℃で約１０分間加熱を行なってセラミックス接合体
を得た。Example 1 As shown in FIG. 1, 131 containing silicon nitride as the main component
Between the two ceramic members 1 of IX 13 + al Brazing metal/HBF 6
0 (trade name, manufactured by Japan Amorphous Metal Co., Ltd.) 3 were arranged and laminated. Next, this laminate was placed in a vacuum for about 90 minutes.
Heating was performed at 90° C. for about 10 minutes to obtain a ceramic bonded body.
このようにして得たセラミックス接合体のせん断強度を
測定したところ、室温で２０ｋ（＋／−と良好な値を示
し、また６００°Ｃでは１６ｋｑ／ｍｄ、８００°Ｃで
は１１ｋｇ／ｉ１１と高温での接合強度の低下は小さい
ものであった。When we measured the shear strength of the ceramic bonded body obtained in this way, it showed a good value of 20k (+/-) at room temperature, and at high temperatures it was 16kq/md at 600°C and 11kg/i11 at 800°C. The decrease in bond strength was small.
比較例１
実施例１と同一の２個のセラミックス部材を使用して、
従来のＣｕ−Ａｇ−Ｔｉ系のろう材を用いて、８３０°
Ｃ１６分の加熱条件でセラミックス−セラミックス接合
体を作製し、このセラミックス接合体についてもぜん断
強度を測定した。Comparative Example 1 Using the same two ceramic members as in Example 1,
830° using conventional Cu-Ag-Ti brazing material
A ceramic-ceramic bonded body was produced under heating conditions of C16 minutes, and the shear strength of this ceramic bonded body was also measured.
第２図は、実施例１と比較例１のせん断強度と試験温度
の関係を示したグラフである。同図からも明らかなよう
に、この実施例のセラミックス接合体は、比較的低い接
合温度で接合でき、しがも接合体は高温まで接合強度の
低下の少ないものであることがわかる。FIG. 2 is a graph showing the relationship between shear strength and test temperature for Example 1 and Comparative Example 1. As is clear from the figure, the ceramic bonded body of this example can be bonded at a relatively low bonding temperature, and the bonded body shows little decrease in bonding strength even at high temperatures.
実施例２
Ｓｉ ７重量％−３２重１％−Ｎｉ残部の組成をもつ
厚さ３５μｍのニッケル系非晶質合金ろう材・ＭＢＦ
３５ （商品名、日本非晶質金属社製）と厚さ２μｌの
Ｔｉ箔を用いて、実施例１と同一の窒化ケイ素製セラミ
ックス部材どおしを、真空中、１０４０°Ｃ２１０分間
の加熱条件で接合した。Example 2 A nickel-based amorphous alloy brazing filler metal/MBF with a thickness of 35 μm having a composition of 7% Si by weight - 1% by weight 32% Ni and the balance
35 (trade name, manufactured by Japan Amorphous Metals Co., Ltd.) and a 2 μl thick Ti foil, the same silicon nitride ceramic members as in Example 1 were heated at 1040°C for 210 minutes in a vacuum. It was joined with
得られたセラミックス接合体のせん断強度を測定したと
ころ、室温で２２ｋｑ／ｍ（と良好な値を示し、また６
００°Ｃでは１８ｋｇ／ｍｄ、８００°Ｃでは１２ｋ（
１／、イと高温での接合強度の低下は小さいものであっ
た。When the shear strength of the obtained ceramic bonded body was measured, it showed a good value of 22 kq/m (60 kq/m) at room temperature.
18kg/md at 00°C, 12k/md at 800°C (
The decrease in bonding strength at high temperatures of 1/A was small.
実施例３
窒化ケイ素を主成分とするセラミックス部材と低炭素鋼
・３４５Ｃ製金属部材との間に、厚さ１μｔのＴｉ箔を
中央にし、その両側面に厚さ２５μｌのＮｉ５．７重量
％−３ｎ９．７重量％−Ｐ ７．０重量％−Ｃ１」残
部の組成をもつＣｕ系非晶質合金ろう材ＨＢＦ ２００
５ （商品名、日本非晶質金属社製）をそれぞれ配置し
積層して、真空中、６７５℃で３０分間加熱してセラミ
ックス接合体を作製した。Example 3 A Ti foil with a thickness of 1 μt was placed in the center between a ceramic member mainly composed of silicon nitride and a metal member made of low carbon steel and 345C, and 5.7% by weight of Ni with a thickness of 25 μl was placed on both sides of the Ti foil. Cu-based amorphous alloy brazing filler metal HBF 200 with the following composition: 3n9.7% by weight-P 7.0% by weight-C1
5 (trade name, manufactured by Nippon Amorphous Metal Co., Ltd.) were arranged and laminated, and heated in a vacuum at 675° C. for 30 minutes to produce a ceramic bonded body.
得られたセラミックス接合体のせん断強度は室温で１０
ｋ（１／１）であり、４点曲げ強度と温度との関係は第
３図のグラフに示す通りであった。The shear strength of the obtained ceramic bonded body was 10 at room temperature.
k (1/1), and the relationship between the four-point bending strength and temperature was as shown in the graph of FIG.
比較例２
従来のＡＪ２系のろう材を用い、実施例２と接合条件を
同じにしてろう付けしてセラミックス接合体を作製し、
得られたセラミックス接合体のせん断強度は室温で９ｋ
ｇ／−であった、また、４点曲げ強度と温度との関係は
第３図のグラフに示す通りであった。Comparative Example 2 A ceramic bonded body was produced by brazing using a conventional AJ2-based brazing material under the same bonding conditions as in Example 2.
The shear strength of the obtained ceramic bonded body is 9k at room temperature.
g/-, and the relationship between the four-point bending strength and temperature was as shown in the graph of FIG.
同図からも明らかなように、従来のＡＪ２系ろう材によ
るセラミックス接合体は３００°Ｃ程度より強度の低下
が始まるが、本発明のセラミックス接合体は４００ ”
Ｃ程度まで十分な強度を有している。As is clear from the figure, the strength of the ceramic bonded body using the conventional AJ2 brazing material starts to decrease at about 300°C, but the ceramic bonded body of the present invention starts to lose strength at about 300°C.
It has sufficient strength up to C level.
し発明の効果］
以上説明したように本発明のセラミックス接合体によれ
ば、ＩＶａ族活性金属と非晶質合金を使用して接合して
いるので、接合温度が比較的低くてすみ、さらに高温に
おける接合強度の低下も小さいものである。[Effects of the Invention] As explained above, according to the ceramic bonded body of the present invention, since the group IVa active metal and the amorphous alloy are used for bonding, the bonding temperature can be relatively low; The decrease in bonding strength is also small.
第１図は本発明のセラミックス接合体の接合前の状態を
示す斜視図、第２図および第３図は本発明の実施例のセ
ラミックス接合体と従来のセラミックス接合体の、接合
強度と温度との関係をそれぞれ示すグラフである。
１・・・・・・・・・セラミックス部材２・・・・・・
・・・ＩＶ ａ族活性金属材３・・・・・・・・・非晶
質ろう打
出願人 株式会社 東芝
代理人 弁理士 須 山 佐 −
第１図
ジ温壇 （・Ｃ）
温／ｌ （℃〕
第３図FIG. 1 is a perspective view showing the state of the ceramic bonded body of the present invention before bonding, and FIGS. 2 and 3 show the bonding strength and temperature of the ceramic bonded body of the embodiment of the present invention and the conventional ceramic bonded body. It is a graph showing the relationship between the two. 1... Ceramic member 2...
・・・IV Group a active metal material 3・・・・・・・・・Amorphous brazing Applicant Toshiba Corporation Patent attorney Sa Suyama - Figure 1 Jiondan (・C) Wen/l (℃) Figure 3
Claims (4)
セラミックス部材と金属部材とが、その接合すべき面の
間に存在させた非晶質合金とIVａ族活性金属とにより接
合されてなることを特徴とするセラミックス接合体。(1) Ceramics characterized in that a ceramic member and a ceramic member, or a ceramic member and a metal member are joined by an amorphous alloy and a group IVa active metal that are present between the surfaces to be joined. zygote.
いるＮｉ系非晶質合金ろう材である特許請求の範囲第１
項記載のセラミックス接合体。(2) The amorphous alloy is a Ni-based amorphous alloy brazing filler metal containing at least P or B.
Ceramic bonded body described in section.
いるＣｕ系非晶質合金ろう材である特許請求の範囲第１
項記載のセラミックス接合体。(3) The amorphous alloy is a Cu-based amorphous alloy brazing material containing at least P or B.
Ceramic bonded body described in section.
１項ないし第３項のいずれか１項記載のセラミックス接
合体。(4) The ceramic joined body according to any one of claims 1 to 3, wherein the group IVa active metal is Ti.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7353587A JPS63239166A (en) | 1987-03-27 | 1987-03-27 | Ceramic joined body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7353587A JPS63239166A (en) | 1987-03-27 | 1987-03-27 | Ceramic joined body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63239166A true JPS63239166A (en) | 1988-10-05 |
Family
ID=13521020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7353587A Pending JPS63239166A (en) | 1987-03-27 | 1987-03-27 | Ceramic joined body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63239166A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2594475B2 (en) * | 1990-04-16 | 1997-03-26 | 電気化学工業株式会社 | Ceramic circuit board |
| JPH09181423A (en) * | 1990-04-16 | 1997-07-11 | Denki Kagaku Kogyo Kk | Ceramic circuit board |
| CN1043323C (en) * | 1996-06-25 | 1999-05-12 | 吉林工业大学 | Solder for ceramic soldering |
| CN1101361C (en) * | 1997-03-12 | 2003-02-12 | 太原理工大学 | Glow brazing process for welding ceramic and metal |
| JP2015057847A (en) * | 2014-11-07 | 2015-03-26 | 三菱マテリアル株式会社 | Method for manufacturing substrate for power module |
| WO2015122446A1 (en) * | 2014-02-12 | 2015-08-20 | 三菱マテリアル株式会社 | Copper/ceramic bond and power module substrate |
| JP2015177045A (en) * | 2014-03-14 | 2015-10-05 | 三菱マテリアル株式会社 | Copper/ceramic assembly and power module substrate |
| US10103035B2 (en) | 2014-02-12 | 2018-10-16 | Mitsubishi Materials Corporation | Copper-ceramic bonded body and power module substrate |
| US10199237B2 (en) | 2013-03-18 | 2019-02-05 | Mitsubishi Materials Corporation | Method for manufacturing bonded body and method for manufacturing power-module substrate |
-
1987
- 1987-03-27 JP JP7353587A patent/JPS63239166A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2594475B2 (en) * | 1990-04-16 | 1997-03-26 | 電気化学工業株式会社 | Ceramic circuit board |
| JPH09181423A (en) * | 1990-04-16 | 1997-07-11 | Denki Kagaku Kogyo Kk | Ceramic circuit board |
| CN1043323C (en) * | 1996-06-25 | 1999-05-12 | 吉林工业大学 | Solder for ceramic soldering |
| CN1101361C (en) * | 1997-03-12 | 2003-02-12 | 太原理工大学 | Glow brazing process for welding ceramic and metal |
| US10199237B2 (en) | 2013-03-18 | 2019-02-05 | Mitsubishi Materials Corporation | Method for manufacturing bonded body and method for manufacturing power-module substrate |
| WO2015122446A1 (en) * | 2014-02-12 | 2015-08-20 | 三菱マテリアル株式会社 | Copper/ceramic bond and power module substrate |
| US10103035B2 (en) | 2014-02-12 | 2018-10-16 | Mitsubishi Materials Corporation | Copper-ceramic bonded body and power module substrate |
| JP2015177045A (en) * | 2014-03-14 | 2015-10-05 | 三菱マテリアル株式会社 | Copper/ceramic assembly and power module substrate |
| JP2015057847A (en) * | 2014-11-07 | 2015-03-26 | 三菱マテリアル株式会社 | Method for manufacturing substrate for power module |
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