JPS61224489A - Manufacture of head for ion flow recording - Google Patents
Manufacture of head for ion flow recordingInfo
- Publication number
- JPS61224489A JPS61224489A JP6516885A JP6516885A JPS61224489A JP S61224489 A JPS61224489 A JP S61224489A JP 6516885 A JP6516885 A JP 6516885A JP 6516885 A JP6516885 A JP 6516885A JP S61224489 A JPS61224489 A JP S61224489A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- electrode
- ion flow
- flow recording
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Circuit Boards (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ファクシミリ、プリンター等の書き込み用ヘ
ッドとして用いるイオンフロー記録用ヘッドに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an ion flow recording head used as a writing head in facsimiles, printers, and the like.
従来の技術
イオンフロー記録用ヘッド１は第２図に示すように絶縁
板２の一面に共通電極３を形成し、絶縁板２の他面に微
細電極４を形成し、これら共通電極３、絶縁板２及び微
細電極４にφ０．１〜φ０・３鱈程度の貫通孔６を形成
している。而してイオン源６でイオンを発生させ、イオ
ンフロー記録用ヘッド１の共通電極３と微細電極４にか
かる電圧により１貫通孔６をブロック状態にしてイオン
の流れを制御し、ドラム７上の誘電体層８に潜像を形成
することができる。A conventional ion flow recording head 1 has a common electrode 3 formed on one side of an insulating plate 2 and a fine electrode 4 formed on the other side of the insulating plate 2, as shown in FIG. A through hole 6 having a diameter of about 0.1 to 0.3 mm is formed in the plate 2 and the microelectrode 4. The ion source 6 generates ions, and the voltage applied to the common electrode 3 and the fine electrode 4 of the ion flow recording head 1 blocks the 1 through hole 6 to control the flow of ions. A latent image can be formed on the dielectric layer 8.
従来、上記イオンフロー記録用ヘッド１を製造するには
第４図（Ａ）に示すように絶縁板２の一面に微細電極４
を形成する。この微細電極４は第３図に示すようにリン
グ状部９を有し、このリング状部９はその中心に８０μ
ｍ程度の小孔１ｏを有している。絶縁板２の他面に共通
電極３を形成する。Conventionally, in order to manufacture the ion flow recording head 1, a fine electrode 4 was formed on one surface of an insulating plate 2, as shown in FIG. 4(A).
form. This fine electrode 4 has a ring-shaped part 9 as shown in FIG. 3, and this ring-shaped part 9 has an 80μ
It has a small hole 1o of about m. A common electrode 3 is formed on the other surface of the insulating plate 2.
然る後、ドリル１１を微細電極４の中心の小孔１ｏの軸
心に合わせ、このドリル１１を前進させることにより第
４図の）に示すように貫通孔５を形成していた。Thereafter, the drill 11 was aligned with the axis of the small hole 1o at the center of the microelectrode 4, and the drill 11 was moved forward to form the through hole 5 as shown in FIG. 4).
発明が解決しようとする問題点
しかしながらドリル１１による孔明は作業の際に微細電
極４のリング状部９にパリ１２が生じると共に共通電極
３側に大きなパリ１３が生じ、これらのパリ１２．１３
により短絡、スパーク、特性不良を生じる。また多数の
貫通孔５を１個宛加工するため、加工時間が長くかかり
、しかもドリル１１の摩耗、刃こぼれ等により孔形状に
もバラツキが多い等の問題点があった。Problems to be Solved by the Invention However, when drilling with the drill 11, holes 12 are generated in the ring-shaped portion 9 of the fine electrode 4, and large holes 13 are also generated on the common electrode 3 side.
This causes short circuits, sparks, and poor characteristics. Further, since a large number of through holes 5 are machined one by one, the machining time is long, and there are also problems in that the shape of the hole varies widely due to wear of the drill 11, chipping of the cutting edge, etc.
そこで本発明は、短絡、スパーク、特性不良を防止する
ことができ、また加工時間を短縮することができ、しか
も孔形状のバラツキを少なくすることができるようにし
たイオンフロー記録用ヘッドの製造方法を提供すること
を目的とするものである。Therefore, the present invention provides a method for manufacturing an ion flow recording head that can prevent short circuits, sparks, and characteristic defects, shorten processing time, and reduce variations in hole shape. The purpose is to provide the following.
問題点を解決するための手段
そして上記問題点を解決する本発明の技術的手段は、エ
ツチング加工が可能な絶縁材の両面に導体層を形成し、
一方の導体層にエツチングにより小孔を有する電極を形
成し、この電極の外面に小孔を残してフォトレジストを
形成し、電極の小孔から絶縁材にエツチングにより孔を
形成し、この孔に続いて電極の反対側の導体層にエツチ
ングにより孔を形成して貫通孔を形成することを特徴と
するものである。Means for solving the problems and technical means of the present invention for solving the above problems are to form conductor layers on both sides of an insulating material that can be etched,
An electrode with a small hole is formed in one conductor layer by etching, a photoresist is formed by leaving a small hole on the outer surface of this electrode, a hole is formed in the insulating material by etching from the small hole in the electrode, and a hole is formed in the insulating material by etching. Subsequently, a hole is formed in the conductor layer on the opposite side of the electrode by etching to form a through hole.
作用
本発明は、ヘッドの貫通孔の形成にエツチング加工を利
用するためパリのない多数の均一な貫通孔の同時加工を
簡単に行うことができる。Function: Since the present invention uses etching to form the through-holes of the head, it is possible to easily form a large number of uniform through-holes without burrs at the same time.
実施例 以下、本発明の実施例を図面に基いて詳細に説明する。Example Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図（ム）に示すようにエツチング可能な絶縁材２１
０両面の全面に導体層２２を形成し、各導体層２２の外
面にフォトレジスト２３を塗布する。次に一方の導体層
２２のエツチングを行うことにより第１図（Ｂ）に示す
ようにリング状部２４を有する微細電極２６を形成する
と共にフォトレジスト２３を剥離する。次に第１図（Ｃ
）に示すように絶縁材２１と微細電極２６の外面に微細
電極２６のリング状部２４の孔２６を残してエツチング
液に耐え得るフォトレジスト２７を塗布し、他面の導体
層２２の外面にも同様のフォトレジスト２７を塗布する
。次に第１図（Ｄ）に示すように微細電極２６のリング
状部２４の孔２６より絶縁材２１にエツチングを行い、
絶縁材２１に孔２８を形成する。次に第１図（ＩＫ）に
示すように微細電極２６のリング状部２４の孔２６及び
絶縁材２１の孔２Ｂより導体層２２にエツチングを行い
、導体層２２に孔２９を形成して共通電極３ｏを形成す
ると共に７オトレジスト２７を剥離することにより第１
図（７）に示すように貫通孔３１を形成することができ
る。Etchable insulation material 21 as shown in FIG.
A conductor layer 22 is formed on the entire surface of both surfaces, and a photoresist 23 is applied to the outer surface of each conductor layer 22. Next, by etching one of the conductor layers 22, a fine electrode 26 having a ring-shaped portion 24 is formed as shown in FIG. 1(B), and the photoresist 23 is peeled off. Next, Figure 1 (C
), a photoresist 27 that can withstand the etching solution is coated on the outer surface of the insulating material 21 and the microelectrode 26, leaving the holes 26 of the ring-shaped portion 24 of the microelectrode 26, and then on the outer surface of the conductor layer 22 on the other side. A similar photoresist 27 is also applied. Next, as shown in FIG. 1(D), the insulating material 21 is etched through the hole 26 of the ring-shaped part 24 of the microelectrode 26.
A hole 28 is formed in the insulating material 21. Next, as shown in FIG. 1 (IK), the conductor layer 22 is etched through the hole 26 of the ring-shaped part 24 of the microelectrode 26 and the hole 2B of the insulating material 21, and a hole 29 is formed in the conductor layer 22 to form a common hole. By forming the electrode 3o and peeling off the photoresist 27, the first
A through hole 31 can be formed as shown in Figure (7).
従ってエツチング加工によりパリがなく、孔形状にバラ
ツキが少ない貫通孔を簡単に同時加工することができる
。Therefore, by etching, through-holes can be easily and simultaneously formed without any burrs and with little variation in hole shape.
なお本発明は、予め共通電極を形成し、それを用いて微
細電極に通ずる貫通孔を形成しても良い。Note that in the present invention, a common electrode may be formed in advance and a through hole communicating with the microelectrode may be formed using the common electrode.
さらに上記実施例では貫通孔１ケの場合について説明し
たが、貫通孔は複数個設けても良く、またこの複数個の
貫通孔に共通した電極を設けても良いことはもちろんで
ある。Further, in the above embodiment, the case where there is only one through hole has been described, but it goes without saying that a plurality of through holes may be provided, and a common electrode may be provided for the plurality of through holes.
発明の効果
以上、要するに本発明は、導体層及び絶縁材をエツチン
グで加工することによりパリがなく、バラツキの少ない
貫通孔を形成することができ、スパーク、短絡、特性不
良を防止することができる。More than the effects of the invention, in short, the present invention can form through holes with no burrs and little variation by etching the conductor layer and the insulating material, and can prevent sparks, short circuits, and characteristic defects. .
またエツチングで多数の貫通孔を同時に加工することが
できるので、作業時間を短縮することができる。Furthermore, since a large number of through holes can be processed simultaneously by etching, the working time can be shortened.
第１図（ム）乃至めは本発明のイオンフロー記録用ヘッ
ドの製造方法の一実施例を示す断面図、第２図はイオン
フロー記録の原理説明図、第３図は従来のイオンフロー
記録用ヘッドに用いる微細電極の平面図、第４図（＆）
及び（Ｂ）は従来のイオンフロー記録用ヘッドの製造方
法を示す断面図である。
２１・・・・・・絶縁材、２２・・・・・・導体層、２
３・・・・・・フォトレジスト、２４・・・・・・リン
グ状部、２６・・・・・・微細電極、２６・・・・・・
孔、２７・・・・・・フォトレジスト、２８・・・・・
・孔、２９・・・・・・孔、３０・・・・・・共通電極
、３１・・・・・・貫通孔。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名″
−〇ヌ
ＣＱ ％−０口
（
Ｎｊ ”−＼１第２図
第３図Figures 1 (m) to 1 are cross-sectional views showing an embodiment of the method for manufacturing an ion flow recording head of the present invention, Figure 2 is a diagram illustrating the principle of ion flow recording, and Figure 3 is a conventional ion flow recording method. Plan view of the microelectrode used in the head, Figure 4 (&)
and (B) are cross-sectional views showing a method of manufacturing a conventional ion flow recording head. 21... Insulating material, 22... Conductor layer, 2
3...Photoresist, 24...Ring-shaped portion, 26...Fine electrode, 26...
Hole, 27...Photoresist, 28...
- Hole, 29...hole, 30...common electrode, 31...through hole. Name of agent: Patent attorney Toshio Nakao and 1 other person”
−〇nu
CQ %-0 units
(Nj ”-\1Figure 2Figure 3
Claims (1)
、一方の導体層にエッチングにより小孔を有する電極を
形成し、この電極の外面に小孔を残してフォトレジスト
を形成し、電極の小孔から絶縁材にエッチングにより孔
を形成し、この孔より続いて電極の反対側の導体層にエ
ッチングにより孔を形成して貫通孔を形成することを特
徴とするイオンフロー記録用ヘッドの製造方法。Conductor layers are formed on both sides of an insulating material that can be etched, an electrode with small holes is formed on one of the conductor layers by etching, and a photoresist is formed with small holes left on the outer surface of the electrode. Manufacture of an ion flow recording head characterized by forming a hole in an insulating material by etching from a small hole, and subsequently forming a hole in a conductive layer on the opposite side of an electrode to form a through hole. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065168A JPH0667642B2 (en) | 1985-03-29 | 1985-03-29 | Ion flow recording head manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065168A JPH0667642B2 (en) | 1985-03-29 | 1985-03-29 | Ion flow recording head manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61224489A true JPS61224489A (en) | 1986-10-06 |
| JPH0667642B2 JPH0667642B2 (en) | 1994-08-31 |
Family
ID=13279084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065168A Expired - Fee Related JPH0667642B2 (en) | 1985-03-29 | 1985-03-29 | Ion flow recording head manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0667642B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025552A (en) * | 1988-10-11 | 1991-06-25 | Olympus Optical Co., Ltd. | Method of manufacturing ion current recording head |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142551A (en) * | 1980-04-09 | 1981-11-06 | Konishiroku Photo Ind Co Ltd | Production of ion modulating electrode |
-
1985
- 1985-03-29 JP JP60065168A patent/JPH0667642B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142551A (en) * | 1980-04-09 | 1981-11-06 | Konishiroku Photo Ind Co Ltd | Production of ion modulating electrode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025552A (en) * | 1988-10-11 | 1991-06-25 | Olympus Optical Co., Ltd. | Method of manufacturing ion current recording head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0667642B2 (en) | 1994-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |