JPS61222010A - 平坦化方法 - Google Patents
平坦化方法Info
- Publication number
- JPS61222010A JPS61222010A JP60062500A JP6250085A JPS61222010A JP S61222010 A JPS61222010 A JP S61222010A JP 60062500 A JP60062500 A JP 60062500A JP 6250085 A JP6250085 A JP 6250085A JP S61222010 A JPS61222010 A JP S61222010A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- insulating layer
- etching
- ion
- incidence angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000005530 etching Methods 0.000 claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000000992 sputter etching Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000696 magnetic material Substances 0.000 description 6
- 229910000702 sendust Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Magnetic Heads (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062500A JPS61222010A (ja) | 1985-03-27 | 1985-03-27 | 平坦化方法 |
| US06/843,416 US4662985A (en) | 1985-03-27 | 1986-03-24 | Method of smoothing out an irregular surface of an electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062500A JPS61222010A (ja) | 1985-03-27 | 1985-03-27 | 平坦化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222010A true JPS61222010A (ja) | 1986-10-02 |
| JPH0546612B2 JPH0546612B2 (enrdf_load_stackoverflow) | 1993-07-14 |
Family
ID=13201946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062500A Granted JPS61222010A (ja) | 1985-03-27 | 1985-03-27 | 平坦化方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222010A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188812A (ja) * | 1987-01-30 | 1988-08-04 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPH01230254A (ja) * | 1988-03-10 | 1989-09-13 | Sanyo Electric Co Ltd | 平坦化方法 |
| JP2007511918A (ja) * | 2003-11-18 | 2007-05-10 | エフ イー アイ カンパニ | 構造部のミル処理断面の局部的変化を制御する方法および装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104718A (ja) * | 1982-12-08 | 1984-06-16 | Comput Basic Mach Technol Res Assoc | 薄膜磁気ヘツドの製造方法 |
| JPS59112416A (ja) * | 1982-12-20 | 1984-06-28 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜ヘツドの製造方法 |
-
1985
- 1985-03-27 JP JP60062500A patent/JPS61222010A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104718A (ja) * | 1982-12-08 | 1984-06-16 | Comput Basic Mach Technol Res Assoc | 薄膜磁気ヘツドの製造方法 |
| JPS59112416A (ja) * | 1982-12-20 | 1984-06-28 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜ヘツドの製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63188812A (ja) * | 1987-01-30 | 1988-08-04 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPH01230254A (ja) * | 1988-03-10 | 1989-09-13 | Sanyo Electric Co Ltd | 平坦化方法 |
| JP2007511918A (ja) * | 2003-11-18 | 2007-05-10 | エフ イー アイ カンパニ | 構造部のミル処理断面の局部的変化を制御する方法および装置 |
| US8163145B2 (en) | 2003-11-18 | 2012-04-24 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
| US9852750B2 (en) | 2003-11-18 | 2017-12-26 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0546612B2 (enrdf_load_stackoverflow) | 1993-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |