JPS61215905A - 位置検出装置 - Google Patents

位置検出装置

Info

Publication number
JPS61215905A
JPS61215905A JP60057890A JP5789085A JPS61215905A JP S61215905 A JPS61215905 A JP S61215905A JP 60057890 A JP60057890 A JP 60057890A JP 5789085 A JP5789085 A JP 5789085A JP S61215905 A JPS61215905 A JP S61215905A
Authority
JP
Japan
Prior art keywords
light
beams
reference signal
frequency
phase difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60057890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0575044B2 (enrdf_load_stackoverflow
Inventor
Nobutaka Umagome
伸貴 馬込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kogaku KK filed Critical Nippon Kogaku KK
Priority to JP60057890A priority Critical patent/JPS61215905A/ja
Priority to US06/840,880 priority patent/US4710026A/en
Publication of JPS61215905A publication Critical patent/JPS61215905A/ja
Priority to US07/627,925 priority patent/USRE34010E/en
Publication of JPH0575044B2 publication Critical patent/JPH0575044B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60057890A 1985-03-22 1985-03-22 位置検出装置 Granted JPS61215905A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60057890A JPS61215905A (ja) 1985-03-22 1985-03-22 位置検出装置
US06/840,880 US4710026A (en) 1985-03-22 1986-03-18 Position detection apparatus
US07/627,925 USRE34010E (en) 1985-03-22 1990-12-17 Position detection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60057890A JPS61215905A (ja) 1985-03-22 1985-03-22 位置検出装置

Publications (2)

Publication Number Publication Date
JPS61215905A true JPS61215905A (ja) 1986-09-25
JPH0575044B2 JPH0575044B2 (enrdf_load_stackoverflow) 1993-10-19

Family

ID=13068580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60057890A Granted JPS61215905A (ja) 1985-03-22 1985-03-22 位置検出装置

Country Status (1)

Country Link
JP (1) JPS61215905A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274216A (ja) * 1986-05-23 1987-11-28 Nippon Telegr & Teleph Corp <Ntt> 微小変位測定方法および微小変位測定装置
EP0313681A1 (en) * 1987-10-30 1989-05-03 Ibm Deutschland Gmbh Phase-sensitive interferometric mask-wafer alignment
JPH01255222A (ja) * 1988-04-05 1989-10-12 Toshiba Corp Ｔｔｌアライメント装置
US5164789A (en) * 1990-11-09 1992-11-17 Hitachi, Ltd. Method and apparatus for measuring minute displacement by subject light diffracted and reflected from a grating to heterodyne interference
US5488230A (en) * 1992-07-15 1996-01-30 Nikon Corporation Double-beam light source apparatus, position detecting apparatus and aligning apparatus
US5942357A (en) * 1996-05-24 1999-08-24 Nikon Corporation Method of measuring baseline amount in a projection exposure apparatus
US6242754B1 (en) 1995-02-01 2001-06-05 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US7106444B2 (en) 1999-03-24 2006-09-12 Nikon Corporation Position measuring device, position measurement method, exposure apparatus, exposure method, and superposition measuring device and superposition measurement method
CN102566301A (zh) * 2010-11-30 2012-07-11 Asml荷兰有限公司 测量方法、设备和衬底
US8693006B2 (en) 2005-06-28 2014-04-08 Nikon Corporation Reflector, optical element, interferometer system, stage device, exposure apparatus, and device fabricating method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3891321A (en) * 1972-08-21 1975-06-24 Leitz Ernst Gmbh Optical method and apparatus for measuring the relative displacement of a diffraction grid
JPS52154369A (en) * 1976-06-17 1977-12-22 Philips Nv Method of positioning mask pattern and apparatus therefor
JPS5938521A (ja) * 1982-08-25 1984-03-02 Mitsui Eng & Shipbuild Co Ltd 含窒素化合物含有ガスの焼却処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3891321A (en) * 1972-08-21 1975-06-24 Leitz Ernst Gmbh Optical method and apparatus for measuring the relative displacement of a diffraction grid
JPS52154369A (en) * 1976-06-17 1977-12-22 Philips Nv Method of positioning mask pattern and apparatus therefor
JPS5938521A (ja) * 1982-08-25 1984-03-02 Mitsui Eng & Shipbuild Co Ltd 含窒素化合物含有ガスの焼却処理方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274216A (ja) * 1986-05-23 1987-11-28 Nippon Telegr & Teleph Corp <Ntt> 微小変位測定方法および微小変位測定装置
EP0313681A1 (en) * 1987-10-30 1989-05-03 Ibm Deutschland Gmbh Phase-sensitive interferometric mask-wafer alignment
JPH01255222A (ja) * 1988-04-05 1989-10-12 Toshiba Corp Ｔｔｌアライメント装置
US5164789A (en) * 1990-11-09 1992-11-17 Hitachi, Ltd. Method and apparatus for measuring minute displacement by subject light diffracted and reflected from a grating to heterodyne interference
US5488230A (en) * 1992-07-15 1996-01-30 Nikon Corporation Double-beam light source apparatus, position detecting apparatus and aligning apparatus
US6242754B1 (en) 1995-02-01 2001-06-05 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US6677601B2 (en) 1995-02-01 2004-01-13 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US7053390B2 (en) 1995-02-01 2006-05-30 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US7109508B2 (en) 1995-02-01 2006-09-19 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US5942357A (en) * 1996-05-24 1999-08-24 Nikon Corporation Method of measuring baseline amount in a projection exposure apparatus
US7106444B2 (en) 1999-03-24 2006-09-12 Nikon Corporation Position measuring device, position measurement method, exposure apparatus, exposure method, and superposition measuring device and superposition measurement method
US8693006B2 (en) 2005-06-28 2014-04-08 Nikon Corporation Reflector, optical element, interferometer system, stage device, exposure apparatus, and device fabricating method
CN102566301A (zh) * 2010-11-30 2012-07-11 Asml荷兰有限公司 测量方法、设备和衬底
US10151987B2 (en) 2010-11-30 2018-12-11 Asml Netherlands B.V. Measuring method, apparatus and substrate

Also Published As

Publication number Publication date
JPH0575044B2 (enrdf_load_stackoverflow) 1993-10-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term