JPS61214585A - Photocoupling semiconductor device - Google Patents
Photocoupling semiconductor deviceInfo
- Publication number
- JPS61214585A JPS61214585A JP60056512A JP5651285A JPS61214585A JP S61214585 A JPS61214585 A JP S61214585A JP 60056512 A JP60056512 A JP 60056512A JP 5651285 A JP5651285 A JP 5651285A JP S61214585 A JPS61214585 A JP S61214585A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- path material
- light
- optical path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920002050 silicone resin Polymers 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 20
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 4
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 2
- 229920006026 co-polymeric resin Polymers 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野）
本発明は半導体発光素子と半導体受光素子とを同一の外
囲器内に封止すると共に、両者を電気的には絶縁し且つ
光学的に結合した光結合半導体装置、特に、一般にフォ
トアイソレータ（通称フォトカプラ）と称される光結合
半導体装置の改良に関する。Detailed Description of the Invention (Technical Field of the Invention) The present invention seals a semiconductor light emitting device and a semiconductor light receiving device in the same envelope, electrically insulating them and optically coupling them. The present invention relates to improvements in optically coupled semiconductor devices, particularly optically coupled semiconductor devices generally referred to as photoisolators (commonly known as photocouplers).
（発明の技術的背景）
第２図は従来の代表的なフォトアイソレータの構造を示
す断面図である。同図において、１は発光素子用リード
である。該リード１には半導体発光素子２がマウントさ
れ、該発光素子には図示しないワイヤボンディングが施
されている。３は受光素子用リードで、該リードには半
導体受光素子４がマウントされ、且つ図示しないワイヤ
ボンディングが施されている。図示のように発光素子２
および受光素子４は対向して配置され、両素子間には透
明な絶縁性フィルム５が介在されている。(Technical Background of the Invention) FIG. 2 is a sectional view showing the structure of a typical conventional photoisolator. In the figure, 1 is a lead for a light emitting element. A semiconductor light emitting element 2 is mounted on the lead 1, and wire bonding (not shown) is applied to the light emitting element. Reference numeral 3 denotes a lead for a light receiving element, on which a semiconductor light receiving element 4 is mounted and wire bonding (not shown) is performed. Light emitting element 2 as shown
The light receiving elements 4 are arranged facing each other, and a transparent insulating film 5 is interposed between both elements.
そして、該フィルム５が介在された状態で前記発光素子
２および受光素子４間の空隙は透明なシリコーン樹脂層
６で満たされ、このシリコーン樹脂層により画素子２，
４は光学的に結合されている。Then, with the film 5 interposed, the gap between the light emitting element 2 and the light receiving element 4 is filled with a transparent silicone resin layer 6, and this silicone resin layer allows the pixel elements 2,
4 is optically coupled.
更に、その外側はトランスファー成形されたエポキシ樹
脂層７で封止され、前記発光素子用リード１および受光
素子用リード３は夫々エポキシ樹脂層７の対向側壁から
外方に延出されて下方に折曲げられている。Further, the outside thereof is sealed with a transfer-molded epoxy resin layer 7, and the light-emitting element lead 1 and the light-receiving element lead 3 are respectively extended outward from the opposing side walls of the epoxy resin layer 7 and folded downward. It's bent.
上記構造からなる従来のオプトアイソレータにおいて、
絶縁性フィルム５は発光素子および受光素子間の絶縁耐
圧を向上させるために用いられるもので、通常は第２図
（Ｂ）に示すように四弗化エチレンと六弗化プロピレン
との共重合体樹脂（以下ＦＥＰ樹脂と略称する）からな
る単層膜が用いられている。周知のようにＦＥＰ等のフ
ッ素樹脂は優れた絶縁破壊特性を有しており、その単層
膜６を介在させることで、オプトアイソレータの絶縁耐
圧は平均３〜４ ｋＶ内向上ることが実験により明かに
されている。In the conventional opto-isolator with the above structure,
The insulating film 5 is used to improve the dielectric strength between the light emitting element and the light receiving element, and is usually made of a copolymer of tetrafluoroethylene and hexafluoropropylene as shown in FIG. 2(B). A single layer film made of resin (hereinafter abbreviated as FEP resin) is used. As is well known, fluororesins such as FEP have excellent dielectric breakdown properties, and experiments have shown that by interposing a single layer 6 of fluororesin, the dielectric strength voltage of the opto-isolator can be improved by an average of 3 to 4 kV. It has been revealed.
ところが、ＦＥＰ樹脂等のフッ素樹脂はシリコーン樹脂
に対する濡れ性が悪いことから、上記従来のオプトアイ
ソレータでは光路を形成するシリコーン樹脂層７と絶縁
性フィルム５の密着性にバラツキを生じ易く、このため
次のような問題が発生していた。However, since fluororesins such as FEP resins have poor wettability with silicone resins, in the conventional opto-isolators described above, variations tend to occur in the adhesion between the silicone resin layer 7 that forms the optical path and the insulating film 5. A problem like this was occurring.
第一の問題は、絶縁耐圧のバラツキが生じ、効率良く所
望の絶縁耐圧を得ることができない点である。The first problem is that variations occur in the dielectric strength voltage, making it impossible to efficiently obtain the desired dielectric strength voltage.
第二の問題は、絶縁性フィルム５とシリコーン樹脂層６
との界面で光が反射されるため光学的ロスを生じ、光電
変換効率が低下す、ることである。The second problem is that the insulating film 5 and the silicone resin layer 6
This is because light is reflected at the interface with the material, causing optical loss and reducing photoelectric conversion efficiency.
本発明は上記事情に鑑みてなされたもので、透明な光路
物質層を介して発光素子と受光素子とを光学的に結合し
た光結合半導体装置において、両素子間に絶縁性フィル
ムを介在させることにより絶縁耐圧を向上させると共に
、光路物質層と絶縁性フィルムとの密着性を改善して絶
縁耐圧の均一性および光伝達特性を更に改善することを
目的とするものである。The present invention has been made in view of the above circumstances, and provides an optically coupled semiconductor device in which a light emitting element and a light receiving element are optically coupled via a transparent optical path material layer, in which an insulating film is interposed between the two elements. The purpose of this invention is to improve the dielectric strength voltage and to improve the adhesion between the optical path material layer and the insulating film, thereby further improving the uniformity of the dielectric strength voltage and the light transmission characteristics.
本発明による光結合半導体装置は、透光性の光路物質層
により光学的に結合された半導体発光素子および半導体
受光素子と、これら両素子間を横切って前記光路物質層
中に埋設された絶縁性フィルムと、前記光路物質の外側
を覆って形成された遮光性の封止樹脂層と、一端が前記
半導体発光素子または半導体受光素子の夫々対応する素
子に接続されると共に他端部が前記封止樹脂層から外部
に延出されたリードとを具備し、前記絶縁性フィルムと
して絶縁性には優れるが前記光路物質層との濡れ性に劣
る第一の絶縁性フィルムの両面に、前記光路物質層に対
して良好な濡れ性を有する第二の絶縁性フィルムを積層
した積層絶縁性フィルムを用いたことを特徴とするもの
である。The optically coupled semiconductor device according to the present invention includes a semiconductor light-emitting element and a semiconductor light-receiving element that are optically coupled by a light-transmitting optical path material layer, and an insulating semiconductor device embedded in the optical path material layer across between these two elements. a film, a light-shielding sealing resin layer formed to cover the outside of the optical path material, one end of which is connected to the corresponding element of the semiconductor light emitting element or the semiconductor light receiving element, and the other end of which is connected to the sealing resin layer; and a lead extending outward from the resin layer, and the optical path material layer is provided on both sides of the first insulating film, which has excellent insulation properties but poor wettability with the optical path material layer. The invention is characterized by using a laminated insulating film in which a second insulating film having good wettability with respect to the substrate is laminated.
上記のように、光路物質層との濡れ性の良い第二の絶縁
性フィルムを積層した絶縁性フィルムを用いることで、
第一の絶縁性フィルムの優れた絶縁性をそのまま生かし
、且つ光路物質層と絶縁性フィルムの密着性を顕著に改
善することができる。As mentioned above, by using an insulating film laminated with a second insulating film that has good wettability with the optical path material layer,
The excellent insulating properties of the first insulating film can be utilized as is, and the adhesion between the optical path material layer and the insulating film can be significantly improved.
本発明において、第一の絶縁性フィルムの両面に積層さ
れる前記第二の絶縁性フィルムは、片面毎に異なる種類
のものを用いてもよく、また両面とも同じ種類のものを
用いてもよい。In the present invention, the second insulating film laminated on both sides of the first insulating film may be of a different type for each side, or the same type of film may be used for both sides. .
第１図（Ａ＞は本発明の一実施例になるフォトカプラの
断面図であり、同図（Ｂ）はこれに用いられている絶縁
性フィルムの断面図である。第１図（Ａ＞から明らかな
ように、この実施例における基本的な構成は第２図の従
来のオプトアイソレじ部分には同一の参照番号を付し、
その説明は省受光素子、５′は絶縁性フィルム、６はシ
リコーン樹脂層、７は封止樹脂層である。FIG. 1 (A>) is a sectional view of a photocoupler according to an embodiment of the present invention, and FIG. 1(B) is a sectional view of an insulating film used in the photocoupler. As is clear from the figure, the basic configuration of this embodiment is as follows: The conventional opto-isolated parts in FIG.
The explanation is that it is a light receiving element, 5' is an insulating film, 6 is a silicone resin layer, and 7 is a sealing resin layer.
他方、この実施例では絶縁性フィルム５′の構成におい
て第２図の従来例と相違している。即ち、この実施例に
用いられている絶縁性フィルム５′はＦＥＰ樹脂フィル
ム５１と、その両側に積層されたポリイミド樹脂フィル
ム５２．５２からなっている。この積層絶縁性フィルム
５′は三枚のフィルム５１，５２．５２を接着剤で貼り
合せたものでもよく、またＦＥＰ樹脂フィルム５１の両
面い。On the other hand, this embodiment differs from the conventional example shown in FIG. 2 in the structure of the insulating film 5'. That is, the insulating film 5' used in this embodiment consists of an FEP resin film 51 and polyimide resin films 52 and 52 laminated on both sides thereof. This laminated insulating film 5' may be one in which three films 51, 52, and 52 are bonded together with an adhesive, or both sides of the FEP resin film 51 may be laminated.
上記実施例のオプトアイソレータでは、絶縁性フィルム
５′が基材としてＦＥＰ樹脂フィルムを具備しているた
め、第２図の従来例と同等の良好な絶縁耐圧が得られる
。また、絶縁性フィルム５′の表面はシリコーン樹脂と
の間に良好な濡れ性を有するポリイミド樹脂フィルムで
覆われているため、光路を形成するシリコーン樹脂層６
との間に均−且つ強固な密着性が得られる。従って、従
来のように絶縁耐圧のバラツキが生じることはなく、発
光素子と受光素子間の絶縁特性の向上を図ることができ
る。また、絶縁性フィルム５とシリコーン樹脂層６との
界面での光の反射による光学的ロスが防止されるから、
光伝達特性の向上にも寄与する。In the opto-isolator of the above embodiment, since the insulating film 5' has an FEP resin film as a base material, a good dielectric strength voltage equivalent to that of the conventional example shown in FIG. 2 can be obtained. In addition, since the surface of the insulating film 5' is covered with a polyimide resin film that has good wettability with silicone resin, the silicone resin layer 6 that forms the optical path
Even and strong adhesion can be obtained between the two. Therefore, variations in dielectric strength voltage do not occur as in the conventional case, and the insulation characteristics between the light emitting element and the light receiving element can be improved. In addition, optical loss due to reflection of light at the interface between the insulating film 5 and the silicone resin layer 6 is prevented.
It also contributes to improving light transmission characteristics.
なお、上記実施例にあける絶縁性フィルム５′としては
、エポキシ樹脂フィルムの両面にポリイミド樹脂フィル
ムを積層したものを用いてもよい。Note that as the insulating film 5' in the above embodiment, an epoxy resin film laminated with polyimide resin films on both sides may be used.
以上詳述したように、本発明によれば透明な光路物質層
を介して発光素子と受光素子とを光学的に結合した光結
合半導体装置において、両素子間に絶縁性フィルムを介
在させることにより絶縁耐圧を向上させると共に、光路
物質層と絶縁性フィルムとの密着性を改善して絶縁耐圧
゛の均一性および光伝達特性を更に改善できる等、顕著
な効果が得られるものである。As detailed above, according to the present invention, in an optically coupled semiconductor device in which a light emitting element and a light receiving element are optically coupled via a transparent optical path material layer, an insulating film is interposed between both elements. Not only the dielectric strength voltage is improved, but also the adhesion between the optical path material layer and the insulating film is improved, so that the uniformity of the dielectric strength voltage and the light transmission characteristics can be further improved.
第１図（Ａ＞は本発明の一実施例になるオプトアイソレ
ータの断面図であり、同図（Ｂ）はこれに用いられてい
る絶縁性フィルムの構造を示す断面図、第２図（Ａ＞は
従来のオプトアイソレータの断面図であり、同図（Ｂ）
はこれに用いられている絶縁性膜の断面図である。
１・・・発光素子用リード、２・・・半導体発光素子、
出願人代理人 弁理士 鈴江武彦
第１図
（Ａ）
第２図
（Ａ）FIG. 1 (A) is a cross-sectional view of an opto-isolator according to an embodiment of the present invention, FIG. ＞ is a cross-sectional view of a conventional opto-isolator, and the same figure (B)
is a cross-sectional view of an insulating film used in this. 1... Lead for light emitting element, 2... Semiconductor light emitting element,
Applicant's agent Patent attorney Takehiko Suzue Figure 1 (A) Figure 2 (A)
Claims (4)
導体発光素子および半導体受光素子と、これら両素子間
を横切って前記光路物質層中に埋設された絶縁性フィル
ムと、前記光路物質の外側を覆って形成された遮光性の
封止樹脂層と、一端が前記半導体発光素子または半導体
受光素子の夫々対応する素子に接続されると共に他端部
が前記封止樹脂層から外部に延出されたリードとを具備
し、前記第一の絶縁性フィルムの両面に、前記光路物質
層に対して良好な濡れ性を有する第二の絶縁性フィルム
を積層した積層絶縁性フィルムを用いたことを特徴とす
る光結合半導体装置。(1) A semiconductor light-emitting element and a semiconductor light-receiving element optically coupled by a light-transmitting optical path material layer, an insulating film embedded in the optical path material layer across between these two elements, and the optical path material a light-shielding encapsulating resin layer formed covering the outside of the encapsulating resin layer, one end of which is connected to a corresponding element of the semiconductor light emitting element or the semiconductor light receiving element, and the other end extending externally from the encapsulating resin layer. A laminated insulating film is used, in which a second insulating film having good wettability with respect to the optical path material layer is laminated on both surfaces of the first insulating film. An optically coupled semiconductor device characterized by:
第一の絶縁性フィルムがフッ素樹脂フィルム、前記第二
の絶縁性フィルムがポリイミド樹脂フィルムであること
を特徴とする特許請求の範囲第（１）項記載の光結合半
導体装置。(2) The optical path material layer is a silicone resin layer, the first insulating film is a fluororesin film, and the second insulating film is a polyimide resin film. The optically coupled semiconductor device according to item 1).
化プロピレンとの共重合体樹脂フィルムであることを特
徴とする特許請求の範囲第（２）項記載の光結合半導体
装置。(3) The optically coupled semiconductor device according to claim (2), wherein the fluororesin film is a copolymer resin film of tetrafluoroethylene and hexafluoropropylene.
絶縁性フィルムの種類が異なることを特徴とする特許請
求の範囲第（１）項記載の光結合半導体装置。(4) The optically coupled semiconductor device according to claim (1), wherein the types of the second insulating films are different on both sides of the first insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056512A JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056512A JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61214585A true JPS61214585A (en) | 1986-09-24 |
| JPH0311109B2 JPH0311109B2 (en) | 1991-02-15 |
Family
ID=13029175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60056512A Granted JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61214585A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766680A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
| JPS5766679A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
-
1985
- 1985-03-20 JP JP60056512A patent/JPS61214585A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766680A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
| JPS5766679A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0311109B2 (en) | 1991-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4125848B2 (en) | Chip type light emitting device with case | |
| JP2557324B2 (en) | Reflected light barrier and method of manufacturing the same | |
| JP2600616B2 (en) | Optical coupling device | |
| JPH11214752A (en) | Semiconductor light-emitting device | |
| JPS61214585A (en) | Photocoupling semiconductor device | |
| JP3816114B2 (en) | Optical coupling device | |
| JP3638328B2 (en) | Surface mount type photocoupler and manufacturing method thereof | |
| KR100298880B1 (en) | Optical coupling device and method for manufacturing the same | |
| JPS6254974A (en) | Optical coupling semiconductor device | |
| JPH118404A (en) | Optically coupling element and its manufacture | |
| JPH11233810A (en) | Photocoupler and its manufacture | |
| JPH06291363A (en) | Photocoupler | |
| JPS6018850Y2 (en) | photo coupler | |
| JP2013251410A (en) | Optical coupling element | |
| JP3118353B2 (en) | Optical semiconductor coupling device | |
| JPS5932072B2 (en) | Optical coupling semiconductor device | |
| JPH02154482A (en) | Resin-sealed semiconductor light emitting device | |
| JPH0211794Y2 (en) | ||
| JPH09232623A (en) | Photocoupler and manufacture thereof | |
| JPS5998565A (en) | Optical coupling element | |
| JP2000340831A (en) | Photocoupler | |
| JPS59139684A (en) | Optically coupled semiconductor device | |
| JPH0132369Y2 (en) | ||
| JPH02288370A (en) | Manufacture of light-coupled device | |
| TW202226619A (en) | Diode package structure and manugacturing thereof |