JPH0311109B2 - - Google Patents
Info
- Publication number
- JPH0311109B2 JPH0311109B2 JP5651285A JP5651285A JPH0311109B2 JP H0311109 B2 JPH0311109 B2 JP H0311109B2 JP 5651285 A JP5651285 A JP 5651285A JP 5651285 A JP5651285 A JP 5651285A JP H0311109 B2 JPH0311109 B2 JP H0311109B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- optical path
- path material
- light
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 229920002050 silicone resin Polymers 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 25
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OFHQVNFSKOBBGG-UHFFFAOYSA-N 1,2-difluoropropane Chemical compound CC(F)CF OFHQVNFSKOBBGG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体発光素子と半導体受光素子とを
同一の外囲器内に封止すると共に、両者を電気的
には絶縁し且つ光学的に結合した光結合半導体装
置、特に、一般にフオトアイソレータ（通称フオ
トカプラ）と称される光結合半導体装置の改良に
関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention seals a semiconductor light emitting device and a semiconductor light receiving device in the same envelope, electrically insulating them and optically coupling them. The present invention relates to improvements in optically coupled semiconductor devices, particularly optically coupled semiconductor devices generally referred to as photoisolators (commonly known as photocouplers).
第２図は従来の代表的なフオトアイソレータの
構造を示す断面図である。同図において、１は発
光素子用リードである。該リード１には半導体発
光素子２がマウントされ、該発光素子には図示し
ないワイヤボンデイングが施されている。３は受
光素子用リードで、該リードには半導体受光素子
４がマウントされ、且つ図示しないワイヤボンデ
イングが施されている。図示のように発光素子２
および受光素子４は対向して配置され、両素子間
には透明な絶縁性フイルム５が介在されている。
そして、該フイルム５が介在された状態で前記発
光素子２および受光素子４間の空隙は透明なシリ
コーン樹脂層６で満たされ、このシリコーン樹脂
層により両素子２，４は光学的に結合されてい
る。更に、その外側はトランスフアー成形された
エポキシ樹脂層７で封止され、前記発光素子用リ
ード１および受光素子用リード３は夫々エポキシ
樹脂層７の対向側壁から外方に延出されて下方に
折曲げられている。
FIG. 2 is a sectional view showing the structure of a typical conventional photo isolator. In the figure, 1 is a lead for a light emitting element. A semiconductor light emitting element 2 is mounted on the lead 1, and wire bonding (not shown) is applied to the light emitting element. Reference numeral 3 denotes a lead for a light receiving element, on which a semiconductor light receiving element 4 is mounted and wire bonding (not shown) is performed. Light emitting element 2 as shown
The light receiving elements 4 are arranged facing each other, and a transparent insulating film 5 is interposed between both elements.
Then, with the film 5 interposed, the gap between the light emitting element 2 and the light receiving element 4 is filled with a transparent silicone resin layer 6, and both elements 2 and 4 are optically coupled by this silicone resin layer. There is. Furthermore, the outside thereof is sealed with a transfer-molded epoxy resin layer 7, and the light-emitting element lead 1 and the light-receiving element lead 3 are respectively extended outward from the opposing sidewalls of the epoxy resin layer 7 and downward. It is bent.
上記構造からなる従来のオプトアイソレータに
おいて、絶縁性フイルム５は発光素子および受光
素子間の絶縁耐圧を向上させるために用いられる
もので、通常は第２図Ｂに示すように四弗化エチ
レンと六弗化プロピレンとの共重合体樹脂（以下
FEP樹脂と略称する）からなる単層膜が用いら
れている。周知のようにFEP等のフツ素樹脂は
優れた絶縁破壊特性を有しており、その単層膜６
を介在させることで、オプトアイソレータの絶縁
耐圧は平均３〜4kV向上することが実験により明
かにされている。 In the conventional opto-isolator having the above structure, the insulating film 5 is used to improve the dielectric strength between the light-emitting element and the light-receiving element, and is usually made of tetrafluoroethylene and hexafluoroethylene as shown in FIG. 2B. Copolymer resin with propylene fluoride (hereinafter referred to as
A single-layer film made of FEP resin (abbreviated as FEP resin) is used. As is well known, fluororesin such as FEP has excellent dielectric breakdown properties, and its single layer film6
Experiments have shown that by interposing the dielectric strength of the opto-isolator, it is improved by an average of 3 to 4 kV.
ところが、FEP樹脂等のフツ素樹脂はシリコ
ーン樹脂に体する濡れ性が悪いことから、上記従
来のオプトアイソレータでは光路を形成するシリ
コーン樹脂層７と絶縁性フイルム５の密着性にバ
ラツキを生じ易く、このため次のような問題が発
生していた。
However, since fluorine resins such as FEP resins have poor wettability with silicone resins, in the conventional opto-isolators described above, variations tend to occur in the adhesion between the silicone resin layer 7 forming the optical path and the insulating film 5. This caused the following problems.
第一の問題は、絶縁耐圧のバラツキが生じ、効
率良く所望の絶縁耐圧を得ることができない点で
ある。 The first problem is that variations occur in the dielectric strength voltage, making it impossible to efficiently obtain the desired dielectric strength voltage.
第二の問題は、絶縁性フイルム５とシリコーン
樹脂層６との界面で光が反射されるため光学的ロ
スを生じ、光電変換効率が低下することである。 The second problem is that light is reflected at the interface between the insulating film 5 and the silicone resin layer 6, causing optical loss and reducing photoelectric conversion efficiency.
本発明は上記事情に鑑みてなされたもので、透
明な光路物質層を介して発光素子と受光素子とを
光学的に結合した光結合半導体装置において、両
素子間に絶縁性フイルムを介在させることにより
絶縁耐圧を向上させると共に、光路物質層と絶縁
性フイルムとの密着性を改善して絶縁耐圧の均一
性および光伝達特性を更に改善することを目的と
するものである。
The present invention has been made in view of the above circumstances, and provides an optically coupled semiconductor device in which a light emitting element and a light receiving element are optically coupled via a transparent optical path material layer, in which an insulating film is interposed between the two elements. The purpose of this invention is to improve the dielectric strength voltage and to improve the adhesion between the optical path material layer and the insulating film, thereby further improving the uniformity of the dielectric strength voltage and the light transmission characteristics.
本発明による光結合半導体装置は、透光性の光
路物質層により光学的に結合された半導体発光素
子および半導体受光素子と、これら両素子間を横
切つて前記光路物質層中に埋設された絶縁性フイ
ルムと、前記光路物質の外側を覆つて形成された
遮光性の封止樹脂層と、一端が前記半導体発光素
子または半導体受光素子の夫々対応する素子に接
続されると共に他端部が前記封止樹脂層から外部
に延出されたリードとを具備し、前記絶縁性フイ
ルムとして絶縁性には優れるが前記光路物質層と
の濡れ性に劣る第一の絶縁性フイルムの両面に、
前記光路物質層に対して良好な濡れ性を有する第
二の絶縁性フイルムを積層した積層絶縁性フイル
ムを用いたことを特徴とするものである。
The optically coupled semiconductor device according to the present invention includes a semiconductor light-emitting element and a semiconductor light-receiving element that are optically coupled by a light-transmitting optical path material layer, and an insulator that is embedded in the optical path material layer across between these two elements. a transparent film, a light-shielding sealing resin layer formed to cover the outside of the optical path material, one end of which is connected to the corresponding element of the semiconductor light emitting element or the semiconductor light receiving element, and the other end of which is connected to the sealing resin layer. on both sides of the first insulating film, which has leads extending outward from the stopper resin layer, and which has excellent insulating properties as the insulating film but has poor wettability with the optical path material layer;
The present invention is characterized in that a laminated insulating film is used, in which a second insulating film having good wettability with respect to the optical path material layer is laminated.
上記のように、光路物質層との濡れ性の良い第
二の絶縁性フイルムを積層した絶縁性フイルムを
用いることで、第一の絶縁性フイルムの優れた絶
縁性をそのまま生かし、且つ光路物質層と絶縁性
フイルムの密着性を顕著に改善することができ
る。 As mentioned above, by using an insulating film laminated with a second insulating film that has good wettability with the optical path material layer, the excellent insulation properties of the first insulating film can be utilized as is, and the optical path material layer The adhesion of the insulating film can be significantly improved.
本発明において、第一の絶縁性フイルムの両面
に積層される前記第二の絶縁性フイルムは、片面
毎に異なる種類のものを用いてもよく、また両面
とも同じ種類のものを用いてもよい。 In the present invention, the second insulating film laminated on both sides of the first insulating film may be of a different type for each side, or the same type of film may be used for both sides. .
第１図Ａは本発明の一実施例になるフオトカプ
ラの断面図であり、同図Ｂはこれに用いられてい
る絶縁性フイルムの断面図である。第１図Ａから
明らかなように、この実施例における基本的な構
成は第２図の従来のオプトアイソレータと全く同
じである。従つて、図中第２図と同じ部分には同
一の参照番号を付し、その説明は省略する。即
ち、１は発光素子用リード、２は半導体発光素
子、３は受光素子用リード、４は半導体受光素
子、５′は絶縁性フイルム、６はシリコーン樹脂
層、７は封止樹脂層である。
FIG. 1A is a cross-sectional view of a photocoupler according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of an insulating film used in the photocoupler. As is clear from FIG. 1A, the basic configuration of this embodiment is exactly the same as the conventional opto-isolator shown in FIG. Therefore, the same parts in the figure as in FIG. 2 are given the same reference numerals, and their explanation will be omitted. That is, 1 is a lead for a light emitting element, 2 is a semiconductor light emitting element, 3 is a lead for a light receiving element, 4 is a semiconductor light receiving element, 5' is an insulating film, 6 is a silicone resin layer, and 7 is a sealing resin layer.
他方、この実施例では絶縁性フイルム５′の構
成において第２図の従来例と相違している。即
ち、この実施例に用いられている絶縁性フイルム
５′はFEP樹脂フイルム５1と、その両側に積層さ
れたポリイミド樹脂フイムル５2，５2からなつて
いる。この積層絶縁性フイルム５′は三枚のフイ
ルム５1，５2，５2を接着剤で貼り合わせたもの
でもよく、また、FEP樹脂フイルム５1の両面に
ポリイミド樹脂をコーテイングしたものでもよ
い。 On the other hand, this embodiment differs from the conventional example shown in FIG. 2 in the structure of the insulating film 5'. That is, the insulating film 5' used in this embodiment consists of an FEP resin film 51 and polyimide resin films 52 and 52 laminated on both sides thereof. This laminated insulating film 5' may be made by bonding three films 5 1 , 5 2 , 5 2 with an adhesive, or may be made by coating both sides of the FEP resin film 5 1 with polyimide resin.
上記実施例のオプトアイソレータでは、絶縁性
フイルム５′が基材としてFEP樹脂フイルムを具
備しているため、第２図の従来例と同等の良好な
絶縁耐圧が得られる。また、絶縁性フイルム５′
の表面はシリコーン樹脂との間に良好な濡れ性を
有するポリイミド樹脂フイルムで覆われているた
め、光路を形成するシリコーン樹脂層６との間に
均一且つ強固な密着性が得られる。従つて、従来
のように絶縁耐圧のバラツキが生じることはな
く、発光素子と受光素子間の絶縁特性の向上を図
ることができる。また、絶縁性フイルム５とシリ
コーン樹脂層６との界面での光の反射による光学
的ロスが防止されるから、光伝達特性の向上にも
寄与する。 In the opto-isolator of the above embodiment, since the insulating film 5' has an FEP resin film as a base material, a good dielectric strength voltage equivalent to that of the conventional example shown in FIG. 2 can be obtained. In addition, the insulating film 5'
Since its surface is covered with a polyimide resin film that has good wettability with silicone resin, uniform and strong adhesion can be obtained between it and the silicone resin layer 6 that forms the optical path. Therefore, variations in dielectric strength voltage do not occur as in the conventional case, and it is possible to improve the insulation characteristics between the light emitting element and the light receiving element. Further, since optical loss due to reflection of light at the interface between the insulating film 5 and the silicone resin layer 6 is prevented, it also contributes to improvement of light transmission characteristics.
なお、上記実施例における絶縁性フイルム５′
としては、エポキシ樹脂フイルムの両面にポリイ
ミド樹脂フイルムを積層したものを用いてもよ
い。 Note that the insulating film 5' in the above embodiment
Alternatively, an epoxy resin film laminated with polyimide resin films on both sides may be used.
以上詳述したように、本発明によれば透明な光
路物質層を介して発光素子と受光素子とを光学的
に結合した光結合半導体装置において、両素子間
に絶縁性フイルムを介在させることにより絶縁耐
圧を向上させると共に、光路物質層と絶縁性フイ
ルムとの密着性を改善して絶縁耐圧の均一性およ
び光伝達特性を更に改善できる等、顕著な効果が
得られるものである。
As detailed above, according to the present invention, in an optically coupled semiconductor device in which a light emitting element and a light receiving element are optically coupled via a transparent optical path material layer, an insulating film is interposed between the two elements. In addition to improving the dielectric strength voltage, the adhesion between the optical path material layer and the insulating film can be improved to further improve the uniformity of the dielectric strength voltage and the light transmission characteristics, and other remarkable effects can be obtained.
第１図Ａは本発明の一実施例になるオプトアイ
ソレータの断面図であり、同図Ｂはこれに用いら
れている絶縁性フイルムの構造を示す断面図、第
２図Ａは従来のオプトアイソレータの断面図であ
り、同図Ｂはこれに用いられている絶縁性膜の断
面図である。
１……発光素子用リード、２……半導体発光素
子、３……受光素子用リード、４……半導体受光
素子、５，５′……絶縁性フイルム、５1……FEP
樹脂フイルム、５2，５3……ポリイミド樹脂フイ
ルム、６……シリコーン樹脂層、７……封止樹脂
層。
FIG. 1A is a sectional view of an optoisolator according to an embodiment of the present invention, FIG. 1B is a sectional view showing the structure of an insulating film used in the optoisolator, and FIG. Figure B is a cross-sectional view of the insulating film used therein. 1...Lead for light emitting element, 2...Semiconductor light emitting element, 3...Lead for light receiving element, 4...Semiconductor light receiving element, 5,5'...Insulating film, 5 1 ...FEP
Resin film, 5 2 , 5 3 ... polyimide resin film, 6 ... silicone resin layer, 7 ... sealing resin layer.
Claims (1)
た半導体発光素子および半導体受光素子と、これ
ら両素子間を横切つて前記光路物質層中に埋設さ
れた絶縁性フイルムと、前記光路物質の外側を覆
つて形成された遮光性の封止樹脂層と、一端が前
記半導体発光素子または半導体受光素子の夫々対
応する素子に接続されると共に他端部が前記封止
樹脂層から外部に延出されたリードとを具備し、
前記第一の絶縁性フイルムの両面に、前記光路物
質層に対して良好な濡れ性を有する第二の絶縁性
フイルムを積層した積層絶縁性フイルムを用いた
ことを特徴とする光結合半導体装置。 ２ 前記光路物質層がシリコーン樹脂層であり、
前記第一の絶縁性フイルムがフツ素樹脂フイル
ム、前記第二の絶縁性フイルムがポリイミド樹脂
フイルムであることを特徴とする特許請求の範囲
第１項記載の光結合半導体装置。[Scope of Claims] 1. A semiconductor light-emitting element and a semiconductor light-receiving element optically coupled by a light-transmitting optical path material layer, and an insulating film embedded in the optical path material layer across between these two elements. and a light-shielding sealing resin layer formed to cover the outside of the optical path material, one end of which is connected to the corresponding element of the semiconductor light-emitting element or the semiconductor light-receiving element, and the other end of which is connected to the sealing resin. and a lead extending outward from the layer,
An optical coupling semiconductor device characterized in that a laminated insulating film is used, in which a second insulating film having good wettability with respect to the optical path material layer is laminated on both surfaces of the first insulating film. 2. The optical path material layer is a silicone resin layer,
2. The optically coupled semiconductor device according to claim 1, wherein the first insulating film is a fluororesin film, and the second insulating film is a polyimide resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056512A JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056512A JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61214585A JPS61214585A (en) | 1986-09-24 |
| JPH0311109B2 true JPH0311109B2 (en) | 1991-02-15 |
Family
ID=13029175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60056512A Granted JPS61214585A (en) | 1985-03-20 | 1985-03-20 | Photocoupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61214585A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766680A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
| JPS5766679A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
-
1985
- 1985-03-20 JP JP60056512A patent/JPS61214585A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766680A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
| JPS5766679A (en) * | 1980-10-09 | 1982-04-22 | Toshiba Corp | Photocoupling semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61214585A (en) | 1986-09-24 |
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