JPS5932072B2 - Optical coupling semiconductor device - Google Patents

Optical coupling semiconductor device

Info

Publication number
JPS5932072B2
JPS5932072B2 JP54072917A JP7291779A JPS5932072B2 JP S5932072 B2 JPS5932072 B2 JP S5932072B2 JP 54072917 A JP54072917 A JP 54072917A JP 7291779 A JP7291779 A JP 7291779A JP S5932072 B2 JPS5932072 B2 JP S5932072B2
Authority
JP
Japan
Prior art keywords
insulating resin
resin layer
external lead
side external
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54072917A
Other languages
Japanese (ja)
Other versions
JPS55163883A (en
Inventor
滋 北陽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54072917A priority Critical patent/JPS5932072B2/en
Publication of JPS55163883A publication Critical patent/JPS55163883A/en
Publication of JPS5932072B2 publication Critical patent/JPS5932072B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Description

【発明の詳細な説明】 この発明は、光結合半導体装置の入出力間の内部絶縁耐
力の向上に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving internal dielectric strength between input and output of an optically coupled semiconductor device.

一般に、光結合半導体装置（以下、「光結合装置」と略
称する）においては、発光素子および受光素子をそれぞ
れの外部リード導体にダイボンディング、ワイヤボンデ
ィングした後、発光素子および受光素子を相対向するよ
うに位置させ、発光素子と受光素子との間の空間に透明
絶縁樹脂を充填し、光結合路とし、さらにその外側にエ
ポキシ樹脂、シリコン樹脂などからなる外装用不透明絶
縁樹脂をモールド成形して、樹脂モールド形光結合装置
が完成する。Generally, in an optically coupled semiconductor device (hereinafter abbreviated as "optical coupler"), the light emitting element and the light receiving element are die-bonded or wire bonded to their respective external lead conductors, and then the light emitting element and the light receiving element are faced to each other. The space between the light emitting element and the light receiving element is filled with transparent insulating resin to form an optical coupling path, and an opaque insulating resin for exterior use made of epoxy resin, silicone resin, etc. is molded on the outside. , a resin molded optical coupling device is completed.

第１図は従来の樹脂モールド形光結合装置の一例の要部
断面図である。FIG. 1 is a sectional view of a main part of an example of a conventional resin mold type optical coupling device.

第１図において、１は発光素子、２０は発光素子１がダ
イボンディングされている第１の入力側外部リード導体
、２ｂは第２の入力側外部リード導体、３は発光素子１
の表面電極と第２の入力側外部リード導体、２ｂとを接
続する入力側内部リード線、４は受光素子、５ａは受光
素子４がダイボンディングされている第１の出力側外部
リード導体、５ｂは第２の出力側外部リード導体、６は
受光素子４の表面電極と第２の出力側外部リード導体５
ｂとを接続する出力側内部リード線、Ｔは発光素子１と
受光素子４との間の空間に充填され光結合路を形成して
いる透明絶縁樹脂層、８は透明絶縁樹脂１を取わ囲み入
力側外部リード導体２ａ、２ｂ、入力側内部リード線３
、出力側外部リード導体５ａ、５ｂおよび出力側内部リ
ード線６の所要部分を被覆するようにモールド成形され
た外装用不透明絶縁樹脂層である。光結合装置において
、光の拡散を防ぎ光結合感光を高めるためには、光結合
路を形成する透明絶縁樹脂層１の樹脂量はできるだけ少
ないことが望ましい。In FIG. 1, 1 is a light-emitting element, 20 is a first input-side external lead conductor to which the light-emitting element 1 is die-bonded, 2b is a second input-side external lead conductor, and 3 is the light-emitting element 1.
4 is a light-receiving element, 5a is a first output-side external lead conductor to which the light-receiving element 4 is die-bonded, 5b; 6 is the second output side external lead conductor, and 6 is the surface electrode of the light receiving element 4 and the second output side external lead conductor 5.
T is a transparent insulating resin layer filling the space between the light emitting element 1 and the light receiving element 4 and forming an optical coupling path; 8 is an output side internal lead wire connecting the transparent insulating resin 1; Enclosed input side external lead conductors 2a, 2b, input side internal lead wire 3
This is an opaque insulating resin layer for the exterior that is molded to cover required portions of the output-side external lead conductors 5a, 5b and the output-side internal lead wire 6. In the optical coupling device, in order to prevent light diffusion and enhance optical coupling sensitivity, it is desirable that the amount of resin in the transparent insulating resin layer 1 forming the optical coupling path is as small as possible.

一方、光結合装置の大きな特徴は入出力間の電気絶縁性
が良好なことである。この電気絶縁性は、透明絶縁樹脂
Ｔおよび外装用不透明絶縁樹脂層８による入力側外部リ
ード導体２ａ、２ｂと出力側外部リード導体５ａ、５ｂ
との絶縁によって達成されているが、上記のような従来
のモールド形光結合装置に訃いては、透明絶縁樹脂と外
装としてモールド成形が可能な外装用の不透明絶縁樹脂
との接着が不十分であり、透明絶縁樹脂層７の表面での
沿面放電による絶縁破壊がしばしば起こり、絶縁耐力の
低下を来たしていた。従つて、絶縁耐力を増大させるに
は、透明絶縁樹脂層７の樹脂量を増し、その沿面距離を
増大させればよいが、前記のように、透明絶縁樹脂層７
の樹脂量の増加は光結合感度を低下させることになる。
この発明は、上述の点に鑑みてなされたものであり、透
明絶縁樹脂との接着強さが大きい不透明絶縁樹脂による
中間層を設けることによつて、光結合感度を低下させる
ことなく絶縁耐力の向上を計つた光結合装置を提供する
ことを目的としたものである。以下、実施例に基づいて
この発明の説明する。On the other hand, a major feature of optical coupling devices is that they have good electrical insulation between input and output. This electrical insulation is achieved by the input side external lead conductors 2a, 2b and the output side external lead conductors 5a, 5b by the transparent insulating resin T and the opaque insulating resin layer 8 for the exterior.
However, the problem with the conventional molded optical coupler described above is that the adhesion between the transparent insulating resin and the opaque insulating resin for the exterior, which can be molded as the exterior, is insufficient. However, dielectric breakdown due to creeping discharge on the surface of the transparent insulating resin layer 7 often occurs, resulting in a decrease in dielectric strength. Therefore, in order to increase the dielectric strength, it is sufficient to increase the amount of resin in the transparent insulating resin layer 7 and increase its creepage distance.
An increase in the amount of resin will reduce the optical coupling sensitivity.
This invention was made in view of the above points, and by providing an intermediate layer made of an opaque insulating resin that has a high adhesive strength with a transparent insulating resin, it is possible to increase the dielectric strength without reducing the optical coupling sensitivity. The object of this invention is to provide an improved optical coupling device. The present invention will be explained below based on examples.

第２図はこの発明による光結合装置の一実施例の要部断
面図である。第２図において、第１図と同一符号は第１
図にて示したものと同様のものを表わしている。９は透
明絶縁樹脂層７との接着強さが大きいため透明絶縁樹脂
層７との界面が電気的に沿面とならないような不透明絶
縁樹脂を透明絶縁樹脂層７の表面、ならびに入力側外部
リード導体２ａ，２ｂ、出力側外部リード導体５ａ，５
ｂ入力側内部リード線３訃よび出力側内部リード線６の
所要部分の表面に被覆して形成した中間不透明絶縁樹脂
層である。FIG. 2 is a sectional view of a main part of an embodiment of the optical coupling device according to the present invention. In Figure 2, the same symbols as in Figure 1 are
It represents something similar to that shown in the figure. 9 is an opaque insulating resin that has a high adhesive strength with the transparent insulating resin layer 7 so that the interface with the transparent insulating resin layer 7 does not become electrically creeping on the surface of the transparent insulating resin layer 7 and the input side external lead conductor. 2a, 2b, output side external lead conductor 5a, 5
(b) An intermediate opaque insulating resin layer formed by covering the surfaces of required portions of the input-side internal lead wire 3 and the output-side internal lead wire 6.

実施例の光結合装置の場合、透明絶縁樹脂層７と中間不
透明絶縁樹脂層９との接着強さが大きいので、透明絶縁
樹脂層７の表面では沿面放電が起こらず、また、中間不
透明絶縁樹脂層９と外装用不透明絶縁樹脂層８との接着
が不十分でそれらの界面が電気的に沿面となつても、沿
面距離が長いため沿面放電を防止することができ、絶縁
耐力を増大させることができる。In the case of the optical coupling device of the example, since the adhesive strength between the transparent insulating resin layer 7 and the intermediate opaque insulating resin layer 9 is high, creeping discharge does not occur on the surface of the transparent insulating resin layer 7, and the intermediate opaque insulating resin Even if the adhesion between the layer 9 and the exterior opaque insulating resin layer 8 is insufficient and the interface between them becomes electrically creeping, creeping discharge can be prevented because the creeping distance is long, and the dielectric strength is increased. Can be done.

しかも、光結合路となる透明絶縁樹脂層７の樹脂量は増
加しないから光結合感度は低下しなぃ。一例として、透
明絶縁樹脂層７の樹脂としてダウコーニング社製のシリ
コン樹脂Ｒ６ｌＯｌを使用し、中間不透明絶縁樹脂層９
の樹脂としてゼネラルェレクトリック社製のシリコンゴ
ムＲＴＶｌｌを使用した場合、絶縁耐力は約２倍に向上
した。Moreover, since the amount of resin in the transparent insulating resin layer 7 serving as the optical coupling path does not increase, the optical coupling sensitivity does not decrease. As an example, silicone resin R6lOl manufactured by Dow Corning is used as the resin for the transparent insulating resin layer 7, and the intermediate opaque insulating resin layer 9
When silicone rubber RTVll manufactured by General Electric Co. was used as the resin, the dielectric strength was approximately doubled.

この発明による光結合装置に卦いては、外装用絶縁樹脂
層が不透明である必要は必ずしもない。この発明は、ダ
イオードホトカプラ、トランジスタホトカプラなど入力
側発光素子と出力側受光素子とを有するすべての光結合
装置に適用できるものである。以上詳述したように、こ
の発明による光結合装置に訃いては、光結合路となる透
明絶縁樹脂層との接着強さが大きい不透明絶縁樹脂から
なり透明絶縁樹脂層の表面、ならびに入力側外部リード
導体、出力側外部リード導体、入力側内部リード線およ
び出力側内部リード線の所要部分の表面を被覆する中間
不透明絶縁樹脂層を外装用絶縁樹脂層と透明絶縁樹脂層
との間に設けたので、透明絶縁樹脂層と中間不透明絶縁
樹脂層との界面が電気的に沿面とならないためこの界面
で沿面放電が起こらず、また中間不透明絶縁樹脂層と外
装用絶縁樹脂層との界面が電気的に沿面となつても、沿
面距離が長いため沿面放電を防止でき、絶縁耐力を増大
させることができる。In the optical coupling device according to the present invention, the exterior insulating resin layer does not necessarily have to be opaque. The present invention is applicable to all optical coupling devices having an input side light emitting element and an output side light receiving element, such as a diode photocoupler and a transistor photocoupler. As detailed above, the optical coupling device according to the present invention is made of an opaque insulating resin that has a high adhesive strength with the transparent insulating resin layer that serves as the optical coupling path, and the surface of the transparent insulating resin layer as well as the outside of the input side. An intermediate opaque insulating resin layer is provided between the exterior insulating resin layer and the transparent insulating resin layer to cover the surfaces of required portions of the lead conductor, output-side external lead conductor, input-side internal lead wire, and output-side internal lead wire. Therefore, the interface between the transparent insulating resin layer and the intermediate opaque insulating resin layer is not electrically creeping, so no creeping discharge occurs at this interface, and the interface between the intermediate opaque insulating resin layer and the exterior insulating resin layer is not electrically creeping. Even if creeping occurs, the creeping distance is long, so creeping discharge can be prevented and dielectric strength can be increased.

しかも、光結合路となる透明絶縁樹脂層の樹脂量は増加
しないから光結合感度は低下しない。Moreover, since the amount of resin in the transparent insulating resin layer serving as the optical coupling path does not increase, the optical coupling sensitivity does not decrease.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の樹脂モールド形光結合装置の一例の要部
断面図、第２図はこの発明による光結合装置の一実施例
の要部断面図である。 図に｝いて、１は発光素子、２ａは第１の入力側外部リ
ード導体、２ｂは第２の入力側外部りード導体、３は入
力側内部リード線、４は受光素子、５ａは第１の出力側
外部リード導体、５ｂは第２の出力側外部リード導体、
６は出力側内部リード線、７は透明絶縁樹脂層、８は外
装用不透明絶縁樹脂層、９は中間不透明絶縁樹脂層であ
る。FIG. 1 is a sectional view of a main part of an example of a conventional resin mold type optical coupling device, and FIG. 2 is a sectional view of a main part of an embodiment of an optical coupling device according to the present invention. In the figure, 1 is a light emitting element, 2a is a first input external lead conductor, 2b is a second input external lead conductor, 3 is an input internal lead wire, 4 is a light receiving element, and 5a is a first external lead conductor. 5b is the output side external lead conductor, 5b is the second output side external lead conductor,
6 is an output side internal lead wire, 7 is a transparent insulating resin layer, 8 is an opaque insulating resin layer for exterior use, and 9 is an intermediate opaque insulating resin layer.

Claims (1)

【特許請求の範囲】[Claims] １ 発光素子が接着されている第１の入力側外部リード
導体、上記発光素子の表面電極に入力側内部リード線を
介して接続されている第２の入力側外部リード導体、上
記発光素子に対向するように配設された発光素子が接着
されている第１の出力側外部リード導体、上記受光素子
の表面電極に出力側内部リード線を介して接続されてい
る第２の出力側外部リード導体、上記発光素子と上記受
光素子との間の空間を充填するように形成された透明絶
縁樹脂層、この透明絶縁樹脂の表面および上記第１、第
２の入力側外部リード導体と上記第１、第２の出力側外
部リード導体と上記入力側内部リード線と上記出力側内
部リード線との所要部分の表面に被覆され上記透明絶縁
樹脂層との接着強さの大きい中間不透明絶縁樹脂層、な
らびに上記中間不透明絶縁樹脂層を覆い上記第１、第２
の入力側外部リード導体と上記第１、第２の出力側外部
リード導体との所要部分を覆つてモールド成形された外
装用絶縁樹脂層を備えた光結合半導体装置。1. A first input-side external lead conductor to which a light-emitting element is adhered, a second input-side external lead conductor connected to the surface electrode of the light-emitting element via an input-side internal lead wire, and facing the light-emitting element. a first output-side external lead conductor to which a light-emitting element arranged so as to be bonded; a second output-side external lead conductor connected to the surface electrode of the light-receiving element via an output-side internal lead wire; , a transparent insulating resin layer formed to fill a space between the light emitting element and the light receiving element, a surface of the transparent insulating resin, the first and second input side external lead conductors, and the first, an intermediate opaque insulating resin layer coated on the surfaces of required portions of the second output-side external lead conductor, the input-side internal lead wire, and the output-side internal lead wire and having a high adhesive strength with the transparent insulating resin layer; covering the intermediate opaque insulating resin layer;
An optically coupled semiconductor device comprising an exterior insulating resin layer molded to cover required portions of the input-side external lead conductor and the first and second output-side external lead conductors.
JP54072917A 1979-06-07 1979-06-07 Optical coupling semiconductor device Expired JPS5932072B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54072917A JPS5932072B2 (en) 1979-06-07 1979-06-07 Optical coupling semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54072917A JPS5932072B2 (en) 1979-06-07 1979-06-07 Optical coupling semiconductor device

Publications (2)

Publication Number Publication Date
JPS55163883A JPS55163883A (en) 1980-12-20
JPS5932072B2 true JPS5932072B2 (en) 1984-08-06

Family

ID=13503174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54072917A Expired JPS5932072B2 (en) 1979-06-07 1979-06-07 Optical coupling semiconductor device

Country Status (1)

Country Link
JP (1) JPS5932072B2 (en)

Also Published As

Publication number Publication date
JPS55163883A (en) 1980-12-20

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