KR200317021Y1 - Photocoupler having high current transfer ratio - Google Patents
Photocoupler having high current transfer ratio Download PDFInfo
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- KR200317021Y1 KR200317021Y1 KR20-2003-0008131U KR20030008131U KR200317021Y1 KR 200317021 Y1 KR200317021 Y1 KR 200317021Y1 KR 20030008131 U KR20030008131 U KR 20030008131U KR 200317021 Y1 KR200317021 Y1 KR 200317021Y1
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- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000008393 encapsulating agent Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
본 고안은 광 신호를 통하여 전기 신호를 전송하기 위한 전자 부품인 포토커플러에 관한 것이다.The present invention relates to a photocoupler that is an electronic component for transmitting an electrical signal through an optical signal.
본 고안의 포토커플러는 발광 소자가 탑재된 제1 발광부 리드 프레임의 선단 및 수광 소자가 탑재된 제1 수광부 리드 프레임의 선단, 그리고 금속선이 각각 연결된 제2 발광부 리드 프레임의 선단 및 제2 수광부 리드 프레임의 선단이 각각 대칭적으로 90°미만의 각도로 절곡되어 있는 것을 특징으로 한다.The photocoupler of the present invention has a front end of a first light emitting unit lead frame on which a light emitting element is mounted, a front end of a first light receiving unit lead frame on which a light receiving element is mounted, and a front end and a second light receiving unit of a second light emitting unit lead frame to which metal wires are respectively connected. A tip of the lead frame is symmetrically bent at an angle of less than 90 °.
본 고안의 포토커플러는 수광 소자가 발광 소자로부터 전달받는 직사광의 양을 증가시켜 전류 전달비를 높여 고효율의 제품을 실현함과 동시에, 발광 소자와 수광 소자간의 거리를 늘림으로써 두개의 반도체 소자간의 절연 효과를 향상시켜 최고의 성능을 발휘하게 한다.The photocoupler of the present invention increases the amount of direct light received from the light emitting device to increase the current transmission ratio, thereby realizing a high efficiency product and increasing the distance between the light emitting device and the light receiving device to insulate the two semiconductor devices. Enhance the effect to get the best performance.
Description
본 고안은 광 신호를 통하여 전기 신호를 전송하기 위한 전자 부품인 포토커플러에 관한 것이다.The present invention relates to a photocoupler that is an electronic component for transmitting an electrical signal through an optical signal.
도 1을 참조하면, 일반적으로 포토커플러(photocoupler)는 전기 신호를 발광 소자(20)에 의해 광 신호로 변환한 후, 수광 소자(30)에 의해 전기 신호로 복원하는 것이다. 이것은 또한 입, 출력간에는 전기적으로 완전히 절연되어 있어 출력 신호가 입력 신호에 영향을 미치지 않는 단방향성 부품이다. 이러한 포토커플러는 전위차가 다른 두 회로간의 교호 작용과 고속 광(光) 대역 신호 전달 등에 널리 사용되고 있다.Referring to FIG. 1, in general, a photocoupler converts an electrical signal into an optical signal by the light emitting element 20 and then restores the electrical signal by the light receiving element 30. It is also a unidirectional component that is completely electrically isolated between input and output so that the output signal does not affect the input signal. Such photocouplers are widely used for the interaction between two circuits having different potential differences and for high speed optical band signal transmission.
도 1은 기존의 포토커플러의 종단면도로서, 이를 참조하면 포토커플러는 발광 소자(20)인 적외선 발광 다이오드(IRED: infrared emitting diode)를 포함하는 발광부와 수광 소자(30)인 광 트랜지스터(phototransistor)를 포함하는 수광부로 구성된다. 발광 소자(20)에서 전기 신호가 광 신호로 변환되어 직사광(A), 굴절광(B), 반사광(C)의 형태로 수광 소자(30)로 전달된다.1 is a longitudinal cross-sectional view of a conventional photocoupler. Referring to this, the photocoupler is a light emitting unit including an infrared light emitting diode (IRED), which is a light emitting element 20, and a phototransistor, which is a light receiving element 30. It consists of a light receiving unit including). In the light emitting device 20, an electrical signal is converted into an optical signal and transmitted to the light receiving device 30 in the form of direct light A, refractive light B, and reflected light C.
포토커플러의 제조 방법을 살펴보면, 먼저 제1 발광부 리드 프레임(10)의 선단에 발광 소자(20)를, 제1 수광부 리드 프레임(14)의 선단에 수광 소자(30)를 접합시킨다. 다음에 발광 소자(20)와 제2 발광부 리드 프레임(12)을 금속선(60)으로 연결한다. 마찬가지로 수광 소자(30)와 제2 수광부 리드 프레임(16)을 금속선(60)으로 연결한다. 이후에 광 투과성 절연체인 실리콘 수지를 이용한 내부 봉지재(40) 성형 작업을 통하여 발광 소자(20)와 수광 소자(30)의 광 통로를 형성시킨다. 다음에 불투명의 절연 수지를 이용한 외부 봉지재(50) 성형 작업을 하여 포토커플러를완성하게 된다.Referring to the manufacturing method of the photocoupler, first, the light emitting device 20 is bonded to the front end of the first light emitting unit lead frame 10, and the light receiving device 30 is bonded to the front end of the first light receiving unit lead frame 14. Next, the light emitting device 20 and the second light emitting part lead frame 12 are connected with the metal wire 60. Similarly, the light receiving element 30 and the second light receiving unit lead frame 16 are connected with the metal wire 60. Thereafter, light paths of the light emitting device 20 and the light receiving device 30 are formed by forming the internal encapsulant 40 using the silicone resin as the light transmissive insulator. Next, an external encapsulant 50 forming operation using an opaque insulating resin is performed to complete the photocoupler.
이와 같이 제작된 포토커플러는 도 1에서 보는 바와 같이 발광 소자(20)와 수광 소자(30)가 모두 위를 향하게 배치되어 있다. 발광 소자(20)에서 나온 광 신호가 내부 봉지재(40)와 외부 봉지재(50)의 경계면에 반사되어 수광 소자(30)로 입사됨으로써 광 신호의 손실이 발생될 뿐만 아니라, 발광 소자(20)와 수광 소자(30)가 인접해 있기 때문에 양 소자간의 절연 효과도 떨어지게 된다.In the photocoupler manufactured as described above, as shown in FIG. 1, both the light emitting device 20 and the light receiving device 30 are disposed upward. The optical signal emitted from the light emitting element 20 is reflected on the interface between the inner encapsulant 40 and the outer encapsulant 50 and incident on the light receiving element 30, thereby not only causing loss of the optical signal, but also causing the light emitting element 20 ) And the light receiving element 30 are adjacent to each other, the insulation effect between the two elements is also reduced.
본 고안은 전술한 문제점을 해결하기 위해서 안출된 것으로서, 본 고안의 목적은 광 신호의 손실을 줄이고 절연 효과를 높일 수 있는 포토커플러를 제공하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is to provide a photocoupler that can reduce the loss of the optical signal and increase the insulation effect.
도 1은 종래의 포토커플러의 종단면도1 is a longitudinal cross-sectional view of a conventional photocoupler
도 2는 본 고안의 일 실시예에 의한 포토커플러의 종단면도2 is a longitudinal sectional view of a photocoupler according to an embodiment of the present invention
도 3은 도 2의 평면도(내부가 보이는 것으로 가정하고 그린 것)3 is a plan view of FIG. 2 (assuming that the inside is visible)
※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing
10: 제1 발광부 리드 프레임 12: 제2 발광부 리드 프레임10: first light emitting part lead frame 12: second light emitting part lead frame
14: 제1 수광부 리드 프레임 16: 제2 수광부 리드 프레임14: first light receiver lead frame 16: second light receiver lead frame
18: 절곡부 20: 발광 소자18: bent portion 20: light emitting element
30: 수광 소자 40: 내부 봉지재30: light receiving element 40: inner sealing material
50: 외부 봉지재 60: 금속선50: outer encapsulant 60: metal wire
상기 목적을 달성하기 위하여 본 고안에 의한 전류 전달비가 향상된 포토커플러는 제1 발광부 리드 프레임; 상기 제1 발광부 리드 프레임의 선단에 탑재된 발광 소자; 상기 제1 발광부 리드 프레임과 분리되어 있는 제1 수광부 리드 프레임; 상기 제1 수광부 리드 프레임의 선단에 탑재된 수광 소자; 상기 제1 발광부 리드 프레임과 분리되어 있으며 상기 발광 소자와 금속선으로 연결되는 제2 발광부 리드 프레임; 상기 제1 수광부 리드 프레임과 분리되어 있으며 상기 수광 소자와 금속선으로 연결되는 제2 발광부 리드 프레임; 상기 제1 및 제2 발광부 리드 프레임의 선단, 상기 제1 및 제2 수광부 리드 프레임의 선단, 상기 발광 소자, 상기 수광 소자, 및 상기 금속선을 에워싸는 투명한 내부 봉지재; 및 상기 내부 봉지재를 에워싸는 불투명한 외부 봉지재를 포함하되,In order to achieve the above object, a photocoupler having an improved current transfer ratio according to the present invention includes: a first light emitting unit lead frame; A light emitting element mounted at a front end of the first light emitting part lead frame; A first light receiving part lead frame separated from the first light emitting part lead frame; A light receiving element mounted at a front end of the first light receiving unit lead frame; A second light emitting part lead frame separated from the first light emitting part lead frame and connected to the light emitting element by a metal line; A second light emitting part lead frame separated from the first light receiving part lead frame and connected to the light receiving element by a metal line; A transparent inner encapsulant surrounding the front ends of the first and second light emitting part lead frames, the front ends of the first and second light receiving part lead frames, the light emitting element, the light receiving element, and the metal wire; And an opaque outer encapsulant surrounding the inner encapsulant,
상기 발광 소자가 탑재된 제1 발광부 리드 프레임의 선단 및 상기 수광 소자가 탑재된 제1 수광부 리드 프레임의 선단, 그리고 상기 금속선이 각각 연결된 제2 발광부 리드 프레임의 선단 및 제2 수광부 리드 프레임의 선단이 각각 대칭적으로 90°미만의 각도로 절곡되어 있는 것을 특징으로 한다.The front end of the first light emitting unit lead frame on which the light emitting element is mounted, the front end of the first light receiving unit lead frame on which the light receiving element is mounted, and the front end of the second light emitting unit lead frame to which the metal wire is connected, and the second light receiving unit lead frame, respectively. The ends are each symmetrically bent at an angle of less than 90 °.
이하, 첨부된 도면을 참조하여 본 고안을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 2 및 도 3을 참조하면, 본 고안의 포토커플러는 발광 소자(20)가 탑재되는 제1 발광부 리드 프레임(10)의 선단과 수광 소자(30)가 탑재되는 제1 수광부 리드 프레임(14)의 선단, 그리고 금속선(60)이 각각 연결되는 제2 발광부 리드 프레임(12)의 선단과 제2 수광부 리드 프레임(16)의 선단이 각각 대칭적으로 90°미만의 각도로 절곡되어 있는 것이 특징이다. 상기 발광 소자(20)로는 적외선 발광 다이오드가, 상기 수광 소자(30)로는 광 트랜지스터가 바람직하다.2 and 3, the photocoupler of the present invention has a front end of the first light emitting unit lead frame 10 on which the light emitting element 20 is mounted and a first light receiving unit lead frame 14 on which the light receiving element 30 is mounted. ), And the tip of the second light emitting part lead frame 12 and the tip of the second light receiving part lead frame 16 to which the metal wire 60 is connected, respectively, are symmetrically bent at an angle of less than 90 °. It is characteristic. An infrared light emitting diode is preferable as the light emitting element 20, and a photo transistor is preferable as the light receiving element 30.
이렇게 절곡부(18)가 존재함으로써 종래의 포토커플러에 비해 직사광(A)의 양이 증가되고 굴절광(B)과 반사광(C)의 양이 감소된다. 굴절광(B)과 반사광(C)은 직사광(A)에 비해 광 신호 전달의 효율이 떨어지기 때문에, 그 효율이 좋은 직사광(A)의 양이 많은 본 고안의 포토커플러는 종래의 포토커플러에 비해 전류 전달비(current transfer ratio: CTR)가 커지게 된다.The presence of the bent portion 18 increases the amount of direct light A and decreases the amount of refracted light B and reflected light C as compared with the conventional photocoupler. Since the refractive light (B) and the reflected light (C) is less efficient in optical signal transmission than the direct light (A), the photocoupler of the present invention, which has a large amount of direct light (A) with good efficiency, In comparison, the current transfer ratio (CTR) becomes large.
또한 이러한 구조는 절곡에 의해서 발광 소자(20)와 수광 소자(30)간의 거리를 종래의 경우보다 늘리는 효과를 가져와 절연 효과가 커지게 된다.In addition, such a structure has an effect of increasing the distance between the light emitting element 20 and the light receiving element 30 by bending, and thus increases the insulation effect.
본 고안의 포토커플러의 제조 방법을 살펴보면, 먼저 제1 발광부 리드 프레임(10)의 선단에 발광 소자(20)를 도전성 접착제로 접착시키고, 마찬가지로 제1 수광부 리드 프레임(14)의 선단에 수광 소자(30)를 도전성 접착제로 접착시킨다.Referring to the manufacturing method of the photocoupler of the present invention, first, the light emitting element 20 is adhered to the tip of the first light emitting part lead frame 10 with a conductive adhesive, and similarly, the light receiving element is attached to the front end of the first light receiving part lead frame 14. (30) is bonded with a conductive adhesive.
다음에 발광 소자(20)와 제2 발광부 리드 프레임(12) 사이, 그리고 수광 소자(30)와 제2 수광부 리드 프레임(16) 사이를 각각 금속선(60)으로 연결하여 전극을 형성한다.Next, an electrode is formed by connecting the light emitting element 20 and the second light emitting unit lead frame 12 and the light receiving element 30 and the second light receiving unit lead frame 16 with metal lines 60, respectively.
이후 발광 소자(20)가 접착된 제1 발광부 리드 프레임(10)의 선단과 수광 소자(30)가 접착된 제1 수광부 리드 프레임(14)의 선단, 그리고 금속선(60)이 각각 연결되는 제2 발광부 리드 프레임(12)의 선단과 제2 수광부 리드 프레임(16)의 선단을 90°미만의 각도로 구부린다.Thereafter, the front end of the first light emitting unit lead frame 10 to which the light emitting device 20 is bonded, the front end of the first light receiving unit lead frame 14 to which the light receiving element 30 is bonded, and the metal wire 60 are respectively connected. 2 The tip of the light emitting part lead frame 12 and the tip of the second light receiving part lead frame 16 are bent at an angle of less than 90 °.
다음에 제1 및 제2 발광부 리드 프레임(10, 12)의 선단, 제1 및 제2 수광부 리드 프레임(14, 16)의 선단, 발광 소자(20), 수광 소자(30), 및 금속선(60)을 에워싸도록 투명한 내부 봉지재(40)로 성형한다. 상기 내부 봉지재(40)로는 광 투과성 절연체인 실리콘 수지가 바람직하다.Next, the front ends of the first and second light emitting part lead frames 10 and 12, the front ends of the first and second light receiving part lead frames 14 and 16, the light emitting element 20, the light receiving element 30, and the metal wire ( 60 is molded into a transparent inner encapsulant 40 to enclose it. The inner encapsulant 40 is preferably a silicone resin that is a light transmissive insulator.
이후 상기 내부 봉지재(40)를 에워싸도록 불투명한 절연 수지인 외부 봉지재(50)로 성형하여 제품을 완성한다.Thereafter, the inner encapsulant 40 is molded into an outer encapsulant 50 which is an opaque insulating resin to surround the finished product.
본 고안의 포토커플러는 수광 소자가 발광 소자로부터 전달받는 직사광의 양을 증가시켜 전류 전달비를 높여 고효율의 제품을 실현함과 동시에, 발광 소자와 수광 소자간의 거리를 늘림으로써 두개의 반도체 소자간의 절연 효과를 향상시켜 최고의 성능을 발휘하게 한다.The photocoupler of the present invention increases the amount of direct light received from the light emitting device to increase the current transmission ratio, thereby realizing a high efficiency product and increasing the distance between the light emitting device and the light receiving device to insulate the two semiconductor devices. Enhance the effect to get the best performance.
이상에서 살펴본 본 고안은 기재된 구체적인 예에 대해서만 상세히 설명되었지만, 본 고안의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 실용신안등록청구범위에 속함은 당연한 것이다.Although the present invention described above has been described in detail only with respect to the specific examples described, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims of utility model registration. Is a matter of course.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
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| KR20-2003-0008131U KR200317021Y1 (en) | 2003-03-19 | 2003-03-19 | Photocoupler having high current transfer ratio |
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| Application Number | Priority Date | Filing Date | Title |
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| KR20-2003-0008131U KR200317021Y1 (en) | 2003-03-19 | 2003-03-19 | Photocoupler having high current transfer ratio |
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