JPH118404A - Optically coupling element and its manufacture - Google Patents
Optically coupling element and its manufactureInfo
- Publication number
- JPH118404A JPH118404A JP13590498A JP13590498A JPH118404A JP H118404 A JPH118404 A JP H118404A JP 13590498 A JP13590498 A JP 13590498A JP 13590498 A JP13590498 A JP 13590498A JP H118404 A JPH118404 A JP H118404A
- Authority
- JP
- Japan
- Prior art keywords
- light
- lead frame
- optical coupling
- light emitting
- coupling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本願発明は、従来、透過形光
結合素子の低い絶縁性を改善し、製造の複雑化を解決し
て小さいパッケージ（PACKAGE:4PIN類、ARRAY包含）にも
適用ができるようにすると共に、製造が簡単で、かつ使
用が容易で、高信頼性を保障する光結合素子を提供しよ
うとするものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention can be applied to a small package (including PACKAGE: 4 PINs and ARRAY) by improving the low insulation property of a transmission type optical coupling element and solving the complexity of manufacturing. In addition, it is an object of the present invention to provide an optical coupling element which is easy to manufacture and easy to use and guarantees high reliability.
【０００２】[0002]
【発明が解決しようとする課題】一般に、光結合素子は
入力電流により光を発散する発光素子とその発光素子か
ら発散される光を電流に変換する受光素子を一つのパッ
ケージ内に備えた装置であって、入出力間には電気的に
全く絶縁されており、出力信号が入力信号に影響を及ば
ない単方向性素子であり、発光素子として電流の変換効
率（光−電変換効率）が良い赤外発光ダイオードと可視
発光ダイオードが使用され、受光素子として出力特性が
良好なホトトランジスタ、ホトトライアック及びホトロ
ジック等が使用されている。その応用は、回路におい
て、電位差が違い両回路間の交互作用と高速光大域信号
伝達等に広く使用されている。添付の図面の図１は、上
記のような機能を有する従来の光透過性絶縁体を用いた
透過形光接合素子の構造を示したものである。In general, an optical coupling device is a device including a light emitting element that emits light by an input current and a light receiving element that converts light emitted from the light emitting element into a current in one package. In addition, the input and output are electrically insulated completely, and the output signal is a unidirectional element that does not affect the input signal. The light emitting element has a high current conversion efficiency (light-to-electric conversion efficiency). An infrared light emitting diode and a visible light emitting diode are used, and a phototransistor, a phototriac, a photologic or the like having good output characteristics is used as a light receiving element. Its application is widely used in a circuit, in which a potential difference is different, an interaction between the two circuits, a high-speed optical global signal transmission, and the like. FIG. 1 of the accompanying drawings shows the structure of a conventional transmissive optical junction device using a conventional light transmissive insulator having the above functions.
【０００３】このような構造の透過形光結合素子は伝導
性が優れたリードフレーム（１１）（１２）に発光素子
（１３）と受光素子（１４）を各々高伝導性接着剤で接
着した後、金属細金線（１５）（１６）でチップの電極
と指定されたリードフレーム部に熔融接着させ、相互対
向配置のために指定された機構により固定した後、リー
ドフレームの指定された部位を溶接する。次に、光透過
性絶縁体（１７）を塗布して光通路を形成した後、黒色
エポキシ樹脂（２０）でトランスファモールディングし
て光結合素子を製造することになる。このように製造さ
れるシリコンレンジを用いた透過形光結合素子は入力部
へ電流が入力されると発光素子（１３）が発光すること
になり、その発散される光は形成された光伝達経路を通
して受光素子（１４）に伝達され、受光素子（１４）は
その伝達される光を電流に変換するようになる。In the transmission type optical coupling device having such a structure, a light emitting device (13) and a light receiving device (14) are bonded to a lead frame (11) (12) having excellent conductivity with a highly conductive adhesive. Then, the metal electrodes (15) and (16) are melt-bonded to the chip electrodes and the designated lead frame portion, and fixed by a mechanism designated for mutual arrangement, and then the designated portion of the lead frame is removed. Weld. Next, a light-transmitting insulator (17) is applied to form an optical path, and then transfer-molded with a black epoxy resin (20) to manufacture an optical coupling device. In the transmission type optical coupling device using the silicon range manufactured as described above, when a current is input to the input portion, the light emitting device (13) emits light, and the divergent light is transmitted through the formed light transmission path. To the light receiving element (14), and the light receiving element (14) converts the transmitted light into a current.
【０００４】しかし、このような従来のシリコンレンジ
を用いた透過形光結合素子は発光素子（１３）と受光素
子（１４）とが相互対向されるように配置されているの
で距離に制限される問題があった。即ち、相互距離を近
くすると光伝達効率は良くなるが、光透過性絶縁体（１
７）とエポキシ樹脂（２０）との接着力が欠けている
し、発光素子（１３）と受光素子（１４）との短い絶縁
距離によりその界面（１７、２０）に電気的漏洩が容易
に発生されて絶縁低下の問題点があり、これとは別にそ
の絶縁距離を確保するため、距離を増加させると広い距
離により光伝達効率が低下され、かつ、界面（１７）
（２０）の接着力欠如により絶縁向上がないという問題
点が生じる。従って、かかる構造の透過形光結合素子は
大きい絶縁耐圧用には適用することができなく、その絶
縁体の内部の金属細金線（１５）（１６）も低くしなけ
ればならないという問題がある。However, in such a conventional transmission type optical coupling element using a silicon range, the distance is limited because the light emitting element (13) and the light receiving element (14) are arranged so as to face each other. There was a problem. That is, the light transmission efficiency is improved when the distance between them is short, but the light transmissive insulator (1
7) lacks adhesive strength between the epoxy resin (20) and the short insulation distance between the light emitting element (13) and the light receiving element (14), easily causing electrical leakage at the interface (17, 20). In addition, there is a problem that the insulation is reduced. Apart from this, in order to secure the insulation distance, if the distance is increased, the light transmission efficiency is reduced by a large distance, and the interface (17)
There is a problem that insulation is not improved due to the lack of adhesive force of (20). Therefore, the transmission type optical coupling element having such a structure cannot be applied to a device with a large withstand voltage, and there is a problem that the metal fine gold wires (15) and (16) inside the insulator must be lowered. .
【０００５】そして、各々のリードフレーム（１１）
（１２）に対し、機械的に溶接しなければならないとい
う煩わしさがあり、リードフレーム（１１）（１２）自
体の偏差により最適のチップマウントをしても対向配置
がずれることになって、光伝達効率を低下させる問題が
あった。また、発光素子（１３）が発光する場合（体面
発光）、光透過性絶縁体（１７）の外部が黒色エポキシ
樹脂（２０）から成っているので、光の一部が受光素子
（１４）に達する前に吸収され光出力効率を低下させる
等の問題点もあった。従来、光結合素子のまた別の構造
にあって、添付図面の図２は光透過性絶縁体を用いた反
射形光結合素子の構造を示したものである。Then, each lead frame (11)
In contrast to (12), there is an inconvenience that the welding must be performed mechanically, and the opposing arrangement is shifted even if the optimal chip mount is performed due to the deviation of the lead frames (11) and (12). There was a problem that transmission efficiency was reduced. When the light emitting element (13) emits light (body emission), a part of the light is transmitted to the light receiving element (14) because the outside of the light transmitting insulator (17) is made of the black epoxy resin (20). There is also a problem that the light is absorbed before reaching the temperature and the light output efficiency is reduced. FIG. 2 of the accompanying drawings shows a structure of a reflection type optical coupling device using a light transmitting insulator, which is another structure of a conventional optical coupling device.
【０００６】上記の如き光透過性絶縁体を用いた反射形
光結合素子は、伝達性が優れ、Ｖ溝（７１）（７２）を
有するリードフレーム（２１）（２２）の同一平面上に
発光素子（２３）と受光素子（２４）を各々高伝導性接
着剤で接着した後、金属細金線（２５）（２６）でチッ
プの電極と指定されたリードフレーム部に熔融接着さ
せ、光透過性のシリコン樹脂（２７）で光の伝達通路を
形成し、外壁に反射性絶縁体（２８）（２９）を塗布し
た後、黒色エポキシ樹脂（３０）でトランスファモール
デングして製造する。また別の製造方法では、シリコン
樹脂（２７）で光の伝達通路を形成する工程までは同様
であり、その後に反射性絶縁体（２８）（２９）を使用
しなく、白色フィラー（FILLER）を含んだエポキシ樹脂
（３０）のみでモールデングして製造することになる。The reflection type optical coupling element using the light transmitting insulator as described above has excellent transmission properties and emits light on the same plane of the lead frames (21) and (22) having the V-grooves (71) and (72). After the element (23) and the light receiving element (24) are bonded with a highly conductive adhesive, they are melt-bonded to the chip electrode and the designated lead frame with fine metal wires (25) and (26), and light is transmitted. A light transmission path is formed with a transparent silicon resin (27), and reflective insulators (28) and (29) are applied to the outer wall, and then transfer molding is performed with a black epoxy resin (30). In another manufacturing method, the process is the same up to the step of forming a light transmission path with the silicone resin (27), and thereafter the white filler (FILLER) is added without using the reflective insulators (28) and (29). It will be manufactured by molding only with the epoxy resin (30) that contains it.
【０００７】しかし、このような工程により製造される
光透過性絶縁体を利用した反射形光結合素子も発光素子
（２３）と受光素子（２４）との間隔制限により透過性
シリコン樹脂（２７）の塗布に限界があって、絶縁耐圧
を増加させることができないという問題点が生じた。併
せて、反射性絶縁体（２８）（２９）で反射膜を塗布し
てから硬化させると、接着力が低くなって、エポキシモ
ールディング（３０）後、界面が発生し、高絶縁耐圧を
克服することができないという問題点もあった。そし
て、光透過性シリコン樹脂（２７）で光通路を形成する
際、その形状が円形や楕円形であるが、その形状が下面
まで成しており、発光素子（２３）の発光後、下面に反
射された光は受光素子（２４）側に達することができな
いので光出力特性を低下させるという問題点が生じる。However, the reflection type optical coupling element using the light transmitting insulator manufactured by such a process also has a transmission silicon resin (27) due to a limitation on a distance between the light emitting element (23) and the light receiving element (24). There is a problem that there is a limit in the application of the resin and it is impossible to increase the dielectric strength. At the same time, when a reflective film is applied with the reflective insulators (28) and (29) and then cured, the adhesive strength is reduced, an interface is generated after the epoxy molding (30), and the high dielectric strength is overcome. There was also a problem that it was not possible. When an optical path is formed with the light-transmitting silicone resin (27), the shape is circular or elliptical, but the shape extends to the lower surface. Since the reflected light cannot reach the light receiving element (24) side, there is a problem that the light output characteristic is deteriorated.
【０００８】[0008]
【問題を解決するための手段】ここに、本発明は上記の
如き従来の光結合素子等の諸般問題点を解決するために
提案されたものであって、本発明の目的は、従来の透過
形と反射形光結合素子の低い絶縁特性と光電流伝達比を
改善し、かる製造の複雑化を解決して小さいパッケージ
（PACKAGE:4PIN類、ARRAY包含）にも適用することができ
るようにすると共に、製造が簡単で、かつ使用が容易
で、高信頼性を保障する光結合素子を提供することにあ
る。SUMMARY OF THE INVENTION Here, the present invention has been proposed to solve the various problems of the conventional optical coupling device and the like as described above. To improve the low insulation characteristics and the photocurrent transfer ratio of the optical coupling device and the reflection type, and to solve the complexity of manufacturing, so that it can be applied to small packages (including PACKAGE: 4PINs and ARRAY) Another object of the present invention is to provide an optical coupling element which is easy to manufacture and easy to use and guarantees high reliability.
【０００９】かかる発明の目的を達成するための方法
は、伝導性が優れたリードフレームの同一平面上に発光
素子と受光素子を各々高伝導性接着剤で接着させる第１
の工程と、上記第１の工程後、金属細金線で上記発光素
子及び受光素子の電極と指定されたリードフレーム部を
熔融接着させる第２の工程と、上記発光素子と受光素子
が接着される下部リードフレーム及びそのリードフレー
ムの間に成形された絶縁性物体を挿入する第３の工程
と、上記発光素子と受光素子を含む周辺部の上面のみを
光透過性シリコン樹脂で塗布して光伝達通路を形成する
第４の工程と、上記光透過性シリコン樹脂の外壁の上面
を高接着性絶縁体で塗布した後、その上を黒色エポキシ
樹脂でトランスファモールディングする第５の工程から
なる。以下、本願発明の望ましい実施の形態を添付の図
面に基づいて詳細に説明すると次の通りである。A method for achieving the object of the present invention is to provide a first method in which a light emitting element and a light receiving element are respectively bonded on the same plane of a highly conductive lead frame with a highly conductive adhesive.
And a second step in which after the first step, the electrodes of the light emitting element and the light receiving element and the designated lead frame portion are melt-bonded with a thin metal wire, and the light emitting element and the light receiving element are bonded. A third step of inserting a lower lead frame and an insulating object molded between the lead frames, and applying a light-transmitting silicone resin to only the upper surface of the peripheral portion including the light-emitting element and the light-receiving element. The method includes a fourth step of forming a transmission passage, and a fifth step of applying the upper surface of the outer wall of the light-transmitting silicone resin with a high-adhesion insulator and then transfer-molding the upper surface with a black epoxy resin. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
【００１０】[0010]
【発明の実施の形態】図３の（Ａ）及び（Ｂ）は本願発
明の１実施形態に係る半透過性エポキシ樹脂のFLAT型絶
縁体（或はＴ型）を用いた反射形光結合素子の第１の構
造図（DIP 型）であり、図５の（Ａ）及び（Ｂ）は本発
明による半透過性エポキシ樹脂のFLAT型絶縁体（或はＴ
型）を用いた反射形光結合素子の別の構造図（MFP 型−
GULL−WING型）である。ここで、DIP 型の反射形光結
合素子の制動工程と GULL −WING型のMFP 小型製造工程
は同様なので、重複の記載を避けるために作用を共に説
明する。先ず、伝導性が優れ、“Ｖ溝”（７１）（７
２）を有するリードフレーム（３１）（３２）（５１）
（５２）の同一平面上に発光素子（３３）（５３）と受
光素子（３４）（５４）を各々高伝導性接着剤で接着し
た後、金属細金線（３５）（３６）（５５）（５６）で
その発光素子（３３）（５３）及び受光素子（３４）
（５４）の電極と指定されたリードフレーム部を熔融接
着させることになる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 3A and 3B show a reflection type optical coupling device using a translucent epoxy resin FLAT type insulator (or T type) according to an embodiment of the present invention. FIG. 5 is a first structural diagram (DIP type), and FIGS. 5A and 5B are FLAT type insulators (or T.sub.T) of a semi-permeable epoxy resin according to the present invention.
Of another structure of the reflection type optical coupling device using the (MFP type)
GULL-WING type). Here, the braking process of the DIP-type reflective optical coupling device is the same as the GULL-WING-type MFP small-sized manufacturing process, and therefore the operation will be described together to avoid redundant description. First, the conductivity is excellent, and the “V groove” (71) (7)
Lead frame (31) (32) (51) having 2)
After the light emitting elements (33) and (53) and the light receiving elements (34) and (54) are respectively bonded on the same plane of (52) with a highly conductive adhesive, fine metal wires (35), (36) and (55). At (56), the light emitting elements (33) and (53) and the light receiving element (34)
The electrode of (54) and the designated lead frame portion are melt-bonded.
【００１１】以後、順次に発光素子（３３）（５３）と
受光素子（３４）（５４）のリードフレーム（３１）
（３２）（５１）（５２）の間に絶縁性を向上させ、シ
リコン樹脂の流れを決定するために、Ｔ字型で成形され
た半透明エポキシ樹脂又は関連された絶縁性物体（３
９）（５９）を上記リードフレーム（３１）（３２）
（５１）（５２）の上面より高いか又は等しい位置にな
るよう挿入し、リードフレームに熱を印加した状態で光
透過性シリコン樹脂（３７）（５７）を塗布して上記発
光素子（３３）（５３）及び受光素子（３４）（５４）
を含む周辺部の上面のみをドーム（DOME）形状（ボート
型）の光伝達通路を形成することになる。上記のような
工程によりドーム形状を作った後、反射膜とエポキシ樹
脂との界面密着力向上と光反射力を増加させるために反
射性絶縁体が全く硬化した後にもねっとりした高接着力
と光反射力を有する反射性フィラーが含まれた硬化性樹
脂（３８）（５８）で外壁の上面を塗布した後、黒色エ
ポキシ樹脂（４０）（６０）でトランスファモールディ
ングして光結合素子を製造することになる。Thereafter, the lead frames (31) of the light emitting elements (33) and (53) and the light receiving elements (34) and (54) are sequentially arranged.
(32) In order to improve the insulation between (51) and (52) and determine the flow of the silicone resin, a T-shaped translucent epoxy resin or an associated insulating body (3)
9) (59) is replaced with the lead frame (31) (32)
(51) Insert so as to be at a position higher or equal to the upper surface of (52), apply light transmissive silicone resin (37) (57) while applying heat to the lead frame, and apply the light emitting element (33) (53) and light receiving elements (34) and (54)
Only the upper surface of the peripheral portion including the above forms a dome-shaped (boat-shaped) light transmission passage. After making the dome shape by the above-mentioned process, the adhesive and light adhered even after the reflective insulator was completely cured to improve the interfacial adhesion between the reflective film and the epoxy resin and increase the light reflectivity. After the upper surface of the outer wall is coated with a curable resin (38) (58) containing a reflective filler having a reflective power, transfer molding is performed with a black epoxy resin (40) (60) to manufacture an optical coupling device. become.
【００１２】このように製造される本実施形態に係る光
結合素子の特徴は、発光素子と受光素子の両方の絶縁性
を向上させ、光透過性シリコン樹脂（３７）（５７）の
流れを決定するために突起形態で成形された絶縁性半透
明エポキシ樹脂、又は、絶縁性物質（３９）（５９）を
発光素子（３３）（５３）と受光素子（３４）（５４）
のリードフレーム（３１）（３２）（５１）（５２）の
間に自動挿入器により挿入した。The characteristics of the optical coupling device according to the present embodiment manufactured as described above are such that the insulating properties of both the light emitting device and the light receiving device are improved, and the flow of the light transmitting silicone resin (37) (57) is determined. In order to achieve this, an insulative translucent epoxy resin or an insulative substance (39) (59) molded in the form of a protrusion is used for the light emitting elements (33) (53) and the light receiving elements (34) (54)
Between the lead frames (31), (32), (51), and (52).
【００１３】又、光透過性のシリコン樹脂（３７）（５
７）でドーム型の光伝達通路（上面）を作るためにリー
ドフレームの固定部に温度調節機能を有する装備を設け
て熱的に光透過性樹脂（３５）（５７）の流れと形状を
決定させる。併せて、絶縁距離が短いリードフレームの
側界面において、反射性物体（３８）（５８）と黒色エ
ポキシ樹脂（４０）（６０）の密着力低下により発生さ
れる界面の密着力を上げ、電気的な光効率低下防止を上
げるために反射性絶縁体が全く硬化した後にもねっとり
した高接着力と光反射力を有する反射性フィラーが含ま
れた硬化性樹脂（３８）（５８）を使用して、トランス
ファモールディングされた黒色エポキシ樹脂（４０）
（６０）との内部の界面をゼロ（０）化し、シリコン樹
脂の流れを“Ｖ溝”（７１）（７２）（７３）（７４）
と内部絶縁体（３９）（５９）により抑えることにより
上面のみに光が充分に伝達されるようにした。The light-transmitting silicone resin (37) (5)
In step 7), a device having a temperature control function is provided at the fixed portion of the lead frame to form a dome-shaped light transmission path (upper surface), and the flow and shape of the light-transmitting resin (35) (57) are determined thermally. Let it. At the same time, at the side interface of the lead frame having a short insulation distance, the adhesion at the interface generated by the decrease in the adhesion between the reflective objects (38) and (58) and the black epoxy resin (40) and (60) is increased, and the electrical resistance is increased. Use of curable resin (38) (58) containing a reflective filler having high adhesive strength and light reflectivity that has been soaked even after the reflective insulator has been completely cured in order to increase the prevention of light efficiency reduction Transfer molded black epoxy resin (40)
The internal interface with (60) is made zero (0), and the flow of the silicon resin is changed to “V-groove” (71) (72) (73) (74)
And the internal insulators (39) and (59) to sufficiently transmit light only to the upper surface.
【００１４】また、シリコン樹脂の流れの抑え手段によ
りリードフレーム（３１）（３２）（５１）（５２）の
“Ｖ溝”（７１〜７４）を“Λ”形状の突起（７１′〜
７４′）により形成することもできることを特徴とす
る。特に、本発明は既存の円形や楕円形のドーム形態を
脱皮してボート型の光反射領域のみをドームに形成（３
７、５７−上面）し、下面は高絶縁性の半透明性の絶縁
体（３９、５９）のみを適用させて絶縁耐圧を上昇させ
ることと共に、別途に反射膜を形成させる必要がないの
で製造工程が単純化される。添付図面の図４は本発明に
よる半透過性エポキシ樹脂のCPU 型絶縁体を用いた反射
形光結合素子の構造図（DIP 型）であり、図６は本発明
による半透過性エポキシ樹脂のCUP 型絶縁体を用いた反
射形光結合素子の別の構造図（MFP 型− GULL −WING
型）である。The "V-grooves" (71-74) of the lead frames (31), (32), (51) and (52) are formed by means of suppressing the flow of the silicon resin so that the "-" shaped protrusions (71'-71) are formed.
74 '). In particular, the present invention removes the existing circular or elliptical dome shape and forms only the boat-shaped light reflection area on the dome (3.
7, 57-upper surface), and the lower surface is manufactured by applying only a highly insulating translucent insulator (39, 59) to increase the dielectric strength and eliminate the need to separately form a reflective film. The process is simplified. FIG. 4 of the accompanying drawings is a structural diagram (DIP type) of a reflection type optical coupling device using a semi-transparent epoxy resin CPU type insulator according to the present invention, and FIG. 6 is a semi-transparent epoxy resin CUP according to the present invention. Structural diagram of a reflection type optical coupling device using a type insulator (MFP type-GULL-WING
Type).
【００１５】図示のように、半透過性エポキシ樹脂のCU
P 型絶縁体（４９）が設けられ、伝送性が優れたリード
フレーム（４１）（４２）（６１）（６２）の同一平面
上に発光素子（４３）（６３）と受光素子（４４）（６
４）を各々高伝導性接着剤で接着した後、金属細金線
（４５）（４６）（６５）（６６）でその発光素子（４
３）（６３）及び受光素子（４４）（６４）の電極と指
定されたリードフレーム部を熔融接着させる。次に、リ
ードフレームに熱を印加した状態で光透過性シリコン樹
脂（４７）（６７）で任意の形状の光伝達通路を形成す
ることになるが、この時、光伝達通路の形状は上記CUP
型の絶縁性物体（４９）（６９）の両端と内壁が接し、
同一な高さになるようフラット（FLAT）型の形状にな
る。そして、高接着力と光反射力を有する反射性フィラ
ーを含んだ硬化性樹脂（４８）（６８）でシリコン樹脂
（４７）（６７）の上面を所定の厚さで塗布した後、黒
色エポキシ樹脂（５０）（７０）でトランスファモール
ディングをして光結合素子を製造することになる。As shown, the semi-permeable epoxy resin CU
A light emitting element (43) (63) and a light receiving element (44) (44) are provided on the same plane of a lead frame (41) (42) (61) (62) provided with a P-type insulator (49) and having excellent transmission properties. 6
After bonding each of the light-emitting elements (4) with a highly conductive adhesive, the light-emitting element (4) was thinned with a fine metal wire (45) (46) (65) (66).
3) The electrodes of (63) and the light receiving elements (44) and (64) are fused to the designated lead frame portion. Next, an optical transmission path having an arbitrary shape is formed of the optically transparent silicone resin (47) (67) in a state in which heat is applied to the lead frame.
Both ends of the insulating body (49) (69) of the mold contact the inner wall,
It becomes a flat (FLAT) shape so that it is the same height. Then, the upper surfaces of the silicone resins (47) and (67) are applied to a predetermined thickness with a curable resin (48) (68) containing a reflective filler having a high adhesive force and a light reflecting power. In steps (50) and (70), transfer molding is performed to manufacture an optical coupling device.
【００１６】[0016]
【発明の効果】前記したように、本願発明は、リードフ
レームの下面とそのリードフレームの間に突起がある半
透明エポキシ樹脂の成形絶縁体を挿入することにより絶
縁特性を改善したのであり、温度調節機能を有する装備
を設置することにより短い時間内に（１分以内）１次シ
リコン樹脂の硬化が成されるので製造の自動化が可能で
あり、１次硬化された光透過性シリコン樹脂に反射性樹
脂を注入する際、樹脂の流動性が良いので上面尖頭部の
みに注入すると１分後には全体的に上面部に塗布され、
リードフレーム（３１）（３２）（５１）（５２）の
“Ｖ溝”前まで抑えられて製造力と信頼度の向上を図る
ことができる。また、本発明によるボート型またはフラ
ット型の反射膜がリードフレームを充分に覆い被せてい
るので内外部絶縁性を向上させることもできる。As described above, according to the present invention, the insulating property is improved by inserting a semi-transparent epoxy resin molded insulator having a projection between the lower surface of the lead frame and the lead frame. By installing the equipment having the adjusting function, the primary silicone resin is cured within a short time (within 1 minute), so that the production can be automated and the primary cured light-transmitting silicone resin is reflected. When infusing the conductive resin, if the resin has good fluidity, if it is injected only to the top of the top, it will be applied to the entire top after 1 minute,
The lead frames (31), (32), (51), and (52) are suppressed to the position before the "V-groove", so that the productivity and reliability can be improved. In addition, since the boat-type or flat-type reflection film according to the present invention sufficiently covers the lead frame, it is possible to improve internal and external insulation.
【図１】従来技術における、光透過姓絶縁体を用いた透
過形光結合素子の構造図である。FIG. 1 is a structural view of a transmission type optical coupling element using a light transmission insulator in a conventional technique.
【図２】従来技術における、光透過性絶縁体を用いた反
射形光結合素子の構造図である。FIG. 2 is a structural view of a reflection-type optical coupling element using a light-transmitting insulator according to the related art.
【図３】（Ａ）及び（Ｂ）は、本願発明による反透過性
エポキシ樹脂の絶縁体（FLAT型）を用いた反射形光結合
素子の第１の構造図（DIP 型）である。FIGS. 3A and 3B are first structural diagrams (DIP type) of a reflection type optical coupling element using an anti-transmissive epoxy resin insulator (FLAT type) according to the present invention.
【図４】本発明による半透過性エポキシ樹脂の絶縁体
（CPU 型）を用いた反射形光結合素子の第２の構造図
（DIP 型）である。FIG. 4 is a second structural diagram (DIP type) of a reflection type optical coupling device using a semi-transmissive epoxy resin insulator (CPU type) according to the present invention.
【図５】（Ａ）及び（Ｂ）は、本発明による半透過性エ
ポキシ樹脂の絶縁体（FLAT型）を用いた反射形光結合素
子の第３の構造図（MFP 型− GULL −WING型）である。FIGS. 5A and 5B are third structural diagrams (MFP type-GULL-WING type) of a reflection type optical coupling device using a semi-permeable epoxy resin insulator (FLAT type) according to the present invention; ).
【図６】本発明による反透過性エポキシ樹脂の絶縁体
（CPU 型）を用いた反射形光結合素子の第４の構成図
（MFP 型− GULL −WING型）である。FIG. 6 is a fourth configuration diagram (MFP type-GULL-WING type) of a reflection type optical coupling element using an anti-transmissive epoxy resin insulator (CPU type) according to the present invention.
３１、３２、４１、４２、５１、５２、６１、６２ リ
ードフレーム ３３、４３、５３、６３ 発光素子 ３４、４４、５４、６４ 受光素子 ３５、３６、４５、５５、５６、６５、６６ 金属細金
線 ３７、４７、５７、６７ シリコン樹脂 ３８、４８、５８、６８ 反射性絶縁体 ３９、４９、５９、６９ 半透過性絶縁体 ４０、５０、６０、７０ 黒色エポキシ樹脂31, 32, 41, 42, 51, 52, 61, 62 Lead frame 33, 43, 53, 63 Light emitting element 34, 44, 54, 64 Light receiving element 35, 36, 45, 55, 56, 65, 66 Fine metal Gold wire 37, 47, 57, 67 Silicon resin 38, 48, 58, 68 Reflective insulator 39, 49, 59, 69 Semi-transmissive insulator 40, 50, 60, 70 Black epoxy resin
Claims (13)
（３２）（５１）（５２）の同一平面上に発光素子（３
３）（５３）と受光素子（５３）（５４）を各々高伝導
性接着剤で接着させる第１の工程と、 上記第１の工程後、金属細金線（３５）（３６）（５
５）（５６）で上記発光素子（３３）（５３）及び受光
素子（５３）（５４）の電極と指定されたリードフレー
ム部を熔融接着させる第２工程と、 上記発光素子（３３）（５３）と受光素子（３４）（５
４）が接着される下部リードフレーム及びそのリードフ
レームの間に任意の形状に成形された絶縁性物体（３
９）（５９）を挿入する第３の工程と、 上記発光素子（３３）（５３）と受光素子（３４）（５
４）を含む周辺部の上面のみを光透過性シリコン樹脂
（３７）（５７）で塗布して光伝達通路を形成する第４
の工程と、 上記光透過性シリコン樹脂（３７）（５７）の外壁の上
面のみを高接着反射性絶縁体（３８）（５８）で塗布し
た後、その上を黒色エポキシ樹脂（４０）（６０）でト
ランスファモールディングする第５の工程からなること
を特徴とする光結合素子の製造方法。1. A lead frame having excellent conductivity.
(32) The light emitting element (3) is placed on the same plane of (51) and (52).
3) a first step of bonding the (53) and the light receiving elements (53) and (54) with a highly conductive adhesive, and after the first step, a fine metal wire (35) (36) (5)
5) In step (56), a second step of fusing the electrodes of the light emitting elements (33) and (53) and the light receiving elements (53) and (54) with the designated lead frame portion, and the light emitting elements (33) and (53) ) And the light receiving element (34) (5
4) The lower lead frame to which the adhesive is adhered, and the insulating body (3) formed into an arbitrary shape between the lead frames.
9) a third step of inserting (59), the light emitting elements (33) and (53) and the light receiving elements (34) and (5)
Only the upper surface of the peripheral portion including 4) is coated with a light-transmitting silicone resin (37) (57) to form a light transmission passage.
And applying only the upper surface of the outer wall of the light-transmitting silicone resin (37) (57) with a highly adhesive reflective insulator (38) (58), and then applying a black epoxy resin (40) (60) 5.) A method of manufacturing an optical coupling device, comprising a fifth step of performing transfer molding in (5).
ム（３１）（３２）（５１）（５２）の下面とは接着さ
れ、そのリードフレーム（３１）（３２）（５１）（５
２）の間には両リードフレーム（３１）（３２）（５
１）（５２）の上面よりも高いか、又は等しい突起形態
の絶縁体を挿入することを特徴とする請求項１記載の光
結合素子の製造方法。In the third step, the lower surfaces of both the lead frames (31), (32), (51), and (52) are bonded to each other, and the lead frames (31), (32), (51), (5) are formed.
Between lead 2), both lead frames (31), (32), (5)
1) The method of manufacturing an optical coupling device according to claim 1, wherein an insulator having a projection shape higher or equal to the upper surface of (52) is inserted.
（５９）は絶縁性を向上させ、シリコン樹脂の流れを決
定する絶縁性半透明エポキシ樹脂であることを特徴とす
る請求項１記載の光結合素子の製造方法。3. The insulating body (39) of the third step.
The method according to claim 1, wherein (59) is an insulating translucent epoxy resin that improves the insulating property and determines the flow of the silicone resin.
を印加して光透過性シリコン樹脂（３７）（５７）の流
れと形状を制御して、上記絶縁性物体の両端と内壁が接
し、高さが同一なフラット（FLAT）型の光伝達通路に形
成することを特徴とする請求項１記載の光結合素子の製
造方法。4. The step of applying heat to the lead frame to control the flow and shape of the light-transmitting silicone resin (37) (57) so that both ends of the insulative object come into contact with the inner wall. 2. The method for manufacturing an optical coupling device according to claim 1, wherein the optical coupling device is formed in a flat (FLAT) type light transmission path having the same height.
を印加して光透過性シリコン樹脂（３７）（５７）の流
れと形状を制御して、ボート型の光伝達通路に形成する
ことを特徴とする請求項１記載の光結合素子の製造方
法。5. In the fourth step, the heat is applied to the lead frame to control the flow and shape of the light-transmitting silicone resin (37) (57) to form a boat-shaped light transmission path. The method for manufacturing an optical coupling device according to claim 1, wherein:
（３８）（５８）は反射膜とエポキシ樹脂との界面密着
力の向上と光反射力を増加させるために反射性絶縁体が
全く硬化した後にもねっとりした高接着力と光反射力と
有する反射性フィラーを含んだ硬化性樹脂であることを
特徴とする請求項１に記載の光結合素子の製造方法。6. The high-adhesive reflective insulators (38) and (58) in the fifth step are formed of a reflective insulator for improving the interface adhesion between the reflective film and the epoxy resin and increasing the light reflectivity. The method according to claim 1, wherein the curable resin is a curable resin containing a reflective filler having high adhesive strength and light reflectivity that is sticky even after being completely cured.
（５１）（５２）の一部に透過性及び半透過性樹脂の流
れを抑え、パッケージとリードフレームの間の気密性強
化のためにＶ溝（７１〜７４）を形成することを特徴と
する請求項１に記載の光結合素子の製造方法。7. The lead frames (31) and (32).
(51) V-grooves (71 to 74) are formed in a part of (52) to suppress the flow of the permeable and semi-permeable resin and to enhance the airtightness between the package and the lead frame. A method for manufacturing the optical coupling device according to claim 1.
（５１）（５２）の一部に透過性及び半透過性樹脂の流
れを抑え、パッケージとリードフレームの間の気密性強
化のためにΛ形状の突起（７１′〜７４′）を形成する
ことを特徴とする請求項１に記載の光結合素子の製造方
法。8. The lead frame (31) (32).
(51) Forming Λ-shaped projections (71 ′ to 74 ′) on a part of (52) to suppress the flow of permeable and semi-permeable resin and to enhance airtightness between the package and the lead frame The method for manufacturing an optical coupling device according to claim 1, wherein:
型絶縁体が設けられ、伝導性が優れたリードフレーム
（３１）（３２）（５１）（５２）の同一平面上に発光
素子（３３）（５３）と受光素子（５３）（５４）を各
々高伝導性接着剤で接着させる第１の工程と、上記第１
の工程後、金属細金線（３５）（３６）（５５）（５
６）で上記発光素子（３３）（５３）及び受光素子（５
３）（５４）の電極と指定されたリードフレーム部を熔
融接着させる第２の工程と、 上記発光素子（３３）（５３）と受光素子（３４）（５
４）を含む周辺部の上面のみを光透過性シリコン樹脂
（３７）（５７）で塗布して光伝達通路を形成する第３
の工程と、 上記光透過性シリコン樹脂（３７）（５７）の外壁の上
面を高接着反射性絶縁体（３８）（５８）で塗布した
後、その上を黒色エポキシ樹脂（４０）（６０）でトラ
ンスファモールディングする第４の工程からなることを
特徴とする光結合素子の製造方法。9. Cup of semi-permeable epoxy resin (CUP)
A light emitting element (33) (53) and a light receiving element (53) (54) are provided on the same plane of a lead frame (31) (32) (51) (52) provided with a mold insulator and having excellent conductivity. A first step of bonding with a highly conductive adhesive;
After the step, the metal fine gold wires (35) (36) (55) (5
In 6), the light emitting elements (33) and (53) and the light receiving element (5)
3) a second step of fusing the electrode of (54) with the designated lead frame portion, and the light emitting elements (33) (53) and the light receiving elements (34) (5).
Only the upper surface of the peripheral portion including 4) is coated with a light-transmitting silicone resin (37) (57) to form a third light-transmitting passage.
And applying the upper surface of the outer wall of the light-transmitting silicone resin (37) (57) with a highly adhesive reflective insulator (38) (58), and then applying a black epoxy resin (40) (60) on the upper surface. A fourth step of performing transfer molding by using the method.
の流れを抑えるためのＶ溝（７１）（７２）を有するリ
ードフレーム（３１）（３２）の同一平面上に各々蒸着
されて光を発散し、その発散された光を電気的な信号に
変換する発光素子（３３）及び受光素子（３４）と、 上記発光素子（３３）及び受光素子（３４）を含む周辺
部の上面のみに形成されて上記発光素子（３３）から発
散された光を上記受光素子（３４）に伝達するためのボ
ート（BOAT）型の光伝達通路（３７）と、 上記発光素子（３３）および受光素子（３４）が接着さ
れる下部リードフレーム及びそのリードフレームの間に
絶縁のために挿入されるフラット型の絶縁性物体（３
９）と、 上記光伝達通路の外壁の上、下面に形成された絶縁のた
めの絶縁膜（３８）（３９）を包含してなることを特徴
とする光結合素子。10. Light is deposited on the same plane of lead frames (31) and (32) having excellent conductivity and having V-grooves (71) and (72) for suppressing the flow of transmissive and reflective resins. Light emitting element (33) and light receiving element (34) that diverge light and convert the diverged light into an electric signal, and only on the upper surface of the peripheral portion including the light emitting element (33) and light receiving element (34). A light transmission path (37) of a boat (BOAT) type for transmitting light formed and emitted from the light emitting element (33) to the light receiving element (34); and the light emitting element (33) and the light receiving element ( 34) and a flat type insulated object (3) inserted between the lower lead frame and the lead frame for insulation.
9) and an optical coupling element comprising insulating films (38) and (39) for insulation formed on the upper and lower surfaces of the outer wall of the light transmission path.
フレーム（３１）（３２）（５１）（５２）の一部に形
成されたＶ溝（７１）（７２）または、Λ形状の突起
（７１′）（７２′）前までのみ形成されることを特徴
とする請求項１０に記載の光結合素子。11. The light transmission path (37) is formed in a V-shaped groove (71) (72) formed in a part of the lead frame (31) (32) (51) (52) or a Λ-shaped projection ( The optical coupling device according to claim 10, wherein the optical coupling device is formed only up to (71 ') and (72').
フレーム（３１）（３２）の上面より高いか、又は等し
い位置になるよう挿入することを特徴とする請求項１０
に記載の光結合素子。12. The device according to claim 10, wherein the insulating body is inserted so as to be higher or equal to the upper surface of the lead frame.
4. The optical coupling element according to item 1.
ある場合は、リードフレーム（４１）（４２）に先ず絶
縁性物体（４８）を挿入してから発光素子（４３）及び
受光素子（４４）を蒸着させることを特徴とする請求項
１０に記載の光結合素子。13. When the insulating body (39) is cup-shaped, the insulating body (48) is first inserted into the lead frames (41) and (42), and then the light emitting element (43) and the light receiving element (43). The optical coupling device according to claim 10, wherein (44) is deposited.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR97-16921 | 1997-05-01 | ||
| KR1019970016921A KR100271423B1 (en) | 1997-05-01 | 1997-05-01 | Light couple device and method manufacture of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH118404A true JPH118404A (en) | 1999-01-12 |
Family
ID=19504735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13590498A Withdrawn JPH118404A (en) | 1997-05-01 | 1998-05-01 | Optically coupling element and its manufacture |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH118404A (en) |
| KR (1) | KR100271423B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7009166B2 (en) | 2002-03-26 | 2006-03-07 | Sharp Kabushiki Kaisha | Photocoupler, method for producing the same, and electronic device equipped with the photocoupler |
| CN108735853A (en) * | 2017-04-20 | 2018-11-02 | 亿光电子工业股份有限公司 | Photo-coupler |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101121728B1 (en) | 2008-06-26 | 2012-03-23 | 서울반도체 주식회사 | Led package with heat radiating structure |
-
1997
- 1997-05-01 KR KR1019970016921A patent/KR100271423B1/en not_active IP Right Cessation
-
1998
- 1998-05-01 JP JP13590498A patent/JPH118404A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7009166B2 (en) | 2002-03-26 | 2006-03-07 | Sharp Kabushiki Kaisha | Photocoupler, method for producing the same, and electronic device equipped with the photocoupler |
| CN108735853A (en) * | 2017-04-20 | 2018-11-02 | 亿光电子工业股份有限公司 | Photo-coupler |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980082183A (en) | 1998-12-05 |
| KR100271423B1 (en) | 2000-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20050705 |