KR19980082183A - Optical coupling element and its manufacturing method - Google Patents
Optical coupling element and its manufacturing method Download PDFInfo
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- KR19980082183A KR19980082183A KR1019970016921A KR19970016921A KR19980082183A KR 19980082183 A KR19980082183 A KR 19980082183A KR 1019970016921 A KR1019970016921 A KR 1019970016921A KR 19970016921 A KR19970016921 A KR 19970016921A KR 19980082183 A KR19980082183 A KR 19980082183A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION
광결합소자Optical coupling element
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
종래 광투과성 절연체를 이용한 투과형 광결합소자와 광투과성 절연체를 이용한 반사형 광결합소자에서 발생하는 절연 특성의 저하문제와 제조가 복잡하다는 문제점 및 작은 패키지에도 적용이 불가능하다는 문제를 해결하고자 한 것임.The purpose of the present invention is to solve a problem of deterioration of insulation characteristics, a complicated manufacturing process, and a problem in that it is not applicable to a small package, in a transmission type optical coupling device using a light transmissive insulator and a reflection type optical coupling device using a light transmissive insulator.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
전도성이 우수한 리드프레임(31)(32)(51)(52)의 동일 평면상에 발광소자(33)(53)와 수광소자(53)(54)를 각각 고전도성 접착제로 접착시키는 제1공정과; 상기 제1공정후 금속세금선(35)(36)(55)(56)으로 상기 발광소자(33)(53) 및 수광소자(53)(54)의 전극과 지정된 리드 프레임부를 용융접착시키는 제2공정과; 상기 발광 소자(33)(53)와 수광소자(34)(54)가 접착되는 하부 리드프레임 및 그 리드프레임 사이에 임의 형상으로 성형된 절연성 물체(39)(59)를 삽입하는 제3공정과; 상기 발광소자(33)(53)와 수광소자(34)(54)를 포함하는 주변부의 상면만을 광투과성 실리콘 수지(37)(57)로 도포하여 광 전달 통로를 형성하는 제4공정과; 상기 광투과성 실리콘 수지(37)(57)의 외벽 상면을 고접착 반사설 절연체(38)(58)로 도포한 후 그 위를 흑색 에폭시 수지(40)(60)로 트랜스퍼 몰딩하는 제5공정으로 이루어짐을 특징으로 한 것이다.First step of bonding the light emitting elements 33, 53 and the light receiving elements 53, 54 on the same plane of the lead frames 31, 32, 51, 52 with excellent conductivity, respectively, with a highly conductive adhesive and; After the first process, the metal tax wires 35, 36, 55, 56 are used to melt-bond the electrodes of the light emitting elements 33, 53, and the light receiving elements 53, 54 and the designated lead frame part. 2 step; A third process of inserting the lower lead frame to which the light emitting elements 33 and 53 and the light receiving elements 34 and 54 are attached and the insulating objects 39 and 59 formed in arbitrary shapes between the lower lead frame and the lead frame; ; A fourth step of forming a light transmission path by applying only the upper surface of the peripheral part including the light emitting elements 33, 53 and the light receiving elements 34, 54 to the light transmitting silicone resins 37 and 57; The fifth step of applying the upper surface of the outer wall of the transparent silicone resins (37) and (57) with high adhesion reflective insulators (38) and (58), and transfer molding thereon to black epoxy resins (40) and (60). It is characterized by consisting of.
4. 발명의 중요한 용도4. Important uses of the invention
광-전 변환을 위한 광결합소자에 적용되는 것임.Applied to optical coupling element for photoelectric conversion.
Description
일반적으로, 광결합소자는 입력전류로 빛을 발산하는 발광소자와 그 발광소자에서 발산되는 빛을 전류로 변환하는 수광소자를 하나의 패키지안에 구비한 장치로서, 입출력간에는 전기적으로 완전히 절연되어 있어 출력신호가 입력신호에 영향을 미치지 않는 단방향성 소자이며, 발광소자로서 전류의 변환 효율(광-전변환효율)이 좋은 적외발광 다이오드와 가시발광 다이오드가 사용되며, 수광소자로서 출력 특성이 양호한 포토 트랜지스터와 포토 트라이악, 포토 로직 등이 사용되고 있다.In general, an optical coupling device includes a light emitting device that emits light as an input current and a light receiving device that converts light emitted from the light emitting device into a current in one package. The signal is a unidirectional device which does not affect the input signal, and an infrared light emitting diode and a visible light emitting diode having good current conversion efficiency (photoelectric conversion efficiency) are used as light emitting devices, and phototransistors having good output characteristics as light receiving devices. Photo triacs, photo logic, etc. are used.
그 응용은 회로에 있어서 전위치가 다른 두회로간의 교호작용과 고속 광대역신호 전달 등에 널리 사용되고 있다.The application is widely used for the interaction of two circuits of different positions in the circuit and the transmission of high speed broadband signals.
첨부한 도면 도 1은 상기와 같은 기능을 갖는 종래 광투과성 절연체를 이용한 투과형 광결합소자의 구조를 나타낸 것이다.1 is a view illustrating a structure of a transmissive optical coupling device using a conventional optically transparent insulator having the same function as described above.
이러한 구조의 투과형 광결합소자는 전도성이 우수한 리드프레임(11)(12)에 발광소자(13)와 수광소자(14)를 각각 고전도성 접착제로 접착한 후, 금속세금선(15)(16)으로 칩의 전극과 지정된 리드 프레임부에 용융 접착시키고, 상호 대향배치를 위해 지정된 기구에 의해 고정한 후 리드 프레임의 지정된 부위를 용접한다.The transmissive photocoupling device having such a structure adheres the light emitting element 13 and the light receiving element 14 to the lead frames 11 and 12 having excellent conductivity, respectively, with a high conductive adhesive, and then the metal tax wires 15 and 16 are attached. Then, the electrode is melt-bonded to the electrode of the chip and the designated lead frame portion, and fixed by the designated mechanism for mutual placement. Then, the designated portion of the lead frame is welded.
그 다음에 광투과성 절연체(17)를 도포하여 광 통로를 형성한 후 흑색 에폭시 수지(20)로 트랜스퍼 몰딩을 하여 광결합소자를 제조하게 된다.Then, the light-transmitting insulator 17 is applied to form a light path, and then transferred to the black epoxy resin 20 to manufacture an optical coupling device.
이렇게 제조되는 실리콘 레진을 이용한 투과형 광결합소자는 입력부로 전류가 유입되면 발광소자(13)가 발광을 하게 되고, 그 발산되는 빛은 형성된 광 전달 통로를 통해 수광소자(14)로 전달되며, 수광소자(14)는 그 전달되는 빛을 전류로 변환을 하게 된다.In the transmission type optical coupling device using the silicon resin manufactured as described above, the light emitting device 13 emits light when a current flows into the input unit, and the emitted light is transmitted to the light receiving device 14 through the formed light transmission path. The element 14 converts the transmitted light into a current.
그러나 이러한 종래 실리콘 레진을 이용한 투과형 광결합소자는, 발광소자(13)와 수광소자(14)가 상호 대향되게 배치되어 있으므로 거리에 제한을 받는 단점이 있었다. 즉, 상호 거리를 가깝게 하면 광 전달효율은 좋아지지만 광투광성 절연체(17)와 에폭시 수지(20)와의 접착력이 결여되어 있고, 발광소자(13)와 수광소자(14)의 짧은 절연거리로 인하여 그의 계면(17, 20)으로 전기적 누설이 쉽게 발생되어 절연저하의 문제점이 있으며, 이와는 달리 그의 절연 거리를 확보하기 위해 거리를 증가시키면 넓은 거리로 인하여 광전달 효율이 저하되며, 계면(17)(20)의 접착력 결여로 인하여 절연 향상이 없다는 문제점이 발생된다. 따라서 이러한 구조의 투과형 광결합소자는 큰 절연 내압용으로는 적용이 불가능하며, 그 절연체 내부의 금속세금선(15)(16) 또는 낮게 해야 한다는 등의 문제점이 있다.However, since the light emitting device 13 and the light receiving device 14 are disposed to face each other, the transmission type optical coupling device using the conventional silicon resin has a disadvantage of being limited in distance. That is, when the mutual distance is closer, the light transmission efficiency is improved, but the adhesive force between the light transmissive insulator 17 and the epoxy resin 20 is lacking, and due to the short insulating distance between the light emitting element 13 and the light receiving element 14, Electrical leakage easily occurs at the interfaces 17 and 20, resulting in a problem of lowering the insulation. In contrast, if the distance is increased to secure the insulation distance, the light transmission efficiency is lowered due to the wide distance, and the interfaces 17 and 20 are reduced. There is a problem that there is no insulation improvement due to the lack of adhesion. Therefore, the transmissive optical coupling device having such a structure is not applicable to a large insulation breakdown voltage, and there is a problem that the metal tax wires 15 and 16 inside the insulator should be lowered.
그리고 각각의 리드프레임(11)(12)에 대하여 기계적으로 용접을 해야 한다는 복잡성이 있으며, 리드프레임(11)(12) 자체의 편차로 인하여 최적의 칩 마운트를 해도 대향배치가 틀어지게 되어 광전달 효율을 저하시키는 문제점이 있었다.In addition, there is a complexity that the welding of each lead frame (11, 12) must be mechanically performed, and due to the deviation of the lead frame (11) (12) itself, the opposing arrangement is distorted even if the chip is optimally mounted. There was a problem of lowering the efficiency.
또한, 발광소자(13)가 발광할 경우(체면발광), 광투과성 절연체(17) 외부가 흑색 에폭시 수지(20)로 되어 있어 광의 일부가 수광소자(14)에 도달하기 전에 흡수되어 광출력 효율을 저하시키는 등의 문제점도 있었다.In addition, when the light emitting element 13 emits light (body surface light emission), the outside of the light transmissive insulator 17 is made of a black epoxy resin 20 so that a part of the light is absorbed before reaching the light receiving element 14 and thus the light output efficiency is increased. There was also a problem such as lowering.
종래 광결합소자의 또 다른 구조로서, 첨부한 도면 도3은 광투과성 절연체를 이용한 반사형 광결합소자의 구조를 나타낸 것이다.As another structure of the conventional optical coupling device, the accompanying drawings Figure 3 shows the structure of the reflective optical coupling device using a light-transmitting insulator.
상기와 같은 광투과성 절연체를 이용한 반사형 광결합소자는, 전도성이 우수하며 V홈(71)(72)를 갖는 리드프레임(21)(22)의 동일 평면상에 발광소자(23)와 수광소자(24)를 각각 고전도성 접착제로 접착한 후 금속세금선(25)(26)으로 칩의 전극과 지정된 리드프레임부에 용융 접착시키고, 광투과성의 실리콘 수지(27)로 광의 전달 통로를 형성하며, 외벽에 반사성 절연체(28)(29)를 도포한 후 흑색 에폭시 수지(30)로 트랜스퍼 몰딩을 하여 제조한다. 또 다른 제조방법으로는 실리콘 수지(27)로 광의 전달 통로를 형성하는 공정까지는 동일하며, 그후에 반사성 절연체(28)(29)를 사용하지 않고 백색 필러(FILLER)를 함유한 에폭시 수지(30)만으로 몰딩을 하여 제조를 하게 된다.The reflective optical coupling device using the light-transmitting insulator as described above is excellent in conductivity and has the light emitting element 23 and the light receiving element on the same plane of the lead frames 21 and 22 having the V grooves 71 and 72. (24) are each adhered with a highly conductive adhesive, and then melt bonded to the electrodes of the chip and the designated lead frame with metal tax wires (25) and (26) to form light transmission paths with the light-transmitting silicone resin (27). After the reflective insulators 28 and 29 are applied to the outer wall, they are manufactured by transfer molding with a black epoxy resin 30. In another manufacturing method, the process of forming the light transmission path with the silicone resin 27 is the same, and then only the epoxy resin 30 containing the white filler is used without using the reflective insulators 28 and 29. Molding is made.
그러나 이러한 공정에 의해 제조되는 광투과성 절연체를 이용한 반사형 광결합 소자도 발광소자(23)와 수광소자(24)와의 간격 제한으로 투과성 실리콘 수지(27)의 도포에 한계가 있어 절연 내압을 증가시킬 수 없다는 문제점을 발생하였다.However, the reflective optical coupling device using the light-transmitting insulator manufactured by this process also has a limitation in the application of the transparent silicone resin 27 due to the limitation of the distance between the light emitting device 23 and the light receiving device 24, thereby increasing the insulation breakdown voltage. There was a problem that can not be.
아울러 반사성 절연체(28)(29)로 반사막을 도포한 후 경화 시키면 접착력이 떨어져 에폭시 몰딩(30)후 계면이 발생하며, 고절연 내압을 극복할 수 없다는 문제점도 있었다.In addition, when the reflective film is coated with the reflective insulators 28 and 29 and then cured, the adhesive force is reduced, and thus an interface occurs after the epoxy molding 30, and there is a problem that high insulation breakdown voltage cannot be overcome.
그리고 광투과성 실리콘 수지(27)로 광 통로를 형성할 때 그 형상이 원형이나 타원형인데, 그 형상이 하면까지 이루고 있어 발광소자(23)의 발광후 하면으로 반사된 빛은 수광소자(24)측으로 도달할 수 없으므로 광 출력특성을 저하시키는 문제점을 발생하였다.When the light path is formed of the light transmissive silicone resin 27, the shape is circular or elliptical, and the shape is formed up to the bottom surface, and the light reflected from the bottom surface after the light emission of the light emitting element 23 is directed to the light receiving element 24 side. Since it cannot reach | attain, the problem which degrades an optical output characteristic has arisen.
이에 본 발명은 상기와 같은 종래 광결합소자들의 제반 문제점을 해결하기 위해서 제안된 것으로, 본 발명의 목적은 종래 투과형과 반사형 광결합소자의 낮은 절연 특성과 광전류 전달비를 개선하고 제조의 복잡화를 해결하여 작은 패키지(PACKAGE ; 4PIN류, ARRAY 포함)에도 적용이 가능토록 함과 동시에 제조가 간단하고 사용이 용이하며 높은 신뢰성을 보장해주는 광결합소자를 제공하는데 있다.Therefore, the present invention has been proposed to solve all the problems of the conventional optical coupling devices as described above, and an object of the present invention is to improve the low insulation characteristics and the photocurrent transmission ratio of the conventional transmission and reflection optical coupling devices, and to improve the complexity of manufacturing. The solution is to be applied to small packages (including 4PINs and ARRAYs) and to provide an optical coupling device that is simple to manufacture, easy to use, and high in reliability.
이러한 본 발명의 목적을 달성하기 위한 방법은, 전도성이 우수한 리드프레임의 동일 평면상이 발광소자와 수광소자를 각각 고전도성 접착제로 접착시키는 제1공정과; 상기 제1공정후 금속세금선으로 상기 발광소자 및 수광소자의 전극과 지정된 리드 프레임부를 용융접착시키는 제2공정과; 상기 발광소자와 수광소자가 접착되는 하부 리드프레임 및 그 리드프레임 사이에 성형된 절연성 물체를 삽입하는 제3공정과; 상기 발광소자와 수광소자를 포함하는 주변부의 상면만을 광투과성 실리콘 수지로 도포하여 광 전달 통로를 형성하는 제4공정과; 상기 광투과성 실리콘 수지의 외벽 상면을 고접착 반사성 절연체로 도포한 후 그 위를 흑색 에폭시 수지로 트랜스퍼 몰딩하는 제5공정으로 이루어진다.The method for achieving the object of the present invention comprises a first step of bonding the light emitting element and the light receiving element on the same plane of the lead frame having excellent conductivity, respectively, with a highly conductive adhesive; A second step of melting and bonding the electrodes of the light emitting element and the light receiving element and the designated lead frame part with the metal tax wire after the first step; A third step of inserting a lower lead frame to which the light emitting element and the light receiving element are attached and a molded insulating object between the lead frame; A fourth step of forming a light transmission passage by applying only the upper surface of the peripheral part including the light emitting element and the light receiving element with a light transmissive silicone resin; A fifth process is performed by coating the upper surface of the outer wall of the transparent silicone resin with a high-adhesive reflective insulator and then transferring the molded upper portion with a black epoxy resin.
이하, 본 발명의 바람직한 실시예를 첨부한 도면에 의거 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
도 1은 종래 광투과성 절연체를 이용한 투과형 광결합소자의 구조도,1 is a structural diagram of a transmissive optical coupling device using a conventional light transmissive insulator,
도 2는 종래 광투과성 절연체를 이용한 반사형 광결합소자의 구조도,2 is a structural diagram of a reflective optical coupling device using a conventional light transmissive insulator,
도 3의 (가) 및 (나)도는 본 발명에 의한 반투과성 에폭시 수지의 절연체(FLAT형)를 이용한 반사형 광결합소자의 제1구조도(DIP형),3 (a) and (b) is a first structural diagram (DIP type) of a reflective optical coupling device using an insulator (FLAT type) of the semi-transparent epoxy resin according to the present invention,
도 4는 본 발명에 의한 반투과성 에폭시 수지의 절연체(CUP형)를 이용한 반사형 광결합소자의 제2구조도(DIP형),4 is a second structural diagram (DIP type) of a reflective optical coupling device using an insulator (CUP type) of a semi-transparent epoxy resin according to the present invention;
도 5의 (가) 및 (나)도는 본 발명에 의한 반투과성 에폭시 수지의 절연체(FLAT형)를 이용한 반사형 광결합소자의 제3구조도(MFP형-GULL-WING형),5 (a) and (b) is a third structural diagram (MFP type-GULL-WING type) of the reflective optical coupling device using an insulator (FLAT type) of the semi-transparent epoxy resin according to the present invention,
도 6은 본 발명에 의한 반투과성 에폭시 수지의 절연체(CUP형)를 이용한 반사형 광결합소자의 제4구조도(MFP형-GULL-WING형).6 is a fourth structural diagram of a reflection type optical coupling device using an insulator (CUP type) of a semi-transparent epoxy resin according to the present invention (MFP type-GULL-WING type).
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
31,32,41,42,51,52,6,62:리드프레임33,43,53,63:발광소자31, 32, 41, 42, 51, 52, 6, 62: Lead frame 33, 43, 53, 63: Light emitting element
34,44,54,64:수광소자35,36,45,46,55,56,65,66:금속세금선34, 44, 54, 64: Light receiving element 35, 36, 45, 46, 55, 56, 65, 66: Metal tax wire
37,47,57,67:실리콘 수지38,48,58,68:반사성 절연체37, 47, 57, 67: Silicone resin 38, 48, 58, 68: Reflective insulator
39,49,59,69:반투과성 절연체40,50,60,70:흑색 에폭시 수지39,49,59,69: Semi-transparent insulator 40, 50, 60, 70: Black epoxy resin
도3의 (가) 및 (나)도는 본 발명에 의한 반투과성 에폭시 수지의 FLAT형 절연체(혹은 T 형)를 이용한 반사형 광결합소자의 구조도(DIP형)이고, 도5의 (가) 및 (나)도는 본 발명에 의한 반투과성 에폭시 수지의 FLAT형 절연체(혹은 T형)를 이용한 반사형 광결합소자의 다른 구조도(MFP형-GULL-WING형)이다.3 (a) and (b) are structural diagrams of a reflective optical coupling device (DIP type) using the FLAT type insulator (or T type) of the semi-permeable epoxy resin according to the present invention. (B) is another structural diagram (MFP type-GULL-WING type) of the reflective type optical coupling element using the FLAT type insulator (or T type) of the semi-permeable epoxy resin of this invention.
여기서 DIP형 반사형 광결합소자의 제조 공정과 GULL-WING형의 MFP소형 제조 공정은 동일하므로, 중복기재를 피하기 위해 작용을 함게 설명한다.Here, the manufacturing process of the DIP-type reflective optical coupling element and the manufacturing process of the MFP-small MFP of the GULL-WING type are the same, and thus will be described to work in order to avoid overlapping materials.
먼저, 전도성이 우수하고 V홈(71)(72)이 있는 리드프레임(31)(32)(51)(52)의 동일 평면상에 발광소자(33)(53)와 수광소자(34)(54)를 각각 고전도성 접착제로 접착한 후, 금속세금선(35)(36)(55)(56)으로 그 발광소자(33)(53) 및 수광소자(34)(54)의 전극과 지정된 리드 프레임부를 용융하여 접착시키게 된다.First, the light emitting elements 33 and 53 and the light receiving element 34 are arranged on the same plane of the lead frames 31, 32, 51 and 52 having excellent conductivity and having V grooves 71 and 72. 54 are bonded to each other with a highly conductive adhesive, and then the metal tax wires 35, 36, 55, 56 are designated with the electrodes of the light emitting elements 33, 53 and the light receiving elements 34, 54, respectively. The lead frame portion is melted and bonded.
이후, 발광소자(33)(53)와 수광소자(34)(54)의 리드프레임(31)(32)(51)(52) 사이에 절연성을 향상 시키고 실리콘 수지의 흐름을 결정하기 위해서, T자형으로 성형된 절연성 반투명 에폭시 수지 또는 관련된 절연성 물체(39)(59)를 상기 리드프레임(31)(32)(51)(52)의 상면보다 높거나 같은 위치가 되도록 삽입하고, 리드프레임에 열을 인가한 상태에서 광투과성 실리콘 수지(37)(57)를 도포하여 상기 발광소자(33)(53) 및 수광소자(34)(54)를 포함하는 주변부의 상면만을 돔(DOME) 형상(보트형)의 광 전달 통로를 형성하게 된다.Then, in order to improve insulation and determine the flow of the silicone resin between the lead frames 31, 32, 51 and 52 of the light emitting elements 33 and 53 and the light receiving elements 34 and 54, T Insert an insulating translucent epoxy resin or related insulating object 39, 59 formed in a shape so as to be higher than or equal to the upper surface of the lead frames 31, 32, 51 and 52, and heat the lead frame. The light-transmitting silicone resins 37 and 57 are applied in the state of applying the light, and only the upper surface of the peripheral part including the light emitting devices 33 and 53 and the light receiving devices 34 and 54 is dome-shaped (boat). Form a light transmission path.
상기와 같은 공정으로 돔 형상을 만든 후, 반사막과 에폭시 수지와의 계면 밀착력 향상과 광 반사력을 증가시키기 위해 반사성 절연체가 완전 경화한후에도 끈적 끈적한 고접착력과 광 반사력을 갖는 반사성 필러가 함유된 경화성 수지(38)(58)로 외벽 상면을 도포한 후, 흑색 에폭시 수지(40)(60)로 트랜스퍼 몰딩을 하여 광결합소자를 제조하게 되는 것이다.After the dome shape is formed by the above process, the reflective filler having high stickiness and light reflectivity, which is sticky, is contained even after the reflective insulator is completely cured to improve the interfacial adhesion between the reflective film and the epoxy resin and to increase the light reflectivity. After coating the upper surface of the outer wall with the curable resins (38) and (58), transfer molding is carried out with the black epoxy resins (40) and (60) to manufacture the optical coupling device.
이렇게 제조되는 본 발명에 의한 광결합소자의 특징은 발광소자와 수광소자 양단간의 절연성을 향상시키고, 광투과성 실리콘 수지(37)(57)의 흐름을 결정하기 위해서, 돌기 모양으로 성형된 절연성 반투명 에폭시 수지 또는 절연성 물질(39)(59)을 발광소자(33)(53)와 수광소자(34)(54)의 리드프레임(31)(32)(51)(52)사이에 자동 삽입기로 삽입하였다.The optical coupling device according to the present invention manufactured as described above has an insulating semi-transparent epoxy molded into a protrusion to improve the insulation between the light emitting device and the light receiving device, and to determine the flow of the light transmissive silicone resins 37 and 57. A resin or insulating material (39) (59) was inserted into an automatic inserter between the light emitting elements (33) 53 and the lead frames (31) (32) (51) (52) of the light receiving elements (34) (54). .
또한, 광투과성의 실리콘 수지(37)(57)로 돔 형의 광전달 통로(상면)를 만들어 주기 위해서, 리드프레임 고정부에 온도 조절기능을 갖는 장비를 설치하여 열적으로 광투과성 수지(37)(57)의 흐름과 형상을 결정시킨다.In addition, in order to make a dome-type light transmission passage (upper surface) with the light-transmissive silicone resins 37 and 57, a device having a temperature control function is provided in the lead frame fixing portion to thermally transmit the light-transmissive resin 37 Determine the flow and shape of (57).
아울러 절연거리가 짧은 리드프레임의 측계면에서 반사성 물체(38)(58)와 흑색 에폭시 수지(40)(60)의 밀착력 저하로 인해 발생되는 계면의 밀착력을 높이고, 전기적인 광효율 저하 방지를 높이기 위해서 반사성 절연체가 완전 경화한 후에도 끈적끈적한 고접착력과 광반사력을 갖는 반사성 필러가 함유된 경화성 수지(38)(58)를 사용하여, 트랜스퍼 몰딩된 흑색 에폭시 수지(40)(60)와의 내부 계면을 제로(0)화하고, 실리콘 수지의 흐름을 V홈(71)(72)(73)(74)과 내부 절연체(39)(59)로 억제함으로써 상면으로만 광이 충분히 전달되도록 하였다.In addition, in order to increase the adhesion of the interface caused by the decrease in adhesion between the reflective objects 38 and 58 and the black epoxy resin 40 and 60 in the measurement surface of the lead frame having a short insulating distance, and to prevent the reduction of electrical light efficiency. After the curing of the reflective insulator, the internal interface with the transfer-molded black epoxy resin (40) (60) was formed using a curable resin (38) (58) containing a reflective filler having high stickiness and light reflectivity. By zeroing, the flow of the silicone resin was suppressed by the V grooves 71, 72, 73, 74 and the internal insulators 39, 59 so that the light was sufficiently transmitted to the upper surface only.
또한 실리콘 수지의 흐름 억제 수단으로 리드프레임(31)(32)(51)(52)의 V홈(71~74)을 ∧형상의 돌기(71' ~ 74')로 형성할 수도 있음을 특징으로 한다.In addition, the V grooves 71 to 74 of the lead frames 31, 32, 51, and 52 may be formed by the curved projections 71 'to 74' as the flow suppressing means of the silicone resin. do.
특히, 본 발명은 기존의 원이나 타원형의 돔 형태를 탈피하여 보트형의 광반사 영역만을 돔으로 형성(37,57 - 상면)하고, 하면은 고절연성의 반투명성 절연체(39,59)만을 적용시켜 절연내압을 상승 시킴과 동시에 별도로 반사막을 형성시킬 필요가 없으므로 제조 공정이 단순화 하게 된다.In particular, the present invention removes the existing circular or elliptical dome shape to form only the boat-shaped light reflection area as a dome (upper surface 37, 57 -top), and the lower surface applies only a highly insulating semi-transparent insulator (39,59). By increasing the insulation breakdown voltage, it is not necessary to form a reflective film, thereby simplifying the manufacturing process.
첨부한 도면 도4는 본 발명에 의한 반투과성 에폭시 수지의 CUP형 절연체를 이용한 반사형 광결합소자의 구조도(DIP형)이고, 도6은 본 발명에 의한 반투과성 에폭시 수지의 CUP형 절연체를 이용한 반사형 광결합소자의 다른 구조도(MFP형-GULL-WING형)이다.4 is a structural diagram of a reflective optical coupling device using a CUP type insulator of a semi-transparent epoxy resin according to the present invention (DIP type), and FIG. 6 is a reflection using a CUP type insulator of a semi-transparent epoxy resin according to the present invention. Another structural diagram of the optical coupling element (MFP type-GULL-WING type) is shown.
이에 도시된 바와같이, 반투과성 에폭시 수지의 CUP형 절연체(49)가 설치되고 전도성이 우수한 리드프레임(41)(42)(61)(62)의 동일 평면상에 발광소자(43)(63)와 수광소자(44)(64)를 각각 고전도성 접착제로 접착한 후, 금속세금선(45)(46)(65)(66)으로 그 발광소자(43)(63) 및 수광소자(44)(64)의 전극과 지정된 리드 프레임부를 용융하여 접착시킨다.As shown therein, the CUP type insulator 49 of the semi-permeable epoxy resin is installed and the light emitting elements 43, 63 and the same plane of the lead frames 41, 42, 61, 62 are excellent in conductivity. After attaching the light receiving elements 44 and 64 to each other with a highly conductive adhesive, the light emitting elements 43, 63 and the light receiving element 44 are formed of metal tax wires 45, 46, 65 and 66. The electrode of 64 and the designated lead frame portion are melted and bonded.
다음으로, 리드프레임에 열을 인가한 상태에서 광투과성 실리콘 수지(47)(67)로임의 형상의 광 전달 통로를 형성하게 되는데, 이때 광 전달 통로의 형상은 상기 CUP형의 절연성 물체(49)(69)의 양단과 내벽이 접하고 동일한 높이가 되도록 플래트(FLAT)형의 형상이 된다.Next, in the state in which heat is applied to the lead frame, the light transmitting passages having the shape of the light-transmitting silicone resins 47 and 67 are formed, wherein the shape of the light transmitting passages is the CUP-type insulating object 49. Both ends and the inner wall of (69) are in contact with each other to have a flat shape.
그리고, 고집착력과 광반사력을 갖는 반사성 필러를 함유한 경화성 수지(48)(68)로 실리콘 수지(47)(67)의 상면을 소정 두께로 도포한 후, 흑색 에폭시 수지(50)(70)로 트랜스퍼 몰딩을 하여 광결합소자를 제조하게 되는 것이다.Then, after applying the upper surface of the silicone resins (47) (67) to a predetermined thickness with a curable resin (48) (68) containing a reflective filler having high adhesion and light reflecting force, black epoxy resin (50) (70) It is to manufacture an optical coupling device by transferring the molding with).
이상에서 상술한 바와같이 본 발명은 리드프레임의 하면과 그 리드프레임 사이에 돌기가 있는 반투명 에폭시 수지의 성형 절연체를 삽입함으로써 절연 특성을 개선하였으며, 온도 조절 기능을 갖는 장비를 설치함으로써 빠른 시간내에(1분이내) 1차 실리콘 수지의 경화가 이루어지므로 제조의 자동화가 가능하고, 1차 경화된 광투과성 실리콘 수지에 반사성 수지를 주입할 때 수지의 유동성이 좋아 상면 첨두부에만 주입하면 1분 후에는 전체적으로 상면부에 도포되고, 리드프레임(31)(32)(51)(52)의 V홈전까지 억제되어 제조력과 신뢰도 향상을 도모하는 효과가 있다.As described above, the present invention improves the insulation characteristics by inserting a molded insulator of translucent epoxy resin with protrusions between the lower surface of the lead frame and the lead frame, and installs equipment having a temperature control function in a short time ( Within 1 minute) Since the primary silicone resin is cured, it is possible to automate the manufacturing process. When injecting the reflective resin into the first cured light-transmissive silicone resin, the resin has good fluidity. It is applied to the upper surface portion and suppressed until the V grooves of the lead frames 31, 32, 51 and 52 have the effect of improving manufacturing power and reliability.
또한, 본 발명에 의한 보트형 또는 플래트형의 반사막이 리드프레임을 충분히 감싸고 있어 내외부 절연성을 향상시킬 수 있는 효과도 있다.In addition, since the boat-type or flat-type reflective film according to the present invention completely surrounds the lead frame, there is an effect of improving internal and external insulation.
본 발명은 종래 투과형 광결합소자의 낮은 절연 특성을 개선하고 제조의 복잡화를 해결하여 작은 패키지(PACKAGE ; 4PIN류, ARRAY포함)에도 적용이 가능토록 함과 동시에 제조가 간단하고 사용이 용이하며 높은 신뢰성을 보장해주는 광결합소자를 제공하고자 한 것이다.The present invention can be applied to a small package (package; 4pins, including ARRAY) by improving the low insulation characteristics of the conventional transmissive optical coupling device and solving the manufacturing complexity, and at the same time, the manufacturing is simple, easy to use and high reliability. It is to provide an optical coupling device that ensures the.
Claims (13)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970016921A KR100271423B1 (en) | 1997-05-01 | 1997-05-01 | Light couple device and method manufacture of the same |
| JP13590498A JPH118404A (en) | 1997-05-01 | 1998-05-01 | Optically coupling element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970016921A KR100271423B1 (en) | 1997-05-01 | 1997-05-01 | Light couple device and method manufacture of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980082183A true KR19980082183A (en) | 1998-12-05 |
| KR100271423B1 KR100271423B1 (en) | 2000-11-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970016921A KR100271423B1 (en) | 1997-05-01 | 1997-05-01 | Light couple device and method manufacture of the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH118404A (en) |
| KR (1) | KR100271423B1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282935A (en) | 2002-03-26 | 2003-10-03 | Sharp Corp | Optically coupled device and method of manufacturing the same, and electronic apparatus |
| KR101121728B1 (en) | 2008-06-26 | 2012-03-23 | 서울반도체 주식회사 | Led package with heat radiating structure |
| TWI684268B (en) * | 2017-04-20 | 2020-02-01 | 億光電子工業股份有限公司 | Sensor module and method of manufacturing the same |
-
1997
- 1997-05-01 KR KR1019970016921A patent/KR100271423B1/en not_active IP Right Cessation
-
1998
- 1998-05-01 JP JP13590498A patent/JPH118404A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH118404A (en) | 1999-01-12 |
| KR100271423B1 (en) | 2000-11-15 |
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