JP2006269783A - Optical semiconductor package - Google Patents

Optical semiconductor package Download PDF

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Publication number
JP2006269783A
JP2006269783A JP2005086260A JP2005086260A JP2006269783A JP 2006269783 A JP2006269783 A JP 2006269783A JP 2005086260 A JP2005086260 A JP 2005086260A JP 2005086260 A JP2005086260 A JP 2005086260A JP 2006269783 A JP2006269783 A JP 2006269783A
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semiconductor package
optical
optical element
optical semiconductor
light
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Kenji Takaya
健次 貴家
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Semiconductor Lasers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor package where a light transmittance in a light receiving area and a light emitting area of an optical element in a seal for sealing the optical element and a passive element, is improved, and where airtightness with a circuit board for mounting the optical element and the passive element is also improved. <P>SOLUTION: The optical semiconductor package 11 is provided with the circuit board 12, the optical element 13 and the passive element 14 to be mounted on the circuit board 12, and the seal 15 for sealing the optical element 13 and the passive element 14. A part equivalent to a light receiving area or a light emitting area of the optical element 13 of the seal 15 is formed of a glass body 21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、光素子と受動素子とが混載された光半導体パッケージに関するものである。   The present invention relates to an optical semiconductor package in which an optical element and a passive element are mixedly mounted.

従来の光伝送デバイスやＯＥＩＣ（光電子集積回路）等における光半導体パッケージ１は、図３に示すように、発光ダイオードやレーザダイオード等の光素子２を中心に、コンデンサや抵抗等の受動素子３から構成されており、回路基板４上に前記光素子２や受動素子３が実装され、その上方を透明樹脂材による封止体５で封止された構造となっている。   As shown in FIG. 3, an optical semiconductor package 1 in a conventional optical transmission device, OEIC (optoelectronic integrated circuit) or the like is composed of an optical element 2 such as a light emitting diode or a laser diode, and a passive element 3 such as a capacitor or a resistor. The optical element 2 and the passive element 3 are mounted on the circuit board 4, and the upper part is sealed with a sealing body 5 made of a transparent resin material.

前記光半導体パッケージ１は、様々な光通信装置や光ピックアップ装置に搭載されているが、通信技術の高速化やＤＶＤ等の高密度記録媒体のピックアップ用途への需要の増大に伴って、より波長の短い光が使用されるようになってきている。しかしながら、このような波長の短い光は、樹脂材を透過しにくいといった特性があり、受光効率や発光効率が低下するといった問題があった。これを改善するため、特許文献１に示されるように、光素子単体構成のデバイスにおいては、光素子全体を透明なガラス材で封止している例がある。
特開２００３−１８８４５０号公報 The optical semiconductor package 1 is mounted on various optical communication devices and optical pickup devices. However, as the demand for high-speed recording technology and high-density recording media such as DVD increases, the wavelength of the optical semiconductor package 1 increases. The short light is becoming used. However, such light with a short wavelength has a characteristic that it is difficult to transmit through the resin material, and there is a problem that the light receiving efficiency and the light emitting efficiency are lowered. In order to improve this, as shown in Patent Document 1, in a device having a single optical element configuration, there is an example in which the entire optical element is sealed with a transparent glass material.
JP 2003-188450 A

上記ガラス材を封止体とする従来の光半導体パッケージは、受光あるいは発光の単体の機能を備えて構成されたものが多く、小型であるため、封止領域が少なくてすむ。しかしながら、複数の光素子や受動素子からなる光半導体パッケージでは、封止領域が大きくなり、封止体をガラス材で構成するには、製造コストが多くかかるといった問題があり、実用化されていない。   Many of the conventional optical semiconductor packages using the glass material as a sealing body are configured to have a single function of light reception or light emission, and are small in size, so that a sealing region is small. However, in an optical semiconductor package composed of a plurality of optical elements and passive elements, there is a problem that a sealing region becomes large, and it takes a lot of manufacturing cost to construct a sealing body with a glass material. .

また、前記ガラス材による封止体では、光素子や受動素子を気密封止しずらく、回路基板との接合性もよくないといった問題点がある。   Moreover, the sealing body made of the glass material has a problem that it is difficult to hermetically seal the optical element and the passive element, and the bonding property to the circuit board is not good.

そこで、本発明の目的は、光素子や受動素子を封止する封止体のうち、前記光素子の受光領域や発光領域における光透過率の向上を図ると共に、前記光素子や受動素子を実装する回路基板との気密性を高めることのできる光半導体パッケージを提供することである。   Therefore, an object of the present invention is to improve the light transmittance in the light receiving region and the light emitting region of the optical element among the sealing body for sealing the optical element and the passive element, and to mount the optical element and the passive element. It is an object of the present invention to provide an optical semiconductor package capable of improving airtightness with a circuit board.

上記課題を解決するために、本発明の光半導体パッケージは、回路基板と、この回路基板上に実装される光素子及び受動素子と、この光素子及び受動素子を封止する封止体とを備えた光半導体パッケージにおいて、前記封止体は、前記光素子を覆う部分がガラス体で形成されていることを特徴とする。   In order to solve the above problems, an optical semiconductor package of the present invention includes a circuit board, an optical element and a passive element mounted on the circuit board, and a sealing body that seals the optical element and the passive element. In the provided optical semiconductor package, the sealing body is characterized in that a portion covering the optical element is formed of a glass body.

また、前記光素子は、受光領域または発光領域を有し、少なくとも前記受光領域または発光領域がガラス体で封止されている。   The optical element has a light receiving region or a light emitting region, and at least the light receiving region or the light emitting region is sealed with a glass body.

本発明に係る光半導体パッケージによれば、光素子の受光領域や発光領域に対応する封止体の一部をガラス体によって形成したことで、高速通信やＤＶＤなどのような高密度光記憶媒体のピックアップとして必要な波長の短い光を高い透過率で受光または発光させることが可能となる。また、ガラス体を用いているため、樹脂材のように高温条件下における変形や変色等の劣化が発生しずらく、長期に亘って安定した光透過率を維持することができる。   According to the optical semiconductor package of the present invention, a part of the sealing body corresponding to the light receiving region and the light emitting region of the optical element is formed of a glass body, so that a high-density optical storage medium such as high-speed communication or a DVD is obtained. It is possible to receive or emit light having a short wavelength required for the pickup with high transmittance. In addition, since a glass body is used, deterioration such as deformation and discoloration under a high temperature condition is unlikely to occur like a resin material, and a stable light transmittance can be maintained over a long period of time.

また、前記光素子のような高い透過率を要する箇所以外の受動素子などの実装領域においては、樹脂材を用いて形成されているので、製造コストが抑えられると共に、回路基板との密着性が高まり、気密封止が容易である。   In addition, in the mounting region such as the passive element other than the portion requiring high transmittance such as the optical element, since it is formed using a resin material, the manufacturing cost can be suppressed and the adhesion with the circuit board can be reduced. Elevated and easy to hermetically seal.

以下、添付図面に基づいて本発明に係る光半導体パッケージの実施形態を詳細に説明する。ここで、図１は本発明の光半導体パッケージの斜視図、図２は前記光半導体パッケージのＡ−Ａ断面図である。   Embodiments of an optical semiconductor package according to the present invention will be described below in detail with reference to the accompanying drawings. Here, FIG. 1 is a perspective view of the optical semiconductor package of the present invention, and FIG. 2 is a cross-sectional view taken along the line AA of the optical semiconductor package.

図１及び図２に示すように、本発明の光半導体パッケージ１１は、回路基板１２と、この回路基板１２上に実装される光素子１３及び受動素子１４と、これら光素子１３及び受動素子１４を前記回路基板１２上に気密封止する封止体１５とを備えて構成されている。   As shown in FIGS. 1 and 2, an optical semiconductor package 11 of the present invention includes a circuit board 12, an optical element 13 and a passive element 14 mounted on the circuit board 12, and the optical element 13 and the passive element 14. And a sealing body 15 that hermetically seals the circuit board 12 on the circuit board 12.

前記回路基板１２は、ガラスエポキシ樹脂やＢＴレジン（Bismaleimide Triazine Resin）等の絶縁材料で形成されている。この回路基板１２は、表面（実装面１７）に光素子１３や受動素子１４が実装され、側面にスルーホール状の外部接続電極１８が設けられている。前記実装面１７には、前記光素子１３が実装されるダイパッド部１９や、光素子１３と複数の受動素子１４の相互間または外部接続電極１８に導通する電極パターンが形成されている。   The circuit board 12 is made of an insulating material such as glass epoxy resin or BT resin (Bismaleimide Triazine Resin). The circuit board 12 has an optical element 13 and a passive element 14 mounted on the surface (mounting surface 17), and a through-hole-shaped external connection electrode 18 is provided on the side surface. On the mounting surface 17, there are formed a die pad portion 19 on which the optical element 13 is mounted, and an electrode pattern that conducts between the optical element 13 and the plurality of passive elements 14 or to the external connection electrode 18.

前記光素子１３は、用途に応じて受光素子または発光素子のいずれかによって構成される。例えば、受光素子にはフォトダイオード、フォトトランジスタ等が用いられ、発光素子には発光ダイオード、レーザダイオード等が用いられる。本実施形態では、前記光素子１３が受光素子で構成された光半導体パッケージを例にして説明する。   The optical element 13 is configured by either a light receiving element or a light emitting element depending on the application. For example, a photodiode, a phototransistor, or the like is used as the light receiving element, and a light emitting diode, a laser diode, or the like is used as the light emitting element. In the present embodiment, an optical semiconductor package in which the optical element 13 is a light receiving element will be described as an example.

前記受動素子１４は、前記光素子１３に供給される電流を制御したり、過電流が流れ込まないように保護したりするためのコンデンサや抵抗等で構成される。これら光素子１３、受動素子１４は、素子電極部が片面側に設けられ、ボンディングワイヤを使用しない表面実装型のものが用いられ、前記部品実装部１７内のダイパッド部に半田バンプ、Ａｕスタッドバンプ＋ＮＣＰ／Ａｕ−Ｓｎペーストあるいは導電性接着剤を介して実装される。   The passive element 14 is configured by a capacitor, a resistor, or the like for controlling the current supplied to the optical element 13 or protecting it from flowing an overcurrent. The optical element 13 and the passive element 14 are provided with a device electrode portion on one side and a surface mounting type that does not use a bonding wire, and solder bumps and Au stud bumps are formed on the die pad portion in the component mounting portion 17. It is mounted via + NCP / Au—Sn paste or conductive adhesive.

前記受動素子１４は、素子電極部（図示せず）を備えた面を下に向けて前記回路基板１２上に載置され、半田バンプを介して所定の電極パターン上にフリップチップ実装される。このフリップチップ実装は、前記電極パターン上に半田バンプが形成された素子電極部を位置決めして載置した後、ピーク温度が２５０度で約１０秒以下のリフロー処理工程を経ることによって行われる。また、前記光素子１３の上面側の素子電極部は、ボンディングワイヤによって前記電極パターンに接続される。ボンディングワイヤは、接合強度を高めると共に、前記封止体１５を形成する際の熱膨張による影響を最小限に抑えるために、３０μｍ程度のＡｕ線材を使用するのが望ましい。   The passive element 14 is placed on the circuit board 12 with a surface provided with an element electrode portion (not shown) facing down, and is flip-chip mounted on a predetermined electrode pattern via a solder bump. This flip-chip mounting is performed by positioning and placing the element electrode portion on which the solder bump is formed on the electrode pattern, and then performing a reflow process step at a peak temperature of 250 degrees and about 10 seconds or less. The element electrode portion on the upper surface side of the optical element 13 is connected to the electrode pattern by a bonding wire. In order to increase the bonding strength and minimize the influence of thermal expansion when the sealing body 15 is formed, it is desirable to use an Au wire of about 30 μm as the bonding wire.

前記封止体１５は、前記光素子１３の受光領域２０に相当する部分がガラス領域１５ａで、他の部分は樹脂領域１５ｂになっている。前記ガラス領域１５ａには、光透過率の高いガラス体２１が使用され、樹脂領域１５ｂには、エポキシ樹脂やポリカーボネート樹脂等の樹脂材２２が使用される。前記ガラス領域１５ａには、前記発光素子１３の受光領域２０と同じかそれ以上の広さを有して形成された立方形状のガラス体２１が光素子１３の上に直接載置される。前記樹脂領域１５ｂには、金型を使用して前記ガラス体２１の周囲に前記樹脂材２２が充填される。この樹脂材２２は、前記ガラス体２１の上面が露出するように充填され、上面が平坦面となるように仕上げられる。また、前記ガラス体２１の上面に反射防止用のコーティングを施すことで、前記受光領域２０に対する光透過率をさらに高めることができる。なお、前記樹脂領域１５ｂは、光を通す必要がないので、有色系の樹脂材を用いて、受光素子１４が実装されている部分を遮光させることもできる。この遮光は、黒色系の樹脂材を用いたり、遮光性を有する部材を樹脂材に混在させたりすることによって行われる。   In the sealing body 15, a portion corresponding to the light receiving region 20 of the optical element 13 is a glass region 15a, and the other portion is a resin region 15b. A glass body 21 having a high light transmittance is used for the glass region 15a, and a resin material 22 such as an epoxy resin or a polycarbonate resin is used for the resin region 15b. A cubic glass body 21 having a size equal to or larger than the light receiving area 20 of the light emitting element 13 is placed directly on the optical element 13 in the glass area 15a. The resin region 15b is filled with the resin material 22 around the glass body 21 using a mold. The resin material 22 is filled so that the upper surface of the glass body 21 is exposed, and is finished so that the upper surface becomes a flat surface. Moreover, the light transmittance with respect to the said light reception area | region 20 can further be improved by providing the coating for antireflection on the upper surface of the said glass body 21. FIG. Since the resin region 15b does not need to transmit light, a colored resin material can be used to shield the portion where the light receiving element 14 is mounted. This light shielding is performed by using a black resin material or mixing a light shielding member in the resin material.

上記光半導体パッケージ１１における受光作用を図２に示す。この光半導体パッケージ１１は、前記光素子１３にフォトダイオードやフォトトランジスタのような受光機能を備えており、発光機能を有した図示しない光半導体パッケージ等の光源に対向するように配置される。前記光源から出射される光は、受光領域に向けて発せられ、ガラス体２１内を高い光透過率を有した状態で受光素子に入光させることができる。このように、前記封止体１５の一部をガラス体２１で封止することで、前記受光領域にのみ集光させるような指向性を持たせることが可能となる。   The light receiving action in the optical semiconductor package 11 is shown in FIG. In this optical semiconductor package 11, the optical element 13 has a light receiving function such as a photodiode or a phototransistor, and is disposed so as to face a light source such as an optical semiconductor package (not shown) having a light emitting function. The light emitted from the light source is emitted toward the light receiving region, and can enter the light receiving element in the glass body 21 with high light transmittance. In this way, by sealing a part of the sealing body 15 with the glass body 21, it becomes possible to have directivity such that light is condensed only in the light receiving region.

また、上記実施形態では、ガラス体の形状を四角柱体としたが、前記受光領域または発光領域に合わせて円柱体とすることもできる。   Moreover, in the said embodiment, although the shape of the glass body was made into the square pillar body, it can also be set as a cylindrical body according to the said light reception area | region or light emission area | region.

上記光半導体パッケージ１１の封止体１５は、以下に示すような工程によって形成される。最初に、前記光素子１３及び受動素子１４が実装された回路基板１２に封止体１５を成形させるための樹脂充填用の金型を載置する。次に、前記光素子１３の受光領域２０に相当する箇所にガラス体２１を位置決めして載置する。その際、前記ガラス体２１がずれないように、紫外線硬化型の透明樹脂接着剤を介して光素子１３上に接合させておく。次に、前記金型内に樹脂材を前記ガラス体２１の上面が露出するように充填した後、硬化させる。また、必要に応じて、前記ガラス体２１の上面に反射を抑えるための部材をコーティングする。なお、前記光半導体パッケージ１１を一括して量産する場合は、複数の光半導体パッケージが形成可能な集合回路基板を用意し、光素子１３や受動素子１４の実装及び封止体１５の成形が完了した後、前記集合回路基板をダイシングすることによって行われる。   The sealing body 15 of the optical semiconductor package 11 is formed by the following process. First, a resin-filling mold for molding the sealing body 15 is placed on the circuit board 12 on which the optical element 13 and the passive element 14 are mounted. Next, the glass body 21 is positioned and placed at a position corresponding to the light receiving region 20 of the optical element 13. At this time, the glass body 21 is bonded to the optical element 13 through an ultraviolet curable transparent resin adhesive so that the glass body 21 does not shift. Next, the resin material is filled in the mold so that the upper surface of the glass body 21 is exposed, and then cured. Moreover, a member for suppressing reflection is coated on the upper surface of the glass body 21 as necessary. When mass production of the optical semiconductor package 11 is performed, a collective circuit board capable of forming a plurality of optical semiconductor packages is prepared, and the mounting of the optical element 13 and the passive element 14 and the molding of the sealing body 15 are completed. Thereafter, the collective circuit board is diced.

以上、説明したように、本発明の光半導体パッケージ１１にあっては、光素子１３が実装されている領域が光透過率の高いガラス体２１によって封止されているため、高速通信用途やＤＶＤなどのような高密度光記録媒体のピックアップ用途に対応した波長の短い光を減衰させることなく、高感度で受光または発光させることができる。また、前記光素子１３を除いた領域には、樹脂材を充填させて成形されているため、回路基板１２上を隙間なく、気密封止させることができる。   As described above, in the optical semiconductor package 11 of the present invention, the region where the optical element 13 is mounted is sealed with the glass body 21 having a high light transmittance. It is possible to receive or emit light with high sensitivity without attenuating light having a short wavelength corresponding to the pickup application of a high-density optical recording medium such as. Since the region excluding the optical element 13 is filled with a resin material and molded, the circuit board 12 can be hermetically sealed without a gap.

本発明に係る光半導体パッケージの斜視図である。1 is a perspective view of an optical semiconductor package according to the present invention. 上記光半導体パッケージのＡ−Ａ断面図である。It is AA sectional drawing of the said optical semiconductor package. 従来の光半導体パッケージの斜視図である。It is a perspective view of the conventional optical semiconductor package.

符号の説明Explanation of symbols

１１ 光半導体パッケージ
１２ 回路基板
１３ 光素子
１４ 受動素子
１５ 封止体
１５ａ ガラス領域
１５ｂ 樹脂領域
１７ 実装面
１８ 外部接続電極
１９ ダイパッド部
２０ 受光領域
２１ ガラス体
２２ 樹脂材
DESCRIPTION OF SYMBOLS 11 Optical semiconductor package 12 Circuit board 13 Optical element 14 Passive element 15 Sealing body 15a Glass area | region 15b Resin area | region 17 Mounting surface 18 External connection electrode 19 Die pad part 20 Light receiving area | region 21 Glass body 22 Resin material

Claims (6)

回路基板と、この回路基板上に実装される光素子及び受動素子と、この光素子及び受動素子を封止する封止体とを備えた光半導体パッケージにおいて、
前記封止体は、前記光素子を覆う部分がガラス体で形成されていることを特徴とする光半導体パッケージ。 In an optical semiconductor package comprising a circuit board, an optical element and a passive element mounted on the circuit board, and a sealing body for sealing the optical element and the passive element,
The sealed body is an optical semiconductor package, wherein a portion covering the optical element is formed of a glass body. 前記光素子は、受光領域または発光領域を有し、少なくとも前記受光領域または発光領域が前記ガラス体で封止されている請求項１記載の光半導体パッケージ。 The optical semiconductor package according to claim 1, wherein the optical element has a light receiving region or a light emitting region, and at least the light receiving region or the light emitting region is sealed with the glass body. 前記ガラス体は、前記光素子の上に紫外線硬化型の透明接着剤を介して接合される請求項１記載の光半導体パッケージ。 The optical semiconductor package according to claim 1, wherein the glass body is bonded onto the optical element via an ultraviolet curable transparent adhesive. 前記ガラス体の表面には、反射を抑えるための部材がコーティングされている請求項１記載の光半導体パッケージ。 The optical semiconductor package according to claim 1, wherein a surface of the glass body is coated with a member for suppressing reflection. 前記封止体は、前記ガラス体と樹脂材とで一体形成されている請求項１記載の光半導体パッケージ。 The optical semiconductor package according to claim 1, wherein the sealing body is integrally formed of the glass body and a resin material. 前記樹脂材が遮光部材で形成されている請求項５記載の光半導体パッケージ。 The optical semiconductor package according to claim 5, wherein the resin material is formed of a light shielding member.
JP2005086260A 2005-03-24 2005-03-24 Optical semiconductor package Pending JP2006269783A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088510A (en) * 2007-09-28 2009-04-23 Samsung Electro Mech Co Ltd Glass cap molding package, method for manufacturing thereof, and camera module
JP2013219397A (en) * 2013-07-24 2013-10-24 Nichia Chem Ind Ltd Light-emitting device
KR101510381B1 (en) 2008-08-13 2015-04-06 엘지이노텍 주식회사 Camera Module
KR20160115695A (en) * 2016-02-15 2016-10-06 (주)파트론 Photodetecting sensor package
JP2017046015A (en) * 2016-12-05 2017-03-02 ローム株式会社 LED module
JP2018113479A (en) * 2018-04-04 2018-07-19 ローム株式会社 Light-emitting element module
CN115603168A (en) * 2022-12-12 2023-01-13 度亘激光技术（苏州）有限公司（Cn） Semiconductor laser device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009088510A (en) * 2007-09-28 2009-04-23 Samsung Electro Mech Co Ltd Glass cap molding package, method for manufacturing thereof, and camera module
KR101510381B1 (en) 2008-08-13 2015-04-06 엘지이노텍 주식회사 Camera Module
JP2013219397A (en) * 2013-07-24 2013-10-24 Nichia Chem Ind Ltd Light-emitting device
KR20160115695A (en) * 2016-02-15 2016-10-06 (주)파트론 Photodetecting sensor package
KR101689590B1 (en) * 2016-02-15 2016-12-26 (주)파트론 Photodetecting sensor package
JP2017046015A (en) * 2016-12-05 2017-03-02 ローム株式会社 LED module
JP2018113479A (en) * 2018-04-04 2018-07-19 ローム株式会社 Light-emitting element module
CN115603168A (en) * 2022-12-12 2023-01-13 度亘激光技术（苏州）有限公司（Cn） Semiconductor laser device
CN115603168B (en) * 2022-12-12 2023-02-21 度亘激光技术（苏州）有限公司 Semiconductor laser device

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