JPS61214558A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61214558A
JPS61214558A JP60054628A JP5462885A JPS61214558A JP S61214558 A JPS61214558 A JP S61214558A JP 60054628 A JP60054628 A JP 60054628A JP 5462885 A JP5462885 A JP 5462885A JP S61214558 A JPS61214558 A JP S61214558A
Authority
JP
Japan
Prior art keywords
iil
diffusion layer
grounding
semiconductor device
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60054628A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562826B2 (enrdf_load_stackoverflow
Inventor
Sadao Ogura
小倉　節生
Shizuo Kondo
近藤　静雄
Yukinori Kitamura
幸則 北村
Tomoyuki Watabe
知行 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP60054628A priority Critical patent/JPS61214558A/ja
Publication of JPS61214558A publication Critical patent/JPS61214558A/ja
Publication of JPH0562826B2 publication Critical patent/JPH0562826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP60054628A 1985-03-20 1985-03-20 半導体装置 Granted JPS61214558A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60054628A JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60054628A JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS61214558A true JPS61214558A (ja) 1986-09-24
JPH0562826B2 JPH0562826B2 (enrdf_load_stackoverflow) 1993-09-09

Family

ID=12976018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60054628A Granted JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS61214558A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0165150U (enrdf_load_stackoverflow) * 1987-10-20 1989-04-26
JPH01191467A (ja) * 1988-01-27 1989-08-01 Matsushita Electron Corp Ｉｉｌ素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0165150U (enrdf_load_stackoverflow) * 1987-10-20 1989-04-26
JPH01191467A (ja) * 1988-01-27 1989-08-01 Matsushita Electron Corp Ｉｉｌ素子

Also Published As

Publication number Publication date
JPH0562826B2 (enrdf_load_stackoverflow) 1993-09-09

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