JPH0562826B2 - - Google Patents

Info

Publication number
JPH0562826B2
JPH0562826B2 JP60054628A JP5462885A JPH0562826B2 JP H0562826 B2 JPH0562826 B2 JP H0562826B2 JP 60054628 A JP60054628 A JP 60054628A JP 5462885 A JP5462885 A JP 5462885A JP H0562826 B2 JPH0562826 B2 JP H0562826B2
Authority
JP
Japan
Prior art keywords
iil
diffusion layer
layer
grounding
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60054628A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61214558A (ja
Inventor
Sadao Ogura
Shizuo Kondo
Yukinori Kitamura
Tomoyuki Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP60054628A priority Critical patent/JPS61214558A/ja
Publication of JPS61214558A publication Critical patent/JPS61214558A/ja
Publication of JPH0562826B2 publication Critical patent/JPH0562826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP60054628A 1985-03-20 1985-03-20 半導体装置 Granted JPS61214558A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60054628A JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60054628A JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS61214558A JPS61214558A (ja) 1986-09-24
JPH0562826B2 true JPH0562826B2 (enrdf_load_stackoverflow) 1993-09-09

Family

ID=12976018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60054628A Granted JPS61214558A (ja) 1985-03-20 1985-03-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS61214558A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610698Y2 (ja) * 1987-10-20 1994-03-16 三洋電機株式会社 半導体集積回路
JP2624280B2 (ja) * 1988-01-27 1997-06-25 松下電子工業株式会社 Ｉｉｌ素子

Also Published As

Publication number Publication date
JPS61214558A (ja) 1986-09-24

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