JPS61207040U - - Google Patents
Info
- Publication number
- JPS61207040U JPS61207040U JP9017685U JP9017685U JPS61207040U JP S61207040 U JPS61207040 U JP S61207040U JP 9017685 U JP9017685 U JP 9017685U JP 9017685 U JP9017685 U JP 9017685U JP S61207040 U JPS61207040 U JP S61207040U
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- chip
- power transistor
- die island
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第1図は本考案の一実施例のパワトランジスタ
の樹脂封止の説明のための断面図、第2図aは本
実施例のパワトランジスタの平面図、bは断面図
、第3図は従来のパワトランジスタの樹脂封止の
説明のために断面図、第4図は従来のパワトラン
ジスタの断面図である。 1,2…型、3…リードフレーム、4…半導体
チツプ、5…ワイヤ、6…封止樹脂、7…リード
フレーム。
の樹脂封止の説明のための断面図、第2図aは本
実施例のパワトランジスタの平面図、bは断面図
、第3図は従来のパワトランジスタの樹脂封止の
説明のために断面図、第4図は従来のパワトラン
ジスタの断面図である。 1,2…型、3…リードフレーム、4…半導体
チツプ、5…ワイヤ、6…封止樹脂、7…リード
フレーム。
Claims (1)
- 【実用新案登録請求の範囲】 リードフレームの放熱板として機能するダイア
イランドにパワトランジスタチツプを接着し、該
チツプの電極と上記リードフレームのリードとを
ワイヤにより接続し、上記ダイアイランドが完全
に内蔵され且つ該ダイアイランドの上記チツプ接
着面の反対面と樹脂の外面とが近接するように樹
脂封止したパワトランジスタにおいて、 上記リードフレームが均一厚で成り、該リード
フレームが、ダイアイランドが段底となるように
折曲加工され、該段底部分に上記チツプに接着さ
れたことを特徴とするパワトランジスタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9017685U JPS61207040U (ja) | 1985-06-17 | 1985-06-17 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9017685U JPS61207040U (ja) | 1985-06-17 | 1985-06-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61207040U true JPS61207040U (ja) | 1986-12-27 |
Family
ID=30644938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9017685U Pending JPS61207040U (ja) | 1985-06-17 | 1985-06-17 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61207040U (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60128646A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 絶縁型パワートランジスタの製造方法 |
-
1985
- 1985-06-17 JP JP9017685U patent/JPS61207040U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60128646A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 絶縁型パワートランジスタの製造方法 |