JPS61206918A - Magnetic storage body and its production - Google Patents

Magnetic storage body and its production

Info

Publication number
JPS61206918A
JPS61206918A JP4592685A JP4592685A JPS61206918A JP S61206918 A JPS61206918 A JP S61206918A JP 4592685 A JP4592685 A JP 4592685A JP 4592685 A JP4592685 A JP 4592685A JP S61206918 A JPS61206918 A JP S61206918A
Authority
JP
Japan
Prior art keywords
hydrogen
silicon carbide
magnetic
magnetic storage
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4592685A
Other languages
Japanese (ja)
Inventor
Hirotaka Yamaguchi
弘高 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4592685A priority Critical patent/JPS61206918A/en
Publication of JPS61206918A publication Critical patent/JPS61206918A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve wear resistance and corrosion preventiveness by coating an insulating silicon carbide film contg. hydrogen on a magnetic medium. CONSTITUTION:The magnetic medium 2 is coated on a substrate 1. The insulating silicon carbide 3 contg. hydrogen is further coated as a protective film on the medium 2. The insulating silicon carbide film contg. hydrogen to be used is incorporated therein with 5-30atom% hydrogen and is different from the silicon carbide which is formed by a sputtering method and does not contain hydrogen. Said film is an insulator having amorphous structure and >=50OMEGAcm electrical resistivity and the Vickers hardness thereof is >=1,000.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は磁気的記憶装置(磁気ディスク装置または磁気
ドラム装置など)に用いられる磁気記憶体およびその製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magnetic storage body used in a magnetic storage device (such as a magnetic disk device or a magnetic drum device) and a method for manufacturing the same.

(従来技術とその問題点) 一般に記録再生磁気ヘッド(以下ヘッドと呼ぶ)と磁気
記憶体とを構成部とする磁気記憶装置の記録再生方法に
は次のような方法がある。すなわち操作開始時にヘッド
と磁気記憶体面とを接触状態でセットした後、磁気記憶
体に所要の回転を与えることによりヘッドと磁気記憶体
面との間に空気要分の間隙を作シ、この状態で記録再生
をする方法である(コンタクト・スタート・ストップ方
式と称され以下C8S方式と記す)。この方法では操作
終了時に磁気記憶体の回転が止まり、この時ヘッドと磁
気記憶体面は操作開始時と同様に接触摩擦状態になる。
(Prior Art and its Problems) In general, there are the following methods for recording and reproducing a magnetic storage device that includes a recording and reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body. In other words, at the start of operation, the head and the magnetic storage surface are set in contact, and then the required rotation is applied to the magnetic storage to create a gap between the head and the magnetic storage surface, and in this state. This is a recording/reproducing method (referred to as the contact start/stop method, hereinafter referred to as the C8S method). In this method, the magnetic storage body stops rotating at the end of the operation, and at this time the head and the magnetic storage body surface are brought into a contact frictional state similar to that at the start of the operation.

これらの接触摩擦状態におけるヘッドと磁気記憶体の間
に生じる摩擦力はヘッドおよび磁気記憶体を摩耗させ、
ついにはヘッドおよび磁性媒体に傷を生じせしめること
がある。また、接触摩擦状態においてヘッドのわずかな
姿勢の変化がヘッドにかかる荷重を不均一にさせ、ヘッ
ドおよび磁気記憶体表面に傷を作ることもある。また、
磁性媒体が金属の場合、高湿度において水分の侵入によ
り腐食を生じる。これらの摩耗および腐食を防ぐために
種々の保護膜が検討されてきた。従来の磁気記憶体では
、スパッタリング法による炭化ケイ素膜等の保護膜が施
されているが、いずれも十分な耐摩耗性及び防食性を有
していないという欠点があった。
The frictional force generated between the head and the magnetic storage body in these contact friction states causes the head and the magnetic storage body to wear out.
Eventually, the head and magnetic medium may be damaged. Further, in a state of contact friction, a slight change in the posture of the head causes the load applied to the head to become uneven, which may cause scratches on the head and the surface of the magnetic storage body. Also,
When the magnetic medium is metal, corrosion occurs due to moisture intrusion at high humidity. Various protective films have been studied to prevent these wear and corrosion. Conventional magnetic memory bodies are coated with a protective film such as a silicon carbide film by sputtering, but these have the drawback of not having sufficient wear resistance and corrosion resistance.

(発明の目的) 本発明の目的は耐摩耗性と防食性に優れた磁気記憶体と
その製造方法を提供することに6る。
(Objective of the Invention) An object of the present invention is to provide a magnetic memory having excellent wear resistance and corrosion resistance, and a method for manufacturing the same.

(発明の構成) 本発明の磁気記憶体は、下地体と、この下地体上に被覆
された磁性媒体と、この磁性媒体上に被覆され少なくと
も水素を含有する絶縁性炭化ケイ素膜とを具備して構成
される。
(Structure of the Invention) The magnetic storage body of the present invention includes a base body, a magnetic medium coated on the base body, and an insulating silicon carbide film coated on the magnetic medium and containing at least hydrogen. It consists of

本発明の磁気記憶体の製造方法は、下地体の上に被覆さ
れた磁性媒体の上に少なくともテトラメチルシランと水
素ガスを含む雰囲気中でプラズマ化学気相法により炭化
ケイ素膜を被覆することを特徴とする。
The method for manufacturing a magnetic memory of the present invention includes coating a silicon carbide film on a magnetic medium coated on a base body by plasma chemical vapor deposition in an atmosphere containing at least tetramethylsilane and hydrogen gas. Features.

(実施例) 次に図面を参照して本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.

第1図は本発明の磁気記憶体の一実施しリの部分断面図
で、下地体1はアルミ合金又は陽極酸化アルマイ)、N
iPめっき膜、Cr、Mo又はW等を被覆したアルミ合
金又はポリエステル、ポリイミド、ポリアミドイミド、
ポリエーテルサルフオンなどのグラスチックス又は窒化
ケイ素、酸化アルミ、酸化アルミと炭化チタン焼結体な
どのセラミックス又はSi、Cr、Mo、W、ステンレ
ス、チタン合金などの金属又はガラス板である。
FIG. 1 is a partial sectional view of one embodiment of the magnetic memory body of the present invention, in which the base body 1 is made of aluminum alloy (or anodized aluminium), N
iP plating film, aluminum alloy or polyester coated with Cr, Mo or W, polyimide, polyamideimide,
Glass plates such as polyether sulfon, ceramics such as silicon nitride, aluminum oxide, sintered bodies of aluminum oxide and titanium carbide, metals such as Si, Cr, Mo, W, stainless steel, and titanium alloys, or glass plates.

次に下地体1の上に磁性媒体2としてFe504+α−
Fe、。3.Fe、Nなどの鉄酸化物又は窒化物、又は
Co−Ni−Mo又はCo−8m等の金属又は合金を被
覆する。
Next, Fe504+α- is placed on the base body 1 as the magnetic medium 2.
Fe,. 3. Coating iron oxides or nitrides such as Fe, N, or metals or alloys such as Co-Ni-Mo or Co-8m.

さらに磁性媒体2の上K、保a膜として少くとも水素を
含む絶縁性炭化ケイ素膜3が少なくともテトラメチルシ
ランと水素ガスを含む雰囲気中で、プラズマCVD法に
より被覆されている。
Further, on top of the magnetic medium 2, an insulating silicon carbide film 3 containing at least hydrogen as an a-retaining film is coated by plasma CVD in an atmosphere containing at least tetramethylsilane and hydrogen gas.

、 本発明で用いられる水素を含む絶縁性炭化ケイ素膜
は、水素が5〜30原子パーセント含まれておシスバッ
タリング法により作成された水素を含まない炭化ケイ素
とは異なる。構造は非晶質であシ、電気抵抗率は50Ω
cm以上の絶縁物であり、ビッカース硬度は1000以
上である。スパッタリング法により作成された水素を含
まない炭化ケイ素膜は、ビッカース硬度が600以下で
、構造が弱く、ヘッドの摺動によりディスク面から除去
され、磁気記憶体に十分な耐摩耗性を与えることができ
逐い。また、スパッタリング法により作成された水素を
含まない炭化ケイ素膜は高湿状態における水分の侵入を
防ぐ防食効果が劣っている。
The hydrogen-containing insulating silicon carbide film used in the present invention is different from hydrogen-free silicon carbide that contains 5 to 30 atomic percent hydrogen and is prepared by the cis battering method. Structure is amorphous, electrical resistivity is 50Ω
cm or more, and has a Vickers hardness of 1000 or more. Hydrogen-free silicon carbide films created by sputtering have a Vickers hardness of 600 or less, have a weak structure, and are removed from the disk surface by head sliding, making it difficult to provide magnetic storage with sufficient wear resistance. As soon as possible. Furthermore, silicon carbide films that do not contain hydrogen and are produced by sputtering have poor anticorrosive effects in preventing moisture from entering under high humidity conditions.

しかるに本発明の水素を含む絶縁性炭化ケイ素膜は高い
硬度および水分の侵入を防ぐち密さと撥水性を有してお
り、十分な耐摩耗性と防食性を有している。
However, the hydrogen-containing insulating silicon carbide film of the present invention has high hardness, density that prevents moisture from entering, and water repellency, and has sufficient wear resistance and corrosion resistance.

次に実施例により本発明の詳細な説明する。Next, the present invention will be explained in detail with reference to Examples.

実施例1 第1図に示す下地体1がアルミ合金の上にニッケルー燐
めっき膜が被覆され、表面粗さQ、QQ5Pに鏡面仕上
げされたもので、この下地体1の上に第1図に示す磁性
媒体2としてコバルト−ニッケルー燐合金を0.05μ
mの厚さにめっきした。次にこの磁性媒体2の上に第1
図に示す保護膜の水素を含む絶縁性炭化ケイ素膜3とし
てテトラメチルシランを含む水素ガス中で次の条件でプ
ラズマCVD法によ!D 0.05μmの厚さに被覆し
、磁気ディスクを作った。条件は0℃のテトラメチルシ
ラン中に水素ガスを通し、流量が20 SCCM、ガス
圧がl torr 、高周波電力が30Wであ)、膜中
に含まれる水素量が20原子パーセントである。
Example 1 The base body 1 shown in FIG. 1 is an aluminum alloy coated with a nickel-phosphorus plating film and mirror-finished to a surface roughness of Q, QQ5P. A cobalt-nickel-phosphorus alloy with a thickness of 0.05μ is used as the magnetic medium 2 shown in FIG.
Plated to a thickness of m. Next, a first
The hydrogen-containing insulating silicon carbide film 3 of the protective film shown in the figure was formed by plasma CVD in hydrogen gas containing tetramethylsilane under the following conditions. D A magnetic disk was produced by coating to a thickness of 0.05 μm. The conditions were as follows: hydrogen gas was passed through tetramethylsilane at 0° C., the flow rate was 20 SCCM, the gas pressure was 1 torr, and the high frequency power was 30 W), and the amount of hydrogen contained in the film was 20 atomic percent.

実施例2 実施例1と同様にして、但し、磁性媒体2としてスパッ
タリング法により、コバルト−クロム合金を0.5μm
の厚さに被覆し、磁気ディスクを作った。
Example 2 In the same manner as in Example 1, however, a cobalt-chromium alloy was deposited to a thickness of 0.5 μm by sputtering as the magnetic medium 2.
A magnetic disk was made by coating the material to a thickness of .

比較例 実施例1と同様にして但し、磁性媒体2の上に炭化ケイ
素を下記の条件でスパッタリング法により被覆して磁気
ディスクを作った。作成条件はアルゴンガス圧が4X 
I Q−2torr 、スパッタ電力密度が8νV/c
m2  である。
Comparative Example A magnetic disk was fabricated in the same manner as in Example 1, except that silicon carbide was coated on magnetic medium 2 by sputtering under the following conditions. The creation conditions are 4x argon gas pressure.
IQ-2torr, sputtering power density 8νV/c
m2.

次に実施例1,2および比較例で示した磁気ディスクを
用いてヘッドとディスクの起動停止縁シ返し試験(CS
S試験)および温度90℃、相対湿度90%における耐
食性試験を1ケ月行なったところ、実施例1,2に対し
ては共にC8S試験では、2万回以上傷が発生せず、耐
食性試験では、工2−増加率は変わらなかった。一方、
比較例に対しては、C8S試験では、3000回で傷が
発生し、耐食性試験では、エラー増加率が10倍に増加
した。
Next, using the magnetic disks shown in Examples 1 and 2 and the comparative example, a start/stop edge reversal test (CS) of the head and disk was performed.
When a corrosion resistance test was conducted for one month at a temperature of 90°C and a relative humidity of 90%, no scratches occurred over 20,000 times in the C8S test for both Examples 1 and 2, and in the corrosion resistance test, Engineering 2 - The rate of increase remained unchanged. on the other hand,
Regarding the comparative example, in the C8S test, scratches occurred after 3000 times, and in the corrosion resistance test, the error increase rate increased tenfold.

(発明の効果) 以上説明したように、本発明の磁気記憶体は、耐摩耗性
と防食性が優れているという効果がある。
(Effects of the Invention) As explained above, the magnetic memory of the present invention has the advantage of excellent wear resistance and corrosion resistance.

なお、本発明の実施例として磁気ディスクについて述べ
たが、フロッピーディスク、磁気テープ、磁気カードに
も本発明が有効であることは明らかである。
Although a magnetic disk has been described as an embodiment of the present invention, it is clear that the present invention is also effective for floppy disks, magnetic tapes, and magnetic cards.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の磁気記憶体の一実施例の部分断面図で
ある。 1・・・・・・下地体、2・・・・・・磁性媒体、3・
・・・・・水素を含む炭化ケイ素膜。
FIG. 1 is a partial cross-sectional view of one embodiment of the magnetic storage body of the present invention. 1... Base body, 2... Magnetic medium, 3.
...Silicon carbide film containing hydrogen.

Claims (2)

【特許請求の範囲】[Claims] (1)下地体と、この下地体上に被覆された磁性媒体と
、この磁性媒体上に被覆され少なくとも水素を含有する
絶縁性炭化ケイ素膜とを具備することを特徴とする磁気
記憶体。
(1) A magnetic memory body comprising a base body, a magnetic medium coated on the base body, and an insulating silicon carbide film coated on the magnetic medium and containing at least hydrogen.
(2)下地体の上に被覆された磁性媒体の上に少なくと
もテトラメチルシランと水素ガスを含む雰囲気中でプラ
ズマ化学気相法により炭化ケイ素膜を被覆することを特
徴とする磁気記憶体の製造方法。
(2) Manufacturing a magnetic memory body characterized by coating a magnetic medium coated on a base body with a silicon carbide film by plasma chemical vapor deposition in an atmosphere containing at least tetramethylsilane and hydrogen gas. Method.
JP4592685A 1985-03-08 1985-03-08 Magnetic storage body and its production Pending JPS61206918A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4592685A JPS61206918A (en) 1985-03-08 1985-03-08 Magnetic storage body and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4592685A JPS61206918A (en) 1985-03-08 1985-03-08 Magnetic storage body and its production

Publications (1)

Publication Number Publication Date
JPS61206918A true JPS61206918A (en) 1986-09-13

Family

ID=12732864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4592685A Pending JPS61206918A (en) 1985-03-08 1985-03-08 Magnetic storage body and its production

Country Status (1)

Country Link
JP (1) JPS61206918A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437711A (en) * 1987-08-01 1989-02-08 Hitachi Maxell Magnetic recording medium
US5423092A (en) * 1991-08-23 1995-06-13 Axe Co., Ltd. Goggles and sunglasses

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437711A (en) * 1987-08-01 1989-02-08 Hitachi Maxell Magnetic recording medium
US5423092A (en) * 1991-08-23 1995-06-13 Axe Co., Ltd. Goggles and sunglasses

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