JPS60209929A - Magnetic storage body and its production - Google Patents

Magnetic storage body and its production

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Publication number
JPS60209929A
JPS60209929A JP6630884A JP6630884A JPS60209929A JP S60209929 A JPS60209929 A JP S60209929A JP 6630884 A JP6630884 A JP 6630884A JP 6630884 A JP6630884 A JP 6630884A JP S60209929 A JPS60209929 A JP S60209929A
Authority
JP
Japan
Prior art keywords
magnetic
coated
medium
fluorine
magnetic storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6630884A
Other languages
Japanese (ja)
Inventor
Masahiro Yanagisawa
雅広 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6630884A priority Critical patent/JPS60209929A/en
Publication of JPS60209929A publication Critical patent/JPS60209929A/en
Pending legal-status Critical Current

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  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To obtain a magnetic storage body having excellent wear resistance and corrosion preventiveness by forming an insulating carbon film contg. fluorine on a medium and having a three-dimensional structure on a magnetic medium coated on a substrate. CONSTITUTION:A substrate 1 consists of an aluminum alloy or anodized alumite, NiP-plated film, aluminum alloy coated with Cr, Mo or W, etc., ceramics such as polyester or metals such as Si, Cr, Mo, W, stainless steel and titanium alloy or glass plate. A metal or alloy of iron oxide or nitride, etc. such as Fe3O4, gamma-Fe2O3, Fe4N or the like is coated as a magnetic medium 2 on the substrate 1. An insulating carbon film 3 contg. fluorine is further coated on the medium 2 by sputtering carbon in an atmosphere contg. gaseous fluorocarbon.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は磁気的記憶装置(磁気ディスク装置または磁気
ドラム装置など)に用いられる磁気記憶体およびその製
造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magnetic storage body used in a magnetic storage device (such as a magnetic disk device or a magnetic drum device) and a method for manufacturing the same.

(従来技術とその問題点) 一般に記録再生磁気ヘッド(以下ヘッドと呼ぶ)と磁気
記憶体とを構成部とする磁気記憶装置の記録再生方法に
は次のような方法がある。すなわち操作開始時にヘッド
と磁気記憶体面とを接触状態でセットした後、磁気記憶
体に所要の回転を与えることによりヘッドと磁気記憶体
面との間に空気層分の空間を作り、この状態で記録再生
をする方法である(コンタクト・スタート・ストップ方
式。
(Prior Art and its Problems) In general, there are the following methods for recording and reproducing a magnetic storage device that includes a recording and reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body. In other words, after setting the head and the magnetic storage surface in contact at the start of operation, the required rotation is given to the magnetic storage to create a space equivalent to an air layer between the head and the magnetic storage surface, and recording is performed in this state. This is a method of playback (contact start-stop method).

LJTC8S力を声呼ぶ)−t’θ)有溶では場外認了
時に磁気記憶体の回転が止まり、この時ヘッドと磁気記
憶体面は操作開始時と同様に接触摩擦状態にある。
(call out LJTC8S force)-t'θ) In the molten state, the rotation of the magnetic storage body stops at the time of out-of-field recognition, and at this time, the head and the magnetic storage body surface are in a contact friction state as at the start of operation.

これらの接触摩擦状態におけるヘッドと磁気記゛ 憶体
の間に生じる摩擦力は、ヘッドおよび磁気記憶体を摩耗
させ、ついにはヘッドおよび磁性媒体に傷を生じせしめ
ることがある。また前記接触摩擦状態においてヘッドの
わずかな姿勢の変化がヘッドにかかる荷重を不均一にさ
せ、ヘッドおよび磁気記憶体表面に傷を作ることもある
。また、磁性媒体が金属の場合、高湿度において水分の
侵入により腐食を生じる。これらの摩耗および腐食を防
ぐために種々の保護膜が検討されており、特開昭53−
57002 に示す様なスパッタリング法によるグラフ
ァイト膜、あるいは特公昭54−33521に示す様に
炭素棒のスパーク放電による蒸着法による炭素膜が知ら
れているが、いずれも十分な耐摩耗性及び防食性を有し
ていない。
The frictional force generated between the head and the magnetic storage body under these contact friction conditions may wear out the head and the magnetic storage body, and may eventually cause scratches on the head and the magnetic medium. Further, in the contact friction state, a slight change in the posture of the head causes the load applied to the head to become uneven, which may cause scratches on the head and the surface of the magnetic storage body. Furthermore, if the magnetic medium is metal, corrosion occurs due to moisture intrusion at high humidity. In order to prevent these wear and corrosion, various protective films have been studied, and
Graphite films made by sputtering as shown in No. 57002, and carbon films made by vapor deposition using spark discharge from carbon rods as shown in Japanese Patent Publication No. 54-33521 are known, but both of them have sufficient wear resistance and anticorrosion properties. I don't have it.

(発明の目的) 本発明の目的は耐摩耗性と防食性に優れた磁気記憶体を
提供することにある。
(Object of the Invention) An object of the present invention is to provide a magnetic memory having excellent wear resistance and corrosion resistance.

(発明の構成) すなわち、本発明は下地体の上に磁性媒体が被覆され、
該媒体上にふっ素を含有し、3次元構造を有する絶縁性
炭素膜が形成された磁気記憶体、及び下地体上に磁性媒
体を形成し、この後該磁性媒体上にふっ素化炭素ガスを
含む雰囲気中で炭素をスパッタリングすることにより、
ふっ素を含有する絶縁性炭素膜を被覆することを特徴と
する磁気記憶体の製造方法である。
(Structure of the Invention) That is, the present invention has a magnetic medium coated on a base body,
A magnetic storage body in which an insulating carbon film containing fluorine and having a three-dimensional structure is formed on the medium, and a magnetic medium is formed on a base body, and then a fluorinated carbon gas is formed on the magnetic medium. By sputtering carbon in an atmosphere,
This is a method for manufacturing a magnetic memory body characterized by coating it with an insulating carbon film containing fluorine.

(構成の詳細な説明) 次に図面を参照して本発明の詳細な説明する。(Detailed explanation of configuration) Next, the present invention will be described in detail with reference to the drawings.

図は本発明の磁気記憶体の部分断面図で、下地体1はア
ルミ合金又は陽極酸化アルマイト、NiPめっき膜、O
r、Mo又はW等を被覆したアルミ合金又はポリエステ
ル、ポリイミド、ポリアミドイミド、ポリエーテルサル
フォンなどのプラスチックス又は窒化ケイ素、炭化ケイ
素、酸化アルミ。
The figure is a partial cross-sectional view of the magnetic storage body of the present invention, in which the base body 1 is made of aluminum alloy or anodized alumite, NiP plating film, O
Aluminum alloy coated with R, Mo or W, or plastics such as polyester, polyimide, polyamideimide, polyethersulfone, or silicon nitride, silicon carbide, aluminum oxide.

酸化アルミと炭化チタン焼結体などのセラミックス又は
8i、Cr、Mo、W、ステンレス、チタン合金などの
金属又はガラス板である。
They are ceramics such as aluminum oxide and titanium carbide sintered bodies, metals such as 8i, Cr, Mo, W, stainless steel, titanium alloys, or glass plates.

次にこの下地体1の上に磁性媒体2としてre、0. 
、 γ−Fe、O,、re、Nなどの鉄酸化物又は窒化
物、又はCo −Ni 、 Co−Ni −P 、 C
o−几e。
Next, a magnetic medium 2 with re, 0.
, γ-Fe, O, , re, N, or other iron oxides or nitrides, or Co-Ni, Co-Ni-P, C
o-几e.

Co−Ni −Mn−几e−P 、 Co−Cr 、 
Co−V 。
Co-Ni-Mn-e-P, Co-Cr,
Co-V.

Co−Pt 、 Co−Ni −Pt 、 Co−Pt
 −Cr 。
Co-Pt, Co-Ni-Pt, Co-Pt
-Cr.

Co−Pt −V 、 Co−Rh 、 Co−Ni−
Mo又はCo−8m等の金属又は合金を被覆する。
Co-Pt-V, Co-Rh, Co-Ni-
Coating with metal or alloy such as Mo or Co-8m.

さらに該磁性媒体2の上にふっ素を含む絶縁性炭素膜3
がふっ素化炭素ガスを含む雰囲気中で炭素をスパッタリ
ングすることにより被覆されている。本発明で用いられ
るふっ素を含む絶縁性炭素膜はふっ素が50原子パーセ
ント以下含まれているが、いわゆる層状構造を有するふ
り化カーボンとは異なる。構造はダイアモンド類似であ
り、電気抵抗率は10−20・二 以上の絶縁物であり
、電気抵抗率が1O−20・σ 以下の導電性の1−状
黒鉛(グラファイト)や無定形炭素とも異なる。層状構
造を有するぶつ化カーボンあるいはグラファイト、無定
形炭素は構造が弱く−ヘッドの摺動によりディスク面か
ら除去され、磁気記憶体に十分な耐摩耗性を与えること
が出来ない。またダイアモンド類構造を有する炭素膜は
硬度は高いが、摩擦係数が大きいためヘッドの摺動によ
り傷が付き易く、やはり、十分な耐摩耗性を与えること
が出来ない。
Furthermore, an insulating carbon film 3 containing fluorine is provided on the magnetic medium 2.
is coated by sputtering carbon in an atmosphere containing fluorinated carbon gas. The fluorine-containing insulating carbon film used in the present invention contains 50 atomic percent or less of fluorine, but is different from fluorinated carbon having a so-called layered structure. Its structure is similar to diamond, and it is an insulating material with an electrical resistivity of 10-20.2 or more, which is different from conductive 1-like graphite (graphite) and amorphous carbon, which have an electrical resistivity of 10-20.σ or less. . Battered carbon or graphite, which has a layered structure, and amorphous carbon have a weak structure - they are removed from the disk surface by the sliding of the head, and cannot provide sufficient wear resistance to the magnetic memory. Further, although the carbon film having a diamond-like structure has high hardness, it has a large coefficient of friction and is easily scratched by the sliding of the head, so that it cannot provide sufficient wear resistance.

また、ダイアモンド類似構造の炭素膜は高湿状態におけ
る水分の侵入を防ぐ防食効果が劣っている。
Furthermore, a carbon film with a diamond-like structure has a poor anticorrosive effect in preventing moisture from entering under high humidity conditions.

また層状ふっ化カーボン膜も結晶間のすきまが大きく、
十分な防食効果が得られない。
In addition, the layered fluorinated carbon film also has large gaps between crystals,
Sufficient anti-corrosion effect cannot be obtained.

しかるに本発明のふっ素を含有する絶縁性炭素膜は高い
硬度と低い摩擦係数および水分の侵入を防ぐち密さと撥
水性を有しており、十分な耐摩耗性と防食性を有してい
る。
However, the fluorine-containing insulating carbon film of the present invention has high hardness, a low coefficient of friction, a density that prevents moisture from entering, and water repellency, and has sufficient wear resistance and corrosion resistance.

また本発明のふっ素を含有する絶縁性炭素膜はふっ素化
炭素ガス中で炭素をスパッタリング又はイオンプレーテ
ング又は蒸着することにより被覆することが出来る。こ
こで用いるふっ素化炭素ガスは蒸気圧の高い下記の構造
を有する物質である。
Further, the fluorine-containing insulating carbon film of the present invention can be coated by sputtering, ion plating, or vapor deposition of carbon in a fluorinated carbon gas. The fluorinated carbon gas used here is a substance with a high vapor pressure and the following structure.

すなわち、CnFzn−t+2X1 (nはIO以下の
整数、lはO〜2n+1の整数、XはH、C7l 、 
、Brまたは■)であり、又はCnFzn−tnXm 
(nは10以下の整数、mは0〜2 n−1の整数、X
はH,(J、Br または■)である。
That is, CnFzn-t+2X1 (n is an integer less than or equal to IO, l is an integer from O to 2n+1, X is H, C7l,
, Br or ■), or CnFzn-tnXm
(n is an integer of 10 or less, m is an integer of 0 to 2 n-1,
is H, (J, Br or ■).

次に実施例により本発明の詳細な説明する。Next, the present invention will be explained in detail with reference to Examples.

(実施例1) アルミ合金の上にニッケルー燐めっき膜が被覆され、表
面粗さ0.005μmに鏡面仕上げされた下地体1の上
に磁性媒体2としてコバルト−ニッケルー燐合金を0.
05μmの厚さにめっきした。次にこの磁性媒体2の上
に保護膜3として炭素をふっ素化炭素ガスとしてCF4
ガス中で次の条件でスパッタリングし、ふっ素を含む絶
縁性炭素膜を0.05μmの厚さに被覆し、磁気ディス
クを作った。条件はガス圧比(PAr/PN2)〜16
.スパッタガス圧lXl0−2torr 、スパッタ電
力密度: 8 W/cm2であり、膜中に含まれるふっ
素置=lO原子パーセントである。
(Example 1) A cobalt-nickel-phosphorus alloy was coated as a magnetic medium 2 on a base body 1 in which an aluminum alloy was coated with a nickel-phosphorus plating film and mirror-finished to a surface roughness of 0.005 μm.
It was plated to a thickness of 0.05 μm. Next, a protective film 3 is formed on the magnetic medium 2 using carbon as a fluorinated carbon gas.
A magnetic disk was produced by sputtering in a gas under the following conditions to coat an insulating carbon film containing fluorine to a thickness of 0.05 μm. Conditions are gas pressure ratio (PAr/PN2) ~16
.. The sputtering gas pressure was 1X10-2 torr, the sputtering power density was 8 W/cm2, and the amount of fluorine contained in the film was 10 atomic percent.

(実施例2) 実施例1と同様にして、但し磁性媒体2としてスパッタ
リング法によりコバルト−クロム合金を0.5μmの厚
さに被覆し、磁気ディスクを作った。
(Example 2) A magnetic disk was produced in the same manner as in Example 1, except that the magnetic medium 2 was coated with a cobalt-chromium alloy to a thickness of 0.5 μm by sputtering.

(実施例3) 実施例1と同様にして但しふっ素化炭素ガスとしてC,
F8ガスを用いて磁気ディスクを作った。
(Example 3) Same as Example 1 except that C, C, and fluorinated carbon gas were used.
A magnetic disk was made using F8 gas.

(実施例4) 実施例2と同様にして但し次の条件によりスパッタリン
グし、ふっ素を含む絶縁性炭素膜を0.02μmの厚さ
に被覆し、磁気ディスクを作った。実験条件はガス圧比
(PAr/ PN2 ) ’ ” * スパッタガス圧
4X10 torr 、スパッタ電力密度:10■々が
であり、膜中に含まれるふっ素置:1原子パーセントで
ある。
(Example 4) A magnetic disk was produced by sputtering in the same manner as in Example 2 but under the following conditions to coat an insulating carbon film containing fluorine to a thickness of 0.02 μm. The experimental conditions were as follows: gas pressure ratio (PAr/PN2)' * sputtering gas pressure 4×10 torr, sputtering power density: 10 torr, and fluorine content in the film: 1 atomic percent.

(実施例5) 実施例1と同様にして但し下記の条件でふっ素化炭素ガ
スとしてCF、 =: CF、ガスを用いて磁気ディス
クを作った。実験条件はガス圧比(PA、/Ps、 )
〜30.スパッタガス圧8 X 10 ”torr 、
スパッタ電力密度:5W/crIL2であり、膜中に含
まれるふっ素置;40原子パーセントである。
(Example 5) A magnetic disk was manufactured in the same manner as in Example 1, except that CF, =: CF, gas was used as the fluorinated carbon gas under the following conditions. The experimental conditions were gas pressure ratio (PA, /Ps, )
~30. Sputtering gas pressure 8×10”torr,
Sputtering power density: 5 W/crIL2, and fluorine content in the film: 40 atomic percent.

(比較例1) 実施例1と同様にして但し磁性媒体2の上に炭素を下記
の条件でスパッタリング法により被覆して磁気ディスク
を作った。実験条件はガス圧PAr: 4X10−2t
orr 、 スパッタ電力密度: 8W/Cl71”で
ある。
(Comparative Example 1) A magnetic disk was manufactured in the same manner as in Example 1, except that carbon was coated on the magnetic medium 2 by sputtering under the following conditions. Experimental conditions were gas pressure PAr: 4X10-2t
orr, sputtering power density: 8W/Cl71''.

(比較例2) 比較例1と同様にして但し磁性媒体2の上に層状ふっ化
カーボンをスパッタリング法により被接して磁気ディス
クを作った。
(Comparative Example 2) A magnetic disk was produced in the same manner as Comparative Example 1, except that layered fluorinated carbon was applied onto the magnetic medium 2 by sputtering.

次に実施例1〜5および比較例1.2で示した磁気ディ
スクを用いて摩擦係数の測定およびヘッドとディスクの
起動停止繰り返し試験(CSS試験)および温度(社)
℃、相対湿度90%における耐食性試験を1ケ月行なっ
たところ下表の結果を得た。
Next, using the magnetic disks shown in Examples 1 to 5 and Comparative Example 1.2, the friction coefficient was measured, the head and disk were started and stopped repeatedly tested (CSS test), and the temperature
A corrosion resistance test was conducted for one month at 90% relative humidity and the results shown in the table below were obtained.

(発明の効果) 以上の結果から明らかなように本発明の磁気記憶性は優
れた耐摩耗性と防食性を有していることが分った。
(Effects of the Invention) As is clear from the above results, it was found that the magnetic memory of the present invention has excellent wear resistance and corrosion resistance.

なお、本発明の実施例では磁気ディスクについて述べた
が、フロッピーディスク、磁気テープ。
In the embodiments of the present invention, magnetic disks have been described, but floppy disks and magnetic tapes may also be used.

磁気カードにも本発明が有効であることは明らかである
It is clear that the present invention is also effective for magnetic cards.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の磁気記憶体の部分断面図である。 1は下地体、2は磁性媒体、3はふっ素を含む絶縁性炭
素膜である。
The figure is a partial sectional view of the magnetic storage body of the present invention. 1 is a base body, 2 is a magnetic medium, and 3 is an insulating carbon film containing fluorine.

Claims (1)

【特許請求の範囲】 +1) 下地体の上に磁性媒体が被覆され、さらに該媒
体上にふっ素を含有し、3次元構造を有する絶縁性炭素
膜が被覆されていることを特徴とする磁気記憶体。 (2) 絶縁性炭素膜中にはふっ素が50原子パーセン
ト以下含まれている特許請求の範囲第1項記載の磁気記
憶体。 (3)下地体の上に磁性媒体を被覆し、さらにその上に
ふっ素化炭素ガスを含む雰囲気中で炭素をスパッタリン
グすることを特徴とする磁気記憶体の製造方法。 (4) ふっ素化炭素ガスがCnFzn−t+zXt 
(nは10以下の整数、!はO〜2n+1の整数、xハ
i−t、cl。 Brまたは工)である特許請求の範囲第3項記載(5)
ふっ素化炭素ガスがCnFzn−mXm (nは10以
下の整数1mはθ〜2n−1の整数、XはH,C1゜B
rまたはI)である特許請求の範囲第3項記載の磁気記
憶体。
[Claims] +1) A magnetic memory characterized in that a magnetic medium is coated on a base body, and an insulating carbon film containing fluorine and having a three-dimensional structure is further coated on the medium. body. (2) The magnetic memory body according to claim 1, wherein the insulating carbon film contains 50 atomic percent or less of fluorine. (3) A method for manufacturing a magnetic memory body, which comprises coating a magnetic medium on a base body and sputtering carbon thereon in an atmosphere containing fluorinated carbon gas. (4) Fluorinated carbon gas is CnFzn-t+zXt
(n is an integer of 10 or less, ! is an integer of 0 to 2n+1, x height, cl. Br or engineering) as described in claim 3 (5)
Fluorinated carbon gas is CnFzn-mXm (n is an integer of 10 or less, 1m is an integer of θ to 2n-1, X is H, C1°B
The magnetic storage body according to claim 3, which is r or I).
JP6630884A 1984-04-03 1984-04-03 Magnetic storage body and its production Pending JPS60209929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6630884A JPS60209929A (en) 1984-04-03 1984-04-03 Magnetic storage body and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6630884A JPS60209929A (en) 1984-04-03 1984-04-03 Magnetic storage body and its production

Publications (1)

Publication Number Publication Date
JPS60209929A true JPS60209929A (en) 1985-10-22

Family

ID=13312052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6630884A Pending JPS60209929A (en) 1984-04-03 1984-04-03 Magnetic storage body and its production

Country Status (1)

Country Link
JP (1) JPS60209929A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344318A (en) * 1986-08-09 1988-02-25 Hitachi Maxell Ltd Production of magnetic recording medium
JPS63268127A (en) * 1987-04-24 1988-11-04 Nec Corp Magnetic memory body and its production
CN104532396A (en) * 2014-12-23 2015-04-22 黑龙江大学 Preparation method of composite nano-fiber material with photo-electromagnetic characteristics

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156931A (en) * 1980-05-06 1981-12-03 Nec Corp Magnetic storage medium
JPS5888828A (en) * 1981-11-19 1983-05-27 Matsushita Electric Ind Co Ltd Magnetic recording medium and its manufacture
JPS60179935A (en) * 1984-02-24 1985-09-13 Tokyo Electric Co Ltd Vertical magnetic recording medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156931A (en) * 1980-05-06 1981-12-03 Nec Corp Magnetic storage medium
JPS5888828A (en) * 1981-11-19 1983-05-27 Matsushita Electric Ind Co Ltd Magnetic recording medium and its manufacture
JPS60179935A (en) * 1984-02-24 1985-09-13 Tokyo Electric Co Ltd Vertical magnetic recording medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344318A (en) * 1986-08-09 1988-02-25 Hitachi Maxell Ltd Production of magnetic recording medium
JPS63268127A (en) * 1987-04-24 1988-11-04 Nec Corp Magnetic memory body and its production
CN104532396A (en) * 2014-12-23 2015-04-22 黑龙江大学 Preparation method of composite nano-fiber material with photo-electromagnetic characteristics

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