JPS61201688A - ３−５族化合物半導体単結晶の製造方法 - Google Patents
３−５族化合物半導体単結晶の製造方法Info
- Publication number
- JPS61201688A JPS61201688A JP4183585A JP4183585A JPS61201688A JP S61201688 A JPS61201688 A JP S61201688A JP 4183585 A JP4183585 A JP 4183585A JP 4183585 A JP4183585 A JP 4183585A JP S61201688 A JPS61201688 A JP S61201688A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- solid
- melt
- cross
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 150000001875 compounds Chemical class 0.000 title claims description 5
- 238000009826 distribution Methods 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000000155 melt Substances 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 description 21
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4183585A JPS61201688A (ja) | 1985-03-05 | 1985-03-05 | ３−５族化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4183585A JPS61201688A (ja) | 1985-03-05 | 1985-03-05 | ３−５族化合物半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201688A true JPS61201688A (ja) | 1986-09-06 |
| JPH0251875B2 JPH0251875B2 (enrdf_load_stackoverflow) | 1990-11-08 |
Family
ID=12619317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4183585A Granted JPS61201688A (ja) | 1985-03-05 | 1985-03-05 | ３−５族化合物半導体単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201688A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02204385A (ja) * | 1989-01-31 | 1990-08-14 | Mitsubishi Monsanto Chem Co | ３―ｖ族化合物半導体単結晶及び製造方法 |
-
1985
- 1985-03-05 JP JP4183585A patent/JPS61201688A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02204385A (ja) * | 1989-01-31 | 1990-08-14 | Mitsubishi Monsanto Chem Co | ３―ｖ族化合物半導体単結晶及び製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0251875B2 (enrdf_load_stackoverflow) | 1990-11-08 |
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