JPS6120129B2 - - Google Patents
Info
- Publication number
- JPS6120129B2 JPS6120129B2 JP14354877A JP14354877A JPS6120129B2 JP S6120129 B2 JPS6120129 B2 JP S6120129B2 JP 14354877 A JP14354877 A JP 14354877A JP 14354877 A JP14354877 A JP 14354877A JP S6120129 B2 JPS6120129 B2 JP S6120129B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- tube
- silicon
- reaction tube
- impregnated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 50
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910021426 porous silicon Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Furnace Details (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14354877A JPS5490967A (en) | 1977-11-30 | 1977-11-30 | Method of fabricating silicon carbide reactive tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14354877A JPS5490967A (en) | 1977-11-30 | 1977-11-30 | Method of fabricating silicon carbide reactive tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5490967A JPS5490967A (en) | 1979-07-19 |
| JPS6120129B2 true JPS6120129B2 (enrdf_load_stackoverflow) | 1986-05-21 |
Family
ID=15341297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14354877A Granted JPS5490967A (en) | 1977-11-30 | 1977-11-30 | Method of fabricating silicon carbide reactive tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5490967A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521297Y2 (enrdf_load_stackoverflow) * | 1986-07-31 | 1993-06-01 | ||
| JPH0382117A (ja) * | 1989-08-25 | 1991-04-08 | Toshiba Ceramics Co Ltd | 半導体ウエハ処理用治具の製造方法 |
| CN102317500B (zh) * | 2009-02-12 | 2015-04-01 | 格里菲斯大学 | 化学气相沉积系统和工艺 |
-
1977
- 1977-11-30 JP JP14354877A patent/JPS5490967A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5490967A (en) | 1979-07-19 |
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