JPS6120041Y2 - - Google Patents
Info
- Publication number
- JPS6120041Y2 JPS6120041Y2 JP6318683U JP6318683U JPS6120041Y2 JP S6120041 Y2 JPS6120041 Y2 JP S6120041Y2 JP 6318683 U JP6318683 U JP 6318683U JP 6318683 U JP6318683 U JP 6318683U JP S6120041 Y2 JPS6120041 Y2 JP S6120041Y2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- crucible
- melt
- substrate
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002994 raw material Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 46
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 9
- 239000000155 melt Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6318683U JPS59169368U (ja) | 1983-04-27 | 1983-04-27 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6318683U JPS59169368U (ja) | 1983-04-27 | 1983-04-27 | 液相エピタキシヤル成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59169368U JPS59169368U (ja) | 1984-11-13 |
JPS6120041Y2 true JPS6120041Y2 (US20100056889A1-20100304-C00004.png) | 1986-06-17 |
Family
ID=30193378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6318683U Granted JPS59169368U (ja) | 1983-04-27 | 1983-04-27 | 液相エピタキシヤル成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59169368U (US20100056889A1-20100304-C00004.png) |
-
1983
- 1983-04-27 JP JP6318683U patent/JPS59169368U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59169368U (ja) | 1984-11-13 |