JPS6120035U - Vapor phase growth equipment - Google Patents

Vapor phase growth equipment

Info

Publication number
JPS6120035U
JPS6120035U JP10390184U JP10390184U JPS6120035U JP S6120035 U JPS6120035 U JP S6120035U JP 10390184 U JP10390184 U JP 10390184U JP 10390184 U JP10390184 U JP 10390184U JP S6120035 U JPS6120035 U JP S6120035U
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
heat source
growth apparatus
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10390184U
Other languages
Japanese (ja)
Inventor
重次 松永
公弟 岩田
Original Assignee
東芝機械株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝機械株式会社 filed Critical 東芝機械株式会社
Priority to JP10390184U priority Critical patent/JPS6120035U/en
Publication of JPS6120035U publication Critical patent/JPS6120035U/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第4図は本考案の一実施例を示すもので、
第1図は気相成長装置の構成を概略的に示す概略的断面
図、第2図は要部である反射部材の概略的平面図、第3
図は第2図■−■線に沿う断面図、第4図は加熱状態の
説明図、第5図は従来装置の概略的断面図である。 2・・・・・・石英ベルジャー、3・・・・・・半導体
基板(ウエハー)、4・・・・・・サセプタ、5・・・
・・・主熱源(高周波コイル)、6・・・・・・ノズル
、8・・・・・・反応室、9・・・・・・金属製ベルジ
ャー、10・・・・・・補助熱源(ハロゲンランプ)、
11・・・・・・反射部材(反射ミラー)、11a・−
・・・・・中心部ミラー(分割反射部材)、llb・・
・・・・揺動ミラー(分割反射部材)。
Figures 1 to 4 show an embodiment of the present invention.
FIG. 1 is a schematic cross-sectional view schematically showing the structure of the vapor phase growth apparatus, FIG. 2 is a schematic plan view of a reflecting member which is the main part, and FIG.
The figures are a sectional view taken along line 2--2 in FIG. 2, FIG. 4 is an explanatory view of the heating state, and FIG. 5 is a schematic sectional view of the conventional device. 2...Quartz bell jar, 3...Semiconductor substrate (wafer), 4...Susceptor, 5...
...Main heat source (high frequency coil), 6...Nozzle, 8...Reaction chamber, 9...Metal bell jar, 10...Auxiliary heat source ( Halogen lamp),
11...Reflection member (reflection mirror), 11a.-
...Center mirror (divided reflective member), llb...
...Owing mirror (divided reflective member).

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)反応室内に設けられ半導体基板が載置されるサセ
iタを主熱源で加熱するとともにサセプタ上の半導体基
板を前記反応室を形成する石英ベルジャーの外側、かつ
、前記サセプタと対向する状態に設けられ、背部を反射
部材で囲繞された補助熱源によって加熱するようにした
気相成長装置であって、補助熱源の背部を囲繞する前記
反射部材を、反射角を調整できる複数個の分割反射部材
で構成したことを特徴とする気相成長装置。
(1) A state in which a susceptor provided in a reaction chamber and on which a semiconductor substrate is placed is heated by a main heat source, and the semiconductor substrate on the susceptor is placed outside the quartz bell jar forming the reaction chamber and facing the susceptor. A vapor phase growth apparatus is provided in which the back part of the vapor phase growth apparatus is heated by an auxiliary heat source surrounded by a reflective member, and the reflective member surrounding the back part of the auxiliary heat source is divided into a plurality of divided reflectors whose reflection angles can be adjusted. A vapor phase growth apparatus characterized in that it is composed of members.
(2)複数の分割反射部材が、中心部ミラーと、この周
囲に配設された複数個の揺動ミラーとからなることを特
徴とする実用新案登録請求の範囲第1項記載の気相成長
装置。
(2) Vapor phase growth according to claim 1 of the utility model registration, characterized in that the plurality of divided reflection members are composed of a central mirror and a plurality of swinging mirrors arranged around the center mirror. Device.
(3)補助熱源がその背部を反射部材で囲繞されたハロ
ゲンランプからなることを特徴とする実用新案登録請求
の範囲第1項記載の気相成長装置。
(3) The vapor phase growth apparatus according to claim 1, wherein the auxiliary heat source comprises a halogen lamp whose back is surrounded by a reflective member.
JP10390184U 1984-07-10 1984-07-10 Vapor phase growth equipment Pending JPS6120035U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10390184U JPS6120035U (en) 1984-07-10 1984-07-10 Vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10390184U JPS6120035U (en) 1984-07-10 1984-07-10 Vapor phase growth equipment

Publications (1)

Publication Number Publication Date
JPS6120035U true JPS6120035U (en) 1986-02-05

Family

ID=30663270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10390184U Pending JPS6120035U (en) 1984-07-10 1984-07-10 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS6120035U (en)

Similar Documents

Publication Publication Date Title
US5119761A (en) Substrate heating apparatus for forming thin films on substrate surface
JPH0789541B2 (en) Spoke support for susceptor that improves heat distribution in susceptor of semiconductor wafer processing equipment
JPS6471117A (en) Reflector for cvd reactor
JPS6120035U (en) Vapor phase growth equipment
JPH05238882A (en) Susceptor for vapor growth
JPS63196033A (en) Vapor growth device
JPS6120033U (en) Vapor phase growth equipment
JPS6120036U (en) Vapor phase growth equipment
JPH07118465B2 (en) Susceptor for vertical epitaxial device
JPS6120034U (en) Vapor phase growth equipment
JPS60146335U (en) Vapor phase reaction growth equipment
JPH036018A (en) Lamp annealing apparatus for semiconductor device manufacture
JPH0661165A (en) Heat treatment device
JPS631024A (en) Epitaxial growth system
JPH0345954Y2 (en)
JPS6085836U (en) Infrared heat treatment equipment for semiconductor substrates
JPH0713289B2 (en) Induction plasma spraying method
JPH046389A (en) Lamp heating device
KR20010111638A (en) Heater module with coated reflection plate
JPS60185331U (en) Vapor phase growth equipment
JPS6422025U (en)
JPH047189Y2 (en)
JPS599083U (en) Vapor phase growth equipment
JPH0186236U (en)
JPH043006Y2 (en)