JPS6085836U

JPS6085836U - Infrared heat treatment equipment for semiconductor substrates

Info

Publication number: JPS6085836U
Application number: JP17882083U
Authority: JP
Inventors: 日浦　和夫; 雅行鈴木
Original assignee: 株式会社日立国際電気
Priority date: 1983-11-21
Filing date: 1983-11-21
Publication date: 1985-06-13

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は従来のウェハの赤外線熱処理装置の構成側断面
図、第２図は熱放射によるウェハ周辺部への熱放散の説
明図、第３図は従来の別なウェハの赤外線熱処理装置の
構成側断面図、第４図は従来の赤外線ランプ群への電力
供給回路図、第５図および第６図は本考案を実施したウ
ェハの赤外線熱処理装置の互に直角方向の構成側断面図
、第７図は本考案に用いる赤外線ランプ群への電力供給
回路の一例図、第８図は本考案の実施によって得られる
ウェハ面の放射照度特性側図、第９図は赤外線ランプの
タングステンフィラメントの巻き方の一例図である。１・・・半導体基板（ウェハ）、２・・・赤外線ランプ
、３・・・反射鏡（板）、４・・・石英壁、５・・・棒
状赤外線放射源、６・・・サセプタ、７．７’、７“・
・・制御器付電源、８，９・・・上側、下側の各赤外線
放射源、１０．１０’・・・金属体シャッタ、１１，１
１′・・・石英壁シャッタ、１２．１２’・・・反射壁
、１３・・・タングステンフィラメント、１４・・・石
英管、１５・・・赤外線ランプの電極。Figure 1 is a side sectional view of the configuration of a conventional infrared heat treatment apparatus for wafers, Figure 2 is an explanatory diagram of heat dissipation to the periphery of the wafer by thermal radiation, and Figure 3 is the configuration of another conventional infrared heat treatment apparatus for wafers. 4 is a diagram of a conventional power supply circuit for a group of infrared lamps, and FIGS. 5 and 6 are side sectional views of a wafer infrared heat treatment apparatus according to the present invention taken in mutually perpendicular directions. Figure 7 is an example of the power supply circuit for the infrared lamp group used in the present invention, Figure 8 is a side view of the irradiance characteristics of the wafer surface obtained by implementing the present invention, and Figure 9 is the winding of the tungsten filament of the infrared lamp. FIG. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate (wafer), 2... Infrared lamp, 3... Reflector (plate), 4... Quartz wall, 5... Rod-shaped infrared radiation source, 6... Susceptor, 7 .7', 7"・
...Power supply with controller, 8,9...Each upper and lower infrared radiation source, 10.10'...Metal shutter, 11,1
1'...Quartz wall shutter, 12.12'...Reflecting wall, 13...Tungsten filament, 14...Quartz tube, 15...Infrared lamp electrode.

Claims

[Scope of utility model registration request]

(1) A top plate and a bottom plate that house a semiconductor substrate therein and are made of an infrared transparent material, a pair of shutters with reflecting mirrors for loading and unloading the semiconductor substrate on opposite side surfaces, and a pair of reflecting mirrors that are perpendicular to these sides. A box surrounded by a wall, and a plurality of rod-shaped infrared lamps disposed outside the box in close proximity to the top plate and the bottom plate, and arranged in a distributed manner so that the directions of arrangement are orthogonal to each other on the top plate side and the bottom plate side. and each group of infrared heat sources made up of their respective reflectors, and a power supply unit capable of supplying arbitrary power to each predetermined group of these rod-shaped infrared lamps. Infrared heat treatment equipment.

(2) The semiconductor substrate according to claim 1, which is a utility model registration, characterized in that a plurality of inert gas ejection holes are provided to eject the semiconductor substrate inside the semiconductor substrate storage box from the lower part thereof and float and rotate the semiconductor substrate. Infrared heat treatment equipment.