JPS61196535A - Semiconductor manufacturing device - Google Patents

Semiconductor manufacturing device

Info

Publication number
JPS61196535A
JPS61196535A JP3708185A JP3708185A JPS61196535A JP S61196535 A JPS61196535 A JP S61196535A JP 3708185 A JP3708185 A JP 3708185A JP 3708185 A JP3708185 A JP 3708185A JP S61196535 A JPS61196535 A JP S61196535A
Authority
JP
Japan
Prior art keywords
wafer
cup
developer
turned
semiconductor manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3708185A
Other languages
Japanese (ja)
Inventor
Kenji Takayama
健司 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3708185A priority Critical patent/JPS61196535A/en
Publication of JPS61196535A publication Critical patent/JPS61196535A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable to produce a wafer with high precision in pattern and dimension by a method wherein the wafer is developed while it is immersed to be turned in a cup containing positive developer. CONSTITUTION:A developing cup 12 is lowered by a cup cylinder 2 while a wafer 6 is carried on a wafer chuck 6 to be vacuum-attracted. Then the cup 12 is lifted simultaneously closing electromagnetic valves 13 and the wafer 6 is turned at low speed. Next a developing nozzle 8 is turned ON to feed the wafer surface 6 with developer up to the level of around 1 cm. The low speed turning operation of wafer 6 is continued for specified time and then the electromagnetic valves 13 are opened simultaneously turning a rinse nozzle 9 ON for rinsing operation. after finishing the rinsing operation, the revolution of spin motor 1 is accelerated to dry up the wafer 6. Through these procedures, the precision in pattern and dimension may be improved while making the pattern finer as well as the wafer diameter large since the wafer to be processed may be developed while it is immersed to be turned.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体製造装置に関し、特にそのポジ現像
処理時の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and particularly to improvements in positive development processing thereof.

〔従来の技術〕[Conventional technology]

従来この種の装置として第２図に示すものかあった。 A conventional device of this type is shown in FIG.

図において、１はウェハ６を回転させるためのスピンモ
ータ、４は現像カップ、３は現像カップ４を支持する支
持台、２は現像カップ４を上下させるためのカップシリ
ンダ、５はウェハ６を載置するウェハチャック、６はウ
ェハチャック５に真空系により吸着されている処理ウェ
ハ、７は現像のため供給されたポジ現像液であり、これ
はウェハ面の表面張力により保持されている。８はウェ
ハ面上に現像液を供給するためのノズル、９は現像後の
リンスのためのリンス液を供給するためのノズル、１０
は処理廃液のタンクである。In the figure, 1 is a spin motor for rotating the wafer 6, 4 is a developing cup, 3 is a support stand that supports the developing cup 4, 2 is a cup cylinder for raising and lowering the developing cup 4, and 5 is a cup cylinder on which the wafer 6 is placed. A wafer chuck 6 is placed on the wafer chuck, a processing wafer 6 is attracted by a vacuum system to the wafer chuck 5, and a positive developer 7 is supplied for development, which is held by the surface tension of the wafer surface. 8 is a nozzle for supplying a developing solution onto the wafer surface; 9 is a nozzle for supplying a rinsing solution for rinsing after development; 10
is a tank for processing waste liquid.

又、第２図（′ｂ）は現像ノズル８からウェハ６上へ現
像液を供給する時の拡がりの様子を矢印１１で示したも
のである。Further, FIG. 2('b) shows how the developer spreads when it is supplied from the developing nozzle 8 onto the wafer 6 by arrows 11.

次にこの装置によるウェハの現像工程の各工程を列挙す
る。Next, each step of the wafer development process using this apparatus will be listed.

（１）カップシリンダ２によりカップ４を下げる。(1) Lower the cup 4 using the cup cylinder 2.

（２）ウェハチャック５上にウェハ６を搬送する。(2) Transfer the wafer 6 onto the wafer chuck 5.

（ここでは搬送システムは図示を省略している。）（３
）ウェハチャック５上にウェハ６を搬送後、該ウェハ６
を真空吸着する。(The transport system is not shown here.) (3
) After the wafer 6 is transferred onto the wafer chuck 5, the wafer 6 is
Vacuum adsorption.

（４）カップシリンダ２によりカップ４を上げる。(4) Raise the cup 4 using the cup cylinder 2.

（５）スピンモータ１によりウェハ６を低速回転（５０
〜１００　ｒｐｍ　）させる。(5) The wafer 6 is rotated at low speed by the spin motor 1 (50
~100 rpm).

（６）現像ノズル８をオンし現像液をウェハ６上に供給
する。(6) Turn on the developing nozzle 8 and supply the developing solution onto the wafer 6.

（７）現像液７を第２図（ａ）のように表面張力により
保持できる程度供給し、その後現像液の供給を停止し、
同時にスピンモータ１を停止する。(7) Supply the developer 7 to the extent that it can be held by surface tension as shown in FIG. 2(a), then stop supplying the developer,
At the same time, the spin motor 1 is stopped.

（８）規定の時間、静止させる。(8) Let it stand still for a specified period of time.

（９）静止後スピンモータ１を回転（５００〜１１００
０ｒｐ　）させ、同時にリンスノズル９をオンしてリン
ス液（水）を出し、ウェハ６のリンスを行なう。(9) Rotate the spin motor 1 after stopping (500 to 1100
0 rpm), and at the same time, the rinse nozzle 9 is turned on to dispense a rinse liquid (water) to rinse the wafer 6.

（１０）リンス終了後リンスノズル９をオフし同時にス
ピンモータ１の回転数を上げ（３０００〜５０００ｒｐ
ｍ　）　、ウェハ６を乾燥させる。(10) After rinsing, turn off the rinse nozzle 9 and increase the rotation speed of the spin motor 1 (3000 to 5000 rpm).
m), dry the wafer 6;

（１１）その後カップ４をシリンダ２により下！７．［
送システムによりウェハ６を搬送し、次のウェハの処理
を行なうゆ 〔発明が解決しようとする問題点〕 従来の半導体製造装置によるウェハの現像は以上のよう
な方法で行なわれていた。そのため、ポジ現像液の量は
ウェハ面上で表面張力により保持されるものだけとなり
、この量だけではパターンの微細化、ウェハの大口径化
に対して十分なパターン精度及び寸法精度を保持するこ
とが非常に困難であるという欠点があった。(11) Then lower cup 4 with cylinder 2! 7. [
The wafer 6 is transported by the transport system, and the next wafer is processed. [Problems to be Solved by the Invention] Wafer development using conventional semiconductor manufacturing equipment has been performed in the manner described above. Therefore, the amount of positive developer is limited to that which is held on the wafer surface by surface tension, and this amount alone is insufficient to maintain sufficient pattern accuracy and dimensional accuracy for finer patterns and larger diameter wafers. The disadvantage was that it was extremely difficult.

この発明は上記のような従来のものの欠点を除去するた
めになされたもので、パターン精度及び寸法精度を大幅
に改善することのできる半導体製造装置を提供すること
を目的としている。The present invention was made to eliminate the above-mentioned drawbacks of the conventional method, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can significantly improve pattern accuracy and dimensional accuracy.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体製造装置は、ウェハを浸漬させる
ための現像液を収容する現像液槽と、ウェハを載置する
載置台を回転させろウェハ回転駆動手段とを設けたもの
である。A semiconductor manufacturing apparatus according to the present invention is provided with a developer tank containing a developer for immersing a wafer, and a wafer rotation driving means for rotating a mounting table on which the wafer is placed.

〔作用〕[Effect]

この発明においては、ウェハは現像液に浸漬された状態
で回転するから、パターン精度２寸法精度の高いウェハ
を得ることができる。In this invention, since the wafer is rotated while immersed in the developer, a wafer with high pattern accuracy in two dimensions can be obtained.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第１図において、１２はウェハ６を浸漬させるための現
像液７を収容する現像液槽である現像用カップ、１６は
該カップ１２と廃液タンク１０とを接続するためのパイ
プ、１３は該パイプ１６に設けられた電磁弁↑あり、こ
れは現像液の充瞑及び廃水のタイミングを図るためのも
のである。１４はカップ１２内の現像液７を速く廃液で
きるよう廃液タンク１０の内圧を下げるための排気ダク
ト、１５はカップ１２とウェハチャックシャフト５ａと
の間を隙間なくシールするための真空シールである。他
は従来例と同様である。そして以上の１３．１４．１５
．１６によりカップ１２への現像液の供給、排出を自動
的に制御するための現像液供給排出制御手段を構成して
いる。In FIG. 1, reference numeral 12 denotes a developing cup which is a developer tank containing a developer 7 for immersing the wafer 6, 16 a pipe for connecting the cup 12 and the waste liquid tank 10, and 13 the pipe. There is a solenoid valve ↑ installed at 16, which is used to control the timing of charging the developer and draining water. 14 is an exhaust duct for lowering the internal pressure of the waste liquid tank 10 so that the developer 7 in the cup 12 can be quickly drained, and 15 is a vacuum seal for sealing the gap between the cup 12 and the wafer chuck shaft 5a. The rest is the same as the conventional example. And above 13.14.15
．． 16 constitutes a developer supply and discharge control means for automatically controlling the supply and discharge of the developer to the cup 12.

次に本装置によるウェハの現像工程の各工程を列挙する
。Next, each step of the wafer development process using this apparatus will be listed.

（１）カップシリンダ２により現像用カップ（以下カッ
プと称す）１２を下げる。この時電磁弁１３は開いたま
まである。(1) Lower the developing cup (hereinafter referred to as cup) 12 using the cup cylinder 2. At this time, the solenoid valve 13 remains open.

（２）ウェハチャック５上にウェハ６を搬送する。(2) Transfer the wafer 6 onto the wafer chuck 5.

（３）ウェハチャック５上にウェハ６を搬送後、該ウェ
ハ６を真空吸着する。(3) After the wafer 6 is transferred onto the wafer chuck 5, the wafer 6 is vacuum-adsorbed.

（４）カップシリンダ２によりカップ１２を上げ、同時
に電磁弁１３を閉じる。(4) Raise the cup 12 using the cup cylinder 2 and close the solenoid valve 13 at the same time.

（５）スピンモータ１によりウェハ６を低速回転（５０
〜１００　ｒｐｍ　）させる。(5) The wafer 6 is rotated at low speed by the spin motor 1 (50
~100 rpm).

（６）現像ノズル８をオンし現像液をウェハ６上に現像
液がウェハ面上１ｃｍぐらいの高さになるまで供給する
。(6) Turn on the developing nozzle 8 and supply the developer onto the wafer 6 until the developer reaches a height of about 1 cm above the wafer surface.

（７）規定の時間、ウェハ６の低速回転を続行する。（
なおこれはここでは低速回転させたが、これに限る必要
はない。） （８）その後電磁弁１３を開け、同時にリンスノズル９
をオンしてリンス液（水）を出し、ウェハ６のリンスを
行なう。(7) Continue to rotate the wafer 6 at low speed for a specified period of time. (
Note that although this is done here, the rotation speed is low, but there is no need to limit it to this. ) (8) After that, open the solenoid valve 13, and at the same time open the rinse nozzle 9.
Turn on the rinsing liquid (water) and rinse the wafer 6.

（９）リンス終了後リンスノズル９をオフし同時にスピ
ンモータｌの回転数を上げ（３０００〜５０００　ｒｐ
ｍ）　、ウェハ６を乾燥させる。(9) After rinsing, turn off the rinse nozzle 9 and increase the rotation speed of the spin motor l (3000 to 5000 rp).
m) Dry the wafer 6.

（１０）その後カップ１２をシリンダ２により下げ、搬
送システムによりウェハ６を搬送し、次のウェハの処理
を行なう。(10) After that, the cup 12 is lowered by the cylinder 2, the wafer 6 is transported by the transport system, and the next wafer is processed.

このように本実施例装置では、カップ内に現像液をため
、その中に処理ウェハを浸漬し同時に処理ウェハを回転
させながら現像するようにしたの果がある。As described above, in the apparatus of this embodiment, the developer is stored in the cup, the processing wafer is immersed therein, and the processing wafer is simultaneously rotated and developed.

なお、上記実施例ではウェハ搬送のためカップを上下さ
せたが、ウェハチャックを上下させてもよい。In the above embodiment, the cup is moved up and down to transport the wafer, but the wafer chuck may be moved up and down.

また、上記実施例ではウェハをウェハチャック上に載置
しながら現像液中に浸漬する場合を示したが、ウェハチ
ャックを用いずにウェハをその上面よりハンドラーでつ
かみ、これを現像液中に浸漬するようにしてもよく、上
記と同様の効果を奏する。In addition, in the above embodiment, the wafer is placed on a wafer chuck and immersed in the developer solution, but the wafer is grabbed from the upper surface by the handler without using the wafer chuck, and is immersed in the developer solution. Alternatively, the same effect as above can be achieved.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明に係る半導体製造装置によれば
、ポジ現像液を収容したカップにウェハを浸漬して該ウ
ェハを回転させて現像するようにしたので、パターン精
度及び寸法精度の高いウェハが得られる効果がある。As described above, according to the semiconductor manufacturing apparatus according to the present invention, since the wafer is immersed in a cup containing a positive developer and developed by rotating the wafer, a wafer with high pattern accuracy and dimensional accuracy can be produced. There is an effect that can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の一実施例による半導体製造装置を示
す断面図、第２図（ａｌは従来の半導体製造装置を示す
断面図、第２図山）は現像ノズルからウェハ上への現像
液を供給する時の拡がりの様子を示す状態図である。 １・・・スピンモータ（ウェハ回転駆動手段）、５・・
・ウェハチャック、６・・・ウェハ、７・・・現像液、
１２・・・現像用カップ、１３・・・電磁弁、１４・・
・排気ダクト、１５・・・真空シール、１６・・・パイ
プ。 なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 (al is a cross-sectional view showing a conventional semiconductor manufacturing apparatus; the crest in FIG. 2) is a flow of developer from a developing nozzle onto a wafer. FIG. 1... Spin motor (wafer rotation drive means), 5...
・Wafer chuck, 6... wafer, 7... developer,
12...Developing cup, 13...Solenoid valve, 14...
・Exhaust duct, 15... Vacuum seal, 16... Pipe. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

【特許請求の範囲】[Claims] （１）露光処理したポジレジスト塗布ウェハを現像する
半導体製造装置において、ウェハを浸漬させるための現
像液を収容する現像液槽と、上記ウェハを載置する載置
台を回転させるウェハ回転駆動手段とを備えたことを特
徴とする半導体製造装置。(1) A semiconductor manufacturing apparatus that develops a positive resist-coated wafer that has been exposed to light, including a developer tank containing a developer for immersing the wafer, and a wafer rotation drive means for rotating a mounting table on which the wafer is placed. A semiconductor manufacturing device characterized by comprising: （２）上記現像液槽は、該現像液槽への上記現像液の供
給、排出を自動的に制御するための現像液供給排出制御
手段を備えていることを特徴とする特許請求の範囲第１
項記載の半導体製造装置。(2) The developer tank is provided with a developer supply and discharge control means for automatically controlling the supply and discharge of the developer to the developer tank. 1
Semiconductor manufacturing equipment as described in .
JP3708185A 1985-02-26 1985-02-26 Semiconductor manufacturing device Pending JPS61196535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3708185A JPS61196535A (en) 1985-02-26 1985-02-26 Semiconductor manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3708185A JPS61196535A (en) 1985-02-26 1985-02-26 Semiconductor manufacturing device

Publications (1)

Publication Number Publication Date
JPS61196535A true JPS61196535A (en) 1986-08-30

Family

ID=12487598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3708185A Pending JPS61196535A (en) 1985-02-26 1985-02-26 Semiconductor manufacturing device

Country Status (1)

Country Link
JP (1) JPS61196535A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655047A (en) * 1979-10-11 1981-05-15 Matsushita Electric Ind Co Ltd Developing method and device therefor
JPS5745232A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Device and method for developing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655047A (en) * 1979-10-11 1981-05-15 Matsushita Electric Ind Co Ltd Developing method and device therefor
JPS5745232A (en) * 1980-08-29 1982-03-15 Matsushita Electric Ind Co Ltd Device and method for developing

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