JPS61194178A - 化学気相成長装置 - Google Patents
化学気相成長装置Info
- Publication number
- JPS61194178A JPS61194178A JP3288485A JP3288485A JPS61194178A JP S61194178 A JPS61194178 A JP S61194178A JP 3288485 A JP3288485 A JP 3288485A JP 3288485 A JP3288485 A JP 3288485A JP S61194178 A JPS61194178 A JP S61194178A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- quartz plate
- substrate
- introduction pipe
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010453 quartz Substances 0.000 claims abstract description 47
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 abstract description 80
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 45
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 229910000077 silane Inorganic materials 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 239000012159 carrier gas Substances 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3288485A JPS61194178A (ja) | 1985-02-22 | 1985-02-22 | 化学気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3288485A JPS61194178A (ja) | 1985-02-22 | 1985-02-22 | 化学気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194178A true JPS61194178A (ja) | 1986-08-28 |
| JPS6324069B2 JPS6324069B2 (enExample) | 1988-05-19 |
Family
ID=12371297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3288485A Granted JPS61194178A (ja) | 1985-02-22 | 1985-02-22 | 化学気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194178A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01176294A (ja) * | 1987-12-29 | 1989-07-12 | Nec Corp | 気相成長装置 |
| US7999210B2 (en) * | 2002-02-27 | 2011-08-16 | Sumitomo Electric Industries, Ltd. | Heating device for manufacturing semiconductor |
-
1985
- 1985-02-22 JP JP3288485A patent/JPS61194178A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01176294A (ja) * | 1987-12-29 | 1989-07-12 | Nec Corp | 気相成長装置 |
| US7999210B2 (en) * | 2002-02-27 | 2011-08-16 | Sumitomo Electric Industries, Ltd. | Heating device for manufacturing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6324069B2 (enExample) | 1988-05-19 |
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