JPS61186280A - 多元半導体単結晶の育成方法 - Google Patents

多元半導体単結晶の育成方法

Info

Publication number
JPS61186280A
JPS61186280A JP2547285A JP2547285A JPS61186280A JP S61186280 A JPS61186280 A JP S61186280A JP 2547285 A JP2547285 A JP 2547285A JP 2547285 A JP2547285 A JP 2547285A JP S61186280 A JPS61186280 A JP S61186280A
Authority
JP
Japan
Prior art keywords
crystal
solvent
ampoule
seed
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2547285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132200B2 (enrdf_load_stackoverflow
Inventor
Yoshio Fujino
芳男 藤野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2547285A priority Critical patent/JPS61186280A/ja
Publication of JPS61186280A publication Critical patent/JPS61186280A/ja
Publication of JPH0132200B2 publication Critical patent/JPH0132200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2547285A 1985-02-13 1985-02-13 多元半導体単結晶の育成方法 Granted JPS61186280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2547285A JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2547285A JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS61186280A true JPS61186280A (ja) 1986-08-19
JPH0132200B2 JPH0132200B2 (enrdf_load_stackoverflow) 1989-06-29

Family

ID=12166978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2547285A Granted JPS61186280A (ja) 1985-02-13 1985-02-13 多元半導体単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS61186280A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332899A (en) * 1976-09-08 1978-03-28 Hitachi Ltd Production of ferrite single crystal
JPS5752573U (enrdf_load_stackoverflow) * 1980-09-12 1982-03-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332899A (en) * 1976-09-08 1978-03-28 Hitachi Ltd Production of ferrite single crystal
JPS5752573U (enrdf_load_stackoverflow) * 1980-09-12 1982-03-26

Also Published As

Publication number Publication date
JPH0132200B2 (enrdf_load_stackoverflow) 1989-06-29

Similar Documents

Publication Publication Date Title
JPS6355190A (ja) 半導体製造に際して使用するための溶融石英部材
US4904336A (en) Method of manufacturing a single crystal of compound semiconductor and apparatus for the same
US3507625A (en) Apparatus for producing binary crystalline compounds
US4957712A (en) Apparatus for manufacturing single silicon crystal
EP0765406B1 (en) Improvements in crystal growth
JPS61186280A (ja) 多元半導体単結晶の育成方法
US3261722A (en) Process for preparing semiconductor ingots within a depression
JP2861240B2 (ja) 単結晶成長用るつぼ
US4708763A (en) Method of manufacturing bismuth germanate crystals
EP0355833B1 (en) Method of producing compound semiconductor single crystal
US4613495A (en) Growth of single crystal Cadmium-Indium-Telluride
US4234376A (en) Growth of single crystal beryllium oxide
JP2000313690A (ja) 半導体単結晶の製造方法およびこれに用いられる固体の半導体原料塊
JP3021935B2 (ja) カドミウムマンガンテルル単結晶の製造方法
JPH0948697A (ja) リチウムトリボレート単結晶の製造方法
Zboiński Zone growth: A simple procedure for growing organic crystals from the melt of from the vapour phase
Orem Growth of Preferentially Oriented Aluminum Sing Ie Crystals
JPH085760B2 (ja) Hgl―xo Cdxo Te結晶インゴットの製造方法
JPS60195082A (ja) 半導体結晶の製造装置
JPH06345583A (ja) 単結晶製造方法及び単結晶製造装置
JPH0450188A (ja) 単結晶の製造方法および製造装置
JP2641387B2 (ja) 化合物半導体の結晶成長方法及び結晶成長装置
JP2023064374A (ja) 単結晶育成装置
RU1228526C (ru) Способ выращивани монокристаллов сложных оксидов из расплава и устройство дл его осуществлени
JPS6012318B2 (ja) 単結晶引上げ方法及びその装置