JPS61186233U - - Google Patents

Info

Publication number
JPS61186233U
JPS61186233U JP7023185U JP7023185U JPS61186233U JP S61186233 U JPS61186233 U JP S61186233U JP 7023185 U JP7023185 U JP 7023185U JP 7023185 U JP7023185 U JP 7023185U JP S61186233 U JPS61186233 U JP S61186233U
Authority
JP
Japan
Prior art keywords
slider
holds
holding tank
growth
bathtub part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7023185U
Other languages
Japanese (ja)
Other versions
JPH0517878Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985070231U priority Critical patent/JPH0517878Y2/ja
Publication of JPS61186233U publication Critical patent/JPS61186233U/ja
Application granted granted Critical
Publication of JPH0517878Y2 publication Critical patent/JPH0517878Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例による縦断面図、第
2図は、本考案の一実施例に用いる本体底部の拡
大断面図である。第3図は従来の液相成長治具の
横断面図である。 1……本体部、2……スライダー、3……浴槽
部、4……本体部の底部、5,5′……溶液、6
……半導体基板、7……貫通穴、8……廃液。
FIG. 1 is a longitudinal cross-sectional view of an embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view of the bottom of the main body used in the embodiment of the present invention. FIG. 3 is a cross-sectional view of a conventional liquid phase growth jig. 1... Body part, 2... Slider, 3... Bathtub part, 4... Bottom of main body part, 5, 5'... Solution, 6
...Semiconductor substrate, 7...Through hole, 8...Waste liquid.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体エピタキシヤル成長に必要な溶液を保持
する浴槽部と、該浴槽部の底面を成長基板を載置
して摺動するスライダーと、これら浴槽部とスラ
イダーとを保持、固定し、底部に成長終了後の溶
液の保持槽を有する本体部とを有し、該保持槽の
底面に同一方向に複数条の小溝を有することを特
徴とする半導体液相成長治具。
A bathtub part that holds a solution necessary for semiconductor epitaxial growth, a slider that slides a growth substrate on the bottom of the bathtub part, and a slider that holds and fixes the bathtub part and the slider, and the growth substrate is placed on the bottom part 1. A semiconductor liquid phase growth jig, comprising: a main body having a holding tank for a subsequent solution; and a plurality of small grooves extending in the same direction on the bottom surface of the holding tank.
JP1985070231U 1985-05-13 1985-05-13 Expired - Lifetime JPH0517878Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985070231U JPH0517878Y2 (en) 1985-05-13 1985-05-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985070231U JPH0517878Y2 (en) 1985-05-13 1985-05-13

Publications (2)

Publication Number Publication Date
JPS61186233U true JPS61186233U (en) 1986-11-20
JPH0517878Y2 JPH0517878Y2 (en) 1993-05-13

Family

ID=30606641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985070231U Expired - Lifetime JPH0517878Y2 (en) 1985-05-13 1985-05-13

Country Status (1)

Country Link
JP (1) JPH0517878Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120600A (en) * 1981-12-31 1983-07-18 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Epitaxial growth method of 2-5 family compound semiconductor
JPS58138330U (en) * 1982-03-11 1983-09-17 日本電気株式会社 Liquid phase epitaxial growth equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120600A (en) * 1981-12-31 1983-07-18 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Epitaxial growth method of 2-5 family compound semiconductor
JPS58138330U (en) * 1982-03-11 1983-09-17 日本電気株式会社 Liquid phase epitaxial growth equipment

Also Published As

Publication number Publication date
JPH0517878Y2 (en) 1993-05-13

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