JPS61183196A - 化合物半導体単結晶の製造方法 - Google Patents
化合物半導体単結晶の製造方法Info
- Publication number
- JPS61183196A JPS61183196A JP2146485A JP2146485A JPS61183196A JP S61183196 A JPS61183196 A JP S61183196A JP 2146485 A JP2146485 A JP 2146485A JP 2146485 A JP2146485 A JP 2146485A JP S61183196 A JPS61183196 A JP S61183196A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- melt
- liquid capsule
- crucible
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 33
- 150000001875 compounds Chemical class 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 claims description 72
- 239000002775 capsule Substances 0.000 claims description 64
- 239000002994 raw material Substances 0.000 claims description 59
- 238000005192 partition Methods 0.000 claims description 33
- 239000000155 melt Substances 0.000 claims description 26
- 239000007787 solid Substances 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 238000010494 dissociation reaction Methods 0.000 claims description 7
- 230000005593 dissociations Effects 0.000 claims description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 16
- 239000012535 impurity Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000565 sealant Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 235000021110 pickles Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146485A JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146485A JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183196A true JPS61183196A (ja) | 1986-08-15 |
| JPH0559878B2 JPH0559878B2 (https=) | 1993-09-01 |
Family
ID=12055701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2146485A Granted JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183196A (https=) |
-
1985
- 1985-02-06 JP JP2146485A patent/JPS61183196A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0559878B2 (https=) | 1993-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5131975A (en) | Controlled growth of semiconductor crystals | |
| JPH0525836B2 (https=) | ||
| US4946542A (en) | Crystal growth method in crucible with step portion | |
| US4923561A (en) | Crystal growth method | |
| JPS61183196A (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0314800B2 (https=) | ||
| JPH034517B2 (https=) | ||
| JP2529934B2 (ja) | 単結晶の製造方法 | |
| JPS63195188A (ja) | 化合物半導体単結晶の製造方法および製造装置 | |
| JP3216298B2 (ja) | 化合物半導体結晶成長用縦型容器 | |
| JPH0561239B2 (https=) | ||
| JP2861240B2 (ja) | 単結晶成長用るつぼ | |
| WO2003068696A1 (en) | Production method for compound semiconductor single crystal | |
| JPS63144194A (ja) | 化合物半導体単結晶の製造方法と装置 | |
| JPH08151299A (ja) | 化合物半導体の合成方法と単結晶成長方法及び化合物半導体の合成装置と単結晶成長装置 | |
| JPS5812228B2 (ja) | 結晶育成装置と結晶成長方法 | |
| JPH09208360A (ja) | 単結晶の成長方法 | |
| JP2834558B2 (ja) | 化合物半導体単結晶の成長方法 | |
| JP2876765B2 (ja) | 単結晶の成長方法および成長装置 | |
| JPH0699233B2 (ja) | 単結晶の製造方法 | |
| JPS6325291A (ja) | 単結晶の製造方法 | |
| JPS6090895A (ja) | 揮発性を有する化合物半導体単結晶育成方法 | |
| JPH0243718B2 (https=) | ||
| JPS63303893A (ja) | シリコン単結晶育成方法及び装置 | |
| JPH03271186A (ja) | 単結晶の引上方法および引上装置 |