JPH0559878B2 - - Google Patents
Info
- Publication number
- JPH0559878B2 JPH0559878B2 JP2146485A JP2146485A JPH0559878B2 JP H0559878 B2 JPH0559878 B2 JP H0559878B2 JP 2146485 A JP2146485 A JP 2146485A JP 2146485 A JP2146485 A JP 2146485A JP H0559878 B2 JPH0559878 B2 JP H0559878B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- melt
- crucible
- liquid capsule
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 claims description 73
- 239000002775 capsule Substances 0.000 claims description 63
- 239000002994 raw material Substances 0.000 claims description 60
- 239000013078 crystal Substances 0.000 claims description 39
- 238000005192 partition Methods 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000000155 melt Substances 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000010494 dissociation reaction Methods 0.000 claims description 6
- 230000005593 dissociations Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 32
- 239000012535 impurity Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000565 sealant Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146485A JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2146485A JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183196A JPS61183196A (ja) | 1986-08-15 |
| JPH0559878B2 true JPH0559878B2 (https=) | 1993-09-01 |
Family
ID=12055701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2146485A Granted JPS61183196A (ja) | 1985-02-06 | 1985-02-06 | 化合物半導体単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183196A (https=) |
-
1985
- 1985-02-06 JP JP2146485A patent/JPS61183196A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183196A (ja) | 1986-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW314641B (https=) | ||
| JPH0525836B2 (https=) | ||
| US4946542A (en) | Crystal growth method in crucible with step portion | |
| US5256381A (en) | Apparatus for growing single crystals of III-V compound semiconductors | |
| JPH0559878B2 (https=) | ||
| JP2529934B2 (ja) | 単結晶の製造方法 | |
| JPH0314800B2 (https=) | ||
| JPH0561239B2 (https=) | ||
| JP2861240B2 (ja) | 単結晶成長用るつぼ | |
| JPH0699233B2 (ja) | 単結晶の製造方法 | |
| JP3569954B2 (ja) | 半導体結晶の成長方法 | |
| JP2758038B2 (ja) | 単結晶製造装置 | |
| WO2003068696A1 (en) | Production method for compound semiconductor single crystal | |
| JPS6325291A (ja) | 単結晶の製造方法 | |
| JPS63144194A (ja) | 化合物半導体単結晶の製造方法と装置 | |
| JPH09208360A (ja) | 単結晶の成長方法 | |
| JP3042168B2 (ja) | 単結晶製造装置 | |
| JPH08151299A (ja) | 化合物半導体の合成方法と単結晶成長方法及び化合物半導体の合成装置と単結晶成長装置 | |
| JPS6090895A (ja) | 揮発性を有する化合物半導体単結晶育成方法 | |
| JPH02172888A (ja) | シリコン単結晶引き上げ用るつぼ | |
| JPS6251237B2 (https=) | ||
| JPH0492887A (ja) | 高解離圧化合物半導体単結晶成長法 | |
| JPS6395194A (ja) | 化合物単結晶製造方法 | |
| JPH0764671B2 (ja) | 化合物半導体単結晶育成方法 | |
| JPS62197397A (ja) | 単結晶の製造法 |