JPS6118139A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6118139A
JPS6118139A JP59138514A JP13851484A JPS6118139A JP S6118139 A JPS6118139 A JP S6118139A JP 59138514 A JP59138514 A JP 59138514A JP 13851484 A JP13851484 A JP 13851484A JP S6118139 A JPS6118139 A JP S6118139A
Authority
JP
Japan
Prior art keywords
silver
bonding
ball
wire
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59138514A
Other languages
Japanese (ja)
Inventor
Atsushi Kamijo
敦 上條
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59138514A priority Critical patent/JPS6118139A/en
Publication of JPS6118139A publication Critical patent/JPS6118139A/en
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/45139—Silver (Ag) as principal constituent
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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Abstract

PURPOSE:To enhance bonding strength of silver ball and aluminum pad junction and realize silver wire bonding with high reliability by giving vibration to a silver ball when a silver ball is thermally bonded. CONSTITUTION:A vibrator 10 is attached to an arm 9 which supports a capillary 8 to which a silver wire 7 is inserted and vibration of this vibrator is transmitted to the silver ball during thermal bonding through the capillary. When heated temperature during bonding is 320 deg.C and a load during bonding is 90g, junction strength between silver ball 1 and aluminum 2 is enhanced and it is also proved that the frequency range where crack is not generated within a silicon chip 4 lie in 50Hz-10Hz.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置の製造方法に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a method of manufacturing a semiconductor device.

（従来技術とその問題点） トランジスタ、ＩＣなどの半導体素子上の内部電極（ア
ルミニウムパッド）と外部リードとの結線は主に金ワイ
ヤを用いるネイルヘッドボンディング、あるいはアルミ
ニウムワイヤを用いる超音波ボンディングにより行なわ
わ５ている。前者は、水素炎（水素トーチ）あるいは放
電（電気トーチ）により、金ワイヤの先端部を溶融しボ
ールを形成（ボールア、ブ）した後、熱圧着により結線
する方法である。この方法は汎用性が大きく高速ボンデ
ィングが可能であるという特長をもつものの。(Prior art and its problems) Connections between internal electrodes (aluminum pads) on semiconductor elements such as transistors and ICs and external leads are mainly performed by nail head bonding using gold wire or ultrasonic bonding using aluminum wire. I'm here. The former is a method in which the tip of a gold wire is melted using a hydrogen flame (hydrogen torch) or electric discharge (electric torch) to form a ball (ball a, b), and then the wires are connected by thermocompression bonding. Although this method has the advantage of being highly versatile and capable of high-speed bonding.

アルミニウムと金の接合のため、接合部に金属間化合物
が成長してパープル・プレーグと呼ばれる故障が起こる
ことがあり、信頼性が低い。一方。Because it is a bond between aluminum and gold, intermetallic compounds can grow in the joint, resulting in a failure called purple plague, making it unreliable. on the other hand.

後者はアルミニウムワイヤを超音波（通常５Ｑ　ＩＧ（
ｚ程度の周波数を用いる６）をかけてつぶし結線する方
法で、ネイルヘッドボンディングのように熱を加える必
要がなく常温で結線でき、また、アルミニウムーアルミ
ニウムの接合であるために信頼性が高い、しかし結線に
際しては、方向性があるために高速化が困難であること
、さらにアルミニウムワイヤの引張り強度がそもそも小
さいためにワイヤ断線が多く、ワイヤ自体のマストは安
いが製造コストが高くつくという欠点を有している。The latter uses aluminum wire with ultrasonic waves (usually 5Q IG (
This method uses a frequency of around 6) and connects the wire by squeezing it. Unlike nail head bonding, it is not necessary to apply heat and the wire can be connected at room temperature. Also, since it is an aluminum-aluminum bond, it is highly reliable. However, when connecting wires, it is difficult to increase the speed due to the directionality, and the tensile strength of aluminum wire is low to begin with, so there are many wire breaks, and although the mast of the wire itself is cheap, manufacturing costs are high. have.

以上のことからネイルヘッドボンディングは民生用、超
音波ボンディングは通信用の高信頼性の半導体装置の製
造に用いられている。For the above reasons, nail head bonding is used for consumer products, and ultrasonic bonding is used for manufacturing highly reliable semiconductor devices for communications.

近年、ネイルヘッドボンディングの高信頼化のために、
１００〜１５０℃の温度下で、超音波を印加し、熱圧着
を行なうという方法がとられている。In recent years, in order to improve the reliability of nail head bonding,
A method is used in which thermocompression bonding is performed by applying ultrasonic waves at a temperature of 100 to 150°C.

超音波を併用しなければ３００℃程度の熱が必要である
から、この超音波ネイルヘッドボンディングは、接合部
での金−アルミニウム金属間化合物の成長を押えること
ができ、半導体装置の高信頼化につながる。また、ボー
ルを圧着するボブディング方法ゆえ、ボンディングに方
向性がなく、高速性を犠牲にする必要がないという特長
を持っている。Since heat of approximately 300°C is required if ultrasonic waves are not used, this ultrasonic nail head bonding can suppress the growth of gold-aluminum intermetallic compounds at the joint, making semiconductor devices highly reliable. Leads to. Additionally, because of the bobbing method in which the ball is crimped, there is no directionality in bonding, and there is no need to sacrifice high speed.

さて、半導体素子の製造技術の進歩や半導体装置の組立
装置の自動化などにより、半導体装置の製造コストはま
すます安くなるのに対し、高価な金を用いるがゆえに半
導体装置の原価に占める金ワイヤの割合は増大し、原価
を圧迫するようζこなった。この傾向は、半導体素子自
体の付加価値の小さなトランジスタなどの個別半導体に
おいて顕著であり１代替ワイヤの開発が要求されている
。Now, with the advancement of semiconductor device manufacturing technology and the automation of semiconductor device assembly equipment, the manufacturing cost of semiconductor devices is becoming cheaper and cheaper. However, because expensive gold is used, gold wire accounts for less of the cost of semiconductor devices. The ratio has increased, putting pressure on cost prices. This tendency is remarkable in individual semiconductors such as transistors where the added value of the semiconductor element itself is small, and there is a demand for the development of an alternative wire.

電気伝導度の大きさ、ボンディングワイヤとしての引張
り強度、あるいはボールの圧着に重要となる塑性変形の
しやすさ、ボンディングワイヤへの伸線のしやすさなど
を考えると銀ワイヤは金ワイヤの代替となりつる。事実
１本発明者らの発明による特願昭５８−０９５１６５に
よれば、銀ワイヤを半導体素子上の内部電極と外部リー
ドの結線に用いることができる。すなわち、釧ワイヤと
放を電極間に放゛屯を生じさせ、該銀ワイヤの先端部に
ボールを形成した後、この銀ワイヤを用いてボンディン
グを行なう方法において、上記銀ワイヤと放′？を電極
を、該銀ワイヤと放電電極を結ぶ方向で。Considering its electrical conductivity, tensile strength as a bonding wire, ease of plastic deformation which is important for crimping balls, and ease of drawing into bonding wires, silver wire is an alternative to gold wire. Next door. Fact 1 According to Japanese Patent Application No. 58-095165 invented by the present inventors, silver wire can be used to connect internal electrodes and external leads on a semiconductor element. That is, in a method in which a ball is created between the silver wire and the electrode, a ball is formed at the tip of the silver wire, and then bonding is performed using the silver wire. the electrode in the direction that connects the silver wire and the discharge electrode.

かつ放電電極から銀ワイヤの向きに流れる保護雰囲気ガ
ス、具体的には、１００碧以下の酸素濃度をもつ窒素あ
るいは不活性ガスの気流中に配置し。It is placed in a protective atmosphere gas flowing from the discharge electrode in the direction of the silver wire, specifically, in an air flow of nitrogen or inert gas having an oxygen concentration of 100 violet or less.

６亥気流中で放電を生じさせ、上記銀ワイヤの先端部を
ボール状に形成した後、該銀ワイヤを用いてワイヤボン
ディングを行なうことを特徴とするボンディング方法で
、これによれば、銀ワイヤによる信頼性のある結線が高
速で行なえるものである。6. A bonding method characterized in that a discharge is generated in an air current to form the tip of the silver wire into a ball shape, and then wire bonding is performed using the silver wire. This allows reliable connection to be made at high speed.

しかしながら、金ワイヤと同じボンディング条件の下で
銀ワイヤをネイルヘッドボンディング法によりボンディ
ングしてみると、ボールとアルミニ１クムパッド接合部
の接合強度を比較した場合。However, when bonding silver wire using the nail head bonding method under the same bonding conditions as gold wire, the bonding strength between the ball and the aluminum 1km pad was compared.

第１表に示すように銀ワイヤボンディング品の方が接合
強度が小さい。As shown in Table 1, silver wire bonded products have lower bonding strength.

第　１　表 なお、接合強度の測定は第１図のようにシリコン４のパ
ッジベージ目ン３上のアルミニウムパッド２に接続した
ボール１をストレインゲージに取りつけた棒５で押し、
ボールがはがれた時の値を読４とるという方法をとった
。測定値は、　　ｉｏｏ個の測定値の平均である。Table 1 Note that the bond strength was measured by pushing the ball 1 connected to the aluminum pad 2 on the silicone 4 pad page 3 with a rod 5 attached to a strain gauge, as shown in Figure 1.
I took the method of reading the value when the ball peeled off and taking it as 4. The measurement value is the average of ioo measurements.

銀ワイヤボンディング品のボールとアルミニウムパッド
接合部の接合強度を大きくすることは。Increasing the bonding strength between the ball and aluminum pad of a silver wire bonded product.

半導体装置の信頼性を上げるために必要であり。It is necessary to increase the reliability of semiconductor devices.

超音波ネイルヘッドボンディングを行なった。ところ力
ξ銀ボールとアルミニウムパッド接合部の接合強度は大
きくなるものの、シリコンチップ内に微小なりラックが
入り、半導体素子の機能が破壊されるという問題のある
ことがわかった。Ultrasonic nail head bonding was performed. However, although the bonding strength between the silver ball and the aluminum pad is increased, it has been found that there is a problem in that a very small rack may enter the silicon chip, destroying the functionality of the semiconductor element.

（発明の目的） 本発明の目的は、銀ボールとアルミニウムパッド接合部
の接合強度の太きい、低価格で信頼性の高い半導体装置
の製造方法を提供することにある。(Objective of the Invention) An object of the present invention is to provide a low-cost, highly reliable method for manufacturing a semiconductor device that has a high bonding strength between a silver ball and an aluminum pad.

（発明の構成） 本発明は、銀ワイヤを用いたネイルヘッドボンディング
工程を有する半導体装置の製造方法（こおいて、ｅボー
ルの熱圧着時に振動を銀ボールに与えることを特徴とす
る半導体装置の製造方法である。(Structure of the Invention) The present invention provides a method for manufacturing a semiconductor device having a nail head bonding process using a silver wire (herein, a method for manufacturing a semiconductor device, characterized in that vibration is applied to the silver ball during thermocompression bonding of the e-ball). This is the manufacturing method.

（本発明の作用・原理） 超音波ネイルヘッドボンディングにより銀ワイヤをボン
ディングした場合に見られるシリコンチツブ内のクラッ
クは、塑性変形能において金より若干おとる銀が、約６
０ＫＨ２という高い周波数で、アルミニウムパッドをこ
すりつけるために、第２図に示すように銀ボール直下か
らアルミニウムがすべて排除され、銀ボールが直接シリ
コンチップに振動を与えることによって生起することが
わかった。これは、銀ボールの熱圧着時に印加する超音
波振動の振幅を小さくしても変わらない。したがって塑
性変形能において笠より劣る銀の場合には、銀ボールに
与える振動の周波数を小さ′＜シ、銀ボールが直接シリ
コンチップに振動を与えることを防がなければならない
。以下実施例を用いて本発明６ごついて具体的に述べる
。(Operation/principle of the present invention) Cracks in the silicon chip that are observed when silver wire is bonded by ultrasonic nail head bonding are caused by the fact that silver, which has a slightly lower plastic deformability than gold, has a plastic deformability of about 6
In order to rub the aluminum pad at a high frequency of 0KH2, all the aluminum was removed from directly under the silver ball as shown in Figure 2, and it was found that this was caused by the silver ball directly applying vibration to the silicon chip. This does not change even if the amplitude of the ultrasonic vibrations applied during thermocompression bonding of the silver balls is reduced. Therefore, in the case of silver, which is inferior to Kasa in plastic deformability, the frequency of vibration applied to the silver ball must be lowered to prevent the silver ball from directly applying vibration to the silicon chip. The sixth aspect of the present invention will be specifically described below using Examples.

（実施例） 銀ボールの熱圧眉時に印加する振動の周波数を変えなが
ら、ボンディングを行ない、銀ボールとアルミニウムパ
ッド接合部の接合強度の測定と、したキャピラリ８を支
えるアーム９に振動子１０を取りつけ、この振動子の振
動をキャピラリを通して、熱圧着時に銀ボールに伝達す
るものである。(Example) Bonding was carried out while changing the frequency of the vibration applied during heat compression of the silver ball, and the bonding strength between the silver ball and the aluminum pad was measured, and the vibrator 10 was attached to the arm 9 supporting the capillary 8. The vibration of this vibrator is transmitted through the capillary to the silver ball during thermocompression bonding.

ボンディング時の加熱温度は３２０℃、圧着時の荷重は
９０ｇとした。接合強度の測定は、前述した第１図の方
法によった。また、シリコンチップ内のクラックの有無
は、銀ボールとアルミニウムパッド接合部の断面研摩あ
るいは硝酸および水酸化ナトリウムによるエツチングに
より観察・判定を行なった。第２表に結果を示す。The heating temperature during bonding was 320° C., and the load during pressure bonding was 90 g. The bonding strength was measured by the method shown in FIG. 1 described above. The presence or absence of cracks in the silicon chip was observed and determined by cross-sectional polishing of the junction between the silver ball and the aluminum pad or by etching with nitric acid and sodium hydroxide. Table 2 shows the results.

以上の実施例から銀ボールとアルミニラムノ接合部の接
合強度を大きくするとともに、シリコンチップ内にクラ
ックを生じない周波・数範囲は、５０Ｈｚ−１０ＪｃＨ
ｚであることがわかる。この範囲の１周波数をもつ振動
を印加した場合、銀ボールの直下にはかならずアルミニ
ウムが観察された。しかしながら２０　ＫＨｚ以上では
、第２図のように銀ボールの直下にはアルミニウムが全
く観察されなかった。From the above examples, the frequency/number range that increases the bonding strength between the silver ball and the aluminum lamino bond and does not cause cracks in the silicon chip is 50Hz-10JcH.
It turns out that it is z. When a vibration with one frequency in this range was applied, aluminum was always observed directly below the silver ball. However, at frequencies above 20 KHz, no aluminum was observed directly beneath the silver balls as shown in FIG.

（発明の効果） 以上詳述したように１本発明によれば、銀ボールとアル
ミニウムパッド接合部の接合強度を大きくすることがで
きるため、高信頼性の銀ワイヤボンディングが可能とな
り、半導体装置の低価格化に大きく貢献できるものであ
る。(Effects of the Invention) As detailed above, according to the present invention, the bonding strength between the silver ball and the aluminum pad can be increased, making it possible to perform highly reliable silver wire bonding, thereby improving the performance of semiconductor devices. This can greatly contribute to lower prices.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、ボールとアルミニウムパッド接合部の接合強
度の測定法を示す概略図、第２図は、超音波ネイルヘッ
ドボンディングにより銀ワイヤをボンディングした場合
の接合部断面の概略図、第３図は、実施例に用いたボン
ダーの概略図。 １・・・金ボールあるいは銀ボール、２・・・アルミニ
ウムパッド、３・・・二酸化シリコンのベッシベーショ
ン、４・・・シリコン、５・・接合強度測定用の棒。 ６・・・クラック、７・・・ワイヤ、８・・・キャピラ
リ、９・・・アーム、１０・・・振動子。Figure 1 is a schematic diagram showing the method for measuring the bond strength between the ball and the aluminum pad. Figure 2 is a schematic diagram of a cross section of the joint when silver wire is bonded by ultrasonic nail head bonding. Figure 3 is a schematic diagram of a bonder used in Examples. 1... Gold ball or silver ball, 2... Aluminum pad, 3... Silicon dioxide besivation, 4... Silicon, 5... Rod for measuring bonding strength. 6... Crack, 7... Wire, 8... Capillary, 9... Arm, 10... Vibrator.

Claims (1)

【特許請求の範囲】[Claims] 　銀ワイヤを用いたネイルヘッドボンディング工程を有
する半導体装置の製造方法において、銀ボールの熱圧着
時に銀ボールに周波数が５０Ｈｚ〜１０ＫＨｚの振動を
与えることを特徴とする半導体装置の製造方法。1. A method for manufacturing a semiconductor device including a nail head bonding process using a silver wire, the method comprising applying vibrations having a frequency of 50 Hz to 10 KHz to the silver balls during thermocompression bonding of the silver balls.
JP59138514A 1984-07-04 1984-07-04 Manufacture of semiconductor device Pending JPS6118139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59138514A JPS6118139A (en) 1984-07-04 1984-07-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59138514A JPS6118139A (en) 1984-07-04 1984-07-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6118139A true JPS6118139A (en) 1986-01-27

Family

ID=15223924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59138514A Pending JPS6118139A (en) 1984-07-04 1984-07-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6118139A (en)

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