JPS6130043A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6130043A
JPS6130043A JP15226384A JP15226384A JPS6130043A JP S6130043 A JPS6130043 A JP S6130043A JP 15226384 A JP15226384 A JP 15226384A JP 15226384 A JP15226384 A JP 15226384A JP S6130043 A JPS6130043 A JP S6130043A
Authority
JP
Japan
Prior art keywords
silver
aluminum
ball
wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15226384A
Other languages
Japanese (ja)
Inventor
Atsushi Kamijo
敦 上條
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15226384A priority Critical patent/JPS6130043A/en
Publication of JPS6130043A publication Critical patent/JPS6130043A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a low cost and highly reliable device by using Ag lead, executing the heat processing after it is connected with the Al electrode and diffusing all aluminum at the joining point of Ag ball and Al electrode. CONSTITUTION:After an Ag ball 1 and Al pad 3 are joined, these are subjected to the heat processing for 120min at 100 deg.C under Ar or for 40min at 175 deg.C in order to prevent change of composition within an alloy 2 of Ag and Al after reaction of Al at the junction point and exposure of semiconductor chip to a high temperature. According to this method, a low cost semiconductor device can be obtained while the same reliability as that of Au lead junction product is attained.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置の製造方法に関するものである・ （従来技術） トランジスタ、ＩＣなどの半導体素子上の内部電４１（
アルミニウムパッド）と外部リードとの結線は、主に金
ワイヤを用いるネイルへ、ドボンディング、あるいはア
ルミニウムワイヤを用いる超音波ボンディングにより行
なわれている。前者は、水累炎（水素トーチ）あるいは
放電（電気トーチ）により金ワイヤの先端部を溶融しボ
ールを形成（ボールアップ）した後熱圧着により結線す
る方法である。この方法は汎用性が大きく高速ボンディ
ングが可能であるという特長をもっている。一方、後者
は、アルミニウムワイヤを超音波をかけてつぶし結線す
る方法で、ネイルヘッドボンディングのように熱を加え
る必要がなく常温で結線ができ、またアルミニウムーア
ルミニウムの接合であるために信頼性が高い。しかし結
線に際しては方向性があるために高速化が困難であるこ
と、ざらにそもそもアルミニウムワイヤの引張り強度が
小さいためにワイヤ新線が多り、製造コストが高（つく
という欠点を有している。以上のようなことから、通信
用の高信頼性を必要とされるような半導体装置をのぞく
ほとんどの民生用牛導体装置の製造は金ワイヤによるネ
イルヘッドボンディングにより行なわれている。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a method for manufacturing a semiconductor device. (Prior Art) Internal electric current 41 (
The connection between the aluminum pad (aluminum pad) and the external lead is mainly done by nail bonding using gold wire or ultrasonic bonding using aluminum wire. The former is a method in which the tip of a gold wire is melted using a water flame (hydrogen torch) or electric discharge (electric torch) to form a ball (ball up), and then the wires are connected by thermocompression bonding. This method has the advantage of being highly versatile and capable of high-speed bonding. On the other hand, the latter is a method of crushing and bonding aluminum wire by applying ultrasonic waves, and unlike nail head bonding, it is not necessary to apply heat and the bond can be made at room temperature, and since it is an aluminum-aluminum bond, it is reliable. expensive. However, it is difficult to increase the speed when connecting wires because of the directionality, and the tensile strength of aluminum wire is low to begin with, so new wires are often required, resulting in high manufacturing costs. Because of the above, most consumer conductor devices, except for semiconductor devices that require high reliability for communications, are manufactured by nail head bonding using gold wire.

（従来技術の問題点） 近年、半導体素子の製造技術の進歩や半導体装置の組立
装置の自動化などにより、半導体装置の製造コストはま
すます安くなってきたのに対し、高価な金を用いるがゆ
えに半導体装置の原価に占める金ワイヤの割合は増大し
、原価を圧迫するようになった。この傾向は半導体素子
自体の付加価値の小さなトランジスタなどの個別半導体
において顕著であり、代替ワイヤの開発が要求されてい
る。(Problems with conventional technology) In recent years, the manufacturing cost of semiconductor devices has become lower and lower due to advances in semiconductor element manufacturing technology and automation of semiconductor device assembly equipment. The proportion of gold wire in the cost of semiconductor devices has increased, putting pressure on the cost. This tendency is remarkable in individual semiconductors such as transistors where the added value of the semiconductor element itself is small, and there is a demand for the development of alternative wires.

電気伝導度の大きさ、ボンディングワイヤへの伸線のし
やすさ、ボンディングワイヤとしての引張り強度、ボー
ルアップのしやすさ、あるいはボールの圧着ζこ重要と
なる塑性変形のしや丁さなどを考えると、銀ワイヤが金
ワイヤの代替となりつる。事実、本発明者らの発明によ
る特願昭５８−０９５１６５によれば銀ワイヤを半導体
素子上の内部電極と外部リードの結線に用いることがで
きる。The electrical conductivity, ease of drawing into a bonding wire, tensile strength as a bonding wire, ease of ball-up, and the degree of plastic deformation that is important for crimping the ball. If you think about it, silver wire can be used as a substitute for gold wire. In fact, according to Japanese Patent Application No. 58-095165 invented by the present inventors, silver wire can be used to connect internal electrodes on a semiconductor element and external leads.

すなわち銀ワイヤと放電電極間に放電を生じさせ該銀ワ
イヤの先端部にボールを形成した後、この銀ワイヤを用
いてボンディングを行なう方法において、上記銀ワイヤ
と放電電極を該銀ワイヤと放電電極を結ぶ方向でかつ放
電電極から銀ワイヤの向きに流れる保護雰囲気ガスの気
流中に配置し、該気流中で放電を生じさせ、上記銀ワイ
ヤの先端部をボール状に形成した後肢銀ワイヤを用いて
ワイヤボンディングを行なうことを特徴とするボンディ
ング方法で、これによれば銀ワイヤによる信頼のある結
線が高速で行なえるものである。That is, in a method in which a discharge is generated between a silver wire and a discharge electrode, a ball is formed at the tip of the silver wire, and then bonding is performed using the silver wire, the silver wire and the discharge electrode are bonded to each other. The hindlimb silver wire is placed in an airflow of protective atmosphere gas flowing in the direction of connecting the silver wires and from the discharge electrode to the silver wire, and a discharge is generated in the airflow, and the tip of the silver wire is formed into a ball shape. This is a bonding method characterized by performing wire bonding using silver wires. According to this method, reliable connection using silver wire can be performed at high speed.

しかしながらこの方法により銀ワイヤをボンディングし
、樹脂封入したのち、信頼性試験を行なってみると、プ
レッシャークツカーテスト（Ｐｒｅ−ｓｓｕｒｅ　Ｃｏ
ｏｋｅｒ　Ｔｅ５ｔ以下ＰＯＴと記Ｔ、）での累積故障
率か、第１表に示すように金ワイヤでボンディングした
場合に比較するとかなり大きいという問題が生じた。た
だしＰＯＴの試験条件は、１２５℃２．３気圧であり、
端子間抵抗が初期値より１０パーセント増大したら故障
と判定した。However, when we conducted a reliability test after bonding the silver wire and enclosing it in resin using this method, we found that the pressure
A problem arose in that the cumulative failure rate at the Oker Te5t or lower (noted as POT and T) was considerably higher than that in the case of bonding with gold wire, as shown in Table 1. However, the test conditions for POT are 125°C and 2.3 atm.
A failure was determined when the resistance between terminals increased by 10% from the initial value.

第　　　１　　　表 第１表で、１００時間で起こる故障は、主としてアルミ
ニウム配線の腐食によるものである。Table 1 In Table 1, failures that occur after 100 hours are mainly due to corrosion of the aluminum wiring.

本発明者は、銀ワイヤボンディング品のＰＣＴで起きた
故障原因について調べた結果、上記の故障は、銀ボール
とアルミニウムパッド接合部に形成される銀とアルミニ
ウムの合金の成長が不十分であることに起因することを
つきとめた。As a result of investigating the causes of failures that occurred in PCT of silver wire bonded products, the inventor found that the above failures were due to insufficient growth of the silver and aluminum alloy formed at the joint between the silver ball and the aluminum pad. It was found that this was caused by

（本発明の目的） 本発明の目的は、上記故障のない低価格で信頼性の高い
半導体装置の製造方法を提供することにある。(Object of the present invention) An object of the present invention is to provide a method for manufacturing a semiconductor device that is free from the above-mentioned failures and is inexpensive and highly reliable.

（本発明の構成） 銀ワイヤを用い銀ワイヤの先端にボールを形成しこのボ
ールを熱圧着して半導体素子上のアルミニウム電極と外
部リードの接続を行なう半導体装置の製造方法において
、銀ボールとアルミニウム電極の接合部のアルミニウム
を丁べて拡散反応させるために、ボンディング終了後、
熱処理を行なうことを特徴とＴる半導体装置の製造方法
である。(Structure of the present invention) In a method for manufacturing a semiconductor device in which a ball is formed at the tip of the silver wire using a silver wire and the ball is bonded by thermocompression to connect an aluminum electrode on a semiconductor element to an external lead, the silver ball and the aluminum After bonding, in order to bring the aluminum at the electrode joint together and cause a diffusion reaction,
This is a method for manufacturing a semiconductor device characterized by performing heat treatment.

（発明の概要） 銀ボールとアルミニウムパッド接合部に、銀とアルミニ
ウムの拡散反応によって形成される合金層の成長幅とＰ
ＯＴ故障との関連を調べるために、以下の実験を行なっ
た。下地加熱温度３５０　ｔ：：、キャピラリ温度１０
０℃、ボンディング荷重９０ｇの条件で、銀ワイヤによ
りネイルヘッドボンディングを行なった後、適当な熱処
理を行ない銀ボールとアルミニウムパッド接合部の合金
層を成長させ、これを樹脂封入し、ＰＣＴを行なった。(Summary of the invention) The growth width and P of the alloy layer formed by the diffusion reaction of silver and aluminum at the junction between the silver ball and the aluminum pad.
In order to investigate the relationship with OT failure, the following experiment was conducted. Base heating temperature 350 t::, capillary temperature 10
After performing nail head bonding with a silver wire under the conditions of 0°C and a bonding load of 90 g, an appropriate heat treatment was performed to grow an alloy layer at the joint between the silver ball and the aluminum pad, this was encapsulated in resin, and PCT was performed. .

熱処理の条件とＰＯＴ（試験時間は２５０時間とした）
での故障率の関係を第２表に示す。Heat treatment conditions and POT (test time was 250 hours)
Table 2 shows the relationship between failure rates.

第　　　２　　　表 故障解析のため、銀ボールとアルミニウムパッド接合部
の断面研摩を行ないこの部分を走査型電子顕微鏡（８Ｅ
Ｍ）により観察したところ、ＰＣＴ故障の著しい熱処理
を行なわなかったものは銀とアルミニウムの合金が腐食
しているかのように見える。一方、ＰＣＴ故障のない、
２００℃４０分の熱処理を行なったものは、アルミニウ
ムか丁べて反応しきっていたが、熱処理なしの場合のよ
うな異常は認められなかった。合金組成の変化のよう丁
とＰＣＴ故障の関係をみるために、Ｘ線マイクロアナラ
イザー（ＸＭＡ）！こより銀（Ａｇ）およびアルミニウ
ム（Ａ／）の分布を調べた。第１図は圧着された銀ボー
ルｌとアルミニウムパッド２接ベージ、ン、４はシリコ
ンである。第１図のＡＡ’で示される線に沿って線分析
を行なった。第２図。Table 2 For failure analysis, the cross section of the silver ball and aluminum pad joint was polished and this part was examined using a scanning electron microscope (8E
When observed by M), it appears as if the silver-aluminum alloy was corroded in those that were not subjected to the heat treatment that caused significant PCT failure. On the other hand, without PCT failure,
In the case of heat treatment at 200°C for 40 minutes, all of the aluminum had completely reacted, but no abnormality was observed as in the case without heat treatment. To see the relationship between changes in alloy composition and PCT failure, we used an X-ray microanalyzer (XMA)! From this, the distribution of silver (Ag) and aluminum (A/) was investigated. FIG. 1 shows a press-bonded silver ball l and an aluminum pad 2 contacting a base plate, n, and 4 made of silicon. Line analysis was performed along the line indicated by AA' in FIG. Figure 2.

第３図，第４図はそれぞれ熱処理をしなかったもの、２
００℃−５分の熱処理を行なったもの、２００℃−４０
分の熱処理を行なったものの銀（Ａｇ）およびアルミニ
ウム（Ａ／）の線分析図である。縦軸は銀あるいはアル
ミニウムの濃度に対応している。Figures 3 and 4 are those without heat treatment and 2, respectively.
00℃-5 minutes heat treatment, 200℃-40
FIG. 2 is a line analysis diagram of silver (Ag) and aluminum (A/) after heat treatment for 30 minutes. The vertical axis corresponds to the concentration of silver or aluminum.

これらの線分析の結果と第１表の故障率の結果およびＳ
ＥＭＩこよる観察結果をあわせて考えてみると、アルミ
ニウムが未反応で残り、銀とアルミニウムの合金内の組
成変化の大きい場合にＰＯＴ故障が起き、アルミニウム
が反応しきって、銀とアルミニウムの合金層内の組成変
化がない場合にはＰＣＴは故障は生じないということに
なる。以下実施例を用いて本発明について具体的に説明
する。These line analysis results and the failure rate results in Table 1 and S
Considering the observation results caused by EMI, a POT failure occurs when aluminum remains unreacted and there is a large compositional change in the silver-aluminum alloy, and the aluminum has completely reacted and the silver-aluminum alloy layer If there is no change in the composition within the PCT, no failure will occur. The present invention will be specifically described below using Examples.

（実施例） 上述の実験をふまえ、ボンディング終了後に熱処理を行
ない、銀ボールとアルミニウムパッドの接合部で、拡散
反応によってアルミニウムが反応しきって銀とアルミニ
ウムの合金層内の組成変化がないようにするための条件
を調べた。ンリコンチ，プは高温下にさらすことはでき
ないので、低温で長時間熱処理をする必要がある。(Example) Based on the above experiment, heat treatment is performed after bonding is completed to prevent aluminum from reacting completely due to diffusion reaction at the joint between the silver ball and aluminum pad, so that there is no compositional change in the silver-aluminum alloy layer. We looked into the conditions for this. Since lily pads cannot be exposed to high temperatures, they must be heat-treated at low temperatures for a long time.

第３表に本発明の実施例による、熱処理の条件と合金層
の成長の様子および樹脂封入後にＰ’０Ｔ２５０時間行
なった場合の故障率の関係を示す。なお、熱処理中の銀
ボールの酸化を防止するために、熱処理は、不活性ガス
雰囲気、具体的には、アルゴンガス中で行なった。Table 3 shows the relationship between the heat treatment conditions, the state of growth of the alloy layer, and the failure rate when P'0T was performed for 250 hours after resin encapsulation, according to the examples of the present invention. Note that, in order to prevent oxidation of the silver balls during the heat treatment, the heat treatment was performed in an inert gas atmosphere, specifically, in an argon gas atmosphere.

第３表 第３表より、銀ボールとアルミニウムパッドの接合部に
おいて、アルミニウムが反応しきって銀とアルミニウム
の合金層内の組成変化がないようにするためには、少な
くとも１００℃なら１２０分以上、１７５℃なら４０分
以上の熱処理を行なえばよく、この熱処理によってＰＣ
Ｔでの故障をなくすことができる。Table 3 From Table 3, in order to prevent the aluminum from reacting completely at the joint between the silver ball and the aluminum pad and causing no change in the composition of the silver-aluminum alloy layer, at least 120 minutes at 100°C is required. At 175℃, heat treatment for 40 minutes or more is sufficient.
Failures at T can be eliminated.

（発明の効果） 以上詳述したとおり、本発明によれば、従来の金ワイヤ
ボンディング品と同等の信頼性を有しながら、かつ低価
格の牛導体装置の製造が可能となるものである。(Effects of the Invention) As described in detail above, according to the present invention, it is possible to manufacture a low-cost conductor device that has reliability equivalent to that of conventional gold wire bonded products.

【図面の簡単な説明】 第１図は、銀ボールとアルミニウムパッド接合部の断面
の概略図。第２図から第４図までは銀ボールとアルミニ
ウムパッド接合部のＸＭＡによる線分析図。１・・・・
・・熱圧着されたボール、２・・・・・・アルミニウム
パッド、３・・・・・・二酸化シリコンのバッ・Ａ 亭　Ｚ　旧 ギ　４　　図[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a schematic cross-sectional view of the junction between a silver ball and an aluminum pad. Figures 2 to 4 are XMA line analysis diagrams of the junction between the silver ball and the aluminum pad. 1...
・・Ball bonded by thermocompression, 2・・・・・Aluminum pad, 3・・・・Silicon dioxide bag・A Tei Z Old Gi 4 Figure

Claims (1)

【特許請求の範囲】[Claims] 　銀ワイヤを用い、銀ワイヤの先端にボールを形成し、
このボールを熱圧着して半導体素子上のアルミウム電極
と外部リードの接続を行なう半導体装置の製造方法にお
いて、ボンディング終了後熱処理を行ない、銀ボールと
アルミニウム電極の接合部のアルミニウムをすべて拡散
反応させ、銀とアルミニウムの合金属内の組成変化をな
くすことを特徴とする半導体装置の製造方法。Using a silver wire, form a ball at the tip of the silver wire,
In a method of manufacturing a semiconductor device in which the aluminum electrode on the semiconductor element and the external lead are connected by thermocompression bonding the ball, heat treatment is performed after the bonding is completed, and all the aluminum at the joint between the silver ball and the aluminum electrode is caused to undergo a diffusion reaction. A method for manufacturing a semiconductor device characterized by eliminating compositional changes in an alloy of silver and aluminum.
JP15226384A 1984-07-23 1984-07-23 Manufacture of semiconductor device Pending JPS6130043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15226384A JPS6130043A (en) 1984-07-23 1984-07-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15226384A JPS6130043A (en) 1984-07-23 1984-07-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6130043A true JPS6130043A (en) 1986-02-12

Family

ID=15536662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15226384A Pending JPS6130043A (en) 1984-07-23 1984-07-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6130043A (en)

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